boardwww.55fang.com

TXS4555www.
ti.
comSBOS550B–FEBRUARY2011–REVISEDAUGUST20131.
8V/3VSIMCardPowerSupplyWithLevelTranslatorCheckforSamples:TXS45551FEATURESLevelTranslator–VCCRangeof1.
65Vto3.
3V–VBATTRangefrom2.
3to5.
5VLow-Dropout(LDO)Regulator–50-mALDORegulatorWithEnable–1.
8-Vor2.
95-VSelectableOutputVoltage–2.
3-Vto5.
5-VInputVoltageRange–VeryLowDropout:100mV(Max)at50mAIncorporatesShutdownFeaturefortheSIMCardSignalsAccordingtoISO-7816-3ESDProtectionExceedsJESD22–2000-VHuman-BodyModel(A114-B)–500-VCharged-DeviceModel(C101)–8kVHBMforSIMPinsPackageNote:TheExposedcenterthermalpadmustbe–16-PinQFN(3mmx3mm)connectedtoGround–12-PinQFN(2mmx1.
7mm)DESCRIPTIONTheTXS4555isacompleteSmartIdentityModule(SIM)cardsolutionforinterfacingwirelessbasebandprocessorswithaSIMcardtostoreI/Oformobilehandsetapplications.
ThedevicecomplieswithISO/IECSmart-CardInterfacerequirementsaswellasGSMand3Gmobilestandards.
Itincludesahigh-speedleveltranslatorcapableofsupportingClass-B(2.
95V)andClass-C(1.
8V)interfaces,alow-dropout(LDO)voltageregulatorthathasoutputvoltagesthatareselectablebetween2.
95-VClass-Band1.
8-VClass-Cinterfaces.
Thedevicehastwosupplyvoltagepins.
VCCcanbeoperatedoverthefullrangeof1.
65Vto3.
3VandVBATTfrom2.
3to5.
5V.
VPWRissettoeither1.
8Vor2.
95VandissuppliedbyaninternalLDO.
TheintegratedLDOacceptsinputvoltagesashighas5.
5Vandoutputseither1.
8Vor2.
95Vat50mAtotheB-sidecircuitryandtotheexternalSIMcard.
TheTXS4555enablessystemdesignerstoeasilyinterfacelow-voltagemicroprocessorstoSIMcardsoperatingat1.
8Vor2.
95V.
TheTXS4555alsoincorporatesshutdownsequencefortheSIMcardpinsbasedontheISO7816-3specificationforSIMcards.
PropershutdownoftheSIMcardsignalshelpsinpreventionofcorruptionofdataduringaccidentalshutdownofthephone.
Thedevicealsohas8kVHBMprotectionfortheSIMpinsandstandard2kVHBMprotectionforalltheotherpins.
1Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
Copyright2011–2013,TexasInstrumentsIncorporatedProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.
Productionprocessingdoesnotnecessarilyincludetestingofallparameters.
TXS4555SBOS550B–FEBRUARY2011–REVISEDAUGUST2013www.
ti.
comThisintegratedcircuitcanbedamagedbyESD.
TexasInstrumentsrecommendsthatallintegratedcircuitsbehandledwithappropriateprecautions.
Failuretoobserveproperhandlingandinstallationprocedurescancausedamage.
ESDdamagecanrangefromsubtleperformancedegradationtocompletedevicefailure.
Precisionintegratedcircuitsmaybemoresusceptibletodamagebecauseverysmallparametricchangescouldcausethedevicenottomeetitspublishedspecifications.
Figure1.
InterfacingwithSIMCardPINFUNCTIONSPINNO.
PINNAMETYPE(1)DESCRIPTIONRGTRUTEN111IEnable/disablecontrolinput.
PullENlowtoplacealloutputsinHi-ZstateandtodisabletheLDO.
ReferencedtoVCC.
SEL212IPintoprogramVSIMvalue(Low=1.
8V,High=2.
95V)Vcc31PPowersupplyvoltagewhichpowersallA-portI/OsandcontrolinputsVBATT52PBatterypowersupplyVSIM73OSIMcardPower-Supplypin(1.
8Vor2.
95V)SIM_I/O84I/OBidirectionalSIMI/OpinwhichconnectedtoI/OpinoftheSIMcardconnectorSIM_RST95OSIMResetpinwhichconnectstoRESETpinoftheSIMcardconnectorGND106GGroundSIM_CLK117OClocksignalpinwhichconnectstoCLKpinoftheSIMcardconnectorCLK138IClocksignalpinconnectedfrombasebandprocessorRST149ISIMResetpinconnectedfrombasebandprocessorI/O1510I/OBidirectionalSIMI/OpinwhichconnectedfrombasebandprocessorNC4,6,12,–NCNoConnects16(1)G=Ground,I=Input,O=Output,P=Power2SubmitDocumentationFeedbackCopyright2011–2013,TexasInstrumentsIncorporatedProductFolderLinks:TXS4555TXS4555www.
ti.
comSBOS550B–FEBRUARY2011–REVISEDAUGUST2013Figure2.
BlockDiagramFigure3.
BlockDiagramoftheLDOCopyright2011–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback3ProductFolderLinks:TXS4555TXS4555SBOS550B–FEBRUARY2011–REVISEDAUGUST2013www.
ti.
comFigure4.
ShutdownSequenceforSIM_RST,SIM_CLK,SIM_IOandVSIMTheshutdownsequencefortheSIMsignalsisbasedontheISO7816-3specification.
Theshutdownsequenceofthesesignalshelpstoproperlydisablethesechannelsandnothaveanycorruptionofdataaccidently.
Also,thisisalsohelpfulwhentheSIMcardispresentinahotswapslotandwhenpullingouttheSIMcard,theorderlyshutdownofthesesignalshelpavoidanyimproperwrite/corruptionofdata.
WhenENistakenlow,theshutdownsequencehappensbypoweringoftheSIM_RSTchannel.
Oncethatisachieved,SIM_CLK,SIM_I/OandVSIMarepoweredsequentiallyonebyone.
Thereisaninternal2Kpull-downvalueontheSIMpinsandhelpstopullthesechannelslow.
Theshutdowntimesequenceisintheorderofafewmicroseconds.
ItisimportantthatENistakenlowbeforeVBATandVCCsuppliesgolowsothattheshutdownsequencecanbeinitiatedproperly.
4SubmitDocumentationFeedbackCopyright2011–2013,TexasInstrumentsIncorporatedProductFolderLinks:TXS4555TXS4555www.
ti.
comSBOS550B–FEBRUARY2011–REVISEDAUGUST2013ABSOLUTEMAXIMUMRATINGS(1)overoperatingfree-airtemperaturerange(unlessotherwisenoted)VALUEUNITMINMAXLEVELTRANSLATORVCCSupplyvoltagerange–0.
34.
0VVCC-port–0.
54.
6VIInputvoltagerangeSIM-port–0.
54.
6VControlinputs–0.
54.
6VCC-port–0.
54.
6VoltagerangeappliedtoanyoutputintheVOhigh-impedanceorpower-offstateVSIM-port–0.
54.
6VControlinputs–0.
54.
6VCC-port–0.
54.
6VoltagerangeappliedtoanyoutputintheVOhighorlowstateSIM-port–0.
54.
6VControlinputs–0.
54.
6IIKInputclampcurrentVI<0–50mAIOKOutputclampcurrentVO<0–50mAIOContinuousoutputcurrent±50mAContinuouscurrentthroughVCCAorGND±100mATstgStoragetemperaturerange–65150°CLDOVBATInputvoltagerange–0.
36VVOUTOutputvoltagerange–0.
36VPeakoutputcurrentTBDmAContinuoustotalpowerdissipationTBDTJJunctiontemperaturerange–55150°CTstgStoragetemperaturerange–55150°CHuman-BodyModel(HBM)2kVESDrating(hostside)Charged-DeviceModel(CDM)500VESDrating(SIMside)Human-BodyModel(HBM)8kV(1)Stressesbeyondthoselistedunder"absolutemaximumratings"maycausepermanentdamagetothedevice.
Thesearestressratingsonly,andfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunder"recommendedoperatingconditions"isnotimplied.
Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.
THERMALINFORMATIONTXS4555THERMALMETRIC(1)RGTRUTUNITS16PINS12PINSθJAJunction-to-ambientthermalresistance4787.
2θJBJunction-to-boardthermalresistance25.
12N/A°C/WψJTJunction-to-topcharacterizationparameter1.
31.
7θJCbotJunction-to-case(bottom)thermalresistance3.
6n/A(1)Formoreinformationabouttraditionalandnewthermalmetrics,seetheICPackageThermalMetricsapplicationreport,SPRA953.
Copyright2011–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback5ProductFolderLinks:TXS4555TXS4555SBOS550B–FEBRUARY2011–REVISEDAUGUST2013www.
ti.
comRECOMMENDEDOPERATINGCONDITIONS(1)MINMAXUNITLEVELTRANSLATORVCCSupplyvoltage1.
653.
3VVCC-portEN,SEL,RST,CLK,I/OVCC*0.
7VCCHigh-levelinputVIHVvoltageSIM-portSIM_I/OVsim*0.
7VsimVCC-portEN,SEL,RST,CLK,I/O0VCC*0.
3Low-levelinputVILVvoltageSIM-portSIM_I/O0Vsim*0.
3Δt/ΔvInputtransitionriseorfallrate5ns/VTAOperatingfree-airtemperature–4085°C(1)AllunuseddatainputsofthedevicemustbeheldatVCCIorGNDtoensureproperdeviceoperation.
RefertotheTIapplicationreport,ImplicationsofSloworFloatingCMOSInputs,literaturenumberSCBA004.
ELECTRICALCHARACTERISTICS–LEVELTRANSLATORoverrecommendedoperatingfree-airtemperaturerange(unlessotherwisenoted)PARAMETERTESTCONDITIONSVCCVSIMMINTYP(1)MAXUNITSIM_RSTIOH=–1mA1.
65Vto3.
3V1.
8V/2.
95V(2)VSIM*0.
8VSIM_CLKIOH=–1mAVSIM*0.
8VOHSIM_I/OIOH=–20AVSIM*0.
8I/OIOH=–20AVCC*0.
8SIM_RSTIOL=1mA1.
65Vto3.
3V1.
8V/2.
95V(2)VSIM*0.
2VSIM_CLKIOL=1mAVSIM*0.
2VOLSIM_I/OIOL=1mA0.
3I/OIOL=1mA0.
3IIControlinputsVI=EN,1.
8V/3V1.
65Vto3.
3V1.
8V/2.
95V(2)±1AICCI/OVI=VCCI,IO=01.
65Vto3.
3V1.
8V/2.
95V(2)±5AI/Oport8pFCioSIMports4CiControlinputsVI=VCCorGND4pF(1)AlltypicalvaluesareatTA=25°C.
(2)(SuppliedbyLDO)LDOELECTRICALCHARACTERISTICSPARAMETERTESTCONDITIONSMINTYP(1)MAXUNITVBATInputvoltage2.
35.
5VVSIMOutputvoltageClass-BMode(SEL=VCC)2.
852.
953.
05VClass-CMode(SEL=0)1.
71.
81.
9VDODropoutvoltageIOUT=50mA100mVIGNDGround-pincurrentIOUT=0mA35AShutdowncurrentISHDNVENx≤0.
4V,(VSIM+VDO)≤VBAT≤5.
5V,TJ=85°C3.
5A(IGND)IOUT(SC)Short-circuitcurrentRL=0145mACOUTOutputCapacitor1Ff=1kHz50VBAT=3.
25V,VSIM=1.
8Vor2.
95V,Power-supplyrejectionPSRRdBratioCOUT=1F,IOUT=50mAf=10kHz40TSTRStart-uptimeVSIM=1.
8Vor2.
95V,IOUT=50mA,COUT=1F400SOperatingjunctionTJ–40125°Ctemperature(1)AlltypicalvaluesareatTA=25°C.
6SubmitDocumentationFeedbackCopyright2011–2013,TexasInstrumentsIncorporatedProductFolderLinks:TXS4555TXS4555www.
ti.
comSBOS550B–FEBRUARY2011–REVISEDAUGUST2013GENERALELECTRICALCHARACTERISTICSoveroperatingfree-airtemperaturerange(unlessotherwisenoted)PARAMETERTESTCONDITIONSMINTYPMAXUNITRI/OPUI/Opull-up162024kΩRSIMPUSIM_I/Opull-up101418kΩActivepull-downsareconnectedtotheVSIMregulatoroutputtotheRSIMPDSIM_I/Opull-down3kΩSIM_CLK,SIM_RST,SIM_I/OwhenEN=0SWITCHINGCHARACTERISTICSoverrecommendedoperatingfree-airtemperaturerange(unlessotherwisenoted)VCC=1.
8V±0.
15VUNITPARAMETERTESTCONDITIONSMINMAXVSIM=1.
8Vor2.
95VSUPPLIEDBYINTERNALLDOtrASIM_I/O1sSIM_RST1strBSIM_CLK18nsCL=50pFSIM_I/O1usfmaxSIM_CLK25MHzDutyCycleSIM_CLK40%60%OPERATINGCHARACTERISTICSTA=25°C,VSIM=1.
8VVccTYPUNITPARAMETERTESTCONDITIONS1.
8VClassB13CpdA(1)CL=0,f=5MHz,tr=tf=1nspFClassC11(1)Powerdissipationcapacitancepertransceiver.
Copyright2011–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback7ProductFolderLinks:TXS4555TXS4555SBOS550B–FEBRUARY2011–REVISEDAUGUST2013www.
ti.
comTYPICALCHARACTERISTICSFigure5.
PSRRFigure6.
DropoutVoltagevsOutputCurrentFigure7.
OutputVoltagevsTemperature,Class-B/CFigure8.
LoadRegulation,Iout=50mA,Class-C8SubmitDocumentationFeedbackCopyright2011–2013,TexasInstrumentsIncorporatedProductFolderLinks:TXS4555TXS4555www.
ti.
comSBOS550B–FEBRUARY2011–REVISEDAUGUST2013APPLICATIONINFORMATIONTheLDO'sincludedontheTXS4555achieveultra-widebandwidthandhighloopgain,resultinginextremelyhighPSRRatverylowheadroom(VBAT–VSIM).
TheTXS4555providesfixedregulationat1.
8Vor2.
95V.
Lownoise,enable,lowgroundpincurrentmakeitidealforportableapplications.
Thedeviceofferssub-bandgapoutputvoltages,currentlimitandthermalprotection,andisfullyspecifiedfrom–40°Cto125°C.
Figure9.
TypicalApplicationCircuitforTXS4555INPUTANDOUTPUTCAPACITORREQUIREMENTSItisgoodanalogdesignpracticetoconnecta1.
0Flowequivalentseriesresistance(ESR)capacitoracrosstheinputsupply(VBAT)neartheregulator.
Also,a0.
1Fisrequiredforthelogiccoresupply(VDDIO).
Thiscapacitorwillcounteractreactiveinputsourcesandimprovetransientresponse,noiserejection,andripplerejection.
Ahigher-valuecapacitormaybenecessaryiflarge,fastrise-timeloadtransientsareanticipatedorifthedeviceislocatedseveralinchesfromthepowersource.
TheLDO'saredesignedtobestablewithstandardceramiccapacitorsofvalues1.
0Forlarger.
X5R-andX7R-typecapacitorsarebestbecausetheyhaveminimalvariationinvalueandESRovertemperature.
MaximumESRshouldbe<1.
0Ω.
OUTPUTNOISEInmostLDO's,thebandgapisthedominantnoisesource.
ToimproveacperformancesuchasPSRR,outputnoise,andtransientresponse,itisrecommendedthattheboardbedesignedwithseparategroundplanesforVINandVOUT,witheachgroundplaneconnectedonlyattheGNDpinofthedevice.
Inaddition,thegroundconnectionforthebypasscapacitorshouldconnectdirectlytotheGNDpinofthedevice.
INTERNALCURRENTLIMITTheTXS4555internalcurrentlimithelpsprotecttheregulatorduringfaultconditions.
Duringcurrentlimit,theoutputsourcesafixedamountofcurrentthatislargelyindependentofoutputvoltage.
Forreliableoperation,thedeviceshouldnotbeoperatedinacurrentlimitstateforextendedperiodsoftime.
ThePMOSpasselementintheTXS4555hasabuilt-inbodydiodethatconductscurrentwhenthevoltageatVSIMexceedsthevoltageatVBAT.
Thiscurrentisnotlimited,soifextendedreversevoltageoperationisanticipated,externallimitingmaybeappropriate.
DROPOUTVOLTAGETheTXS4555usesaPMOSpasstransistortoachievelowdropout.
When(VBAT–VSIM)islessthanthedropoutvoltage(VDO),thePMOSpassdeviceisinitslinearregionofoperationandtheinput-to-outputresistanceistheRDS(ON)ofthePMOSpasselement.
VDOwillapproximatelyscalewithoutputcurrentbecausethePMOSdevicebehaveslikearesistorindropout.
STARTUPTheTXS4555usesaquick-startcircuitwhichallowsthecombinationofverylowoutputnoiseandfaststart-uptimes.
Copyright2011–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback9ProductFolderLinks:TXS4555TXS4555SBOS550B–FEBRUARY2011–REVISEDAUGUST2013www.
ti.
comTRANSIENTRESPONSEAswithanyregulator,increasingthesizeoftheoutputcapacitorreducesover/undershootmagnitudebutincreasesdurationofthetransientresponse.
MINIMUMLOADTheTXS4555isstableandwell-behavedwithnooutputload.
TraditionalPMOSLDOregulatorssufferfromlowerloopgainatverylightoutputloads.
TheTXS4555employsaninnovativelow-currentmodecircuittoincreaseloopgainunderverylightorno-loadconditions,resultinginimprovedoutputvoltageregulationperformancedowntozerooutputcurrent.
THERMALINFORMATIONThermalProtectionThermalprotectiondisablestheoutputwhenthejunctiontemperaturerisestoapproximately+160°C,allowingthedevicetocool.
Whenthejunctiontemperaturecoolstoapproximately+140°Ctheoutputcircuitryisagainenabled.
Dependingonpowerdissipation,thermalresistance,andambienttemperature,thethermalprotectioncircuitmaycycleonandoff.
Thiscyclinglimitsthedissipationoftheregulator,protectingitfromdamagebecauseofoverheating.
Anytendencytoactivatethethermalprotectioncircuitindicatesexcessivepowerdissipationoraninadequateheatsink.
Forreliableoperation,junctiontemperatureshouldbelimitedto+125°Cmaximum.
Toestimatethemarginofsafetyinacompletedesign(includingheatsink),increasetheambienttemperatureuntilthethermalprotectionistriggered;useworst-caseloadsandsignalconditions.
Forgoodreliability,thermalprotectionshouldtriggeratleast+35°Cabovethemaximumexpectedambientconditionofyourparticularapplication.
Thisconfigurationproducesaworst-casejunctiontemperatureof+125°Catthehighestexpectedambienttemperatureandworst-caseload.
TheinternalprotectioncircuitryoftheTXS4555hasbeendesignedtoprotectagainstoverloadconditions.
Itwasnotintendedtoreplaceproperheatsinking.
ContinuouslyrunningtheTXS4555intothermalshutdownwilldegradedevicereliability.
10SubmitDocumentationFeedbackCopyright2011–2013,TexasInstrumentsIncorporatedProductFolderLinks:TXS4555TXS4555www.
ti.
comSBOS550B–FEBRUARY2011–REVISEDAUGUST2013REVISIONHISTORYChangesfromRevisionA(March2011)toRevisionBPageRemovedOrderingInformationtable.
2UpdatedVIHandVILtospecifyadditionalinformation.
6Copyright2011–2013,TexasInstrumentsIncorporatedSubmitDocumentationFeedback11ProductFolderLinks:TXS4555PACKAGEOPTIONADDENDUMwww.
ti.
com10-Dec-2020Addendum-Page1PACKAGINGINFORMATIONOrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Leadfinish/Ballmaterial(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)SamplesTXS4555RGTRACTIVEVQFNRGT163000RoHS&GreenNIPDAULevel-2-260C-1YEAR-40to85ZUTTXS4555RUTRACTIVEUQFNRUT123000RoHS&GreenNIPDAUAGLevel-1-260C-UNLIM-40to8569R(1)Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.
Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.
Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)RoHS:TIdefines"RoHS"tomeansemiconductorproductsthatarecompliantwiththecurrentEURoHSrequirementsforall10RoHSsubstances,includingtherequirementthatRoHSsubstancedonotexceed0.
1%byweightinhomogeneousmaterials.
Wheredesignedtobesolderedathightemperatures,"RoHS"productsaresuitableforuseinspecifiedlead-freeprocesses.
TImayreferencethesetypesofproductsas"Pb-Free".
RoHSExempt:TIdefines"RoHSExempt"tomeanproductsthatcontainleadbutarecompliantwithEURoHSpursuanttoaspecificEURoHSexemption.
Green:TIdefines"Green"tomeanthecontentofChlorine(Cl)andBromine(Br)basedflameretardantsmeetJS709Blowhalogenrequirementsof<=1000ppmthreshold.
Antimonytrioxidebasedflameretardantsmustalsomeetthe<=1000ppmthresholdrequirement.
(3)MSL,PeakTemp.
-TheMoistureSensitivityLevelratingaccordingtotheJEDECindustrystandardclassifications,andpeaksoldertemperature.
(4)Theremaybeadditionalmarking,whichrelatestothelogo,thelottracecodeinformation,ortheenvironmentalcategoryonthedevice.
(5)MultipleDeviceMarkingswillbeinsideparentheses.
OnlyoneDeviceMarkingcontainedinparenthesesandseparatedbya"~"willappearonadevice.
IfalineisindentedthenitisacontinuationofthepreviouslineandthetwocombinedrepresenttheentireDeviceMarkingforthatdevice.
(6)Leadfinish/Ballmaterial-OrderableDevicesmayhavemultiplematerialfinishoptions.
Finishoptionsareseparatedbyaverticalruledline.
Leadfinish/Ballmaterialvaluesmaywraptotwolinesifthefinishvalueexceedsthemaximumcolumnwidth.
ImportantInformationandDisclaimer:TheinformationprovidedonthispagerepresentsTI'sknowledgeandbeliefasofthedatethatitisprovided.
TIbasesitsknowledgeandbeliefoninformationprovidedbythirdparties,andmakesnorepresentationorwarrantyastotheaccuracyofsuchinformation.
Effortsareunderwaytobetterintegrateinformationfromthirdparties.
TIhastakenandcontinuestotakereasonablestepstoproviderepresentativeandaccurateinformationbutmaynothaveconducteddestructivetestingorchemicalanalysisonincomingmaterialsandchemicals.
TIandTIsuppliersconsidercertaininformationtobeproprietary,andthusCASnumbersandotherlimitedinformationmaynotbeavailableforrelease.
InnoeventshallTI'sliabilityarisingoutofsuchinformationexceedthetotalpurchasepriceoftheTIpart(s)atissueinthisdocumentsoldbyTItoCustomeronanannualbasis.
PACKAGEOPTIONADDENDUMwww.
ti.
com10-Dec-2020Addendum-Page2TAPEANDREELINFORMATION*AlldimensionsarenominalDevicePackageTypePackageDrawingPinsSPQReelDiameter(mm)ReelWidthW1(mm)A0(mm)B0(mm)K0(mm)P1(mm)W(mm)Pin1QuadrantTXS4555RGTRVQFNRGT163000330.
012.
43.
33.
31.
18.
012.
0Q2TXS4555RUTRUQFNRUT123000180.
08.
41.
952.
30.
754.
08.
0Q1PACKAGEMATERIALSINFORMATIONwww.
ti.
com18-Nov-2020PackMaterials-Page1*AlldimensionsarenominalDevicePackageTypePackageDrawingPinsSPQLength(mm)Width(mm)Height(mm)TXS4555RGTRVQFNRGT163000853.
0449.
035.
0TXS4555RUTRUQFNRUT123000202.
0201.
028.
0PACKAGEMATERIALSINFORMATIONwww.
ti.
com18-Nov-2020PackMaterials-Page2www.
ti.
comPACKAGEOUTLINEC16X0.
300.
181.
450.
116X0.
50.
31MAX(0.
2)TYP0.
050.
0012X0.
54X1.
5A3.
12.
9B3.
12.
9VQFN-1mmmaxheightRGT0016APLASTICQUADFLATPACK-NOLEAD4219032/A02/2017PIN1INDEXAREA0.
08SEATINGPLANE14912581613(OPTIONAL)PIN1ID0.
1CAB0.
05EXPOSEDTHERMALPADSYMMSYMM17NOTES:1.
Alllineardimensionsareinmillimeters.
Anydimensionsinparenthesisareforreferenceonly.
DimensioningandtolerancingperASMEY14.
5M.
2.
Thisdrawingissubjecttochangewithoutnotice.
3.
Thepackagethermalpadmustbesolderedtotheprintedcircuitboardforthermalandmechanicalperformance.
4.
ReferenceJEDECregistrationMO-220SCALE3.
600www.
ti.
comEXAMPLEBOARDLAYOUT0.
07MINALLAROUND0.
07MAXALLAROUND16X(0.
24)16X(0.
6)(0.
2)TYPVIA12X(0.
5)(2.
8)(2.
8)(0.
475)TYP(1.
45)(R0.
05)ALLPADCORNERS(0.
475)TYPVQFN-1mmmaxheightRGT0016APLASTICQUADFLATPACK-NOLEAD4219032/A02/2017SYMM14589121316SYMMLANDPATTERNEXAMPLEEXPOSEDMETALSHOWNSCALE:20X17NOTES:(continued)5.
Thispackageisdesignedtobesolderedtoathermalpadontheboard.
Formoreinformation,seeTexasInstrumentsliteraturenumberSLUA271(www.
ti.
com/lit/slua271).
6.
Viasareoptionaldependingonapplication,refertodevicedatasheet.
Ifanyviasareimplemented,refertotheirlocationsshownonthisview.
Itisrecommendedthatviasunderpastebefilled,pluggedortented.
SOLDERMASKOPENINGMETALUNDERSOLDERMASKSOLDERMASKDEFINEDEXPOSEDMETALMETALSOLDERMASKOPENINGSOLDERMASKDETAILSNONSOLDERMASKDEFINED(PREFERRED)EXPOSEDMETALwww.
ti.
comEXAMPLESTENCILDESIGN16X(0.
6)16X(0.
24)12X(0.
5)(2.
8)(2.
8)(1.
34)(R0.
05)TYPVQFN-1mmmaxheightRGT0016APLASTICQUADFLATPACK-NOLEAD4219032/A02/2017NOTES:(continued)7.
Lasercuttingapertureswithtrapezoidalwallsandroundedcornersmayofferbetterpasterelease.
IPC-7525mayhavealternatedesignrecommendations.
SYMMALLAROUNDMETALSOLDERPASTEEXAMPLEBASEDON0.
125mmTHICKSTENCILEXPOSEDPAD17:86%PRINTEDSOLDERCOVERAGEBYAREAUNDERPACKAGESCALE:25XSYMM1458912131617IMPORTANTNOTICEANDDISCLAIMERTIPROVIDESTECHNICALANDRELIABILITYDATA(INCLUDINGDATASHEETS),DESIGNRESOURCES(INCLUDINGREFERENCEDESIGNS),APPLICATIONOROTHERDESIGNADVICE,WEBTOOLS,SAFETYINFORMATION,ANDOTHERRESOURCES"ASIS"ANDWITHALLFAULTS,ANDDISCLAIMSALLWARRANTIES,EXPRESSANDIMPLIED,INCLUDINGWITHOUTLIMITATIONANYIMPLIEDWARRANTIESOFMERCHANTABILITY,FITNESSFORAPARTICULARPURPOSEORNON-INFRINGEMENTOFTHIRDPARTYINTELLECTUALPROPERTYRIGHTS.
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