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2018IXYSCORPORATION,AllRightsReservedDS100683E(6/18)IXFP34N65X2IXFH34N65X2VDSS=650VID25=34ARDS(on)100mFeaturesInternationalStandardPackagesLowRDS(ON)andQGAvalancheRatedLowPackageInductanceAdvantagesHighPowerDensityEasytoMountSpaceSavingsApplicationsSwitch-ModeandResonant-ModePowerSuppliesDC-DCConvertersPFCCircuitsACandDCMotorDrivesRoboticsandServoControlsSymbolTestConditionsCharacteristicValues(TJ=25C,UnlessOtherwiseSpecified)Min.
Typ.
Max.
BVDSSVGS=0V,ID=1mA650VVGS(th)VDS=VGS,ID=2.
5mA3.
55.
0VIGSSVGS=30V,VDS=0V100nAIDSSVDS=VDSS,VGS=0V10ATJ=125C1.
75mARDS(on)VGS=10V,ID=0.
5ID25,Note1100mSymbolTestConditionsMaximumRatingsVDSSTJ=25Cto150C650VVDGRTJ=25Cto150C,RGS=1M650VVGSSContinuous30VVGSMTransient40VID25TC=25C34AIDMTC=25C,PulseWidthLimitedbyTJM68AIATC=25C10AEASTC=25C1Jdv/dtISIDM,VDDVDSS,TJ150°C50V/nsPDTC=25C540WTJ-55.
.
.
+150CTJM150CTstg-55.
.
.
+150CTLMaximumLeadTemperatureforSoldering300°CTSOLD1.
6mm(0.
062in.
)fromCasefor10s260°CMdMountingTorque1.
13/10Nm/lb.
inWeightTO-2203gTO-2476gN-ChannelEnhancementModeAvalancheRatedX2-ClassHiPerFETTMPowerMOSFETG=GateD=DrainS=SourceTab=DrainTO-247(IXFH)GSD(Tab)DTO-220(IXFP)D(Tab)SGDIXYSReservestheRighttoChangeLimits,TestConditions,andDimensions.
IXFP34N65X2IXFH34N65X2Note1.
Pulsetest,t300s,dutycycle,d2%.
IXYSMOSFETsandIGBTsarecovered4,835,5924,931,8445,049,9615,237,4816,162,6656,404,065B16,683,3446,727,5857,005,734B27,157,338B2byoneormoreofthefollowingU.
S.
patents:4,860,0725,017,5085,063,3075,381,0256,259,123B16,534,3436,710,405B26,759,6927,063,975B24,881,1065,034,7965,187,1175,486,7156,306,728B16,583,5056,710,4636,771,478B27,071,537Source-DrainDiodeSymbolTestConditionsCharacteristicValues(TJ=25C,UnlessOtherwiseSpecified)Min.
Typ.
MaxISVGS=0V34AISMRepetitive,pulseWidthLimitedbyTJM136AVSDIF=IS,VGS=0V,Note11.
4Vtrr164nsQRM1.
2μCIRM14.
4AIF=17A,-di/dt=100A/μsVR=100VSymbolTestConditionsCharacteristicValues(TJ=25C,UnlessOtherwiseSpecified)Min.
Typ.
MaxgfsVDS=10V,ID=0.
5ID25,Note11220SRGiGateInputResistance0.
8Ciss3230pFCossVGS=0V,VDS=25V,f=1MHz2000pFCrss2pFCo(er)130pFCo(tr)486pFtd(on)37nstr60nstd(off)64nstf30nsQg(on)56nCQgsVGS=10V,VDS=0.
5VDSS,ID=0.
5ID2519nCQgd18nCRthJC0.
23C/WRthCSTO-2200.
50C/WTO-2470.
25C/WResistiveSwitchingTimesVGS=10V,VDS=0.
5VDSS,ID=0.
5ID25RG=10(External)EffectiveOutputCapacitanceEnergyrelatedTimerelatedVGS=0VVDS=0.
8VDSS2018IXYSCORPORATION,AllRightsReservedIXFP34N65X2IXFH34N65X2Fig.
1.
OutputCharacteristics@TJ=25oC0510152025303500.
511.
522.
533.
5VDS-VoltsID-AmperesVGS=10V9V8V6V7V5VFig.
3.
OutputCharacteristics@TJ=125oC051015202530350123456789VDS-VoltsID-AmperesVGS=10V9V7V5V6V4V8VFig.
4.
RDS(on)NormalizedtoID=17AValuevs.
JunctionTemperature0.
20.
61.
01.
41.
82.
22.
63.
03.
43.
8-50-250255075100125150TJ-DegreesCentigradeRDS(on)-NormalizedVGS=10VID=17AID=34AFig.
5.
RDS(on)NormalizedtoID=17AValuevs.
DrainCurrent0.
61.
01.
41.
82.
22.
63.
03.
43.
84.
24.
601020304050607080ID-AmperesRDS(on)-NormalizedVGS=10VTJ=125oCTJ=25oCFig.
2.
ExtendedOutputCharacteristics@TJ=25oC01020304050607080051015202530VDS-VoltsID-AmperesVGS=10V7V6V5V8V9VFig.
6.
NormalizedBreakdown&ThresholdVoltagesvs.
JunctionTemperature0.
60.
70.
80.
91.
01.
11.
21.
3-60-40-20020406080100120140160TJ-DegreesCentigradeBVDSS/VGS(th)-NormalizedBVDSSVGS(th)IXYSReservestheRighttoChangeLimits,TestConditions,andDimensions.
IXFP34N65X2IXFH34N65X2Fig.
8.
InputAdmittance05101520253035403.
54.
04.
55.
05.
56.
06.
57.
07.
58.
0VGS-VoltsID-AmperesTJ=125oC25oC-40oCFig.
7.
MaximumDrainCurrentvs.
CaseTemperature0510152025303540-50-250255075100125150TC-DegreesCentigradeID-AmperesFig.
9.
Transconductance05101520253035051015202530354045ID-Amperesgfs-SiemensTJ=-40oC125oC25oCFig.
10.
ForwardVoltageDropofIntrinsicDiode0204060801001200.
30.
40.
50.
60.
70.
80.
91.
01.
11.
21.
3VSD-VoltsIS-AmperesTJ=125oCTJ=25oCFig.
11.
GateCharge0246810051015202530354045505560QG-NanoCoulombsVGS-VoltsVDS=325VID=17AIG=10mAFig.
12.
Capacitance1101001,00010,000100,0001101001000VDS-VoltsCapacitance-PicoFaradsf=1MHzCissCrssCoss2018IXYSCORPORATION,AllRightsReservedIXFP34N65X2IXFH34N65X2IXYSREF:F_34N65X2(X5-S602)12-14-15Fig.
15.
MaximumTransientThermalImpedance0.
0010.
010.
110.
000010.
00010.
0010.
010.
1110PulseWidth-SecondsZ(th)JC-K/WFig.
14.
Forward-BiasSafeOperatingArea0.
1110100101001,000VDS-VoltsID-AmperesTJ=150oCTC=25oCSinglePulse25μs100μsRDS(on)Limit1msFig.
13.
OutputCapacitanceStoredEnergy0510152025300100200300400500600VDS-VoltsEOSS-MicroJoulesIXYSReservestheRighttoChangeLimits,TestConditions,andDimensions.
IXFP34N65X2IXFH34N65X2TO-220OutlineTO-247Outline1-Gate2,4-Drain3-Source1-Gate2,4-Drain3-SourceDisclaimerNotice-Informationfurnishedisbelievedtobeaccurateandreliable.
However,usersshouldindependentlyevaluatethesuitabilityofandtesteachproductselectedfortheirownapplications.
Littelfuseproductsarenotdesignedfor,andmaynotbeusedin,allapplications.
ReadcompleteDisclaimerNoticeatwww.
littelfuse.
com/disclaimer-electronics.
Typ.
Max.
BVDSSVGS=0V,ID=1mA650VVGS(th)VDS=VGS,ID=2.
5mA3.
55.
0VIGSSVGS=30V,VDS=0V100nAIDSSVDS=VDSS,VGS=0V10ATJ=125C1.
75mARDS(on)VGS=10V,ID=0.
5ID25,Note1100mSymbolTestConditionsMaximumRatingsVDSSTJ=25Cto150C650VVDGRTJ=25Cto150C,RGS=1M650VVGSSContinuous30VVGSMTransient40VID25TC=25C34AIDMTC=25C,PulseWidthLimitedbyTJM68AIATC=25C10AEASTC=25C1Jdv/dtISIDM,VDDVDSS,TJ150°C50V/nsPDTC=25C540WTJ-55.
.
.
+150CTJM150CTstg-55.
.
.
+150CTLMaximumLeadTemperatureforSoldering300°CTSOLD1.
6mm(0.
062in.
)fromCasefor10s260°CMdMountingTorque1.
13/10Nm/lb.
inWeightTO-2203gTO-2476gN-ChannelEnhancementModeAvalancheRatedX2-ClassHiPerFETTMPowerMOSFETG=GateD=DrainS=SourceTab=DrainTO-247(IXFH)GSD(Tab)DTO-220(IXFP)D(Tab)SGDIXYSReservestheRighttoChangeLimits,TestConditions,andDimensions.
IXFP34N65X2IXFH34N65X2Note1.
Pulsetest,t300s,dutycycle,d2%.
IXYSMOSFETsandIGBTsarecovered4,835,5924,931,8445,049,9615,237,4816,162,6656,404,065B16,683,3446,727,5857,005,734B27,157,338B2byoneormoreofthefollowingU.
S.
patents:4,860,0725,017,5085,063,3075,381,0256,259,123B16,534,3436,710,405B26,759,6927,063,975B24,881,1065,034,7965,187,1175,486,7156,306,728B16,583,5056,710,4636,771,478B27,071,537Source-DrainDiodeSymbolTestConditionsCharacteristicValues(TJ=25C,UnlessOtherwiseSpecified)Min.
Typ.
MaxISVGS=0V34AISMRepetitive,pulseWidthLimitedbyTJM136AVSDIF=IS,VGS=0V,Note11.
4Vtrr164nsQRM1.
2μCIRM14.
4AIF=17A,-di/dt=100A/μsVR=100VSymbolTestConditionsCharacteristicValues(TJ=25C,UnlessOtherwiseSpecified)Min.
Typ.
MaxgfsVDS=10V,ID=0.
5ID25,Note11220SRGiGateInputResistance0.
8Ciss3230pFCossVGS=0V,VDS=25V,f=1MHz2000pFCrss2pFCo(er)130pFCo(tr)486pFtd(on)37nstr60nstd(off)64nstf30nsQg(on)56nCQgsVGS=10V,VDS=0.
5VDSS,ID=0.
5ID2519nCQgd18nCRthJC0.
23C/WRthCSTO-2200.
50C/WTO-2470.
25C/WResistiveSwitchingTimesVGS=10V,VDS=0.
5VDSS,ID=0.
5ID25RG=10(External)EffectiveOutputCapacitanceEnergyrelatedTimerelatedVGS=0VVDS=0.
8VDSS2018IXYSCORPORATION,AllRightsReservedIXFP34N65X2IXFH34N65X2Fig.
1.
OutputCharacteristics@TJ=25oC0510152025303500.
511.
522.
533.
5VDS-VoltsID-AmperesVGS=10V9V8V6V7V5VFig.
3.
OutputCharacteristics@TJ=125oC051015202530350123456789VDS-VoltsID-AmperesVGS=10V9V7V5V6V4V8VFig.
4.
RDS(on)NormalizedtoID=17AValuevs.
JunctionTemperature0.
20.
61.
01.
41.
82.
22.
63.
03.
43.
8-50-250255075100125150TJ-DegreesCentigradeRDS(on)-NormalizedVGS=10VID=17AID=34AFig.
5.
RDS(on)NormalizedtoID=17AValuevs.
DrainCurrent0.
61.
01.
41.
82.
22.
63.
03.
43.
84.
24.
601020304050607080ID-AmperesRDS(on)-NormalizedVGS=10VTJ=125oCTJ=25oCFig.
2.
ExtendedOutputCharacteristics@TJ=25oC01020304050607080051015202530VDS-VoltsID-AmperesVGS=10V7V6V5V8V9VFig.
6.
NormalizedBreakdown&ThresholdVoltagesvs.
JunctionTemperature0.
60.
70.
80.
91.
01.
11.
21.
3-60-40-20020406080100120140160TJ-DegreesCentigradeBVDSS/VGS(th)-NormalizedBVDSSVGS(th)IXYSReservestheRighttoChangeLimits,TestConditions,andDimensions.
IXFP34N65X2IXFH34N65X2Fig.
8.
InputAdmittance05101520253035403.
54.
04.
55.
05.
56.
06.
57.
07.
58.
0VGS-VoltsID-AmperesTJ=125oC25oC-40oCFig.
7.
MaximumDrainCurrentvs.
CaseTemperature0510152025303540-50-250255075100125150TC-DegreesCentigradeID-AmperesFig.
9.
Transconductance05101520253035051015202530354045ID-Amperesgfs-SiemensTJ=-40oC125oC25oCFig.
10.
ForwardVoltageDropofIntrinsicDiode0204060801001200.
30.
40.
50.
60.
70.
80.
91.
01.
11.
21.
3VSD-VoltsIS-AmperesTJ=125oCTJ=25oCFig.
11.
GateCharge0246810051015202530354045505560QG-NanoCoulombsVGS-VoltsVDS=325VID=17AIG=10mAFig.
12.
Capacitance1101001,00010,000100,0001101001000VDS-VoltsCapacitance-PicoFaradsf=1MHzCissCrssCoss2018IXYSCORPORATION,AllRightsReservedIXFP34N65X2IXFH34N65X2IXYSREF:F_34N65X2(X5-S602)12-14-15Fig.
15.
MaximumTransientThermalImpedance0.
0010.
010.
110.
000010.
00010.
0010.
010.
1110PulseWidth-SecondsZ(th)JC-K/WFig.
14.
Forward-BiasSafeOperatingArea0.
1110100101001,000VDS-VoltsID-AmperesTJ=150oCTC=25oCSinglePulse25μs100μsRDS(on)Limit1msFig.
13.
OutputCapacitanceStoredEnergy0510152025300100200300400500600VDS-VoltsEOSS-MicroJoulesIXYSReservestheRighttoChangeLimits,TestConditions,andDimensions.
IXFP34N65X2IXFH34N65X2TO-220OutlineTO-247Outline1-Gate2,4-Drain3-Source1-Gate2,4-Drain3-SourceDisclaimerNotice-Informationfurnishedisbelievedtobeaccurateandreliable.
However,usersshouldindependentlyevaluatethesuitabilityofandtesteachproductselectedfortheirownapplications.
Littelfuseproductsarenotdesignedfor,andmaynotbeusedin,allapplications.
ReadcompleteDisclaimerNoticeatwww.
littelfuse.
com/disclaimer-electronics.
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