cellsssd

1SamsungPM1725aNVMeSSDExceptionallyfastspeedsandultra-lowlatencyforenterpriseapplicationBrochure2ExtremeperformancefromanSSDtechnologyleaderMaximizedatatransferwiththehigh-performance,reliablePM1725aEnterpriseenvironmentshaveuniquerequirementstoensurethattheyoperateoptimally24/7,365daysayear.
Avariedlevelofperformancewithlowlatencyisessential.
Itisalsocriticalthattheseenvironmentsremainstablewhenprocessingvariousreadandwriteworkloads.
Andthemostcrucialcriteriaofallareprotectionfromdatacorruptionorlossduetounexpectedpoweroutages.
Consideringeachofthesefactors,ITanddatacentermanagersaretaskedwithfindinghighperforming,dependablememorysolutions.
Samsungiswell-equippedtoofferenterpriseenvironmentssuperbSSDs.
Thedrivesdeliverexceptionalperformanceinmultithreadapplications,suchascomputeandvirtualization,relationaldatabases,andstorage.
Thesehigh-performingSSDsalsoprovideoutstandingreliabilityforcontinualoperationregardlessofunanticipatedpowerloss.
Theirreliabilityalsoextendstonon-interruptserviceincaseafailureoccursononeofthepathstoaport.
Usingitsprovenexpertiseandwealthofexperienceincutting-edgeSSDtechnology,Samsungmemorysolutionshelpsdatacentersoperatecontinuallyatthehighestperformancelevels.
SamsunghastheaddedadvantageofbeingthesolemanufacturerofallofitsSSDcomponents.
Thisadvantagehelpsensureend-to-endintegration,qualityassuranceandtheutmostcompatibility.
SamsungPM1725aNVMeSSDdelivers:Exceptionalvalue:ThePM1725autilizesSamsungV-NANDflashmemory,whichfeaturesauniquedesignthatstacks48layersontopofanother.
Italsoemployscost-effectiveTLC(triple-levelcell)flashmemory,whichdelivershigherreliabilitythanMLC(multi-levelcell)planarNANDflashmemorySSDs.
Withthisarchitecture,thePM1725acandeliverenterprise-levelperformanceeconomically.
Consistentlyhighperformance:ThePM1725aHHHL(half-height,half-length)carddeliversawidebandwidthofupto6,400/3,000MB/ssequentialR/Wspeedsrespectively,usingunder23Wofpower.
Itdeliversupto1,080Kand170KIOPSforrandom4KBreadandwrite,respectively.
ThePM1725a2.
5-inchSSDdeliversabandwidthofupto3,300/2,950MB/sforsequentialR/Wandupto800K/160KIOPSforrandom4KBR/W,respectively.
ThePM1725adeliversQoS(qualityofservice,99%)of95μsforrandom4KBreadsand60μsforrandom4KBwrites.
Outstandingreliability:EventhoughthePM1725aemploysaTLCV-NANDflashmemory,itboasts5DWPD(drivewritesperday)for5years.
Thisratetranslatestowritingatotalof32TBeachdayduringthattime,whichmeansuserscanwrite6,400filesof5GB-equivalentdataeveryday.
Thislevelofreliabilityismorethansufficientforenterprisestoragesystemsthathavetoperformultrafasttransmissionsoflargeamountsofdata.
Highdensity:ByfittingmorememorycellsinlessspaceinaV-NANDchip,itprovidessignificantlymorecapacitiesofupto6.
4TBinboththePM1725a2.
5-inchandHHHLcardSSDs.
Dependingonyourstoragerequirementsandapplications,800GB,1.
6TB,3.
2TBand6.
4TBcapacitiesareavailable.
OptimizedforenterpriseenvironmentsTheSamsungPM1725aSSDisoptimizedtoexcelinvirtuallyanydatacenterscenario.
Thisenterprise-level,ultra-highperformanceSSDprovidesunsurpassedrandomreadperformanceandisparticularlysuitableforread-intensivedatacenterapplications.
WhencomparedwithotherstandardizedSamsungSSDs,thePM1725aSSDprovidesthehighestrandomreadIOPSperformance.
ThePM1725aisequippedwithSamsung3rd-generationTLCV-NANDtechnology.
ThistechnologyeliminatesperformanceandreliabilityissuesthatresultfromcapacitylimitationsfoundinplanarNANDtechnologies.
TheSamsungV-NANDtechnologydeliversreliableandconsistentperformanceatlowercostsfortoday'sdemandingdata-centricworld.
SuperbperformanceoverSASSSDsThePM1725ausesastate-of-the-artNVMeinterfacetoovercomebottlenecksexperiencedinSAS(serial-attachedSCSI)andSATAinterfaces.
Furthermore,thePM1725aemploysthehighestdensitytosuccessfullyprocessintensiveandheavyenterpriseworkloads.
3ThefollowingfigurescomparetheperformanceofaSamsungenterpriseSASSSD,whichusesMLCV-NANDflashmemory,withtheTLC-basedPM1725a.
Withcomparablecost,thePM1725aprovidesupto4.
3timesmorebandwidththantheMLC-basedSASSSDforsequentialreadandupto5timesmoreIOPSfor4KBrandomread.
[MB/s][IOPS]SequentialreadSustainedrandomreadSASSSD1.
6TB(MLC)PM1725a1.
6TB(TLC)PM1725a3.
2TB(TLC)SequentialwriteSustainedrandomwrite1400200K50K20006400Figure1.
SequentialR/WperformancecomparisonbetweenanMLCSASSSDandthe1.
6and3.
2TBTLCPM1725aFigure2.
SustainedrandomR/WperformancecomparisonbetweenanMLCSASSSDandthe1.
6and3.
2TBPM1725aEnterprise-gradepower-lossprotectionDuringnormalpower-offperiods,thehostserverallocatestimetomaintaindataintegritybytransmittingstandbycommandstoeachdevice.
Intheeventofanunexpectedpowerloss,though,theSSDimmediatelyusesthestoredenergyfromtantalumcapacitorstoprovideenoughtimetotransferthecacheddatainDRAMtotheflashmemory.
Thisprocesshelpsensurenolossofdata.
Powerlosscanoccurwithpoweroutagesorwhenusersunplugdevicesfromthesystem.
However,thePM1725aNVMeSSDhasbeendesignedtopreventdatalosswithitsPLP(power-lossprotection)architecture.
Intheeventofsuddenpowerofforpowerfailure,thePLPsolutioncanhelpensurethatdataissuedbythehostsystemiswrittentothestoragemediatoreducetheriskoflossofdata.
SamsungPM1725aputsanendtoperformanceandefficiencybottlenecks6000140030001000K1080K120K170K4.
3X5.
0X1.
4X2.
4X4RemotehealthmonitoringThePM1725aprovidesaremotehealth-monitoringfeaturebytheSamsungSSDToolkit.
TheSamsungSSDToolkitisproprietarysoftwaredesignedtohelpuserswitheasy-to-useSSDmanagementanddiagnosticfeaturesforserveranddatacenterusage.
TheCLI(commandlineinterface)toolcurrentlysupportsSamsungdatacenterandenterpriseNVMeSSDsandsupportsLinux.
TheSamsungSSDToolkitisavailablefromtheSamsungSSDwebsite.
Remotehealthmonitoringfeatures:Healthmonitoring:Providesvitaldrivestatusinformationandsupportsuserstoupdatefirmware,measuredriveperformance,initializedrives,calculatedrivelifetimeandmore.
RemotehealthmonitoringforFA(failureanalysis):Providesasmartwayforresolvingfieldissuesbytheremotehealthmonitoringfeature.
Thiswayofissuehandlingreducesturnaroundtimecomparedtothetraditionalwayofhandlingtheissue,suchasdispatchinganengineer,andprovidesquickerresolution.
Thecustomercangettheinitialresolutionintwosteps:firstbyrunningtheSSDToolkitandsecondbysendingthedebuginformationbacktoSamsungandgettingtheresolutioneffectively.
Dual-portcapabilityITanddatacentermanagersneedfeaturesthatcanprovideaccesstostoragedatawithoutinterruptions.
Samsunghastakenthisneedintoconsiderationbyincludingakeyfeaturethatprovidesaccessbysmartlyusingdual-portPCIe(PCIExpress)SSDstogetthemostoutofhighavailability.
SamsunghasenabledthisfeatureinthePM1725a2.
5-inchdrives,whichprovidestheabilitytocreatetwofaultdomainsandincreasesavailability,providingnon-interruptserviceforaccessingstoragedata.
Evenifafailureoccursinoneofthepathstoaport,preventingaccessalongthatpath,thedeviceisstillaccessibleusingthesecondport.
ThePM1725aprovidesvirtuallynon-stopservicewiththisdual-portfeaturesupport.
PM1725aempowersthehighestdensitytosuccessfullyprocessintensiveprovidingnon-interruptserviceMulti-namespaceThePM1725asupportsmultiplenamespaces,whereasingleSSDcanbepartitionedintomultiplehardwarepartitions.
Anamespacecanbeassignedtomultiplehostsordedicatedtoasinglehost.
ThePM1725asupportsupto32multiplenamespaces.
AboutSamsungElectronicsCo.
,Ltd.
Samsunginspirestheworldandshapesthefuturewithtransformativeideasandtechnologies.
ThecompanyisredefiningtheworldsofTVs,smartphones,wearabledevices,tablets,digitalappliances,networksystems,andmemory,systemLSIandLEDsolutions.
Forthelatestnews,pleasevisittheSamsungNewsroomatnews.
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com.
Copyright2017SamsungElectronicsCo.
,Ltd.
Allrightsreserved.
SamsungisaregisteredtrademarkofSamsungElectronicsCo.
,Ltd.
Specificationsanddesignsaresubjecttochangewithoutnotice.
Nonmetricweightsandmeasurementsareapproximate.
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Samsungisnotliableforerrorsoromissions.
Allbrand,product,servicenamesandlogosaretrademarksand/orregisteredtrademarksoftheirrespectiveownersandareherebyrecognizedandacknowledged.
CentOSisatrademarkofRedHat,Inc.
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SamsungElectronicsCo.
,Ltd.
129Samsung-ro,Yeongtong-gu,Suwon-si,Gyeonggi-do16677,Koreawww.
samsung.
com2017-08SamsungPM1725aFormfactor2.
5inchHHHLCapacity1800GB,1.
6TB,3.
2TB,6.
4TB1.
6TB,3.
2TB,6.
4TBHostinterfacePCIExpressGen3x4PCIExpressGen3x8SpeccompliancePCIExpressbasespecificationrev.
3.
0,NVMExpressspecrev.
1.
2,enterpriseSSDformfactorver.
1.
0aNANDflashmemorySamsungV-NANDMTBF2,000,000hoursUBER1sectorper1017bitsreadPowerconsumption2Active:23Watt,Idle:7.
7WattEndurance5DWPDfor5yearsSequentialread3Upto3,300MB/sUpto6,400MB/sSequentialwriteUpto2,950MB/sUpto3,000MB/sRandomreadUpto800,000IOPSUpto1,080,000IOPSRandomwriteUpto160,000IOPSUpto170,000IOPSLatency,read/write490/20sQualityofService,read/write(99%)595/60sPhysicaldimensions69.
85x100.
20x14.
80mm69.
90x167.
65x18.
71mmWeightUpto190gramsUpto330grams1.
1MB=1,000,000Bytes,1GB=1,000,000,000Bytes,1TB=1,000,000,000,000Bytes,unformattedcapacity.
2.
ActivepowerismeasuredusingIOMeter-2006onMicrosoftWindowsWinServer2012R2.
3.
BasedonPCIExpressGen3x4for2.
5-inchandPCIExpressGen3x8forHHHLcardSSD.
RandomperformancemeasuredusingFioinCentOS7.
0withqueuedepth32by16workersandsequentialperformancewithqueuedepth32by16workers.
Actualperformancemayvarydependingonuseconditionsandenvironment.
4.
ThereadlatencyismeasuredbyusingFioinCentOS7.
0and4KBtransfersizewithqueuedepth1onarandomworkloadofsustainedstate.
ThewritelatencyismeasuredbyusingFioinCentOS7.
0and4KBtransfersizewithqueuedepth1onasequentialworkloadofsustainedstate.
5.
QoSismeasuredusingFIO(99%)withqueuedepth1on4KBrandomreadandwrite.
TechnicalspecificationsFormoreinformationFormoreinformationabouttheSamsungPM1725aNVMeSSD,visitwww.
samsung.
com/semiconductor.