封装www

CSD17555Q5Awww.
ti.
com.
cnZHCS974–JUNE201230VN通通道道NexFET功功率率金金属属氧氧化化物物场场效效应应晶晶体体管管(MOSFET)查查询询样样品品:CSD17555Q5A产产品品概概述述1特特性性TA=25°C时测得,除非另外注明典典型型值值单单位位2超超低低Qg和和QgdVDS漏源电压30V低低热热阻阻Qg栅极电荷总量(4.
5V)23nC雪雪崩崩级级Qgd栅漏栅极电荷5nCVGS=4.
5V2.
8mΩ无无铅铅端端子子镀镀层层RDS(接漏源导通电阻通)VGS=10V2.
3mΩ符符合合RoHS标标准准VGS(th)阀值电压1.
5V无无卤卤素素小小外外形形无无引引线线(SON)5mm*6mm塑塑料料封封装装订订购购信信息息器器件件封封装装介介质质数数量量出出货货应应用用范范围围5mmx6mmSON塑13英寸CSD17555Q5A2500卷带封装料封装卷带在在网网络络互互联联、、电电信信、、和和计计算算系系统统中中的的负负载载点点同同步步降降压压绝绝对对最最大大额额定定值值针针对对控控制制和和同同步步FET应应用用进进行行了了优优化化TA=25°C时测得,除非另外注明值值单单位位VDS漏源电压30V说说明明VGS栅源电压±20V此NexFET功率MOSFET被设计用于在功率转换持续漏极电流(受封装限制),TC=25°C时100应用中大大降低功率损失.
测得AID持续漏极电流(受芯片限制),TC=25°C116时测得顶顶视视图图持续漏极电流(1)24AIDM脉冲漏极电流,TA=25°C时测得(2)153APD功率耗散(1)3WTJ,运行结温和储存温度范围-55至150°CTSTG雪崩能量,单一脉冲EAS180mJID=60A,L=0.
1mH,RG=25Ω(1)RθJA=42°C/W,这是在一块厚度为0.
06英寸(1.
52mm)的FR4印刷电路板(PCB)上的一英寸2(6.
45cm2),2盎司(厚度0.
071mm)铜过渡垫片上测得的典型值.
(2)脉冲持续时间≤300μs,占空比≤2%SPACESPACERDS(on)vsVGSGATECHARGE1Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
2NexFETisatrademarkofTexasInstruments.
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
Copyright2012,TexasInstrumentsIncorporatedProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.
ProductionprocessingdoesnotEnglishDataSheet:SLPS353necessarilyincludetestingofallparameters.
CSD17555Q5AZHCS974–JUNE2012www.
ti.
com.
cnThesedeviceshavelimitedbuilt-inESDprotection.
TheleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoamduringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.
ELECTRICALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERTESTCONDITIONSMINTYPMAXUNITStaticCharacteristicsBVDSSDraintoSourceVoltageVGS=0V,IDS=250μA30VIDSSDraintoSourceLeakageCurrentVGS=0V,VDS=24V1μAIGSSGatetoSourceLeakageCurrentVDS=0V,VGS=20V100nAVGS(th)GatetoSourceThresholdVoltageVDS=VGS,IDS=250μA11.
51.
9VVGS=4.
5V,IDS=25A2.
83.
4mRDS(on)DraintoSourceOnResistanceVGS=10V,IDS=25A2.
32.
7mgfsTransconductanceVDS=15V,IDS=25A109SDynamicCharacteristicsCissInputCapacitance38754650pFVGS=0V,VDS=15V,CossOutputCapacitance9491139pFf=1MHzCrssReverseTransferCapacitance7087pFRGSeriesGateResistance0.
81.
6QgGateChargeTotal(4.
5V)2328nCQgdGateChargeGatetoDrain5nCVDS=15V,IDS=25AQgsGateChargeGatetoSource7.
5nCQg(th)GateChargeatVth5nCQossOutputChargeVDS=14V,VGS=0V25nCtd(on)TurnOnDelayTime14nstrRiseTime18nsVDS=15V,VGS=4.
5V,IDS=25A,RG=2td(off)TurnOffDelayTime20nstfFallTime5.
3nsDiodeCharacteristicsVSDDiodeForwardVoltageISD=25A,VGS=0V0.
81VQrrReverseRecoveryCharge31nCVDD=14V,IF=25A,di/dt=300A/μstrrReverseRecoveryTime25nsTHERMALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERMINTYPMAXUNITRθJCThermalResistanceJunctiontoCase(1)2.
2°C/WRθJAThermalResistanceJunctiontoAmbient(1)(2)52°C/W(1)RθJCisdeterminedwiththedevicemountedona1-inch2(6.
45-cm2),2-oz.
(0.
071-mmthick)Cupadona1.
5-inch*1.
5-inch(3.
81-cm*3.
81-cm),0.
06-inch(1.
52-mm)thickFR4PCB.
RθJCisspecifiedbydesign,whereasRθJAisdeterminedbytheuser'sboarddesign.
(2)DevicemountedonFR4materialwith1-inch2(6.
45-cm2),2-oz.
(0.
071-mmthick)Cu.
2Copyright2012,TexasInstrumentsIncorporatedCSD17555Q5Awww.
ti.
com.
cnZHCS974–JUNE2012MaxRθJA=52°C/WMaxRθJA=128°C/Wwhenmountedonwhenmountedona1inch2(6.
45cm2)of2-minimumpadareaofoz.
(0.
071-mmthick)2-oz.
(0.
071-mmthick)Cu.
Cu.
TYPICALMOSFETCHARACTERISTICS(TA=25°Cunlessotherwisestated)Figure1.
TransientThermalImpedanceCopyright2012,TexasInstrumentsIncorporated3CSD17555Q5AZHCS974–JUNE2012www.
ti.
com.
cnTYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure2.
SaturationCharacteristicsFigure3.
TransferCharacteristicsTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure4.
GateChargeFigure5.
CapacitanceTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure6.
ThresholdVoltagevs.
TemperatureFigure7.
On-StateResistancevs.
Gate-to-SourceVoltage4Copyright2012,TexasInstrumentsIncorporatedCSD17555Q5Awww.
ti.
com.
cnZHCS974–JUNE2012TYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure8.
NormalizedOn-StateResistancevs.
TemperatureFigure9.
TypicalDiodeForwardVoltageTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure10.
MaximumSafeOperatingAreaFigure11.
SinglePulseUnclampedInductiveSwitchingTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure12.
MaximumDrainCurrentvs.
TemperatureCopyright2012,TexasInstrumentsIncorporated5CSD17555Q5AZHCS974–JUNE2012www.
ti.
com.
cnMECHANICALDATAQ5APackageDimensionsMILLIMETERSDIMMINNOMMAXA0.
901.
001.
10b0.
330.
410.
51c0.
200.
250.
34D14.
804.
905.
00D23.
613.
814.
02E5.
906.
006.
10E15.
705.
755.
80E23.
383.
583.
78e1.
171.
271.
37H0.
410.
560.
71K1.
10L0.
510.
610.
71L10.
060.
130.
20θ0°12°6Copyright2012,TexasInstrumentsIncorporatedCSD17555Q5Awww.
ti.
com.
cnZHCS974–JUNE2012RecommendedPCBPatternNOTE:Dimensionsareinmm(inches).
TEXTADDEDFORSPACINGStencilRecommendationNOTE:Dimensionsareinmm(inches).
TEXTADDEDFORSPACINGForrecommendedcircuitlayoutforPCBdesigns,seeapplicationnoteSLPA005–ReducingRingingThroughPCBLayoutTechniques.
Copyright2012,TexasInstrumentsIncorporated7CSD17555Q5AZHCS974–JUNE2012www.
ti.
com.
cnQ5ATapeandReelInformationNOTES:1.
10-sprockethole-pitchcumulativetolerance±0.
22.
Cambernottoexceed1mmin100mm,noncumulativeover250mm3.
Material:blackstatic-dissipativepolystyrene4.
Alldimensionsareinmm(unlessotherwisespecified)5.
A0andB0measuredonaplane0.
3mmabovethebottomofthepocketSpacer8Copyright2012,TexasInstrumentsIncorporatedPACKAGEOPTIONADDENDUMwww.
ti.
com10-Dec-2020Addendum-Page1PACKAGINGINFORMATIONOrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Leadfinish/Ballmaterial(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)SamplesCSD17555Q5AACTIVEVSONPDQJ82500RoHS-Exempt&GreenSNLevel-1-260C-UNLIM-55to150CSD17555(1)Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.
Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.
Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)RoHS:TIdefines"RoHS"tomeansemiconductorproductsthatarecompliantwiththecurrentEURoHSrequirementsforall10RoHSsubstances,includingtherequirementthatRoHSsubstancedonotexceed0.
1%byweightinhomogeneousmaterials.
Wheredesignedtobesolderedathightemperatures,"RoHS"productsaresuitableforuseinspecifiedlead-freeprocesses.
TImayreferencethesetypesofproductsas"Pb-Free".
RoHSExempt:TIdefines"RoHSExempt"tomeanproductsthatcontainleadbutarecompliantwithEURoHSpursuanttoaspecificEURoHSexemption.
Green:TIdefines"Green"tomeanthecontentofChlorine(Cl)andBromine(Br)basedflameretardantsmeetJS709Blowhalogenrequirementsofwww.
ti.
com.
cn/zh-cn/legal/termsofsale.
html)以及ti.
com.
cn上或随附TI产品提供的其他可适用条款的约束.
TI提供所述资源并不扩展或以其他方式更改TI针对TI产品所发布的可适用的担保范围或担保免责声明.
IMPORTANTNOTICE邮寄地址:上海市浦东新区世纪大道1568号中建大厦32楼,邮政编码:200122Copyright2020德州仪器半导体技术(上海)有限公司