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SemiconductorComponentsIndustries,LLC,2018March,2020Rev.
21PublicationOrderNumber:FOD3125/DHighTemperature,2.
5AOutputCurrent,GateDriveOptocouplerFOD3125DescriptionTheFOD3125isa2.
5AOutputCurrentGateDriveOptocoupler,capableofdrivingmostmediumIGBTsorMOSFETsacrossextendedindustrialtemperaturerange,40°Cto125°C.
ItisideallysuitedforfastswitchingdrivingofpowerIGBTsandMOSFETsusedinmotorcontrolinverterapplications,andhighperformancepowersystem.
ItutilizesONSemiconductorpatentedcoplanarpackagingtechnology,Optoplanar,andoptimizedICdesigntoachievehighnoiseimmunity,characterizedbyhighcommonmoderejection.
Itconsistsofagalliumaluminumarsenide(AlGaAs)lightemittingdiodeopticallycoupledtoanintegratedcircuitwithahighspeeddriverforpushpullMOSFEToutputstage.
FeaturesExtendedIndustrialTemperateRange,40°Cto125°CHighNoiseImmunitycharacterizedby35kV/msminimumCommonModeRejection2.
5APeakOutputCurrentDrivingCapabilityforMost1200V/20AIGBTUseofPchannelMOSFETsatOutputStageEnablesOutputVoltageSwingclosetotheSupplyRailWideSupplyVoltageRangefrom15Vto30VFastSwitchingSpeed400nsmaximumPropagationDelay100nsmaximumPulseWidthDistortionUnderVoltageLockOut(UVLO)withHysteresisSafetyandRegulatoryApprovalsUL1577,5000VRMSfor1minuteDINEN/IEC6074755(pendingapproval)>8.
0mmClearanceandCreepageDistance(Option'T'or'TS')1,414VPeakWorkingInsulationVoltage(VIORM)ThisisaPbFreeDeviceApplicationsIndustrialInverterUninterruptiblePowerSupplyInductionHeatingIsolatedIGBT/PowerMOSFETGateDriveTable1.
TRUTHTABLELEDVDD–VSS"PositiveGoing"(Turnon)VDD–VSS"NegativeGoing"(Turnoff)VOOff0Vto30V0Vto30VLowOn0Vto11V0Vto9.
7VLowOn11Vto14V9.
7Vto12.
7VTransitionOn14Vto30V12.
7Vto30VHighwww.
onsemi.
comORDERINGINFORMATIONSeedetailedorderingandshippinginformationinthepackagedimensionssectiononpage13ofthisdatasheet.
12348765NCANODECATHODENCVDDVO2VO1VSSFUNCTIONALBLOCKDIAGRAMNote:A0.
1mFbypasscapacitormustbeconnectedbetweenpins5and8.
PDIP89.
655x6.
6,2.
54PCASE646CQPDIP8GWCASE709ACPDIP86.
6x3.
81,2.
54PCASE646BW88181181PDIP8GWCASE709ADFOD3125www.
onsemi.
com2Table2.
PINDEFINITIONSPin#NameDescription1NCNotConnected2AnodeLEDAnode3CathodeLEDCathode4NCNotConnected5VSSNegativeSupplyVoltage6VO2OutputVoltage2(internallyconnectedtoVO1)7VO1OutputVoltage18VDDPositiveSupplyVoltageTable3.
SAFETYANDINSULATIONRATINGSAsperDINEN/IEC6074755(pendingapproval).
Thisoptocouplerissuitablefor"safeelectricalinsulation"onlywithinthesafetylimitdata.
Compliancewiththesafetyratingsshallbeensuredbymeansofprotectivecircuits.
SymbolParameterMin.
Typ.
Max.
UnitInstallationClassificationsperDINVDE0110/1.
89Table1ForRatedMainVoltage109WFOD3125www.
onsemi.
com3Table4.
ABSOLUTEMAXIMUMRATINGS(TA=25°Cunlessotherwisespecified.
)SymbolParameterValueUnitsTSTGStorageTemperature40to+125°CTOPROperatingTemperature40to+125°CTJJunctionTemperature40to+125°CTSOLLeadWaveSolderTemperature(refertopage12forreflowsolderprofile)260for10sec°CIF(AVG)AverageInputCurrent25mAfOperatingFrequency(1)50kHzVRReverseInputVoltage5VIO(PEAK)PeakOutputCurrent(2)3AVDD–VSSSupplyVoltage0to35VTA≥90°C0to30VO(PEAK)PeakOutputVoltage0toVDDVtR(IN),tF(IN)InputSignalRiseandFallTime500nsPDIInputPowerDissipation(3)(5)45mWPDOOutputPowerDissipation(4)(5)250mWStressesexceedingthoselistedintheMaximumRatingstablemaydamagethedevice.
Ifanyoftheselimitsareexceeded,devicefunctionalityshouldnotbeassumed,damagemayoccurandreliabilitymaybeaffected.
1.
ExponentialWaveform,IO(PEAK)≤|2.
5A|≤0.
3ms2.
Maximumpulsewidth=10ms,maximumdutycycle=1.
1%.
3.
Deratelinearlyabove87°C,freeairtemperatureatarateof0.
77mW/°C.
4.
Deratelinearlyabove100°C,freeairtemperatureatarateof5.
7mW/°C.
5.
Functionaloperationundertheseconditionsisnotimplied.
Permanentdamagemayoccurifthedeviceissubjectedtoconditionsoutsidetheseratings.
Table5.
RECOMMENDEDOPERATINGCONDITIONSSymbolParameterValueUnitsTAAmbientOperatingTemperature40to+125°CVDD–VSSPowerSupply15to30VIF(ON)InputCurrent(ON)7to16mAVF(OFF)InputVoltage(OFF)0to0.
8VFunctionaloperationabovethestresseslistedintheRecommendedOperatingRangesisnotimplied.
ExtendedexposuretostressesbeyondtheRecommendedOperatingRangeslimitsmayaffectdevicereliability.
Table6.
ISOLATIONCHARACTERISTICSApplyoverallrecommendedconditions,typicalvalueismeasuredatTA=25°CSymbolParameterConditionsMin.
Typ.
Max.
UnitsVISOInputOutputIsolationVoltageTA=25°C,R.
H.
5V2.
35.
0mAVFHLThresholdInputVoltageHightoLowIO=0mA,VO5V1112.
714VVUVLO–IF=10mA,VO5V1.
6mstUVLOOFFUVLOTurnOffDelayIF=10mA,VO15.
0V).
11.
CommonmodetransientimmunityatoutputlowisthemaximumtolerablepositivedVcm/dtontheleadingedgeofthecommonpulsesignal,Vcm,toassurethattheoutputwillremainlow(i.
e.
,VO5V3487650.
1mFIFVDD=15to30V+–Figure25.
VFHLTestCircuit12VF=0to0.
8VVO3487650.
1mFVDD=15to30V+–+–Figure26.
UVLOTestCircuit12VO=5V3487650.
1∝F15Vor30VVDDRamp+–IF=10mAFOD3125www.
onsemi.
com12Figure27.
tPHL,tPLH,tRandtFTestCircuitandWaveformsVOProbeF=10kHzDC=50%IFVOUTtPLHCg=10nFRg=10W50W123487650.
1mFVDD=15to30V+–+–trtf90%50%10%tPHLFigure28.
CMRTestCircuitandWaveforms12ABVO3487650.
1mFVDD=30VVCM=2,000VIF+–5V+–DtVCMVOSwitchatA:IF=10mASwitchatB:IF=0mAVOHVOVOL0V+–FOD3125www.
onsemi.
com13REFLOWPROFILEFigure29.
ReflowProfile245C,10–30sTime(Minute)03002502001501005000.
511.
522.
533.
544.
5Temperature(C)Timeabove183C,<160secRampup=2–10C/sec260CpeakNotes:Peakreflowtemperature:260C(packagesurfacetemperature)Timeoftemperaturehigherthan183Cfor160secondsorlessOnetimesolderingreflowisrecommendedORDERINGINFORMATIONPartNumberPackageShippingFOD3125DIP8Pin50/TubeFOD3125SSMT8Pin(LeadBend)50/TubeFOD3125SDSMT8Pin(LeadBend)1,000/Tape&ReelFOD3125VDIP8Pin,DINEN/IEC6074755option(pendingapproval)50/TubeFOD3125SVSMT8Pin(LeadBend),DINEN/IEC6074755option(pendingapproval)50/TubeFOD3125SDVSMT8Pin(LeadBend),DINEN/IEC6074755option(pendingapproval)1,000/Tape&ReelFOD3125TVDIP8Pin,0.
4"LeadSpacing,DINEN/IEC6074755option(pendingapproval)50/TubeFOD3125TSVSMT8Pin,0.
4"LeadSpacing,DINEN/IEC6074755option(pendingapproval)50/TubeFOD3125TSR2VSMT8Pin,0.
4"LeadSpacing,DINEN/IEC6074755option(pendingapproval)1,000/Tape&ReelForinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourTapeandReelPackagingSpecificationsBrochure,BRD8011/DMARKINGINFORMATIONFigure30.
DeviceMarking1264353125BVXXONYYDefinitions1Companylogo2Devicenumber3DINEN/IEC6074755Option(pendingapproval)(onlyappearsoncomponentorderedwiththisoption)4Twodigityearcode,e.
g.
,'19'5Twodigitworkweekrangingfrom'01'to'53'6AssemblypackagecodeFOD3125www.
onsemi.
com14CARRIERTAPESPECIFICATIONS(OPTIONSD)Figure31.
CarrierTapeSpecificationsd0Pt2D011WUserDirectionofFeed0KB0A0WEDFPPSymbolDescriptionDimensioninmmWTapeWidth16.
0±0.
3tTapeThickness0.
30±0.
05P0SprocketHolePitch4.
0±0.
1D0SprocketHoleDiameter1.
55±0.
05ESprocketHoleLocation1.
75±0.
10FPocketLocation7.
5±0.
1P22.
0±0.
1PPocketPitch12.
0±0.
1A0PocketDimensions10.
30±0.
20B010.
30±0.
20K04.
90±0.
20W1CoverTapeWidth13.
2±0.
2dCoverTapeThickness0.
1maxMax.
ComponentRotationorTilt10°RMin.
BendingRadius30OPTOPLANARisaregisteredtrademarkofSemiconductorComponentsIndustries,LLC(SCILLC)oritssubsidiariesintheUnitedStatesand/orothercountries.
FOD3125www.
onsemi.
com15PACKAGEDIMENSIONS(OPTIONS)PDIP8GWCASE709ACISSUEOFOD3125www.
onsemi.
com16PACKAGEDIMENSIONS(OPTIONTS)PDIP8GWCASE709ADISSUEOFOD3125www.
onsemi.
com17PACKAGEDIMENSIONS(OPTIONT)PDIP86.
6x3.
81,2.
54PCASE646BWISSUEOFOD3125www.
onsemi.
com18PACKAGEDIMENSIONSPDIP89.
655x6.
6,2.
54PCASE646CQISSUEOONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
ONSemiconductorownstherightstoanumberofpatents,trademarks,copyrights,tradesecrets,andotherintellectualproperty.
AlistingofONSemiconductor'sproduct/patentcoveragemaybeaccessedatwww.
onsemi.
com/site/pdf/PatentMarking.
pdf.
ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.
ONSemiconductormakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
BuyerisresponsibleforitsproductsandapplicationsusingONSemiconductorproducts,includingcompliancewithalllaws,regulationsandsafetyrequirementsorstandards,regardlessofanysupportorapplicationsinformationprovidedbyONSemiconductor.
"Typical"parameterswhichmaybeprovidedinONSemiconductordatasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime.
Alloperatingparameters,including"Typicals"mustbevalidatedforeachcustomerapplicationbycustomer'stechnicalexperts.
ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
ONSemiconductorproductsarenotdesigned,intended,orauthorizedforuseasacriticalcomponentinlifesupportsystemsoranyFDAClass3medicaldevicesormedicaldeviceswithasameorsimilarclassificationinaforeignjurisdictionoranydevicesintendedforimplantationinthehumanbody.
ShouldBuyerpurchaseoruseONSemiconductorproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdONSemiconductoranditsofficers,employees,subsidiaries,affiliates,anddistributorsharmlessagainstallclaims,costs,damages,andexpenses,andreasonableattorneyfeesarisingoutof,directlyorindirectly,anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorizeduse,evenifsuchclaimallegesthatONSemiconductorwasnegligentregardingthedesignormanufactureofthepart.
ONSemiconductorisanEqualOpportunity/AffirmativeActionEmployer.
Thisliteratureissubjecttoallapplicablecopyrightlawsandisnotforresaleinanymanner.
PUBLICATIONORDERINGINFORMATIONTECHNICALSUPPORTNorthAmericanTechnicalSupport:VoiceMail:18002829855TollFreeUSA/CanadaPhone:011421337902910LITERATUREFULFILLMENT:EmailRequeststo:orderlit@onsemi.
comONSemiconductorWebsite:www.
onsemi.
comEurope,MiddleEastandAfricaTechnicalSupport:Phone:00421337902910Foradditionalinformation,pleasecontactyourlocalSalesRepresentative
21PublicationOrderNumber:FOD3125/DHighTemperature,2.
5AOutputCurrent,GateDriveOptocouplerFOD3125DescriptionTheFOD3125isa2.
5AOutputCurrentGateDriveOptocoupler,capableofdrivingmostmediumIGBTsorMOSFETsacrossextendedindustrialtemperaturerange,40°Cto125°C.
ItisideallysuitedforfastswitchingdrivingofpowerIGBTsandMOSFETsusedinmotorcontrolinverterapplications,andhighperformancepowersystem.
ItutilizesONSemiconductorpatentedcoplanarpackagingtechnology,Optoplanar,andoptimizedICdesigntoachievehighnoiseimmunity,characterizedbyhighcommonmoderejection.
Itconsistsofagalliumaluminumarsenide(AlGaAs)lightemittingdiodeopticallycoupledtoanintegratedcircuitwithahighspeeddriverforpushpullMOSFEToutputstage.
FeaturesExtendedIndustrialTemperateRange,40°Cto125°CHighNoiseImmunitycharacterizedby35kV/msminimumCommonModeRejection2.
5APeakOutputCurrentDrivingCapabilityforMost1200V/20AIGBTUseofPchannelMOSFETsatOutputStageEnablesOutputVoltageSwingclosetotheSupplyRailWideSupplyVoltageRangefrom15Vto30VFastSwitchingSpeed400nsmaximumPropagationDelay100nsmaximumPulseWidthDistortionUnderVoltageLockOut(UVLO)withHysteresisSafetyandRegulatoryApprovalsUL1577,5000VRMSfor1minuteDINEN/IEC6074755(pendingapproval)>8.
0mmClearanceandCreepageDistance(Option'T'or'TS')1,414VPeakWorkingInsulationVoltage(VIORM)ThisisaPbFreeDeviceApplicationsIndustrialInverterUninterruptiblePowerSupplyInductionHeatingIsolatedIGBT/PowerMOSFETGateDriveTable1.
TRUTHTABLELEDVDD–VSS"PositiveGoing"(Turnon)VDD–VSS"NegativeGoing"(Turnoff)VOOff0Vto30V0Vto30VLowOn0Vto11V0Vto9.
7VLowOn11Vto14V9.
7Vto12.
7VTransitionOn14Vto30V12.
7Vto30VHighwww.
onsemi.
comORDERINGINFORMATIONSeedetailedorderingandshippinginformationinthepackagedimensionssectiononpage13ofthisdatasheet.
12348765NCANODECATHODENCVDDVO2VO1VSSFUNCTIONALBLOCKDIAGRAMNote:A0.
1mFbypasscapacitormustbeconnectedbetweenpins5and8.
PDIP89.
655x6.
6,2.
54PCASE646CQPDIP8GWCASE709ACPDIP86.
6x3.
81,2.
54PCASE646BW88181181PDIP8GWCASE709ADFOD3125www.
onsemi.
com2Table2.
PINDEFINITIONSPin#NameDescription1NCNotConnected2AnodeLEDAnode3CathodeLEDCathode4NCNotConnected5VSSNegativeSupplyVoltage6VO2OutputVoltage2(internallyconnectedtoVO1)7VO1OutputVoltage18VDDPositiveSupplyVoltageTable3.
SAFETYANDINSULATIONRATINGSAsperDINEN/IEC6074755(pendingapproval).
Thisoptocouplerissuitablefor"safeelectricalinsulation"onlywithinthesafetylimitdata.
Compliancewiththesafetyratingsshallbeensuredbymeansofprotectivecircuits.
SymbolParameterMin.
Typ.
Max.
UnitInstallationClassificationsperDINVDE0110/1.
89Table1ForRatedMainVoltage109WFOD3125www.
onsemi.
com3Table4.
ABSOLUTEMAXIMUMRATINGS(TA=25°Cunlessotherwisespecified.
)SymbolParameterValueUnitsTSTGStorageTemperature40to+125°CTOPROperatingTemperature40to+125°CTJJunctionTemperature40to+125°CTSOLLeadWaveSolderTemperature(refertopage12forreflowsolderprofile)260for10sec°CIF(AVG)AverageInputCurrent25mAfOperatingFrequency(1)50kHzVRReverseInputVoltage5VIO(PEAK)PeakOutputCurrent(2)3AVDD–VSSSupplyVoltage0to35VTA≥90°C0to30VO(PEAK)PeakOutputVoltage0toVDDVtR(IN),tF(IN)InputSignalRiseandFallTime500nsPDIInputPowerDissipation(3)(5)45mWPDOOutputPowerDissipation(4)(5)250mWStressesexceedingthoselistedintheMaximumRatingstablemaydamagethedevice.
Ifanyoftheselimitsareexceeded,devicefunctionalityshouldnotbeassumed,damagemayoccurandreliabilitymaybeaffected.
1.
ExponentialWaveform,IO(PEAK)≤|2.
5A|≤0.
3ms2.
Maximumpulsewidth=10ms,maximumdutycycle=1.
1%.
3.
Deratelinearlyabove87°C,freeairtemperatureatarateof0.
77mW/°C.
4.
Deratelinearlyabove100°C,freeairtemperatureatarateof5.
7mW/°C.
5.
Functionaloperationundertheseconditionsisnotimplied.
Permanentdamagemayoccurifthedeviceissubjectedtoconditionsoutsidetheseratings.
Table5.
RECOMMENDEDOPERATINGCONDITIONSSymbolParameterValueUnitsTAAmbientOperatingTemperature40to+125°CVDD–VSSPowerSupply15to30VIF(ON)InputCurrent(ON)7to16mAVF(OFF)InputVoltage(OFF)0to0.
8VFunctionaloperationabovethestresseslistedintheRecommendedOperatingRangesisnotimplied.
ExtendedexposuretostressesbeyondtheRecommendedOperatingRangeslimitsmayaffectdevicereliability.
Table6.
ISOLATIONCHARACTERISTICSApplyoverallrecommendedconditions,typicalvalueismeasuredatTA=25°CSymbolParameterConditionsMin.
Typ.
Max.
UnitsVISOInputOutputIsolationVoltageTA=25°C,R.
H.
5V2.
35.
0mAVFHLThresholdInputVoltageHightoLowIO=0mA,VO5V1112.
714VVUVLO–IF=10mA,VO5V1.
6mstUVLOOFFUVLOTurnOffDelayIF=10mA,VO15.
0V).
11.
CommonmodetransientimmunityatoutputlowisthemaximumtolerablepositivedVcm/dtontheleadingedgeofthecommonpulsesignal,Vcm,toassurethattheoutputwillremainlow(i.
e.
,VO5V3487650.
1mFIFVDD=15to30V+–Figure25.
VFHLTestCircuit12VF=0to0.
8VVO3487650.
1mFVDD=15to30V+–+–Figure26.
UVLOTestCircuit12VO=5V3487650.
1∝F15Vor30VVDDRamp+–IF=10mAFOD3125www.
onsemi.
com12Figure27.
tPHL,tPLH,tRandtFTestCircuitandWaveformsVOProbeF=10kHzDC=50%IFVOUTtPLHCg=10nFRg=10W50W123487650.
1mFVDD=15to30V+–+–trtf90%50%10%tPHLFigure28.
CMRTestCircuitandWaveforms12ABVO3487650.
1mFVDD=30VVCM=2,000VIF+–5V+–DtVCMVOSwitchatA:IF=10mASwitchatB:IF=0mAVOHVOVOL0V+–FOD3125www.
onsemi.
com13REFLOWPROFILEFigure29.
ReflowProfile245C,10–30sTime(Minute)03002502001501005000.
511.
522.
533.
544.
5Temperature(C)Timeabove183C,<160secRampup=2–10C/sec260CpeakNotes:Peakreflowtemperature:260C(packagesurfacetemperature)Timeoftemperaturehigherthan183Cfor160secondsorlessOnetimesolderingreflowisrecommendedORDERINGINFORMATIONPartNumberPackageShippingFOD3125DIP8Pin50/TubeFOD3125SSMT8Pin(LeadBend)50/TubeFOD3125SDSMT8Pin(LeadBend)1,000/Tape&ReelFOD3125VDIP8Pin,DINEN/IEC6074755option(pendingapproval)50/TubeFOD3125SVSMT8Pin(LeadBend),DINEN/IEC6074755option(pendingapproval)50/TubeFOD3125SDVSMT8Pin(LeadBend),DINEN/IEC6074755option(pendingapproval)1,000/Tape&ReelFOD3125TVDIP8Pin,0.
4"LeadSpacing,DINEN/IEC6074755option(pendingapproval)50/TubeFOD3125TSVSMT8Pin,0.
4"LeadSpacing,DINEN/IEC6074755option(pendingapproval)50/TubeFOD3125TSR2VSMT8Pin,0.
4"LeadSpacing,DINEN/IEC6074755option(pendingapproval)1,000/Tape&ReelForinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourTapeandReelPackagingSpecificationsBrochure,BRD8011/DMARKINGINFORMATIONFigure30.
DeviceMarking1264353125BVXXONYYDefinitions1Companylogo2Devicenumber3DINEN/IEC6074755Option(pendingapproval)(onlyappearsoncomponentorderedwiththisoption)4Twodigityearcode,e.
g.
,'19'5Twodigitworkweekrangingfrom'01'to'53'6AssemblypackagecodeFOD3125www.
onsemi.
com14CARRIERTAPESPECIFICATIONS(OPTIONSD)Figure31.
CarrierTapeSpecificationsd0Pt2D011WUserDirectionofFeed0KB0A0WEDFPPSymbolDescriptionDimensioninmmWTapeWidth16.
0±0.
3tTapeThickness0.
30±0.
05P0SprocketHolePitch4.
0±0.
1D0SprocketHoleDiameter1.
55±0.
05ESprocketHoleLocation1.
75±0.
10FPocketLocation7.
5±0.
1P22.
0±0.
1PPocketPitch12.
0±0.
1A0PocketDimensions10.
30±0.
20B010.
30±0.
20K04.
90±0.
20W1CoverTapeWidth13.
2±0.
2dCoverTapeThickness0.
1maxMax.
ComponentRotationorTilt10°RMin.
BendingRadius30OPTOPLANARisaregisteredtrademarkofSemiconductorComponentsIndustries,LLC(SCILLC)oritssubsidiariesintheUnitedStatesand/orothercountries.
FOD3125www.
onsemi.
com15PACKAGEDIMENSIONS(OPTIONS)PDIP8GWCASE709ACISSUEOFOD3125www.
onsemi.
com16PACKAGEDIMENSIONS(OPTIONTS)PDIP8GWCASE709ADISSUEOFOD3125www.
onsemi.
com17PACKAGEDIMENSIONS(OPTIONT)PDIP86.
6x3.
81,2.
54PCASE646BWISSUEOFOD3125www.
onsemi.
com18PACKAGEDIMENSIONSPDIP89.
655x6.
6,2.
54PCASE646CQISSUEOONSemiconductorandaretrademarksofSemiconductorComponentsIndustries,LLCdbaONSemiconductororitssubsidiariesintheUnitedStatesand/orothercountries.
ONSemiconductorownstherightstoanumberofpatents,trademarks,copyrights,tradesecrets,andotherintellectualproperty.
AlistingofONSemiconductor'sproduct/patentcoveragemaybeaccessedatwww.
onsemi.
com/site/pdf/PatentMarking.
pdf.
ONSemiconductorreservestherighttomakechangeswithoutfurthernoticetoanyproductsherein.
ONSemiconductormakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesONSemiconductorassumeanyliabilityarisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages.
BuyerisresponsibleforitsproductsandapplicationsusingONSemiconductorproducts,includingcompliancewithalllaws,regulationsandsafetyrequirementsorstandards,regardlessofanysupportorapplicationsinformationprovidedbyONSemiconductor.
"Typical"parameterswhichmaybeprovidedinONSemiconductordatasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime.
Alloperatingparameters,including"Typicals"mustbevalidatedforeachcustomerapplicationbycustomer'stechnicalexperts.
ONSemiconductordoesnotconveyanylicenseunderitspatentrightsnortherightsofothers.
ONSemiconductorproductsarenotdesigned,intended,orauthorizedforuseasacriticalcomponentinlifesupportsystemsoranyFDAClass3medicaldevicesormedicaldeviceswithasameorsimilarclassificationinaforeignjurisdictionoranydevicesintendedforimplantationinthehumanbody.
ShouldBuyerpurchaseoruseONSemiconductorproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdONSemiconductoranditsofficers,employees,subsidiaries,affiliates,anddistributorsharmlessagainstallclaims,costs,damages,andexpenses,andreasonableattorneyfeesarisingoutof,directlyorindirectly,anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorizeduse,evenifsuchclaimallegesthatONSemiconductorwasnegligentregardingthedesignormanufactureofthepart.
ONSemiconductorisanEqualOpportunity/AffirmativeActionEmployer.
Thisliteratureissubjecttoallapplicablecopyrightlawsandisnotforresaleinanymanner.
PUBLICATIONORDERINGINFORMATIONTECHNICALSUPPORTNorthAmericanTechnicalSupport:VoiceMail:18002829855TollFreeUSA/CanadaPhone:011421337902910LITERATUREFULFILLMENT:EmailRequeststo:orderlit@onsemi.
comONSemiconductorWebsite:www.
onsemi.
comEurope,MiddleEastandAfricaTechnicalSupport:Phone:00421337902910Foradditionalinformation,pleasecontactyourlocalSalesRepresentative
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