Risefusioncharts

SemiconductorComponentsIndustries,LLC,2008December,2008Rev.
01PublicationOrderNumber:NTLJS3180PZ/DNTLJS3180PZPowerMOSFET20V,7.
7A,mCooltSinglePChannel,ESD,2x2mmWDFNPackageFeaturesWDFN2x2mmPackagewithExposedDrainPadsforExcellentThermalConductionLowestRDS(on)Solutionin2x2mmPackageFootprintSameasSC88PackageLowProfile(JS3180PZTAGWDFN6(PbFree)3000/Tape&ReelForinformationontapeandreelspecifications,includingpartorientationandtapesizes,pleaserefertoourTapeandReelPackagingSpecificationBrochure,BRD8011/D.
123654DDGDDS(TopView)PINCONNECTIONSSDPin1NTLJS3180PZTBGNTLJS3180PZhttp://onsemi.
com2THERMALRESISTANCERATINGSParameterSymbolMaxUnitJunctiontoAmbient–SteadyState(Note3)RqJA65°C/WJunctiontoAmbient–SteadyStateMinPad(Note4)RqJA180JunctiontoAmbient–t≤5s(Note3)RqJA383.
SurfaceMountedonFR4Boardusing1insqpadsize(Cuarea=1.
127insq[2oz]includingtraces).
4.
SurfaceMountedonFR4Boardusingtheminimumrecommendedpadsize(30mm2,2ozCu).
MOSFETELECTRICALCHARACTERISTICS(TJ=25°Cunlessotherwisenoted)ParameterSymbolTestConditionsMinTypMaxUnitOFFCHARACTERISTICSDraintoSourceBreakdownVoltageV(BR)DSSVGS=0V,ID=250mA20VDraintoSourceBreakdownVoltageTemperatureCoefficientV(BR)DSS/TJID=250mA,Refto25°C5.
0mV/°CZeroGateVoltageDrainCurrentIDSSVDS=16V,VGS=0VTJ=25°C1.
0mATJ=85°C10GatetoSourceLeakageCurrentIGSSVDS=0V,VGS=±8.
0V±10mAONCHARACTERISTICS(Note5)GateThresholdVoltageVGS(TH)VGS=VDS,ID=250mA0.
451.
0VGateThresholdTemperatureCoeffi-cientVGS(TH)/TJ3.
0mV/°CDraintoSourceOnResistanceRDS(on)VGS=4.
5V,ID=3.
0A3038mWVGS=2.
5V,ID=3.
0A4050VGS=1.
8V,ID=2.
0A5575VGS=1.
5V,ID=1.
8A85200ForwardTransconductancegFSVDS=16V,ID=3.
0A7.
7SCHARGES,CAPACITANCESANDGATERESISTANCEInputCapacitanceCISSVGS=0V,f=1.
0MHz,VDS=16V1100pFOutputCapacitanceCOSS180ReverseTransferCapacitanceCRSS130TotalGateChargeQG(TOT)VGS=4.
5V,VDS=16V,ID=3.
0A1319.
5nCThresholdGateChargeQG(TH)0.
5GatetoSourceChargeQGS1.
4GatetoDrainChargeQGD4.
2SWITCHINGCHARACTERISTICS(Note6)TurnOnDelayTimetd(ON)VGS=4.
5V,VDD=10V,ID=3.
0A,RG=3.
0W8.
0nsRiseTimetr15TurnOffDelayTimetd(OFF)70FallTimetf67DRAINSOURCEDIODECHARACTERISTICSForwardRecoveryVoltageVSDVGS=0V,IS=2.
0ATJ=25°C0.
71.
0VTJ=125°C0.
6ReverseRecoveryTimetRRVGS=0V,dISD/dt=100A/ms,IS=2.
0A60nsChargeTimeta16DischargeTimetb44ReverseRecoveryTimeQRR41nC5.
PulseTest:PulseWidthv300ms,DutyCyclev2%.
6.
Switchingcharacteristicsareindependentofoperatingjunctiontemperatures.
NTLJS3180PZhttp://onsemi.
com3TYPICALPERFORMANCECURVES(TJ=25°Cunlessotherwisenoted)200.
08481.
251.
751.
00.
750.
510000021VDS,DRAINTOSOURCEVOLTAGE(VOLTS)ID,DRAINCURRENT(AMPS)0VGS,GATETOSOURCEVOLTAGE(VOLTS)Figure1.
OnRegionCharacteristicsFigure2.
TransferCharacteristicsID,DRAINCURRENT(AMPS)2.
04.
008.
0Figure3.
OnResistanceversusDrainCurrentID,DRAINCURRENT(AMPS)Figure4.
OnResistanceversusDrainCurrentandGateVoltageID,DRAINCURRENT(AMPS)RDS(on),DRAINTOSOURCERESISTANCE(W)RDS(on),DRAINTOSOURCERESISTANCE(W)Figure5.
OnResistanceVariationwithTemperatureTJ,JUNCTIONTEMPERATURE(°C)Figure6.
DraintoSourceLeakageCurrentversusVoltageVDS,DRAINTOSOURCEVOLTAGE(VOLTS)RDS(on),DRAINTOSOURCERESISTANCE(NORMALIZED)IDSS,LEAKAGE(nA)145050250257512510010124324VDS≥5VTJ=25°CTJ=55°CTJ=125°CVGS=1.
8VVGS=0VID=3AVGS=4.
5V60.
05TJ=125°CTJ=150°C401.
5TJ=25°C20VGS=2.
2Vto5V2.
0V3100048080.
010.
02TJ=25°C1501000002.
51.
4V1.
8V1.
2VTJ=25°CVGS=4.
5VTJ=55°CTJ=125°C0.
04VGS=4.
5VVGS=2.
5V81620.
56.
010125121.
6V1.
0V2610140.
10.
0661000.
040.
030.
021.
5NTLJS3180PZhttp://onsemi.
com4TYPICALPERFORMANCECURVES(TJ=25°Cunlessotherwisenoted)1051520GATETOSOURCEORDRAINTOSOURCEVOLTAGE(VOLTS)C,CAPACITANCE(pF)Figure7.
CapacitanceVariation14000VGSVDS1600600010VDS=VGS=0VTJ=25°CCossCrss20002200CissFigure8.
GateToSourceandDrainToSourceVoltageversusTotalChargeFigure9.
ResistiveSwitchingTimeVariationversusGateResistanceRG,GATERESISTANCE(OHMS)11010010001t,TIME(ns)100trtd(off)td(on)tf10VDD=10VID=3.
0AVGS=4.
5V00VSD,SOURCETODRAINVOLTAGE(VOLTS)VGS=0VFigure10.
DiodeForwardVoltageversusCurrent1.
010.
62Figure11.
MaximumRatedForwardBiasedSafeOperatingArea0.
11100VDS,DRAINTOSOURCEVOLTAGE(VOLTS)1100RDS(on)LIMITTHERMALLIMITPACKAGELIMIT1010VGS=20VSINGLEPULSETC=25°C1ms100ms10msdcTJ=25°C0.
10.
01-VGS,GATE-TO-SOURCEVOLTAGE(VOLTS)030QG,TOTALGATECHARGE(nC)54510ID=3.
0ATJ=25°CVGSQGSQGDQT211530.
80.
40.
2ID,DRAINCURRENT(AMPS)IS,SOURCECURRENT(AMPS)1000400180012008002005NTLJS3180PZhttp://onsemi.
com5TYPICALPERFORMANCECURVES(TJ=25°Cunlessotherwisenoted)Figure12.
ThermalResponset,TIME(sec)110000.
10.
20.
02D=0.
50.
050.
01SINGLEPULSEDCURVESAPPLYFORPOWERPULSETRAINSHOWNREADTIMEATt1TJ(pk)TA=P(pk)RqJA(t)P(pk)t1t2DUTYCYCLE,D=t1/t21001000100.
10.
0010.
00010.
0000010.
11001010.
010.
00001EFFECTIVETRANSIENTTHERMALRESISTANCESeeNote2onPage1NTLJS3180PZhttp://onsemi.
com6PACKAGEDIMENSIONSWDFN6CASE506AP01ISSUEBMOUNTINGFOOTPRINT2.
306XPITCHSOLDERMASKDEFINED11.
250.
600.
350.
650.
666X0.
43DIMENSIONS:MILLIMETERS1.
100.
350.
34NOTES:1.
DIMENSIONINGANDTOLERANCINGPERASMEY14.
5M,1994.
2.
CONTROLLINGDIMENSION:MILLIMETERS.
3.
DIMENSIONbAPPLIESTOPLATEDTERMINALANDISMEASUREDBETWEEN0.
15AND0.
20mmFROMTERMINAL.
4.
COPLANARITYAPPLIESTOTHEEXPOSEDPADASWELLASTHETERMINALS.
5.
CENTERTERMINALLEADISOPTIONAL.
TERMINALLEADISCONNECTEDTOTERMINALLEAD#4.
6.
PINS1,2,5AND6ARETIEDTOTHEFLAG.
CASEATINGPLANEDBE0.
10CA3AA12X2X0.
10CDIMAMINMAXMILLIMETERS0.
700.
80A10.
000.
05A30.
20REFb0.
250.
35b10.
65REFDD2EE20.
27REFe0.
15REFKLPINONEREFERENCE0.
08C0.
10C7XA0.
10CNOTE3LeD2E2bB366X1K46X0.
05C4XJJ1A0.
10Cb1B6X0.
05CL2NOTE5L2JJ10.
510.
612.
00BSC1.
001.
202.
00BSC1.
101.
300.
65BSC0.
200.
300.
200.
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