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BT138Y-600E4QTriac15September2018Productdatasheet1.
GeneraldescriptionPlanarpassivatedsensitivegatefourquadranttriacinaninternallyinsulatedSOT78D(TO-220AB)plasticpackageintendedforuseingeneralpurposebidirectionalswitchingandphasecontrolapplications.
Thissensitivegate"seriesE"triaccanbeinterfaceddirectlytomicrocontrollers,logicintegratedcircuitsandotherlowpowergatetriggercircuits.
Theinternallyinsulatedmountingbasegivesgoodthermalperformancecombinedwitheaseofhandlingandassemblybytheuser.
2.
Featuresandbenefits2500VRMSisolationvoltagecapabilityDirectinterfacingtologiclevelICsDirectinterfacingtolowpowergatedriversandmicrocontrollersHighblockingvoltagecapabilityIndustrystandardTO-220packageforeaseofhandlingIsolatedmountingbasePlanarpassivatedforvoltageruggednessandreliabilitySensitivegateTriggeringinallfourquadrants3.
Applications230VlampdimmersGeneralpurposeswitchingandphasecontrol4.
QuickreferencedataTable1.
QuickreferencedataSymbolParameterConditionsMinTypMaxUnitVDRMrepetitivepeakoff-statevoltage--600VIT(RMS)RMSon-statecurrentfullsinewave;Tmb≤85°C;Fig.
1;Fig.
2;Fig.
3--12Afullsinewave;Tj(init)=25°C;tp=20ms;Fig.
4;Fig.
5--95AITSMnon-repetitivepeakon-statecurrentfullsinewave;Tj(init)=25°C;tp=16.
7ms--105ATjjunctiontemperature--125°CStaticcharacteristicsIGTgatetriggercurrentVD=12V;IT=0.
1A;T2+G+;Tj=25°C;Fig.
7--10mAWeEnSemiconductorsBT138Y-600E4QTriacBT138Y-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet15September20182/13SymbolParameterConditionsMinTypMaxUnitVD=12V;IT=0.
1A;T2+G-;Tj=25°C;Fig.
7--10mAVD=12V;IT=0.
1A;T2-G+;Tj=25°C;Fig.
7--10mAVD=12V;IT=0.
1A;T2-G-;Tj=25°C;Fig.
7--25mAIHholdingcurrentVD=12V;Tj=25°C;Fig.
9--30mAVTon-statevoltageIT=15A;Tj=25°C;Fig.
10-1.
41.
65VDynamiccharacteristicsdVD/dtrateofriseofoff-statevoltageVDM=402V;Tj=125°C;(VDM=67%ofVDRM);exponentialwaveform;gateopencircuit-50-V/s5.
PinninginformationTable2.
PinninginformationPinSymbolDescriptionSimplifiedoutlineGraphicsymbol1T1mainterminal12T2mainterminal23Ggatembn.
c.
mountingbase;isolated12mb3TO-220AB(SOT78D)sym051T1GT26.
OrderinginformationTable3.
OrderinginformationPackageTypenumberNameDescriptionVersionBT138Y-600ETO-220ABplasticsingle-endedpackage;isolatedheatsinkmounted;1mountinghole;3-leadTO-220SOT78DWeEnSemiconductorsBT138Y-600E4QTriacBT138Y-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet15September20183/137.
LimitingvaluesTable4.
LimitingvaluesInaccordancewiththeAbsoluteMaximumRatingSystem(IEC60134).
SymbolParameterConditionsMinMaxUnitVDRMrepetitivepeakoff-statevoltage-600VIT(RMS)RMSon-statecurrentfullsinewave;Tmb≤85°C;Fig.
1;Fig.
2;Fig.
3-12Afullsinewave;Tj(init)=25°C;tp=20ms;Fig.
4;Fig.
5-95AITSMnon-repetitivepeakon-statecurrentfullsinewave;Tj(init)=25°C;tp=16.
7ms-105AI2tI2tforfusingtp=10ms;SIN-45As-50A/sIG=100mA;T2+G+-50A/sIG=100mA;T2-G--50A/sdIT/dtrateofriseofon-statecurrentIG=100mA;T2-G+-10A/sIGMpeakgatecurrent-2APGMpeakgatepower-5WPG(AV)averagegatepoweroverany20msperiod-0.
5WTstgstoragetemperature-40150°CTjjunctiontemperature-125°C003aac230010203010-210-1110surgeduration(s)IT(RMS)(A)f=50Hz;Tmb=85°CFig.
1.
RMSon-statecurrentasafunctionofsurgeduration;maximumvalues003aac231051015-50050100150Tmb(°C)IT(RMS)(A)Fig.
2.
RMSon-statecurrentasafunctionofmountingbasetemperature;maximumvaluesIG=100mA;T2+G-WeEnSemiconductorsBT138Y-600E4QTriacBT138Y-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet15September20184/13003aac2270510152002468101214conductionangle,α(degrees)formfactora3060901201802.
8161.
9671.
5701.
3291.
110αα1257990.
5102113.
5Tmb(max)(°C)α=180°120°90°60°30°Ptot(W)IT(RMS)(A)α=conductionanglea=formfactor=IT(RMS)/IT(AV)Fig.
3.
TotalpowerdissipationasafunctionofRMSon-statecurrent;maximumvalues003aac228020406080100120110102103numberofcyclesITSM(A)ITSMtITTj(init)=25°Cmax1/ff=50HzFig.
4.
Non-repetitivepeakon-statecurrentasafunctionofthenumberofsinusoidalcurrentcycles;maximumvaluesWeEnSemiconductorsBT138Y-600E4QTriacBT138Y-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
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AllrightsreservedProductdatasheet15September20185/13003aac2291010210310-510-410-310-210-1tp(s)ITSM(A)(1)(2)ITSMtITTj(init)=25°Cmaxtptp≤20ms(1)dIT/dtlimit(2)T2-G+quadrantlimitFig.
5.
Non-repetitivepeakon-statecurrentasafunctionofpulsewidth;maximumvaluesWeEnSemiconductorsBT138Y-600E4QTriacBT138Y-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
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2018.
AllrightsreservedProductdatasheet15September20186/138.
ThermalcharacteristicsTable5.
ThermalcharacteristicsSymbolParameterConditionsMinTypMaxUnitRth(j-mb)thermalresistancefromjunctiontomountingbasefullcycle;Fig.
6--2.
3K/WRth(j-a)thermalresistancefromjunctiontoambientfreeairfullcycle;infreeair-60-K/W003aab80410-110-2110Zth(j-mb)(K/W)10-3tp(s)10-511010-110-210-410-3tpPtFig.
6.
Transientthermalimpedancefromjunctiontomountingbaseasafunctionofpulseduration9.
IsolationcharacteristicsTable6.
IsolationcharacteristicsSymbolParameterConditionsMinTypMaxUnitVisol(RMS)RMSisolationvoltagefromallterminalstoexternalheatsink;sinusoidalwaveform;cleananddustfree;50Hz≤f≤60Hz;RH≤65%;Tmb=25°C--2500VCisolisolationcapacitancefrommainterminal2toexternalheatsink;f=1MHz;Tmb=25°C-10-pFWeEnSemiconductorsBT138Y-600E4QTriacBT138Y-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
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AllrightsreservedProductdatasheet15September20187/1310.
CharacteristicsTable7.
CharacteristicsSymbolParameterConditionsMinTypMaxUnitStaticcharacteristicsVD=12V;IT=0.
1A;T2+G+;Tj=25°C;Fig.
7--10mAVD=12V;IT=0.
1A;T2+G-;Tj=25°C;Fig.
7--10mAVD=12V;IT=0.
1A;T2-G+;Tj=25°C;Fig.
7--10mAIGTgatetriggercurrentVD=12V;IT=0.
1A;T2-G-;Tj=25°C;Fig.
7--25mAVD=12V;IG=0.
1A;T2+G+;Tj=25°C;Fig.
8--30mAVD=12V;IG=0.
1A;T2+G-;Tj=25°C;Fig.
8--40mAVD=12V;IG=0.
1A;T2-G-;Tj=25°C;Fig.
8--30mAILlatchingcurrentVD=12V;IG=0.
1A;T2-G+;Tj=25°C;Fig.
8--40mAIHholdingcurrentVD=12V;Tj=25°C;Fig.
9--30mAVTon-statevoltageIT=15A;Tj=25°C;Fig.
10-1.
41.
65VVD=12V;IT=0.
1A;Tj=25°C;Fig.
11-0.
71VVGTgatetriggervoltageVD=600V;IT=0.
1A;Tj=125°C;Fig.
110.
250.
4-VIDoff-statecurrentVD=600V;Tj=125°C-0.
10.
5mADynamiccharacteristicsdVD/dtrateofriseofoff-statevoltageVDM=402V;Tj=125°C;(VDM=67%ofVDRM);exponentialwaveform;gateopencircuit-50-V/stgtgate-controlledturn-ontimeITM=16A;VD=600V;IG=100mA;dIG/dt=5A/s-2-sWeEnSemiconductorsBT138Y-600E4QTriacBT138Y-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
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AllrightsreservedProductdatasheet15September20188/13Tj(°C)-6014090-1040003aac2241230(1)(2)(3)(4)(1)(2)(3)(4)IGTIGT(25°C)(1)T2-G+(2)T2-G-(3)T2+G-(4)T2+G+Fig.
7.
NormalizedgatetriggercurrentasafunctionofjunctiontemperatureTj(°C)-6014090-1040003aac2251230ILIL(25°C)Fig.
8.
NormalizedlatchingcurrentasafunctionofjunctiontemperatureTj(°C)-6014090-1040003aac2261.
00.
51.
52.
00IHIH(25°C)Fig.
9.
Normalizedholdingcurrentasafunctionofjunctiontemperature003aac214010203040012VT(V)IT(A)(1)(3)0.
51.
52.
5(2)Vo=1.
175V;Rs=0.
032(1)Tj=125°C;typicalvalues(2)Tj=125°C;maximumvalues(3)Tj=25°C;maximumvaluesFig.
10.
On-statecurrentasafunctionofon-statevoltageWeEnSemiconductorsBT138Y-600E4QTriacBT138Y-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
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AllrightsreservedProductdatasheet15September20189/13Tj(°C)-6014090-1040003aac2230.
80.
41.
21.
60VGT(25°C)VGTFig.
11.
NormalizedgatetriggervoltageasafunctionofjunctiontemperatureWeEnSemiconductorsBT138Y-600E4QTriacBT138Y-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
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PackageoutlineREFERENCESOUTLINEVERSIONEUROPEANPROJECTIONISSUEDATEIECJEDECJEITASOT78DTO-220SOT78D07-04-0407-07-10UNITAmm4.
74.
31.
401.
250.
90.
60.
60.
416.
015.
26.
510.
39.
73.
00.
2A1DIMENSIONS(mmaretheoriginaldimensions)Plasticsingle-endedpackage;isolatedheatsinkmounted;1mountinghole;3-leadTO-2200510mmscalebcDD1refEe2.
54L14.
012.
8L1refp3.
73.
5Q2.
62.
2q3.
02.
7wb21.
721.
32b11.
41.
1cQA1AmountingbaseeewMpbb2b1D1LDL1qE123Fig.
12.
PackageoutlineTO-220AB(SOT78D)WeEnSemiconductorsBT138Y-600E4QTriacBT138Y-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet15September201811/1312.
LegalinformationDatasheetstatusDocumentstatus[1][2]Productstatus[3]DefinitionObjective[short]datasheetDevelopmentThisdocumentcontainsdatafromtheobjectivespecificationforproductdevelopment.
Preliminary[short]datasheetQualificationThisdocumentcontainsdatafromthepreliminaryspecification.
Product[short]datasheetProductionThisdocumentcontainstheproductspecification.
[1]Pleaseconsultthemostrecentlyissueddocumentbeforeinitiatingorcompletingadesign.
[2]Theterm'shortdatasheet'isexplainedinsection"Definitions".
[3]Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.
ThelatestproductstatusinformationisavailableontheInternetatURLhttp://www.
ween-semi.
com.
DefinitionsDraft—Thedocumentisadraftversiononly.
Thecontentisstillunderinternalreviewandsubjecttoformalapproval,whichmayresultinmodificationsoradditions.
WeEnSemiconductorsdoesnotgiveanyrepresentationsorwarrantiesastotheaccuracyorcompletenessofinformationincludedhereinandshallhavenoliabilityfortheconsequencesofuseofsuchinformation.
Shortdatasheet—Ashortdatasheetisanextractfromafulldatasheetwiththesameproducttypenumber(s)andtitle.
Ashortdatasheetisintendedforquickreferenceonlyandshouldnotbereliedupontocontaindetailedandfullinformation.
Fordetailedandfullinformationseetherelevantfulldatasheet,whichisavailableonrequestviathelocalWeEnSemiconductorssalesoffice.
Incaseofanyinconsistencyorconflictwiththeshortdatasheet,thefulldatasheetshallprevail.
Productspecification—TheinformationanddataprovidedinaProductdatasheetshalldefinethespecificationoftheproductasagreedbetweenWeEnSemiconductorsanditscustomer,unlessWeEnSemiconductorsandcustomerhaveexplicitlyagreedotherwiseinwriting.
Innoeventhowever,shallanagreementbevalidinwhichtheWeEnSemiconductorsproductisdeemedtoofferfunctionsandqualitiesbeyondthosedescribedintheProductdatasheet.
DisclaimersLimitedwarrantyandliability—Informationinthisdocumentisbelievedtobeaccurateandreliable.
However,WeEnSemiconductorsdoesnotgiveanyrepresentationsorwarranties,expressedorimplied,astotheaccuracyorcompletenessofsuchinformationandshallhavenoliabilityfortheconsequencesofuseofsuchinformation.
WeEnSemiconductorstakesnoresponsibilityforthecontentinthisdocumentifprovidedbyaninformationsourceoutsideofWeEnSemiconductors.
InnoeventshallWeEnSemiconductorsbeliableforanyindirect,incidental,punitive,specialorconsequentialdamages(including-withoutlimitation-lostprofits,lostsavings,businessinterruption,costsrelatedtotheremovalorreplacementofanyproductsorreworkcharges)whetherornotsuchdamagesarebasedontort(includingnegligence),warranty,breachofcontractoranyotherlegaltheory.
Notwithstandinganydamagesthatcustomermightincurforanyreasonwhatsoever,WeEnSemiconductors'aggregateandcumulativeliabilitytowardscustomerfortheproductsdescribedhereinshallbelimitedinaccordancewiththeTermsandconditionsofcommercialsaleofWeEnSemiconductors.
Righttomakechanges—WeEnSemiconductorsreservestherighttomakechangestoinformationpublishedinthisdocument,includingwithoutlimitationspecificationsandproductdescriptions,atanytimeandwithoutnotice.
Thisdocumentsupersedesandreplacesallinformationsuppliedpriortothepublicationhereof.
Suitabilityforuse—WeEnSemiconductorsproductsarenotdesigned,authorizedorwarrantedtobesuitableforuseinlifesupport,life-criticalorsafety-criticalsystemsorequipment,norinapplicationswherefailureormalfunctionofanWeEnSemiconductorsproductcanreasonablybeexpectedtoresultinpersonalinjury,deathorseverepropertyorenvironmentaldamage.
WeEnSemiconductorsanditssuppliersacceptnoliabilityforinclusionand/oruseofWeEnSemiconductorsproductsinsuchequipmentorapplicationsandthereforesuchinclusionand/oruseisatthecustomer'sownrisk.
Quickreferencedata—TheQuickreferencedataisanextractoftheproductdatagivenintheLimitingvaluesandCharacteristicssectionsofthisdocument,andassuchisnotcomplete,exhaustiveorlegallybinding.
Applications—Applicationsthataredescribedhereinforanyoftheseproductsareforillustrativepurposesonly.
WeEnSemiconductorsmakesnorepresentationorwarrantythatsuchapplicationswillbesuitableforthespecifiedusewithoutfurthertestingormodification.
CustomersareresponsibleforthedesignandoperationoftheirapplicationsandproductsusingWeEnSemiconductorsproducts,andWeEnSemiconductorsacceptsnoliabilityforanyassistancewithapplicationsorcustomerproductdesign.
Itiscustomer'ssoleresponsibilitytodeterminewhethertheWeEnSemiconductorsproductissuitableandfitforthecustomer'sapplicationsandproductsplanned,aswellasfortheplannedapplicationanduseofcustomer'sthirdpartycustomer(s).
Customersshouldprovideappropriatedesignandoperatingsafeguardstominimizetherisksassociatedwiththeirapplicationsandproducts.
WeEnSemiconductorsdoesnotacceptanyliabilityrelatedtoanydefault,damage,costsorproblemwhichisbasedonanyweaknessordefaultinthecustomer'sapplicationsorproducts,ortheapplicationorusebycustomer'sthirdpartycustomer(s).
Customerisresponsiblefordoingallnecessarytestingforthecustomer'sapplicationsandproductsusingWeEnSemiconductorsproductsinordertoavoidadefaultoftheapplicationsandtheproductsoroftheapplicationorusebycustomer'sthirdpartycustomer(s).
WeEndoesnotacceptanyliabilityinthisrespect.
Limitingvalues—Stressaboveoneormorelimitingvalues(asdefinedintheAbsoluteMaximumRatingsSystemofIEC60134)willcausepermanentdamagetothedevice.
Limitingvaluesarestressratingsonlyand(proper)operationofthedeviceattheseoranyotherconditionsabovethosegivenintheRecommendedoperatingconditionssection(ifpresent)ortheCharacteristicssectionsofthisdocumentisnotwarranted.
Constantorrepeatedexposuretolimitingvalueswillpermanentlyandirreversiblyaffectthequalityandreliabilityofthedevice.
Nooffertosellorlicense—Nothinginthisdocumentmaybeinterpretedorconstruedasanoffertosellproductsthatisopenforacceptanceorthegrant,conveyanceorimplicationofanylicenseunderanycopyrights,patentsorotherindustrialorintellectualpropertyrights.
Exportcontrol—Thisdocumentaswellastheitem(s)describedhereinmaybesubjecttoexportcontrolregulations.
Exportmightrequireapriorauthorizationfromcompetentauthorities.
Non-automotivequalifiedproducts—UnlessthisdatasheetexpresslystatesthatthisspecificWeEnSemiconductorsproductisautomotivequalified,theproductisnotsuitableforautomotiveuse.
Itisneitherqualifiednortestedinaccordancewithautomotivetestingorapplicationrequirements.
WeEnSemiconductorsacceptsnoliabilityforinclusionand/oruseofnon-automotivequalifiedproductsinautomotiveequipmentorapplications.
Intheeventthatcustomerusestheproductfordesign-inanduseinautomotiveapplicationstoautomotivespecificationsandstandards,customer(a)shallusetheproductwithoutWeEnSemiconductors'warrantyoftheproductforsuchautomotiveapplications,useandspecifications,and(b)whenevercustomerusestheproductforautomotiveapplicationsbeyondWeEnSemiconductors'specificationssuchuseshallbesolelyatcustomer'sownrisk,and(c)customerfullyindemnifiesWeEnSemiconductorsforanyliability,damagesorfailedproductclaimsresultingfromcustomerdesignanduseoftheproductforautomotiveapplicationsbeyondWeEnSemiconductors'standardwarrantyandWeEnSemiconductors'productspecifications.
WeEnSemiconductorsBT138Y-600E4QTriacBT138Y-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
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AllrightsreservedProductdatasheet15September201812/13Translations—Anon-English(translated)versionofadocumentisforreferenceonly.
TheEnglishversionshallprevailincaseofanydiscrepancybetweenthetranslatedandEnglishversions.
TrademarksNotice:Allreferencedbrands,productnames,servicenamesandtrademarksarethepropertyoftheirrespectiveowners.
WeEnSemiconductorsBT138Y-600E4QTriacBT138Y-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
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AllrightsreservedProductdatasheet15September201813/1313.
Contents1.
Generaldescription.
12.
Featuresandbenefits.
13.
Applications.
14.
Quickreferencedata.
15.
Pinninginformation.
26.
Orderinginformation.
27.
Limitingvalues.
38.
Thermalcharacteristics.
69.
Isolationcharacteristics.
610.
Characteristics.
711.
Packageoutline.
1012.
Legalinformation.
11WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedFormoreinformation,pleasevisit:http://www.
ween-semi.
comForsalesofficeaddresses,pleasesendanemailto:salesaddresses@ween-semi.
comDateofrelease:15September2018MouserElectronicsAuthorizedDistributorClicktoViewPricing,Inventory,Delivery&LifecycleInformation:WeEnSemiconductors:BT138Y-600E,127
GeneraldescriptionPlanarpassivatedsensitivegatefourquadranttriacinaninternallyinsulatedSOT78D(TO-220AB)plasticpackageintendedforuseingeneralpurposebidirectionalswitchingandphasecontrolapplications.
Thissensitivegate"seriesE"triaccanbeinterfaceddirectlytomicrocontrollers,logicintegratedcircuitsandotherlowpowergatetriggercircuits.
Theinternallyinsulatedmountingbasegivesgoodthermalperformancecombinedwitheaseofhandlingandassemblybytheuser.
2.
Featuresandbenefits2500VRMSisolationvoltagecapabilityDirectinterfacingtologiclevelICsDirectinterfacingtolowpowergatedriversandmicrocontrollersHighblockingvoltagecapabilityIndustrystandardTO-220packageforeaseofhandlingIsolatedmountingbasePlanarpassivatedforvoltageruggednessandreliabilitySensitivegateTriggeringinallfourquadrants3.
Applications230VlampdimmersGeneralpurposeswitchingandphasecontrol4.
QuickreferencedataTable1.
QuickreferencedataSymbolParameterConditionsMinTypMaxUnitVDRMrepetitivepeakoff-statevoltage--600VIT(RMS)RMSon-statecurrentfullsinewave;Tmb≤85°C;Fig.
1;Fig.
2;Fig.
3--12Afullsinewave;Tj(init)=25°C;tp=20ms;Fig.
4;Fig.
5--95AITSMnon-repetitivepeakon-statecurrentfullsinewave;Tj(init)=25°C;tp=16.
7ms--105ATjjunctiontemperature--125°CStaticcharacteristicsIGTgatetriggercurrentVD=12V;IT=0.
1A;T2+G+;Tj=25°C;Fig.
7--10mAWeEnSemiconductorsBT138Y-600E4QTriacBT138Y-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
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AllrightsreservedProductdatasheet15September20182/13SymbolParameterConditionsMinTypMaxUnitVD=12V;IT=0.
1A;T2+G-;Tj=25°C;Fig.
7--10mAVD=12V;IT=0.
1A;T2-G+;Tj=25°C;Fig.
7--10mAVD=12V;IT=0.
1A;T2-G-;Tj=25°C;Fig.
7--25mAIHholdingcurrentVD=12V;Tj=25°C;Fig.
9--30mAVTon-statevoltageIT=15A;Tj=25°C;Fig.
10-1.
41.
65VDynamiccharacteristicsdVD/dtrateofriseofoff-statevoltageVDM=402V;Tj=125°C;(VDM=67%ofVDRM);exponentialwaveform;gateopencircuit-50-V/s5.
PinninginformationTable2.
PinninginformationPinSymbolDescriptionSimplifiedoutlineGraphicsymbol1T1mainterminal12T2mainterminal23Ggatembn.
c.
mountingbase;isolated12mb3TO-220AB(SOT78D)sym051T1GT26.
OrderinginformationTable3.
OrderinginformationPackageTypenumberNameDescriptionVersionBT138Y-600ETO-220ABplasticsingle-endedpackage;isolatedheatsinkmounted;1mountinghole;3-leadTO-220SOT78DWeEnSemiconductorsBT138Y-600E4QTriacBT138Y-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet15September20183/137.
LimitingvaluesTable4.
LimitingvaluesInaccordancewiththeAbsoluteMaximumRatingSystem(IEC60134).
SymbolParameterConditionsMinMaxUnitVDRMrepetitivepeakoff-statevoltage-600VIT(RMS)RMSon-statecurrentfullsinewave;Tmb≤85°C;Fig.
1;Fig.
2;Fig.
3-12Afullsinewave;Tj(init)=25°C;tp=20ms;Fig.
4;Fig.
5-95AITSMnon-repetitivepeakon-statecurrentfullsinewave;Tj(init)=25°C;tp=16.
7ms-105AI2tI2tforfusingtp=10ms;SIN-45As-50A/sIG=100mA;T2+G+-50A/sIG=100mA;T2-G--50A/sdIT/dtrateofriseofon-statecurrentIG=100mA;T2-G+-10A/sIGMpeakgatecurrent-2APGMpeakgatepower-5WPG(AV)averagegatepoweroverany20msperiod-0.
5WTstgstoragetemperature-40150°CTjjunctiontemperature-125°C003aac230010203010-210-1110surgeduration(s)IT(RMS)(A)f=50Hz;Tmb=85°CFig.
1.
RMSon-statecurrentasafunctionofsurgeduration;maximumvalues003aac231051015-50050100150Tmb(°C)IT(RMS)(A)Fig.
2.
RMSon-statecurrentasafunctionofmountingbasetemperature;maximumvaluesIG=100mA;T2+G-WeEnSemiconductorsBT138Y-600E4QTriacBT138Y-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet15September20184/13003aac2270510152002468101214conductionangle,α(degrees)formfactora3060901201802.
8161.
9671.
5701.
3291.
110αα1257990.
5102113.
5Tmb(max)(°C)α=180°120°90°60°30°Ptot(W)IT(RMS)(A)α=conductionanglea=formfactor=IT(RMS)/IT(AV)Fig.
3.
TotalpowerdissipationasafunctionofRMSon-statecurrent;maximumvalues003aac228020406080100120110102103numberofcyclesITSM(A)ITSMtITTj(init)=25°Cmax1/ff=50HzFig.
4.
Non-repetitivepeakon-statecurrentasafunctionofthenumberofsinusoidalcurrentcycles;maximumvaluesWeEnSemiconductorsBT138Y-600E4QTriacBT138Y-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet15September20185/13003aac2291010210310-510-410-310-210-1tp(s)ITSM(A)(1)(2)ITSMtITTj(init)=25°Cmaxtptp≤20ms(1)dIT/dtlimit(2)T2-G+quadrantlimitFig.
5.
Non-repetitivepeakon-statecurrentasafunctionofpulsewidth;maximumvaluesWeEnSemiconductorsBT138Y-600E4QTriacBT138Y-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet15September20186/138.
ThermalcharacteristicsTable5.
ThermalcharacteristicsSymbolParameterConditionsMinTypMaxUnitRth(j-mb)thermalresistancefromjunctiontomountingbasefullcycle;Fig.
6--2.
3K/WRth(j-a)thermalresistancefromjunctiontoambientfreeairfullcycle;infreeair-60-K/W003aab80410-110-2110Zth(j-mb)(K/W)10-3tp(s)10-511010-110-210-410-3tpPtFig.
6.
Transientthermalimpedancefromjunctiontomountingbaseasafunctionofpulseduration9.
IsolationcharacteristicsTable6.
IsolationcharacteristicsSymbolParameterConditionsMinTypMaxUnitVisol(RMS)RMSisolationvoltagefromallterminalstoexternalheatsink;sinusoidalwaveform;cleananddustfree;50Hz≤f≤60Hz;RH≤65%;Tmb=25°C--2500VCisolisolationcapacitancefrommainterminal2toexternalheatsink;f=1MHz;Tmb=25°C-10-pFWeEnSemiconductorsBT138Y-600E4QTriacBT138Y-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet15September20187/1310.
CharacteristicsTable7.
CharacteristicsSymbolParameterConditionsMinTypMaxUnitStaticcharacteristicsVD=12V;IT=0.
1A;T2+G+;Tj=25°C;Fig.
7--10mAVD=12V;IT=0.
1A;T2+G-;Tj=25°C;Fig.
7--10mAVD=12V;IT=0.
1A;T2-G+;Tj=25°C;Fig.
7--10mAIGTgatetriggercurrentVD=12V;IT=0.
1A;T2-G-;Tj=25°C;Fig.
7--25mAVD=12V;IG=0.
1A;T2+G+;Tj=25°C;Fig.
8--30mAVD=12V;IG=0.
1A;T2+G-;Tj=25°C;Fig.
8--40mAVD=12V;IG=0.
1A;T2-G-;Tj=25°C;Fig.
8--30mAILlatchingcurrentVD=12V;IG=0.
1A;T2-G+;Tj=25°C;Fig.
8--40mAIHholdingcurrentVD=12V;Tj=25°C;Fig.
9--30mAVTon-statevoltageIT=15A;Tj=25°C;Fig.
10-1.
41.
65VVD=12V;IT=0.
1A;Tj=25°C;Fig.
11-0.
71VVGTgatetriggervoltageVD=600V;IT=0.
1A;Tj=125°C;Fig.
110.
250.
4-VIDoff-statecurrentVD=600V;Tj=125°C-0.
10.
5mADynamiccharacteristicsdVD/dtrateofriseofoff-statevoltageVDM=402V;Tj=125°C;(VDM=67%ofVDRM);exponentialwaveform;gateopencircuit-50-V/stgtgate-controlledturn-ontimeITM=16A;VD=600V;IG=100mA;dIG/dt=5A/s-2-sWeEnSemiconductorsBT138Y-600E4QTriacBT138Y-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet15September20188/13Tj(°C)-6014090-1040003aac2241230(1)(2)(3)(4)(1)(2)(3)(4)IGTIGT(25°C)(1)T2-G+(2)T2-G-(3)T2+G-(4)T2+G+Fig.
7.
NormalizedgatetriggercurrentasafunctionofjunctiontemperatureTj(°C)-6014090-1040003aac2251230ILIL(25°C)Fig.
8.
NormalizedlatchingcurrentasafunctionofjunctiontemperatureTj(°C)-6014090-1040003aac2261.
00.
51.
52.
00IHIH(25°C)Fig.
9.
Normalizedholdingcurrentasafunctionofjunctiontemperature003aac214010203040012VT(V)IT(A)(1)(3)0.
51.
52.
5(2)Vo=1.
175V;Rs=0.
032(1)Tj=125°C;typicalvalues(2)Tj=125°C;maximumvalues(3)Tj=25°C;maximumvaluesFig.
10.
On-statecurrentasafunctionofon-statevoltageWeEnSemiconductorsBT138Y-600E4QTriacBT138Y-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet15September20189/13Tj(°C)-6014090-1040003aac2230.
80.
41.
21.
60VGT(25°C)VGTFig.
11.
NormalizedgatetriggervoltageasafunctionofjunctiontemperatureWeEnSemiconductorsBT138Y-600E4QTriacBT138Y-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet15September201810/1311.
PackageoutlineREFERENCESOUTLINEVERSIONEUROPEANPROJECTIONISSUEDATEIECJEDECJEITASOT78DTO-220SOT78D07-04-0407-07-10UNITAmm4.
74.
31.
401.
250.
90.
60.
60.
416.
015.
26.
510.
39.
73.
00.
2A1DIMENSIONS(mmaretheoriginaldimensions)Plasticsingle-endedpackage;isolatedheatsinkmounted;1mountinghole;3-leadTO-2200510mmscalebcDD1refEe2.
54L14.
012.
8L1refp3.
73.
5Q2.
62.
2q3.
02.
7wb21.
721.
32b11.
41.
1cQA1AmountingbaseeewMpbb2b1D1LDL1qE123Fig.
12.
PackageoutlineTO-220AB(SOT78D)WeEnSemiconductorsBT138Y-600E4QTriacBT138Y-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet15September201811/1312.
LegalinformationDatasheetstatusDocumentstatus[1][2]Productstatus[3]DefinitionObjective[short]datasheetDevelopmentThisdocumentcontainsdatafromtheobjectivespecificationforproductdevelopment.
Preliminary[short]datasheetQualificationThisdocumentcontainsdatafromthepreliminaryspecification.
Product[short]datasheetProductionThisdocumentcontainstheproductspecification.
[1]Pleaseconsultthemostrecentlyissueddocumentbeforeinitiatingorcompletingadesign.
[2]Theterm'shortdatasheet'isexplainedinsection"Definitions".
[3]Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.
ThelatestproductstatusinformationisavailableontheInternetatURLhttp://www.
ween-semi.
com.
DefinitionsDraft—Thedocumentisadraftversiononly.
Thecontentisstillunderinternalreviewandsubjecttoformalapproval,whichmayresultinmodificationsoradditions.
WeEnSemiconductorsdoesnotgiveanyrepresentationsorwarrantiesastotheaccuracyorcompletenessofinformationincludedhereinandshallhavenoliabilityfortheconsequencesofuseofsuchinformation.
Shortdatasheet—Ashortdatasheetisanextractfromafulldatasheetwiththesameproducttypenumber(s)andtitle.
Ashortdatasheetisintendedforquickreferenceonlyandshouldnotbereliedupontocontaindetailedandfullinformation.
Fordetailedandfullinformationseetherelevantfulldatasheet,whichisavailableonrequestviathelocalWeEnSemiconductorssalesoffice.
Incaseofanyinconsistencyorconflictwiththeshortdatasheet,thefulldatasheetshallprevail.
Productspecification—TheinformationanddataprovidedinaProductdatasheetshalldefinethespecificationoftheproductasagreedbetweenWeEnSemiconductorsanditscustomer,unlessWeEnSemiconductorsandcustomerhaveexplicitlyagreedotherwiseinwriting.
Innoeventhowever,shallanagreementbevalidinwhichtheWeEnSemiconductorsproductisdeemedtoofferfunctionsandqualitiesbeyondthosedescribedintheProductdatasheet.
DisclaimersLimitedwarrantyandliability—Informationinthisdocumentisbelievedtobeaccurateandreliable.
However,WeEnSemiconductorsdoesnotgiveanyrepresentationsorwarranties,expressedorimplied,astotheaccuracyorcompletenessofsuchinformationandshallhavenoliabilityfortheconsequencesofuseofsuchinformation.
WeEnSemiconductorstakesnoresponsibilityforthecontentinthisdocumentifprovidedbyaninformationsourceoutsideofWeEnSemiconductors.
InnoeventshallWeEnSemiconductorsbeliableforanyindirect,incidental,punitive,specialorconsequentialdamages(including-withoutlimitation-lostprofits,lostsavings,businessinterruption,costsrelatedtotheremovalorreplacementofanyproductsorreworkcharges)whetherornotsuchdamagesarebasedontort(includingnegligence),warranty,breachofcontractoranyotherlegaltheory.
Notwithstandinganydamagesthatcustomermightincurforanyreasonwhatsoever,WeEnSemiconductors'aggregateandcumulativeliabilitytowardscustomerfortheproductsdescribedhereinshallbelimitedinaccordancewiththeTermsandconditionsofcommercialsaleofWeEnSemiconductors.
Righttomakechanges—WeEnSemiconductorsreservestherighttomakechangestoinformationpublishedinthisdocument,includingwithoutlimitationspecificationsandproductdescriptions,atanytimeandwithoutnotice.
Thisdocumentsupersedesandreplacesallinformationsuppliedpriortothepublicationhereof.
Suitabilityforuse—WeEnSemiconductorsproductsarenotdesigned,authorizedorwarrantedtobesuitableforuseinlifesupport,life-criticalorsafety-criticalsystemsorequipment,norinapplicationswherefailureormalfunctionofanWeEnSemiconductorsproductcanreasonablybeexpectedtoresultinpersonalinjury,deathorseverepropertyorenvironmentaldamage.
WeEnSemiconductorsanditssuppliersacceptnoliabilityforinclusionand/oruseofWeEnSemiconductorsproductsinsuchequipmentorapplicationsandthereforesuchinclusionand/oruseisatthecustomer'sownrisk.
Quickreferencedata—TheQuickreferencedataisanextractoftheproductdatagivenintheLimitingvaluesandCharacteristicssectionsofthisdocument,andassuchisnotcomplete,exhaustiveorlegallybinding.
Applications—Applicationsthataredescribedhereinforanyoftheseproductsareforillustrativepurposesonly.
WeEnSemiconductorsmakesnorepresentationorwarrantythatsuchapplicationswillbesuitableforthespecifiedusewithoutfurthertestingormodification.
CustomersareresponsibleforthedesignandoperationoftheirapplicationsandproductsusingWeEnSemiconductorsproducts,andWeEnSemiconductorsacceptsnoliabilityforanyassistancewithapplicationsorcustomerproductdesign.
Itiscustomer'ssoleresponsibilitytodeterminewhethertheWeEnSemiconductorsproductissuitableandfitforthecustomer'sapplicationsandproductsplanned,aswellasfortheplannedapplicationanduseofcustomer'sthirdpartycustomer(s).
Customersshouldprovideappropriatedesignandoperatingsafeguardstominimizetherisksassociatedwiththeirapplicationsandproducts.
WeEnSemiconductorsdoesnotacceptanyliabilityrelatedtoanydefault,damage,costsorproblemwhichisbasedonanyweaknessordefaultinthecustomer'sapplicationsorproducts,ortheapplicationorusebycustomer'sthirdpartycustomer(s).
Customerisresponsiblefordoingallnecessarytestingforthecustomer'sapplicationsandproductsusingWeEnSemiconductorsproductsinordertoavoidadefaultoftheapplicationsandtheproductsoroftheapplicationorusebycustomer'sthirdpartycustomer(s).
WeEndoesnotacceptanyliabilityinthisrespect.
Limitingvalues—Stressaboveoneormorelimitingvalues(asdefinedintheAbsoluteMaximumRatingsSystemofIEC60134)willcausepermanentdamagetothedevice.
Limitingvaluesarestressratingsonlyand(proper)operationofthedeviceattheseoranyotherconditionsabovethosegivenintheRecommendedoperatingconditionssection(ifpresent)ortheCharacteristicssectionsofthisdocumentisnotwarranted.
Constantorrepeatedexposuretolimitingvalueswillpermanentlyandirreversiblyaffectthequalityandreliabilityofthedevice.
Nooffertosellorlicense—Nothinginthisdocumentmaybeinterpretedorconstruedasanoffertosellproductsthatisopenforacceptanceorthegrant,conveyanceorimplicationofanylicenseunderanycopyrights,patentsorotherindustrialorintellectualpropertyrights.
Exportcontrol—Thisdocumentaswellastheitem(s)describedhereinmaybesubjecttoexportcontrolregulations.
Exportmightrequireapriorauthorizationfromcompetentauthorities.
Non-automotivequalifiedproducts—UnlessthisdatasheetexpresslystatesthatthisspecificWeEnSemiconductorsproductisautomotivequalified,theproductisnotsuitableforautomotiveuse.
Itisneitherqualifiednortestedinaccordancewithautomotivetestingorapplicationrequirements.
WeEnSemiconductorsacceptsnoliabilityforinclusionand/oruseofnon-automotivequalifiedproductsinautomotiveequipmentorapplications.
Intheeventthatcustomerusestheproductfordesign-inanduseinautomotiveapplicationstoautomotivespecificationsandstandards,customer(a)shallusetheproductwithoutWeEnSemiconductors'warrantyoftheproductforsuchautomotiveapplications,useandspecifications,and(b)whenevercustomerusestheproductforautomotiveapplicationsbeyondWeEnSemiconductors'specificationssuchuseshallbesolelyatcustomer'sownrisk,and(c)customerfullyindemnifiesWeEnSemiconductorsforanyliability,damagesorfailedproductclaimsresultingfromcustomerdesignanduseoftheproductforautomotiveapplicationsbeyondWeEnSemiconductors'standardwarrantyandWeEnSemiconductors'productspecifications.
WeEnSemiconductorsBT138Y-600E4QTriacBT138Y-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet15September201812/13Translations—Anon-English(translated)versionofadocumentisforreferenceonly.
TheEnglishversionshallprevailincaseofanydiscrepancybetweenthetranslatedandEnglishversions.
TrademarksNotice:Allreferencedbrands,productnames,servicenamesandtrademarksarethepropertyoftheirrespectiveowners.
WeEnSemiconductorsBT138Y-600E4QTriacBT138Y-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet15September201813/1313.
Contents1.
Generaldescription.
12.
Featuresandbenefits.
13.
Applications.
14.
Quickreferencedata.
15.
Pinninginformation.
26.
Orderinginformation.
27.
Limitingvalues.
38.
Thermalcharacteristics.
69.
Isolationcharacteristics.
610.
Characteristics.
711.
Packageoutline.
1012.
Legalinformation.
11WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedFormoreinformation,pleasevisit:http://www.
ween-semi.
comForsalesofficeaddresses,pleasesendanemailto:salesaddresses@ween-semi.
comDateofrelease:15September2018MouserElectronicsAuthorizedDistributorClicktoViewPricing,Inventory,Delivery&LifecycleInformation:WeEnSemiconductors:BT138Y-600E,127
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