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SUMMARYNPNTransistorVCEO=20V;RSAT=47m;C=4.
5APNPTransistorVCEO=-20V;RSAT=64m;C=-3.
5ADESCRIPTIONPackagedinthenewinnovative3mmx2mmMLP(MicroLeadedPackage),theselowsaturationNPN/PNPcombinationdualtransistorsofferloweronstatelossesmakingthemidealforuseinDC-DCcircuitsandvariousdrivingandpower-managementfunctions.
Userswillalsogainseveralotherkeybenefits:PerformancecapabilityequivalenttomuchlargerpackagesImprovedcircuitefficiency&powerlevelsPCBareaanddeviceplacementsavingsLowerpackageheight(0.
9mmnom)ReducedcomponentcountFEATURESLowEquivalentOnResistanceLowSaturationVoltage(150mVmax@1A--NPN)HFEspecifiedupto6AIC=4.
5AContinuousCollectorCurrent3mmx2mmMLPAPPLICATIONSDC-DCConvertersChargingcircuitsPowerswitchesMotorcontrolDEVICEMARKINGDB2ZXTDB2M832ISSUE2-JUNE2002MPPSMiniaturePackagePowerSolutionsCOMPLEMENTARYDUAL20VLOWSATURATIONTRANSISTOR1B1C1E1DEVICEREELTAPEWIDTHQUANTITYPERREELZXTDB2M832TA78mm3000ZXTDB2M832TC138mm10000ORDERINGINFORMATION3mmx2mmDualDieMLP3mmx2mmDualMLPundersideviewPINOUTB2C2E2ZXTDB2M832ISSUE2-JUNE20022PARAMETERSYMBOLNPNPNPUNITCollector-BaseVoltageVCBO40-25VCollector-EmitterVoltageVCEO20-20VEmitter-BaseVoltageVEBO7.
5-7.
5VPeakPulseCurrentICM12-6AContinuousCollectorCurrent(a)(f)IC4.
5-3.
5AContinuousCollectorCurrent(b)(f)IC5-3.
8ABaseCurrentIB1000mAPowerDissipationatTA=25°C(a)(f)LinearDeratingFactorPD1.
512WmW/°CPowerDissipationatTA=25°C(b)(f)LinearDeratingFactorPD2.
4519.
6WmW/°CPowerDissipationatTA=25°C(c)(f)LinearDeratingFactorPD18WmW/°CPowerDissipationatTA=25°C(d)(f)LinearDeratingFactorPD1.
138WmW/°CPowerDissipationatTA=25°C(d)(g)LinearDeratingFactorPD1.
713.
6WmW/°CPowerDissipationatTA=25°C(e)(g)LinearDeratingFactorPD324WmW/°CStorageTemperatureRangeTstg-55to+150°CJunctionTemperatureTj150°CABSOLUTEMAXIMUMRATINGS.
PARAMETERSYMBOLVALUEUNITJunctiontoAmbient(a)(f)RθJA83.
3°C/WJunctiontoAmbient(b)(f)RθJA51°C/WJunctiontoAmbient(c)(f)RθJA125°C/WJunctiontoAmbient(d)(f)RθJA111°C/WJunctiontoAmbient(d)(g)RθJA73.
5°C/WJunctiontoAmbient(e)(g)RθJA41.
7°C/WTHERMALRESISTANCENotes(a)Foradualdevicesurfacemountedon8sqcmsinglesided2ozcopperonFR4PCB,instillairconditionswithallexposedpadsattached.
Thecopperareaissplitdownthecentrelineintotwoseparateareaswithonehalfconnectedtoeachhalfofthedualdevice.
(b)Measuredatt<5secsforadualdevicesurfacemountedon8sqcmsinglesided2ozcopperonFR4PCB,instillairconditionswithallexposedpadsattached.
Thecopperareaissplitdownthecentrelineintotwoseparateareaswithonehalfconnectedtoeachhalfofthedualdevice.
(c)Foradualdevicesurfacemountedon8sqcmsinglesided2ozcopperonFR4PCB,instillairconditionswithminimalleadconnectionsonly.
(d)Foradualdevicesurfacemountedon10sqcmsinglesided1ozcopperonFR4PCB,instillairconditionswithallexposedpadsattachedattached.
Thecopperareaissplitdownthecentrelineintotwoseparateareaswithonehalfconnectedtoeachhalfofthedualdevice.
(e)Foradualdevicesurfacemountedon85sqcmsinglesided2ozcopperonFR4PCB,instillairconditionswithallexposedpadsattachedattached.
Thecopperareaissplitdownthecentrelineintotwoseparateareaswithonehalfconnectedtoeachhalfofthedualdevice.
(f)Foradualdevicewithoneactivedie.
(g)Fordualdevicewith2activedierunningatequalpower.
(h)Repetitiverating-pulsewidthlimitedbymaxjunctiontemperature.
RefertoTransientThermalImpedancegraph.
(i)Theminimumcopperdimensionsrequiredformountingarenosmallerthantheexposedmetalpadsonthebaseofthedeviceasshowninthepackagedimensionsdata.
Thethermalresistanceforadualdevicemountedon1.
5mmthickFR4boardusingminimumcopper1ozweight,1mmwidetracksandonehalfofthedeviceactiveisRth=250°C/WgivingapowerratingofPtot=500mW.
0.
11100.
010.
1110Note(a)(f)100us100ms1sVCE(SAT)Limited1msPNPSafeOperatingAreaSinglePulse,Tamb=25°CDC10msICCollectorCurrent(A)VCECollector-EmitterVoltage(V)ZXTDB2M832ISSUE2-JUNE200230.
11100.
010.
111002550751001251500.
00.
51.
01.
52.
02.
53.
03.
51001m10m100m1101001k0204060800.
111010002550751001251501752002250.
11101000.
00.
51.
01.
52.
02.
53.
03.
5Note(a)(f)100us100ms1sVCE(SAT)Limited1msNPNSafeOperatingAreaSinglePulse,Tamb=25°CDC10msICCollectorCurrent(A)VCECollector-EmitterVoltage(V)1ozCuNote(d)(f)1ozCuNote(d)(g)2ozCuNote(a)(f)2ozCuNote(e)(g)DeratingCurveTamb=25°CMaxPowerDissipation(W)Temperature(°C)Note(a)(f)D=0.
2D=0.
5D=0.
1TransientThermalImpedanceSinglePulseD=0.
05ThermalResistance(°C/W)PulseWidth(s)1ozcopperNote(g)1ozcopperNote(f)2ozcopperNote(f)2ozcopperNote(g)ThermalResistancevBoardAreaThermalResistance(°C/W)BoardCuArea(sqcm)1ozcopperNote(g)2ozcopperNote(g)1ozcopperNote(f)2ozcopperNote(f)PowerDissipationvBoardAreaTamb=25°CTjmax=150°CContinuousPDDissipation(W)BoardCuArea(sqcm)TYPICALCHARACTERISTICSZXTDB2M832ISSUE2-JUNE20024PARAMETERSYMBOLMIN.
TYP.
MAX.
UNITCONDITIONS.
Collector-BaseBreakdownVoltageV(BR)CBO40100VIC=100ACollector-EmitterBreakdownVoltageV(BR)CEO2027VIC=10mA*Emitter-BaseBreakdownVoltageV(BR)EBO7.
58.
2VIE=100ACollectorCut-OffCurrentICBO25nAVCB=32VEmitterCut-OffCurrentIEBO25nAVEB=6VCollectorEmitterCut-OffCurrentICES25nAVCE=16VCollector-EmitterSaturationVoltageVCE(sat)89011519021015150135250270mVmVmVmVmVIC=0.
1A,IB=10mA*IC=1A,IB=10mA*IC=2A,IB=50mAIC=3A,IB=100mAIC=4.
5A,IB=125mABase-EmitterSaturationVoltageVBE(sat)0.
981.
05VIC=4.
5A,IB=125mA*Base-EmitterTurn-OnVoltageVBE(on)0.
880.
95VIC=4.
5A,VCE=2V*StaticForwardCurrentTransferRatiohFE200300200100400450360180IC=10mA,VCE=2V*IC=0.
2A,VCE=2V*IC=2A,VCE=2V*IC=6A,VCE=2V*TransitionFrequencyfT100140MHzIC=50mA,VCE=10Vf=100MHzOutputCapacitanceCobo2330pFVCB=10V,f=1MHzTurn-OnTimet(on)170nsVCC=10V,IC=3AIB1=IB2=10mATurn-OffTimet(off)400nsNPNTRANSISTORELECTRICALCHARACTERISTICS(atTamb=25°Cunlessotherwisestated).
*Measuredunderpulsedconditions.
ZXTDB2M832ISSUE2-JUNE200251m10m100m1101m10m100m1m10m100m1100.
000.
050.
100.
150.
200.
251m10m100m1100.
00.
20.
40.
60.
81.
01.
21m10m100m1100.
40.
60.
81.
01m10m100m1100.
40.
60.
81.
0090180270360450540630VCE(SAT)vICTamb=25°CIC/IB=100IC/IB=50IC/IB=10VCE(SAT)(V)ICCollectorCurrent(A)VBE(SAT)vICIC/IB=50100°C25°C-55°CVCE(SAT)(V)ICCollectorCurrent(A)hFEvICVCE=2V-55°C25°C100°CNormalisedGainICCollectorCurrent(A)25°CVCE(SAT)vICIC/IB=50100°C-55°CVBE(SAT)(V)ICCollectorCurrent(A)VBE(ON)vICVCE=2V100°C25°C-55°CVBE(ON)(V)ICCollectorCurrent(A)TypicalGain(hFE)NPNCHARACTERISTICSZXTDB2M832ISSUE2-JUNE20026PARAMETERSYMBOLMIN.
TYP.
MAX.
UNITCONDITIONS.
Collector-BaseBreakdownVoltageV(BR)CBO-25-35VIC=-100ACollector-EmitterBreakdownVoltageV(BR)CEO-20-25VIC=-10mA*Emitter-BaseBreakdownVoltageV(BR)EBO-7.
5-8.
5VIE=-100ACollectorCut-OffCurrentICBO-25nAVCB=-20VEmitterCut-OffCurrentIEBO-25nAVEB=-6VCollectorEmitterCut-OffCurrentICES-25nAVCE=-16VCollector-EmitterSaturationVoltageVCE(sat)-19-170-190-240-225-30-220-250-350-300mVmVmVmVmVIC=-0.
1A,IB=-10mA*IC=-1A,IB=-20mA*IC=-1.
5A,IB=-50mA*IC=-2.
5A,IB=-150mA*IC=-3.
5A,IB=-350mA*Base-EmitterSaturationVoltageVBE(sat)-1.
10-1.
075VIC=-3.
5A,IB=-350mA*Base-EmitterTurn-OnVoltageVBE(on)-0.
87-0.
95VIC=-3.
5A,VCE=-2V*StaticForwardCurrentTransferRatiohFE3003001501547545023030IC=-10mA,VCE=-2V*IC=-0.
1A,VCE=-2V*IC=-2A,VCE=-2V*IC=-6A,VCE=-2V*TransitionFrequencyfT150180MHzIC=-50mA,VCE=-10Vf=100MHzOutputCapacitanceCobo2130pFVCB=-10V,f=1MHzTurn-OnTimet(on)40nsVCC=-10V,IC=-1AIB1=IB2=10mATurn-OffTimet(off)670nsPNPTRANSISTORELECTRICALCHARACTERISTICS(atTamb=25°Cunlessotherwisestated).
*Measuredunderpulsedconditions.
ZXTDB2M832ISSUE2-JUNE200271m10m100m11010m100m11m10m100m1100.
000.
050.
100.
150.
200.
251m10m100m1100.
00.
20.
40.
60.
81.
01.
21.
41m10m100m1100.
40.
60.
81.
01m10m100m1100.
20.
40.
60.
81.
0090180270360450540630VCE(SAT)vICTamb=25°CIC/IB=100IC/IB=50IC/IB=10VCE(SAT)(V)ICCollectorCurrent(A)VBE(SAT)vICIC/IB=50100°C25°C-55°CVCE(SAT)(V)ICCollectorCurrent(A)hFEvICVCE=2V-55°C25°C100°CNormalisedGainICCollectorCurrent(A)25°CVCE(SAT)vICIC/IB=50100°C-55°CVBE(SAT)(V)ICCollectorCurrent(A)VBE(ON)vICVCE=2V100°C25°C-55°CVBE(ON)(V)ICCollectorCurrent(A)TypicalGain(hFE)PNPCHARACTERISTICSZXTDB2M8328ISSUE2-JUNE2002EuropeZetexplcFieldsNewRoadChaddertonOldham,OL98NPUnitedKingdomTelephone(44)1616224422Fax:(44)1616224420uksales@zetex.
comZetexGmbHStreitfeldstrae19D-81673MünchenGermanyTelefon:(49)894549490Fax:(49)8945494949europe.
sales@zetex.
comAmericasZetexInc700VeteransMemorialHwyHauppauge,NY11788USATelephone:(631)3602222Fax:(631)3608222usa.
sales@zetex.
comAsiaPacificZetex(Asia)Ltd3701-04Metroplaza,Tower1HingFongRoadKwaiFongHongKongTelephone:(852)26100611Fax:(852)24250494asia.
sales@zetex.
comTheseofficesaresupportedbyagentsanddistributorsinmajorcountriesworld-wide.
Thispublicationisissuedtoprovideoutlineinformationonlywhich(unlessagreedbytheCompanyinwriting)maynotbeused,appliedorreproducedforanypurposeorformpartofanyorderorcontractorberegardedasarepresentationrelatingtotheproductsorservicesconcerned.
TheCompanyreservestherighttoalterwithoutnoticethespecification,design,priceorconditionsofsupplyofanyproductorservice.
Forthelatestproductinformation,logontowww.
zetex.
comZetexplc2002CONTROLLINGDIMENSIONSINMILLIMETRESAPPROX.
CONVERTEDDIMENSIONSININCHESMLP832PACKAGEOUTLINE(3mmx2mmMicroLeadedPackage)DIMMILLIMETRESINCHESDIMMILLIMETRESINCHESMIN.
MAX.
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
A0.
801.
000.
0310.
039e0.
65REF0.
0256BSCA10.
000.
050.
000.
002E2.
00BSC0.
0787BSCA20.
650.
750.
02550.
0295E20.
430.
630.
0170.
0249A30.
150.
250.
0060.
0098E40.
160.
360.
0060.
014b0.
240.
340.
0090.
013L0.
200.
450.
00780.
0157b10.
170.
300.
00660.
0118L20.
1250.
000.
005D3.
00BSC0.
118BSCr0.
075BSC0.
0029BSCD20.
821.
020.
0320.
040012012D31.
011.
210.
03970.
0476MLP832PACKAGEDIMENSIONS
5APNPTransistorVCEO=-20V;RSAT=64m;C=-3.
5ADESCRIPTIONPackagedinthenewinnovative3mmx2mmMLP(MicroLeadedPackage),theselowsaturationNPN/PNPcombinationdualtransistorsofferloweronstatelossesmakingthemidealforuseinDC-DCcircuitsandvariousdrivingandpower-managementfunctions.
Userswillalsogainseveralotherkeybenefits:PerformancecapabilityequivalenttomuchlargerpackagesImprovedcircuitefficiency&powerlevelsPCBareaanddeviceplacementsavingsLowerpackageheight(0.
9mmnom)ReducedcomponentcountFEATURESLowEquivalentOnResistanceLowSaturationVoltage(150mVmax@1A--NPN)HFEspecifiedupto6AIC=4.
5AContinuousCollectorCurrent3mmx2mmMLPAPPLICATIONSDC-DCConvertersChargingcircuitsPowerswitchesMotorcontrolDEVICEMARKINGDB2ZXTDB2M832ISSUE2-JUNE2002MPPSMiniaturePackagePowerSolutionsCOMPLEMENTARYDUAL20VLOWSATURATIONTRANSISTOR1B1C1E1DEVICEREELTAPEWIDTHQUANTITYPERREELZXTDB2M832TA78mm3000ZXTDB2M832TC138mm10000ORDERINGINFORMATION3mmx2mmDualDieMLP3mmx2mmDualMLPundersideviewPINOUTB2C2E2ZXTDB2M832ISSUE2-JUNE20022PARAMETERSYMBOLNPNPNPUNITCollector-BaseVoltageVCBO40-25VCollector-EmitterVoltageVCEO20-20VEmitter-BaseVoltageVEBO7.
5-7.
5VPeakPulseCurrentICM12-6AContinuousCollectorCurrent(a)(f)IC4.
5-3.
5AContinuousCollectorCurrent(b)(f)IC5-3.
8ABaseCurrentIB1000mAPowerDissipationatTA=25°C(a)(f)LinearDeratingFactorPD1.
512WmW/°CPowerDissipationatTA=25°C(b)(f)LinearDeratingFactorPD2.
4519.
6WmW/°CPowerDissipationatTA=25°C(c)(f)LinearDeratingFactorPD18WmW/°CPowerDissipationatTA=25°C(d)(f)LinearDeratingFactorPD1.
138WmW/°CPowerDissipationatTA=25°C(d)(g)LinearDeratingFactorPD1.
713.
6WmW/°CPowerDissipationatTA=25°C(e)(g)LinearDeratingFactorPD324WmW/°CStorageTemperatureRangeTstg-55to+150°CJunctionTemperatureTj150°CABSOLUTEMAXIMUMRATINGS.
PARAMETERSYMBOLVALUEUNITJunctiontoAmbient(a)(f)RθJA83.
3°C/WJunctiontoAmbient(b)(f)RθJA51°C/WJunctiontoAmbient(c)(f)RθJA125°C/WJunctiontoAmbient(d)(f)RθJA111°C/WJunctiontoAmbient(d)(g)RθJA73.
5°C/WJunctiontoAmbient(e)(g)RθJA41.
7°C/WTHERMALRESISTANCENotes(a)Foradualdevicesurfacemountedon8sqcmsinglesided2ozcopperonFR4PCB,instillairconditionswithallexposedpadsattached.
Thecopperareaissplitdownthecentrelineintotwoseparateareaswithonehalfconnectedtoeachhalfofthedualdevice.
(b)Measuredatt<5secsforadualdevicesurfacemountedon8sqcmsinglesided2ozcopperonFR4PCB,instillairconditionswithallexposedpadsattached.
Thecopperareaissplitdownthecentrelineintotwoseparateareaswithonehalfconnectedtoeachhalfofthedualdevice.
(c)Foradualdevicesurfacemountedon8sqcmsinglesided2ozcopperonFR4PCB,instillairconditionswithminimalleadconnectionsonly.
(d)Foradualdevicesurfacemountedon10sqcmsinglesided1ozcopperonFR4PCB,instillairconditionswithallexposedpadsattachedattached.
Thecopperareaissplitdownthecentrelineintotwoseparateareaswithonehalfconnectedtoeachhalfofthedualdevice.
(e)Foradualdevicesurfacemountedon85sqcmsinglesided2ozcopperonFR4PCB,instillairconditionswithallexposedpadsattachedattached.
Thecopperareaissplitdownthecentrelineintotwoseparateareaswithonehalfconnectedtoeachhalfofthedualdevice.
(f)Foradualdevicewithoneactivedie.
(g)Fordualdevicewith2activedierunningatequalpower.
(h)Repetitiverating-pulsewidthlimitedbymaxjunctiontemperature.
RefertoTransientThermalImpedancegraph.
(i)Theminimumcopperdimensionsrequiredformountingarenosmallerthantheexposedmetalpadsonthebaseofthedeviceasshowninthepackagedimensionsdata.
Thethermalresistanceforadualdevicemountedon1.
5mmthickFR4boardusingminimumcopper1ozweight,1mmwidetracksandonehalfofthedeviceactiveisRth=250°C/WgivingapowerratingofPtot=500mW.
0.
11100.
010.
1110Note(a)(f)100us100ms1sVCE(SAT)Limited1msPNPSafeOperatingAreaSinglePulse,Tamb=25°CDC10msICCollectorCurrent(A)VCECollector-EmitterVoltage(V)ZXTDB2M832ISSUE2-JUNE200230.
11100.
010.
111002550751001251500.
00.
51.
01.
52.
02.
53.
03.
51001m10m100m1101001k0204060800.
111010002550751001251501752002250.
11101000.
00.
51.
01.
52.
02.
53.
03.
5Note(a)(f)100us100ms1sVCE(SAT)Limited1msNPNSafeOperatingAreaSinglePulse,Tamb=25°CDC10msICCollectorCurrent(A)VCECollector-EmitterVoltage(V)1ozCuNote(d)(f)1ozCuNote(d)(g)2ozCuNote(a)(f)2ozCuNote(e)(g)DeratingCurveTamb=25°CMaxPowerDissipation(W)Temperature(°C)Note(a)(f)D=0.
2D=0.
5D=0.
1TransientThermalImpedanceSinglePulseD=0.
05ThermalResistance(°C/W)PulseWidth(s)1ozcopperNote(g)1ozcopperNote(f)2ozcopperNote(f)2ozcopperNote(g)ThermalResistancevBoardAreaThermalResistance(°C/W)BoardCuArea(sqcm)1ozcopperNote(g)2ozcopperNote(g)1ozcopperNote(f)2ozcopperNote(f)PowerDissipationvBoardAreaTamb=25°CTjmax=150°CContinuousPDDissipation(W)BoardCuArea(sqcm)TYPICALCHARACTERISTICSZXTDB2M832ISSUE2-JUNE20024PARAMETERSYMBOLMIN.
TYP.
MAX.
UNITCONDITIONS.
Collector-BaseBreakdownVoltageV(BR)CBO40100VIC=100ACollector-EmitterBreakdownVoltageV(BR)CEO2027VIC=10mA*Emitter-BaseBreakdownVoltageV(BR)EBO7.
58.
2VIE=100ACollectorCut-OffCurrentICBO25nAVCB=32VEmitterCut-OffCurrentIEBO25nAVEB=6VCollectorEmitterCut-OffCurrentICES25nAVCE=16VCollector-EmitterSaturationVoltageVCE(sat)89011519021015150135250270mVmVmVmVmVIC=0.
1A,IB=10mA*IC=1A,IB=10mA*IC=2A,IB=50mAIC=3A,IB=100mAIC=4.
5A,IB=125mABase-EmitterSaturationVoltageVBE(sat)0.
981.
05VIC=4.
5A,IB=125mA*Base-EmitterTurn-OnVoltageVBE(on)0.
880.
95VIC=4.
5A,VCE=2V*StaticForwardCurrentTransferRatiohFE200300200100400450360180IC=10mA,VCE=2V*IC=0.
2A,VCE=2V*IC=2A,VCE=2V*IC=6A,VCE=2V*TransitionFrequencyfT100140MHzIC=50mA,VCE=10Vf=100MHzOutputCapacitanceCobo2330pFVCB=10V,f=1MHzTurn-OnTimet(on)170nsVCC=10V,IC=3AIB1=IB2=10mATurn-OffTimet(off)400nsNPNTRANSISTORELECTRICALCHARACTERISTICS(atTamb=25°Cunlessotherwisestated).
*Measuredunderpulsedconditions.
ZXTDB2M832ISSUE2-JUNE200251m10m100m1101m10m100m1m10m100m1100.
000.
050.
100.
150.
200.
251m10m100m1100.
00.
20.
40.
60.
81.
01.
21m10m100m1100.
40.
60.
81.
01m10m100m1100.
40.
60.
81.
0090180270360450540630VCE(SAT)vICTamb=25°CIC/IB=100IC/IB=50IC/IB=10VCE(SAT)(V)ICCollectorCurrent(A)VBE(SAT)vICIC/IB=50100°C25°C-55°CVCE(SAT)(V)ICCollectorCurrent(A)hFEvICVCE=2V-55°C25°C100°CNormalisedGainICCollectorCurrent(A)25°CVCE(SAT)vICIC/IB=50100°C-55°CVBE(SAT)(V)ICCollectorCurrent(A)VBE(ON)vICVCE=2V100°C25°C-55°CVBE(ON)(V)ICCollectorCurrent(A)TypicalGain(hFE)NPNCHARACTERISTICSZXTDB2M832ISSUE2-JUNE20026PARAMETERSYMBOLMIN.
TYP.
MAX.
UNITCONDITIONS.
Collector-BaseBreakdownVoltageV(BR)CBO-25-35VIC=-100ACollector-EmitterBreakdownVoltageV(BR)CEO-20-25VIC=-10mA*Emitter-BaseBreakdownVoltageV(BR)EBO-7.
5-8.
5VIE=-100ACollectorCut-OffCurrentICBO-25nAVCB=-20VEmitterCut-OffCurrentIEBO-25nAVEB=-6VCollectorEmitterCut-OffCurrentICES-25nAVCE=-16VCollector-EmitterSaturationVoltageVCE(sat)-19-170-190-240-225-30-220-250-350-300mVmVmVmVmVIC=-0.
1A,IB=-10mA*IC=-1A,IB=-20mA*IC=-1.
5A,IB=-50mA*IC=-2.
5A,IB=-150mA*IC=-3.
5A,IB=-350mA*Base-EmitterSaturationVoltageVBE(sat)-1.
10-1.
075VIC=-3.
5A,IB=-350mA*Base-EmitterTurn-OnVoltageVBE(on)-0.
87-0.
95VIC=-3.
5A,VCE=-2V*StaticForwardCurrentTransferRatiohFE3003001501547545023030IC=-10mA,VCE=-2V*IC=-0.
1A,VCE=-2V*IC=-2A,VCE=-2V*IC=-6A,VCE=-2V*TransitionFrequencyfT150180MHzIC=-50mA,VCE=-10Vf=100MHzOutputCapacitanceCobo2130pFVCB=-10V,f=1MHzTurn-OnTimet(on)40nsVCC=-10V,IC=-1AIB1=IB2=10mATurn-OffTimet(off)670nsPNPTRANSISTORELECTRICALCHARACTERISTICS(atTamb=25°Cunlessotherwisestated).
*Measuredunderpulsedconditions.
ZXTDB2M832ISSUE2-JUNE200271m10m100m11010m100m11m10m100m1100.
000.
050.
100.
150.
200.
251m10m100m1100.
00.
20.
40.
60.
81.
01.
21.
41m10m100m1100.
40.
60.
81.
01m10m100m1100.
20.
40.
60.
81.
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comZetexGmbHStreitfeldstrae19D-81673MünchenGermanyTelefon:(49)894549490Fax:(49)8945494949europe.
sales@zetex.
comAmericasZetexInc700VeteransMemorialHwyHauppauge,NY11788USATelephone:(631)3602222Fax:(631)3608222usa.
sales@zetex.
comAsiaPacificZetex(Asia)Ltd3701-04Metroplaza,Tower1HingFongRoadKwaiFongHongKongTelephone:(852)26100611Fax:(852)24250494asia.
sales@zetex.
comTheseofficesaresupportedbyagentsanddistributorsinmajorcountriesworld-wide.
Thispublicationisissuedtoprovideoutlineinformationonlywhich(unlessagreedbytheCompanyinwriting)maynotbeused,appliedorreproducedforanypurposeorformpartofanyorderorcontractorberegardedasarepresentationrelatingtotheproductsorservicesconcerned.
TheCompanyreservestherighttoalterwithoutnoticethespecification,design,priceorconditionsofsupplyofanyproductorservice.
Forthelatestproductinformation,logontowww.
zetex.
comZetexplc2002CONTROLLINGDIMENSIONSINMILLIMETRESAPPROX.
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