sqykt.178zx.com.cn

SUMMARYNPNTransistorVCEO=20V;RSAT=47m;C=4.
5ASchottkyDiodeVR=40V;VF=500mV(@1A);IC=1ADESCRIPTIONPackagedinthenewinnovative3mmx2mmMLPthiscombinationdualcomprisesanultralowsaturationNPNtransistoranda1ASchottkybarrierdiode.
ThisexcellentcombinationprovidesuserswithhighlyefficientperformanceinapplicationsincludingDC-DCandchargingcircuits.
Userswillalsogainseveralotherkeybenefits:PerformancecapabilityequivalenttomuchlargerpackagesImprovedcircuitefficiency&powerlevelsPCBareaanddeviceplacementsavingsLowerpackageheight(0.
9mmnom)ReducedcomponentcountFEATURESExtremelyLowSaturationVoltage(150mV@1A)HFEcharacterisedupto6AIC=4.
5AContinuousCollectorCurrentExtremelyLowVF,fastswitchingSchottky3mmx2mmMLPAPPLICATIONSDC-DCConvertersMobilePhonesChargingCircuitsMotorcontrolDEVICEMARKINGBS1ZX3CDBS1M832ISSUE3-OCTOBER2007MPPSMiniaturePackagePowerSolutions20VNPNLOWSATURATIONTRANSISTORAND40V,1ASCHOTTKYDIODECOMBINATIONDUAL1CathodeAnodeBCEDEVICEREELTAPEWIDTHQUANTITYPERREELZX3CDBS1M832TA78mm3000ZX3CDBS1M832TC138mm10000ORDERINGINFORMATION3mmx2mmDualDieMLP3mmx2mmDualMLPundersideviewPINOUTZX3CDBS1M832ISSUE3-OCTOBER20072PARAMETERSYMBOLVALUEUNITTransistorCollector-BaseVoltageVCBO40VCollector-EmitterVoltageVCEO20VEmitter-BaseVoltageVEBO7.
5VPeakPulseCurrentICM12AContinuousCollectorCurrent(a)(f)IC4.
5AContinuousCollectorCurrent(b)(f)IC5ABaseCurrentIB1000mAPowerDissipationatTA=25°C(a)(f)LinearDeratingFactorPD1.
512WmW/°CPowerDissipationatTA=25°C(b)(f)LinearDeratingFactorPD2.
4519.
6WmW/°CPowerDissipationatTA=25°C(c)(f)LinearDeratingFactorPD18WmW/°CPowerDissipationatTA=25°C(d)(f)LinearDeratingFactorPD1.
139WmW/°CPowerDissipationatTA=25°C(d)(g)LinearDeratingFactorPD1.
713.
6WmW/°CPowerDissipationatTA=25°C(e)(g)LinearDeratingFactorPD324WmW/°CStorageTemperatureRangeTstg-55to+150°CJunctionTemperatureTj150°CABSOLUTEMAXIMUMRATINGS.
PARAMETERSYMBOLVALUEUNITJunctiontoAmbient(a)(f)RθJA83°C/WJunctiontoAmbient(b)(f)RθJA51°C/WJunctiontoAmbient(c)(f)RθJA125°C/WJunctiontoAmbient(d)(f)RθJA111°C/WJunctiontoAmbient(d)(g)RθJA73.
5°C/WJunctiontoAmbient(e)(g)RθJA41.
7°C/WTHERMALRESISTANCENotes(a)Foradualdevicesurfacemountedon8sqcmsinglesided2ozcopperonFR4PCB,instillairconditionswithallexposedpadsattached.
Thecopperareaissplitdownthecentrelineintotwoseparateareaswithonehalfconnectedtoeachhalfofthedualdevice.
(b)Measuredatt<5secsforadualdevicesurfacemountedon8sqcmsinglesided2ozcopperonFR4PCB,instillairconditionswithallexposedpadsattached.
Thecopperareaissplitdownthecentrelineintotwoseparateareaswithonehalfconnectedtoeachhalfofthedualdevice.
(c)Foradualdevicesurfacemountedon8sqcmsinglesided2ozcopperonFR4PCB,instillairconditionswithminimalleadconnectionsonly.
(d)Foradualdevicesurfacemountedon10sqcmsinglesided1ozcopperonFR4PCB,instillairconditionswithallexposedpadsattachedattached.
Thecopperareaissplitdownthecentrelineintotwoseparateareaswithonehalfconnectedtoeachhalfofthedualdevice.
(e)Foradualdevicesurfacemountedon85sqcmsinglesided2ozcopperonFR4PCB,instillairconditionswithallexposedpadsattachedattached.
Thecopperareaissplitdownthecentrelineintotwoseparateareaswithonehalfconnectedtoeachhalfofthedualdevice.
(f)Foradualdevicewithoneactivedie.
(g)Fordualdevicewith2activedierunningatequalpower.
(h)Repetitiverating-pulsewidthlimitedbymaxjunctiontemperature.
RefertoTransientThermalImpedancegraph.
(i)Theminimumcopperdimensionsrequiredformountingarenosmallerthantheexposedmetalpadsonthebaseofthedeviceasshowninthepackagedimensionsdata.
Thethermalresistanceforadualdevicemountedon1.
5mmthickFR4boardusingminimumcopper1ozweight,1mmwidetracksandonehalfofthedeviceactiveisRth=250°C/WgivingapowerratingofPtot=500mW.
ZX3CDBS1M832ISSUE3-OCTOBER200730.
11100.
010.
111002550751001251500.
00.
51.
01.
52.
02.
53.
03.
51001m10m100m1101001k0204060800.
111010002550751001251501752002250.
11101000.
00.
51.
01.
52.
02.
53.
03.
5Note(a)(f)100us100ms1sVCE(SAT)Limited1msSafeOperatingAreaSinglePulse,Tamb=25°CDC10msICCollectorCurrent(A)VCECollector-EmitterVoltage(V)1ozCuNote(d)(f)1ozCuNote(d)(g)2ozCuNote(a)(f)2ozCuNote(e)(g)DeratingCurveTamb=25°CMaxPowerDissipation(W)Temperature(°C)Note(a)(f)D=0.
2D=0.
5D=0.
1TransientThermalImpedanceSinglePulseD=0.
05ThermalResistance(°C/W)PulseWidth(s)1ozcopperNote(g)1ozcopperNote(f)2ozcopperNote(f)2ozcopperNote(g)ThermalResistancevBoardAreaThermalResistance(°C/W)BoardCuArea(sqcm)1ozcopperNote(g)2ozcopperNote(g)1ozcopperNote(f)2ozcopperNote(f)PowerDissipationvBoardAreaTamb=25°CTjmax=150°CContinuousPDDissipation(W)BoardCuArea(sqcm)TRANSISTORTYPICALCHARACTERISTICSZX3CDBS1M832ISSUE3-OCTOBER20074PARAMETERSYMBOLVALUEUNITSchottkyDiodeContinuousReverseVoltageVR40VForwardVoltage@IF=1000mA(typ)VF425mVForwardCurrentIF1850mAAveragePeakForwardCurrentD=50%IFAV3ANonRepetitiveForwardCurrentt≤100st≤10msIFSM127AAPowerDissipationatTA=25°C(a)(f)LinearDeratingFactorPD1.
212WmW/°CPowerDissipationatTA=25°C(b)(f)LinearDeratingFactorPD220WmW/°CPowerDissipationatTA=25°C(c)(f)LinearDeratingFactorPD0.
88WmW/°CPowerDissipationatTA=25°C(d)(f)LinearDeratingFactorPD0.
99WmW/°CPowerDissipationatTA=25°C(d)(g)LinearDeratingFactorPD1.
3613.
6WmW/°CPowerDissipationatTA=25°C(e)(g)LinearDeratingFactorPD2.
424WmW/°CStorageTemperatureRangeTstg-55to+150°CJunctionTemperatureTj125°CABSOLUTEMAXIMUMRATINGS.
PARAMETERSYMBOLVALUEUNITJunctiontoAmbient(a)(f)RθJA83°C/WJunctiontoAmbient(b)(f)RθJA51°C/WJunctiontoAmbient(c)(f)RθJA125°C/WJunctiontoAmbient(d)(f)RθJA111°C/WJunctiontoAmbient(d)(g)RθJA73.
5°C/WJunctiontoAmbient(e)(g)RθJA41.
7°C/WTHERMALRESISTANCENotes(a)Foradualdevicesurfacemountedon8sqcmsinglesided2ozcopperonFR4PCB,instillairconditionswithallexposedpadsattached.
Thecopperareaissplitdownthecentrelineintotwoseparateareaswithonehalfconnectedtoeachhalfofthedualdevice.
(b)Measuredatt<5secsforadualdevicesurfacemountedon8sqcmsinglesided2ozcopperonFR4PCB,instillairconditionswithallexposedpadsattached.
Thecopperareaissplitdownthecentrelineintotwoseparateareaswithonehalfconnectedtoeachhalfofthedualdevice.
(c)Foradualdevicesurfacemountedon8sqcmsinglesided2ozcopperonFR4PCB,instillairconditionswithminimalleadconnectionsonly.
(d)Foradualdevicesurfacemountedon10sqcmsinglesided1ozcopperonFR4PCB,instillairconditionswithallexposedpadsattachedattached.
Thecopperareaissplitdownthecentrelineintotwoseparateareaswithonehalfconnectedtoeachhalfofthedualdevice.
(e)Foradualdevicesurfacemountedon85sqcmsinglesided2ozcopperonFR4PCB,instillairconditionswithallexposedpadsattachedattached.
Thecopperareaissplitdownthecentrelineintotwoseparateareaswithonehalfconnectedtoeachhalfofthedualdevice.
(f)Foradualdevicewithoneactivedie.
(g)Fordualdevicewith2activedierunningatequalpower.
(h)Repetitiverating-pulsewidthlimitedbymaxjunctiontemperature.
RefertoTransientThermalImpedancegraph.
(i)Theminimumcopperdimensionsrequiredformountingarenosmallerthantheexposedmetalpadsonthebaseofthedeviceasshowninthepackagedimensionsdata.
Thethermalresistanceforadualdevicemountedon1.
5mmthickFR4boardusingminimumcopper1ozweight,1mmwidetracksandonehalfofthedeviceactiveisRth=250°C/WgivingapowerratingofPtot=400mW.
ZX3CDBS1M832ISSUE3-OCTOBER2007502550751001250.
00.
51.
01.
52.
02.
53.
01001m10m100m1101001k0204060800.
111010002550751001251501752002250.
11101000.
00.
51.
01.
52.
02.
53.
01ozCuNote(d)(f)1ozCuNote(d)(g)2ozCuNote(a)(f)2ozCuNote(e)(g)DeratingCurveTamb=25°CMaxPowerDissipation(W)Temperature(°C)Note(a)(f)D=0.
2D=0.
5D=0.
1TransientThermalImpedanceSinglePulseD=0.
05ThermalResistance(°C/W)PulseWidth(s)1ozcopperNote(g)1ozcopperNote(f)2ozcopperNote(f)2ozcopperNote(g)ThermalResistancevBoardAreaThermalResistance(°C/W)BoardCuArea(sqcm)1ozcopperNote(g)2ozcopperNote(g)1ozcopperNote(f)2ozcopperNote(f)PowerDissipationvBoardAreaTamb=25°CTjmax=125°CContinuousPDDissipation(W)BoardCuArea(sqcm)SCHOTTKYTYPICALCHARACTERISTICSZX3CDBS1M832ISSUE3-OCTOBER20076PARAMETERSYMBOLMIN.
TYP.
MAX.
UNITCONDITIONS.
TRANSISTORELECTRICALCHARACTERISTICSCollector-BaseBreakdownVoltageV(BR)CBO40100VIC=100ACollector-EmitterBreakdownVoltageV(BR)CEO2027VIC=10mA*Emitter-BaseBreakdownVoltageV(BR)EBO7.
58.
2VIE=100ACollectorCut-OffCurrentICBO25nAVCB=32VEmitterCut-OffCurrentIEBO25nAVEB=6VCollectorEmitterCut-OffCurrentICES25nAVCES=16VCollector-EmitterSaturationVoltageVCE(sat)89011519021015150135250270mVmVmVmVmVIC=0.
1A,IB=10mA*IC=1A,IB=10mA*IC=2A,IB=50mA*IC=3A,IB=100mA*IC=4.
5A,IB=125mA*Base-EmitterSaturationVoltageVBE(sat)0.
98-1.
05VIC=4.
5A,IB=125mA*Base-EmitterTurn-OnVoltageVBE(on)0.
88-0.
95VIC=4.
5A,VCE=2V*StaticForwardCurrentTransferRatiohFE200300200100400450360180IC=10mA,VCE=2V*IC=0.
2A,VCE=2V*IC=2A,VCE=2V*IC=6A,VCE=2V*TransitionFrequencyfT100140MHzIC=50mA,VCE=10Vf=100MHzOutputCapacitanceCobo2330pFVCB=10V,f=1MHzTurn-OnTimet(on)170nsVCC=10V,IC=3AIB1=IB2=10mATurn-OffTimet(off)400nsSCHOTTKYDIODEELECTRICALCHARACTERISTICSReverseBreakdownVoltageV(BR)R4060VIR=300AForwardVoltageVF240265305355390425495420270290340400450500600—mVmVmVmVmVmVmVmVIF=50mA*IF=100mA*IF=250mA*IF=500mA*IF=750mA*IF=1000mA*IF=1500mA*IF=1000mA,Ta=100°C*ReverseCurrentIR50100AVR=30VDiodeCapacitanceCD25pFf=1MHz,VR=25VReverseRecoveryTimetrr12nsswitchedfromIF=500mAtoIR=500mAMeasuredatIR=50mAELECTRICALCHARACTERISTICS(atTamb=25°Cunlessotherwisestated).
*Measuredunderpulsedconditions.
ZX3CDBS1M832ISSUE3-OCTOBER200771m10m100m1101m10m100m1m10m100m1100.
000.
050.
100.
150.
200.
251m10m100m1100.
00.
20.
40.
60.
81.
01.
21m10m100m1100.
40.
60.
81.
01m10m100m1100.
40.
60.
81.
0090180270360450540630VCE(SAT)vICTamb=25°CIC/IB=100IC/IB=50IC/IB=10VCE(SAT)(V)ICCollectorCurrent(A)VBE(SAT)vICIC/IB=50100°C25°C-55°CVCE(SAT)(V)ICCollectorCurrent(A)hFEvICVCE=2V-55°C25°C100°CNormalisedGainICCollectorCurrent(A)25°CVCE(SAT)vICIC/IB=50100°C-55°CVBE(SAT)(V)ICCollectorCurrent(A)VBE(ON)vICVCE=2V100°C25°C-55°CVBE(ON)(V)ICCollectorCurrent(A)TypicalGain(hFE)TRANSISTORTYPICALCHARACTERISTICSZX3CDBS1M832ISSUE3-OCTOBER20078SCHOTTKYTYPICALCHARACTERISTICSZX3CDBS1M832ISSUE3-OCTOBER20079EuropeZetexGmbHStreitfeldstrae19D-81673MünchenGermanyTelefon:(49)894549490Fax:(49)8945494949europe.
sales@zetex.
comAmericasZetexInc700VeteransMemorialHwyHauppauge,NY11788USATelephone:(1)6313602222Fax:(1)6313608222usa.
sales@zetex.
comAsiaPacificZetex(Asia)Ltd3701-04MetroplazaTower1HingFongRoad,KwaiFongHongKongTelephone:(852)26100611Fax:(852)24250494asia.
sales@zetex.
comCorporateHeadquartersZetexSemiconductorsplcLansdowneRoad,ChaddertonOldham,OL99TYUnitedKingdomTelephone(44)1616224444Fax:(44)1616224446hq@zetex.
comTheseofficesaresupportedbyagentsanddistributorsinmajorcountriesworld-wide.
Thispublicationisissuedtoprovideoutlineinformationonlywhich(unlessagreedbytheCompanyinwriting)maynotbeused,appliedorreproducedforanypurposeorformpartofanyorderorcontractorberegardedasarepresentationrelatingtotheproductsorservicesconcerned.
TheCompanyreservestherighttoalterwithoutnoticethespecification,design,priceorconditionsofsupplyofanyproductorservice.
Forthelatestproductinformation,logontowww.
zetex.
comZetexSemiconductorsplc2004CONTROLLINGDIMENSIONSINMILLIMETRESAPPROX.
CONVERTEDDIMENSIONSININCHESMLP832PACKAGEOUTLINE(3mmx2mmMicroLeadedPackage)DIMMILLIMETRESINCHESDIMMILLIMETRESINCHESMIN.
MAX.
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
A0.
801.
000.
0310.
039e0.
65REF0.
0256BSCA10.
000.
050.
000.
002E2.
00BSC0.
0787BSCA20.
650.
750.
02550.
0295E20.
430.
630.
0170.
0249A30.
150.
250.
0060.
0098E40.
160.
360.
0060.
014b0.
240.
340.
0090.
013L0.
200.
450.
00780.
0157b10.
170.
300.
00660.
0118L20.
1250.
000.
005D3.
00BSC0.
118BSCr0.
075BSC0.
0029BSCD20.
821.
020.
0320.
040012012D31.
011.
210.
03970.
0476MLP832PACKAGEDIMENSIONS