栅极www

CSD17552Q5Awww.
ti.
com.
cnZHCSAH0–NOVEMBER201230V,,N通通道道NextFET功功率率金金属属氧氧化化物物半半导导体体场场效效应应晶晶体体管管(MOSFET)查查询询样样品品:CSD17552Q5A1特特性性产产品品概概述述超超低低栅栅极极电电荷荷(Qg)和和栅栅漏漏电电荷荷(Qgd)VDS漏源电压30V低低热热阻阻Qg栅极电荷总量(4.
5V)9.
0nC雪雪崩崩级级Qgd栅漏栅极电荷2.
0nCVGS=4.
5V6.
1mΩ无无铅铅端端子子镀镀层层RDS(接漏源导通电阻通)VGS=10V5.
1mΩ符符合合RoHS标标准准VGS(th)阀值电压1.
5V无无卤卤素素小小外外形形尺尺寸寸无无引引线线(SON)5mm*6mm塑塑料料封封装装订订购购信信息息器器件件封封装装介介质质数数量量出出货货应应用用范范围围5mmx6mmSON塑13英寸CSD17552Q5A2500卷带封装料封装卷带网网络络互互联联、、电电信信和和计计算算系系统统中中的的负负载载点点同同步步降降压压为为控控制制场场效效应应晶晶体体管管(FET)应应用用进进行行了了优优化化绝绝对对最最大大额额定定值值TA=25°C时测得,除非另外注明值值单单位位说说明明VDS漏源电压30VNexFET功率MOSFET被设计用于大大减少功率转VGS栅源电压±20V换应用中的功率损失.
持续漏极电流,TC=25°C60AID持续漏极电流,受芯片限制88A图图1.
顶顶视视图图持续漏极电流,TA=25°C时测得(1)17AIDM脉冲漏极电流,TA=25°C时测得(2)106APD功率耗散(1)3.
0WTJ,运行结温和储存温度范围-55至150°CTSTG雪崩能量,单一脉冲EAS45mJID=30A,L=0.
1mH,RG=25Ω(1)RθJA=40°C/W,这是在一个厚度为0.
06英寸(1.
52mm)的FR4印刷电路板(PCB)上的1英寸2(6.
45cm2),2盎司(厚度0.
071mm)的铜过渡垫片上测得的典型值.
(2)脉冲持续时间≤300μs,占空比≤2%RDS((接接通通))与与VGS间间的的关关系系栅栅极极电电荷荷1Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
Copyright2012,TexasInstrumentsIncorporatedProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.
ProductionprocessingdoesnotEnglishDataSheet:SLPS428necessarilyincludetestingofallparameters.
CSD17552Q5AZHCSAH0–NOVEMBER2012www.
ti.
com.
cnThesedeviceshavelimitedbuilt-inESDprotection.
TheleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoamduringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.
ELECTRICALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERTESTCONDITIONSMINTYPMAXUNITStaticCharacteristicsBVDSSDraintoSourceVoltageVGS=0V,ID=250μA30VIDSSDraintoSourceLeakageCurrentVGS=0V,VDS=24V1μAIGSSGatetoSourceLeakageCurrentVDS=0V,VGS=20V100nAVGS(th)GatetoSourceThresholdVoltageVDS=VGS,ID=250μA1.
11.
51.
9VVGS=4.
5V,ID=15A6.
17.
5mRDS(on)DraintoSourceOnResistanceVGS=10V,ID=15A5.
16.
2mgfsTransconductanceVDS=15V,ID=15A77SDynamicCharacteristicsCissInputCapacitance15802050pFCossOutputCapacitanceVGS=0V,VDS=15V,f=1MHz385500pFCrssReverseTransferCapacitance2836pFRGSeriesGateResistance0.
91.
8QgGateChargeTotal(4.
5V)9.
012nCQgdGateChargeGatetoDrain2.
0nCVDS=15V,ID=15AQgsGateChargeGatetoSource3.
6nCQg(th)GateChargeatVth2.
1nCQossOutputChargeVDS=15V,VGS=0V11nCtd(on)TurnOnDelayTime7.
6nstrRiseTime11.
4nsVDS=15V,VGS=4.
5V,IDS=15A,RG=2td(off)TurnOffDelayTime12.
2nstfFallTime3.
6nsDiodeCharacteristicsVSDDiodeForwardVoltageISD=11A,VGS=0V0.
81VQrrReverseRecoveryCharge20nCVDS=13V,IF=15A,di/dt=300A/μstrrReverseRecoveryTime18nsTHERMALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERMINTYPMAXUNITRθJCThermalResistanceJunctiontoCase(1)1.
8°C/WRθJAThermalResistanceJunctiontoAmbient(1)(2)50°C/W(1)RθJCisdeterminedwiththedevicemountedona1-inch2(6.
45-cm2),2-oz.
(0.
071-mmthick)Cupadona1.
5-inch*1.
5-inch(3.
81-cm*3.
81-cm),0.
06-inch(1.
52-mm)thickFR4PCB.
RθJCisspecifiedbydesign,whereasRθJAisdeterminedbytheuser'sboarddesign.
(2)DevicemountedonFR4materialwith1-inch2(6.
45-cm2),2-oz.
(0.
071-mmthick)Cu.
2Copyright2012,TexasInstrumentsIncorporatedCSD17552Q5Awww.
ti.
com.
cnZHCSAH0–NOVEMBER2012MaxRθJA=50°C/WMaxRθJA=125°C/Wwhenmountedonwhenmountedona1inch2(6.
45cm2)of2-minimumpadareaofoz.
(0.
071-mmthick)2-oz.
(0.
071-mmthick)Cu.
Cu.
TYPICALMOSFETCHARACTERISTICS(TA=25°Cunlessotherwisestated)Figure2.
TransientThermalImpedanceTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure3.
SaturationCharacteristicsFigure4.
TransferCharacteristicsCopyright2012,TexasInstrumentsIncorporated3CSD17552Q5AZHCSAH0–NOVEMBER2012www.
ti.
com.
cnTYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure5.
GateChargeFigure6.
CapacitanceTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure7.
ThresholdVoltagevs.
TemperatureFigure8.
On-StateResistancevs.
Gate-to-SourceVoltageTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure9.
NormalizedOn-StateResistancevs.
TemperatureFigure10.
TypicalDiodeForwardVoltage4Copyright2012,TexasInstrumentsIncorporatedCSD17552Q5Awww.
ti.
com.
cnZHCSAH0–NOVEMBER2012TYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure11.
MaximumSafeOperatingAreaFigure12.
SinglePulseUnclampedInductiveSwitchingTEXTADDEDFORSPACINGFigure13.
MaximumDrainCurrentvs.
TemperatureCopyright2012,TexasInstrumentsIncorporated5CSD17552Q5AZHCSAH0–NOVEMBER2012www.
ti.
com.
cnMECHANICALDATAQ5APackageDimensionsMILLIMETERSDIMMINNOMMAXA0.
901.
001.
10b0.
330.
410.
51c0.
200.
250.
34D14.
804.
905.
00D23.
613.
814.
02E5.
906.
006.
10E15.
705.
755.
80E23.
383.
583.
78e1.
171.
271.
37H0.
410.
560.
71K1.
10L0.
510.
610.
71L10.
060.
130.
20θ0°12°6Copyright2012,TexasInstrumentsIncorporatedCSD17552Q5Awww.
ti.
com.
cnZHCSAH0–NOVEMBER2012MILLIMETERSINCHESDIMFigure14.
RecommendedPCBPatternMINMAXMINMAXF16.
2056.
3050.
2440.
248F24.
464.
560.
1760.
18F34.
464.
560.
1760.
18F40.
650.
70.
0260.
028F50.
620.
670.
0240.
026F60.
630.
680.
0250.
027F70.
70.
80.
0280.
031F80.
650.
70.
0260.
028F90.
620.
670.
0240.
026F104.
950.
1930.
197F114.
464.
560.
1760.
18ForrecommendedcircuitlayoutforPCBdesigns,seeapplicationnoteSLPA005–ReducingRingingThroughPCBLayoutTechniques.
Q5ATapeandReelInformationNotes:1.
10-sprockethole-pitchcumulativetolerance±0.
22.
Cambernottoexceed1mmin100mm,noncumulativeover250mm3.
Material:blackstatic-dissipativepolystyrene4.
Alldimensionsareinmm(unlessotherwisespecified)5.
A0andB0measuredonaplane0.
3mmabovethebottomofthepocketCopyright2012,TexasInstrumentsIncorporated7PACKAGEOPTIONADDENDUMwww.
ti.
com10-Dec-2020Addendum-Page1PACKAGINGINFORMATIONOrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Leadfinish/Ballmaterial(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)SamplesCSD17552Q5AACTIVEVSONPDQJ82500RoHS-Exempt&GreenSNLevel-1-260C-UNLIM-55to150CSD17552(1)Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.
Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.
Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)RoHS:TIdefines"RoHS"tomeansemiconductorproductsthatarecompliantwiththecurrentEURoHSrequirementsforall10RoHSsubstances,includingtherequirementthatRoHSsubstancedonotexceed0.
1%byweightinhomogeneousmaterials.
Wheredesignedtobesolderedathightemperatures,"RoHS"productsaresuitableforuseinspecifiedlead-freeprocesses.
TImayreferencethesetypesofproductsas"Pb-Free".
RoHSExempt:TIdefines"RoHSExempt"tomeanproductsthatcontainleadbutarecompliantwithEURoHSpursuanttoaspecificEURoHSexemption.
Green:TIdefines"Green"tomeanthecontentofChlorine(Cl)andBromine(Br)basedflameretardantsmeetJS709BlowhalogenrequirementsofcombinedrepresenttheentireDeviceMarkingforthatdevice.
(6)Leadfinish/Ballmaterial-OrderableDevicesmayhavemultiplematerialfinishoptions.
Finishoptionsareseparatedbyaverticalruledline.
Leadfinish/Ballmaterialvaluesmaywraptotwolinesifthefinishvalueexceedsthemaximumcolumnwidth.
ImportantInformationandDisclaimer:TheinformationprovidedonthispagerepresentsTI'sknowledgeandbeliefasofthedatethatitisprovided.
TIbasesitsknowledgeandbeliefoninformationprovidedbythirdparties,andmakesnorepresentationorwarrantyastotheaccuracyofsuchinformation.
Effortsareunderwaytobetterintegrateinformationfromthirdparties.
TIhastakenandcontinuestotakereasonablestepstoproviderepresentativeandaccurateinformationbutmaynothaveconducteddestructivetestingorchemicalanalysisonincomingmaterialsandchemicals.
TIandTIsuppliersconsidercertaininformationtobeproprietary,andthusCASnumbersandotherlimitedinformationmaynotbeavailableforrelease.
InnoeventshallTI'sliabilityarisingoutofsuchinformationexceedthetotalpurchasepriceoftheTIpart(s)atissueinthisdocumentsoldbyTItoCustomeronanannualbasis.
重重要要声声明明和和免免责责声声明明TI均以"原样"提供技术性及可靠性数据(包括数据表)、设计资源(包括参考设计)、应用或其他设计建议、网络工具、安全信息和其他资源,不保证其中不含任何瑕疵,且不做任何明示或暗示的担保,包括但不限于对适销性、适合某特定用途或不侵犯任何第三方知识产权的暗示担保.
所述资源可供专业开发人员应用TI产品进行设计使用.
您将对以下行为独自承担全部责任:(1)针对您的应用选择合适的TI产品;(2)设计、验证并测试您的应用;(3)确保您的应用满足相应标准以及任何其他安全、安保或其他要求.
所述资源如有变更,恕不另行通知.
TI对您使用所述资源的授权仅限于开发资源所涉及TI产品的相关应用.
除此之外不得复制或展示所述资源,也不提供其它TI或任何第三方的知识产权授权许可.
如因使用所述资源而产生任何索赔、赔偿、成本、损失及债务等,TI对此概不负责,并且您须赔偿由此对TI及其代表造成的损害.
TI所提供产品均受TI的销售条款(http://www.
ti.
com.
cn/zh-cn/legal/termsofsale.
html)以及ti.
com.
cn上或随附TI产品提供的其他可适用条款的约束.
TI提供所述资源并不扩展或以其他方式更改TI针对TI产品所发布的可适用的担保范围或担保免责声明.
IMPORTANTNOTICE邮寄地址:上海市浦东新区世纪大道1568号中建大厦32楼,邮政编码:200122Copyright2020德州仪器半导体技术(上海)有限公司