0.98bt封杀
bt封杀 时间:2021-02-20 阅读:()
BTA202X-600E3QHi-ComTriac7September2018Productdatasheet1.
GeneraldescriptionPlanarpassivatedhighcommutationthreequadranttriacinaSOT186A(TO-220F)"fullpack"plasticpackage.
This"seriesE"triacbalancestherequirementsofcommutationperformanceandgatesensitivityandisintendedforinterfacingwithlowpowerdriversincludingmicrocontrollers.
2.
Featuresandbenefits3QtechnologyforimprovednoiseimmunityDirectinterfacingwithlowpowerdriversandmicrocontrollersGoodimmunitytofalseturn-onbydV/dtHighcommutationcapabilitywithsensitivegateHighvoltagecapabilityIsolatedmountingbasepackagePlanartechnologyforvoltageruggednessandreliabilitySensitivegateforeasylogicleveltriggeringTriggeringinthreequadrantsonly3.
ApplicationsGeneralpurposemotorcontrolsLargeandsmallappliances(WhiteGoods)Loadssuchascontactors,circuitbreakers,valves,dispensersanddoorlocksLower-powerhighlyinductive,resistiveandsafetyloads4.
QuickreferencedataTable1.
QuickreferencedataSymbolParameterConditionsMinTypMaxUnitVDRMrepetitivepeakoff-statevoltage--600VIT(RMS)RMSon-statecurrentfullsinewave;Th≤110°C;Fig.
1;Fig.
2;Fig.
3--2Afullsinewave;Tj(init)=25°C;tp=20ms;Fig.
4;Fig.
5--14AITSMnon-repetitivepeakon-statecurrentfullsinewave;Tj(init)=25°C;tp=16.
7ms--15.
4ATjjunctiontemperature--125°CStaticcharacteristicsIGTgatetriggercurrentVD=12V;IT=0.
1A;T2+G+;Tj=25°C;Fig.
70.
5-10mAWeEnSemiconductorsBTA202X-600E3QHi-ComTriacBTA202X-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet7September20182/13SymbolParameterConditionsMinTypMaxUnitVD=12V;IT=0.
1A;T2+G-;Tj=25°C;Fig.
70.
5-10mAVD=12V;IT=0.
1A;T2-G-;Tj=25°C;Fig.
70.
5-10mAIHholdingcurrentVD=12V;Tj=25°C;Fig.
9--10mAVTon-statevoltageIT=3A;Tj=25°C;Fig.
10-1.
632VDynamiccharacteristicsdVD/dtrateofriseofoff-statevoltageVDM=402V;Tj=125°C;(VDM=67%ofVDRM);exponentialwaveform;RGT1(ext)=220Ω-500-V/sVD=400V;Tj=125°C;IT(RMS)=2A;dVcom/dt=20V/s;(snubberlesscondition);gateopencircuit2--A/msdIcom/dtrateofchangeofcommutatingcurrentVD=400V;Tj=125°C;IT(RMS)=2A;dVcom/dt=10V/s;gateopencircuit2.
3--A/ms5.
PinninginformationTable2.
PinninginformationPinSymbolDescriptionSimplifiedoutlineGraphicsymbol1T1mainterminal12T2mainterminal23Ggatembn.
c.
mountingbase;isolated321mbTO-220F(SOT186A)sym051T1GT26.
OrderinginformationTable3.
OrderinginformationPackageTypenumberNameDescriptionVersionBTA202X-600ETO-220Fplasticsingle-endedpackage;isolatedheatsinkmounted;1mountinghole;3-leadTO-220"fullpack"SOT186AWeEnSemiconductorsBTA202X-600E3QHi-ComTriacBTA202X-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet7September20183/137.
LimitingvaluesTable4.
LimitingvaluesInaccordancewiththeAbsoluteMaximumRatingSystem(IEC60134).
SymbolParameterConditionsMinMaxUnitVDRMrepetitivepeakoff-statevoltage-600VIT(RMS)RMSon-statecurrentfullsinewave;Th≤110°C;Fig.
1;Fig.
2;Fig.
3-2Afullsinewave;Tj(init)=25°C;tp=20ms;Fig.
4;Fig.
5-14AITSMnon-repetitivepeakon-statecurrentfullsinewave;Tj(init)=25°C;tp=16.
7ms-15.
4AI2tI2tforfusingtp=10ms;SIN-0.
98AsdIT/dtrateofriseofon-statecurrentIG=0.
2A-100A/sIGMpeakgatecurrent-2APGMpeakgatepower-5WPG(AV)averagegatepoweroverany20msperiod-0.
5WTstgstoragetemperature-40150°CTjjunctiontemperature-125°C003aac111024681010-210-1110surgeduration(s)IT(RMS)(A)f=50Hz;Th=110°CFig.
1.
RMSon-statecurrentasafunctionofsurgeduration;maximumvalues003aac1090123-50050100150Th(°C)IT(RMS)(A)Fig.
2.
RMSon-statecurrentasafunctionofheatsinktemperature;maximumvaluesWeEnSemiconductorsBTA202X-600E3QHi-ComTriacBTA202X-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet7September20184/13003aac112012300.
40.
81.
21.
62IT(RMS)(A)Ptot(W)α=180°120°90°60°30°conductionangle(degrees)formfactora30609012018042.
82.
21.
91.
57αα=conductionanglea=formfactor=IT(RMS)/IT(AV)Fig.
3.
TotalpowerdissipationasafunctionofRMSon-statecurrent;maximumvalues003aac1131010210310-510-410-310-210-1tp(s)ITSM(A)(1)ITSMtITTj(init)=25°Cmaxtptp≤20ms(1)dIT/dtlimitFig.
4.
Non-repetitivepeakon-statecurrentasafunctionofpulsewidth;maximumvaluesWeEnSemiconductorsBTA202X-600E3QHi-ComTriacBTA202X-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet7September20185/13003aac110048121620110102103numberofcyclesITSM(A)ITSMtITTj(init)=25°Cmax1/ff=50HzFig.
5.
Non-repetitivepeakon-statecurrentasafunctionofthenumberofsinusoidalcurrentcycles;maximumvaluesWeEnSemiconductorsBTA202X-600E3QHi-ComTriacBTA202X-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet7September20186/138.
ThermalcharacteristicsTable5.
ThermalcharacteristicsSymbolParameterConditionsMinTypMaxUnitRth(j-h)thermalresistancefromjunctiontoheatsinkfullcycle;withheatsinkcompound;Fig.
6--5.
5K/WRth(j-a)thermalresistancefromjunctiontoambientfreeairinfreeair-55-K/W003aak516tp(s)10-511010-110-210-410-3110-110Zth(j-h)(K/W)10-2tpPtFig.
6.
Transientthermalimpedancefromjunctiontoheatsinkasafunctionofpulsewidth9.
IsolationcharacteristicsTable6.
IsolationcharacteristicsSymbolParameterConditionsMinTypMaxUnitVisol(RMS)RMSisolationvoltagefromallterminalstoexternalheatsink;sinusoidalwaveform;cleananddustfree;50Hz≤f≤60Hz;RH≤65%;Th=25°C--2500VCisolisolationcapacitancefrommainterminal2toexternalheatsink;f=1MHz-10-pFWeEnSemiconductorsBTA202X-600E3QHi-ComTriacBTA202X-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet7September20187/1310.
CharacteristicsTable7.
CharacteristicsSymbolParameterConditionsMinTypMaxUnitStaticcharacteristicsVD=12V;IT=0.
1A;T2+G+;Tj=25°C;Fig.
70.
5-10mAVD=12V;IT=0.
1A;T2+G-;Tj=25°C;Fig.
70.
5-10mAIGTgatetriggercurrentVD=12V;IT=0.
1A;T2-G-;Tj=25°C;Fig.
70.
5-10mAVD=12V;IG=0.
1A;T2+G+;Tj=25°C;Fig.
8--12mAVD=12V;IG=0.
1A;T2+G-;Tj=25°C;Fig.
8--20mAILlatchingcurrentVD=12V;IG=0.
1A;T2-G-;Tj=25°C;Fig.
8--12mAIHholdingcurrentVD=12V;Tj=25°C;Fig.
9--10mAVTon-statevoltageIT=3A;Tj=25°C;Fig.
10-1.
632VVD=12V;IT=0.
1A;Tj=25°C;Fig.
11-0.
71VVGTgatetriggervoltageVD=400V;IT=0.
1A;Tj=125°C;Fig.
110.
20.
3-VIDoff-statecurrentVD=600V;Tj=125°C-0.
10.
5mADynamiccharacteristicsdVD/dtrateofriseofoff-statevoltageVDM=402V;Tj=125°C;(VDM=67%ofVDRM);exponentialwaveform;RGT1(ext)=220Ω-500-V/sVD=400V;Tj=125°C;IT(RMS)=2A;dVcom/dt=20V/s;(snubberlesscondition);gateopencircuit2--A/msdIcom/dtrateofchangeofcommutatingcurrentVD=400V;Tj=125°C;IT(RMS)=2A;dVcom/dt=10V/s;gateopencircuit2.
3--A/msWeEnSemiconductorsBTA202X-600E3QHi-ComTriacBTA202X-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet7September20188/13IGTIGT(25°C)Tj(°C)-500150100501230003aaa959(1)(2)(3)(1)(2)(3)(1)T2-G-(2)T2+G-(3)T2+G+Fig.
7.
NormalizedgatetriggercurrentasafunctionofjunctiontemperatureTj(°C)-50150100050003aak5101230ILIL(25°C)Fig.
8.
NormalizedlatchingcurrentasafunctionofjunctiontemperatureTj(°C)-50150100050003aak5111230IHIH(25°C)Fig.
9.
Normalizedholdingcurrentasafunctionofjunctiontemperature003aac10801230123VT(V)IT(A)(1)(2)(3)Vo=0.
9V;Rs=0.
267(1)Tj=125°C;typicalvalues(2)Tj=125°C;maximumvalues(3)Tj=25°C;maximumvaluesFig.
10.
On-statecurrentasafunctionofon-statevoltageWeEnSemiconductorsBTA202X-600E3QHi-ComTriacBTA202X-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet7September20189/13Tj(°C)-50150100050003aak5120.
81.
21.
60.
4VGTVGT(25°C)Fig.
11.
NormalizedgatetriggervoltageasafunctionofjunctiontemperatureWeEnSemiconductorsBTA202X-600E3QHi-ComTriacBTA202X-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet7September201810/1311.
PackageoutlineFig.
12.
PackageoutlineTO-220F(SOT186A)WeEnSemiconductorsBTA202X-600E3QHi-ComTriacBTA202X-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet7September201811/1312.
LegalinformationDatasheetstatusDocumentstatus[1][2]Productstatus[3]DefinitionObjective[short]datasheetDevelopmentThisdocumentcontainsdatafromtheobjectivespecificationforproductdevelopment.
Preliminary[short]datasheetQualificationThisdocumentcontainsdatafromthepreliminaryspecification.
Product[short]datasheetProductionThisdocumentcontainstheproductspecification.
[1]Pleaseconsultthemostrecentlyissueddocumentbeforeinitiatingorcompletingadesign.
[2]Theterm'shortdatasheet'isexplainedinsection"Definitions".
[3]Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.
ThelatestproductstatusinformationisavailableontheInternetatURLhttp://www.
ween-semi.
com.
DefinitionsDraft—Thedocumentisadraftversiononly.
Thecontentisstillunderinternalreviewandsubjecttoformalapproval,whichmayresultinmodificationsoradditions.
WeEnSemiconductorsdoesnotgiveanyrepresentationsorwarrantiesastotheaccuracyorcompletenessofinformationincludedhereinandshallhavenoliabilityfortheconsequencesofuseofsuchinformation.
Shortdatasheet—Ashortdatasheetisanextractfromafulldatasheetwiththesameproducttypenumber(s)andtitle.
Ashortdatasheetisintendedforquickreferenceonlyandshouldnotbereliedupontocontaindetailedandfullinformation.
Fordetailedandfullinformationseetherelevantfulldatasheet,whichisavailableonrequestviathelocalWeEnSemiconductorssalesoffice.
Incaseofanyinconsistencyorconflictwiththeshortdatasheet,thefulldatasheetshallprevail.
Productspecification—TheinformationanddataprovidedinaProductdatasheetshalldefinethespecificationoftheproductasagreedbetweenWeEnSemiconductorsanditscustomer,unlessWeEnSemiconductorsandcustomerhaveexplicitlyagreedotherwiseinwriting.
Innoeventhowever,shallanagreementbevalidinwhichtheWeEnSemiconductorsproductisdeemedtoofferfunctionsandqualitiesbeyondthosedescribedintheProductdatasheet.
DisclaimersLimitedwarrantyandliability—Informationinthisdocumentisbelievedtobeaccurateandreliable.
However,WeEnSemiconductorsdoesnotgiveanyrepresentationsorwarranties,expressedorimplied,astotheaccuracyorcompletenessofsuchinformationandshallhavenoliabilityfortheconsequencesofuseofsuchinformation.
WeEnSemiconductorstakesnoresponsibilityforthecontentinthisdocumentifprovidedbyaninformationsourceoutsideofWeEnSemiconductors.
InnoeventshallWeEnSemiconductorsbeliableforanyindirect,incidental,punitive,specialorconsequentialdamages(including-withoutlimitation-lostprofits,lostsavings,businessinterruption,costsrelatedtotheremovalorreplacementofanyproductsorreworkcharges)whetherornotsuchdamagesarebasedontort(includingnegligence),warranty,breachofcontractoranyotherlegaltheory.
Notwithstandinganydamagesthatcustomermightincurforanyreasonwhatsoever,WeEnSemiconductors'aggregateandcumulativeliabilitytowardscustomerfortheproductsdescribedhereinshallbelimitedinaccordancewiththeTermsandconditionsofcommercialsaleofWeEnSemiconductors.
Righttomakechanges—WeEnSemiconductorsreservestherighttomakechangestoinformationpublishedinthisdocument,includingwithoutlimitationspecificationsandproductdescriptions,atanytimeandwithoutnotice.
Thisdocumentsupersedesandreplacesallinformationsuppliedpriortothepublicationhereof.
Suitabilityforuse—WeEnSemiconductorsproductsarenotdesigned,authorizedorwarrantedtobesuitableforuseinlifesupport,life-criticalorsafety-criticalsystemsorequipment,norinapplicationswherefailureormalfunctionofanWeEnSemiconductorsproductcanreasonablybeexpectedtoresultinpersonalinjury,deathorseverepropertyorenvironmentaldamage.
WeEnSemiconductorsanditssuppliersacceptnoliabilityforinclusionand/oruseofWeEnSemiconductorsproductsinsuchequipmentorapplicationsandthereforesuchinclusionand/oruseisatthecustomer'sownrisk.
Quickreferencedata—TheQuickreferencedataisanextractoftheproductdatagivenintheLimitingvaluesandCharacteristicssectionsofthisdocument,andassuchisnotcomplete,exhaustiveorlegallybinding.
Applications—Applicationsthataredescribedhereinforanyoftheseproductsareforillustrativepurposesonly.
WeEnSemiconductorsmakesnorepresentationorwarrantythatsuchapplicationswillbesuitableforthespecifiedusewithoutfurthertestingormodification.
CustomersareresponsibleforthedesignandoperationoftheirapplicationsandproductsusingWeEnSemiconductorsproducts,andWeEnSemiconductorsacceptsnoliabilityforanyassistancewithapplicationsorcustomerproductdesign.
Itiscustomer'ssoleresponsibilitytodeterminewhethertheWeEnSemiconductorsproductissuitableandfitforthecustomer'sapplicationsandproductsplanned,aswellasfortheplannedapplicationanduseofcustomer'sthirdpartycustomer(s).
Customersshouldprovideappropriatedesignandoperatingsafeguardstominimizetherisksassociatedwiththeirapplicationsandproducts.
WeEnSemiconductorsdoesnotacceptanyliabilityrelatedtoanydefault,damage,costsorproblemwhichisbasedonanyweaknessordefaultinthecustomer'sapplicationsorproducts,ortheapplicationorusebycustomer'sthirdpartycustomer(s).
Customerisresponsiblefordoingallnecessarytestingforthecustomer'sapplicationsandproductsusingWeEnSemiconductorsproductsinordertoavoidadefaultoftheapplicationsandtheproductsoroftheapplicationorusebycustomer'sthirdpartycustomer(s).
WeEndoesnotacceptanyliabilityinthisrespect.
Limitingvalues—Stressaboveoneormorelimitingvalues(asdefinedintheAbsoluteMaximumRatingsSystemofIEC60134)willcausepermanentdamagetothedevice.
Limitingvaluesarestressratingsonlyand(proper)operationofthedeviceattheseoranyotherconditionsabovethosegivenintheRecommendedoperatingconditionssection(ifpresent)ortheCharacteristicssectionsofthisdocumentisnotwarranted.
Constantorrepeatedexposuretolimitingvalueswillpermanentlyandirreversiblyaffectthequalityandreliabilityofthedevice.
Nooffertosellorlicense—Nothinginthisdocumentmaybeinterpretedorconstruedasanoffertosellproductsthatisopenforacceptanceorthegrant,conveyanceorimplicationofanylicenseunderanycopyrights,patentsorotherindustrialorintellectualpropertyrights.
Exportcontrol—Thisdocumentaswellastheitem(s)describedhereinmaybesubjecttoexportcontrolregulations.
Exportmightrequireapriorauthorizationfromcompetentauthorities.
Non-automotivequalifiedproducts—UnlessthisdatasheetexpresslystatesthatthisspecificWeEnSemiconductorsproductisautomotivequalified,theproductisnotsuitableforautomotiveuse.
Itisneitherqualifiednortestedinaccordancewithautomotivetestingorapplicationrequirements.
WeEnSemiconductorsacceptsnoliabilityforinclusionand/oruseofnon-automotivequalifiedproductsinautomotiveequipmentorapplications.
Intheeventthatcustomerusestheproductfordesign-inanduseinautomotiveapplicationstoautomotivespecificationsandstandards,customer(a)shallusetheproductwithoutWeEnSemiconductors'warrantyoftheproductforsuchautomotiveapplications,useandspecifications,and(b)whenevercustomerusestheproductforautomotiveapplicationsbeyondWeEnSemiconductors'specificationssuchuseshallbesolelyatcustomer'sownrisk,and(c)customerfullyindemnifiesWeEnSemiconductorsforanyliability,damagesorfailedproductclaimsresultingfromcustomerdesignanduseoftheproductforautomotiveapplicationsbeyondWeEnSemiconductors'standardwarrantyandWeEnSemiconductors'productspecifications.
WeEnSemiconductorsBTA202X-600E3QHi-ComTriacBTA202X-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet7September201812/13Translations—Anon-English(translated)versionofadocumentisforreferenceonly.
TheEnglishversionshallprevailincaseofanydiscrepancybetweenthetranslatedandEnglishversions.
TrademarksNotice:Allreferencedbrands,productnames,servicenamesandtrademarksarethepropertyoftheirrespectiveowners.
WeEnSemiconductorsBTA202X-600E3QHi-ComTriacBTA202X-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet7September201813/1313.
Contents1.
Generaldescription.
12.
Featuresandbenefits.
13.
Applications.
14.
Quickreferencedata.
15.
Pinninginformation.
26.
Orderinginformation.
27.
Limitingvalues.
38.
Thermalcharacteristics.
69.
Isolationcharacteristics.
610.
Characteristics.
711.
Packageoutline.
1012.
Legalinformation.
11WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedFormoreinformation,pleasevisit:http://www.
ween-semi.
comForsalesofficeaddresses,pleasesendanemailto:salesaddresses@ween-semi.
comDateofrelease:7September2018MouserElectronicsAuthorizedDistributorClicktoViewPricing,Inventory,Delivery&LifecycleInformation:WeEnSemiconductors:BTA202X-600E,127
GeneraldescriptionPlanarpassivatedhighcommutationthreequadranttriacinaSOT186A(TO-220F)"fullpack"plasticpackage.
This"seriesE"triacbalancestherequirementsofcommutationperformanceandgatesensitivityandisintendedforinterfacingwithlowpowerdriversincludingmicrocontrollers.
2.
Featuresandbenefits3QtechnologyforimprovednoiseimmunityDirectinterfacingwithlowpowerdriversandmicrocontrollersGoodimmunitytofalseturn-onbydV/dtHighcommutationcapabilitywithsensitivegateHighvoltagecapabilityIsolatedmountingbasepackagePlanartechnologyforvoltageruggednessandreliabilitySensitivegateforeasylogicleveltriggeringTriggeringinthreequadrantsonly3.
ApplicationsGeneralpurposemotorcontrolsLargeandsmallappliances(WhiteGoods)Loadssuchascontactors,circuitbreakers,valves,dispensersanddoorlocksLower-powerhighlyinductive,resistiveandsafetyloads4.
QuickreferencedataTable1.
QuickreferencedataSymbolParameterConditionsMinTypMaxUnitVDRMrepetitivepeakoff-statevoltage--600VIT(RMS)RMSon-statecurrentfullsinewave;Th≤110°C;Fig.
1;Fig.
2;Fig.
3--2Afullsinewave;Tj(init)=25°C;tp=20ms;Fig.
4;Fig.
5--14AITSMnon-repetitivepeakon-statecurrentfullsinewave;Tj(init)=25°C;tp=16.
7ms--15.
4ATjjunctiontemperature--125°CStaticcharacteristicsIGTgatetriggercurrentVD=12V;IT=0.
1A;T2+G+;Tj=25°C;Fig.
70.
5-10mAWeEnSemiconductorsBTA202X-600E3QHi-ComTriacBTA202X-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet7September20182/13SymbolParameterConditionsMinTypMaxUnitVD=12V;IT=0.
1A;T2+G-;Tj=25°C;Fig.
70.
5-10mAVD=12V;IT=0.
1A;T2-G-;Tj=25°C;Fig.
70.
5-10mAIHholdingcurrentVD=12V;Tj=25°C;Fig.
9--10mAVTon-statevoltageIT=3A;Tj=25°C;Fig.
10-1.
632VDynamiccharacteristicsdVD/dtrateofriseofoff-statevoltageVDM=402V;Tj=125°C;(VDM=67%ofVDRM);exponentialwaveform;RGT1(ext)=220Ω-500-V/sVD=400V;Tj=125°C;IT(RMS)=2A;dVcom/dt=20V/s;(snubberlesscondition);gateopencircuit2--A/msdIcom/dtrateofchangeofcommutatingcurrentVD=400V;Tj=125°C;IT(RMS)=2A;dVcom/dt=10V/s;gateopencircuit2.
3--A/ms5.
PinninginformationTable2.
PinninginformationPinSymbolDescriptionSimplifiedoutlineGraphicsymbol1T1mainterminal12T2mainterminal23Ggatembn.
c.
mountingbase;isolated321mbTO-220F(SOT186A)sym051T1GT26.
OrderinginformationTable3.
OrderinginformationPackageTypenumberNameDescriptionVersionBTA202X-600ETO-220Fplasticsingle-endedpackage;isolatedheatsinkmounted;1mountinghole;3-leadTO-220"fullpack"SOT186AWeEnSemiconductorsBTA202X-600E3QHi-ComTriacBTA202X-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet7September20183/137.
LimitingvaluesTable4.
LimitingvaluesInaccordancewiththeAbsoluteMaximumRatingSystem(IEC60134).
SymbolParameterConditionsMinMaxUnitVDRMrepetitivepeakoff-statevoltage-600VIT(RMS)RMSon-statecurrentfullsinewave;Th≤110°C;Fig.
1;Fig.
2;Fig.
3-2Afullsinewave;Tj(init)=25°C;tp=20ms;Fig.
4;Fig.
5-14AITSMnon-repetitivepeakon-statecurrentfullsinewave;Tj(init)=25°C;tp=16.
7ms-15.
4AI2tI2tforfusingtp=10ms;SIN-0.
98AsdIT/dtrateofriseofon-statecurrentIG=0.
2A-100A/sIGMpeakgatecurrent-2APGMpeakgatepower-5WPG(AV)averagegatepoweroverany20msperiod-0.
5WTstgstoragetemperature-40150°CTjjunctiontemperature-125°C003aac111024681010-210-1110surgeduration(s)IT(RMS)(A)f=50Hz;Th=110°CFig.
1.
RMSon-statecurrentasafunctionofsurgeduration;maximumvalues003aac1090123-50050100150Th(°C)IT(RMS)(A)Fig.
2.
RMSon-statecurrentasafunctionofheatsinktemperature;maximumvaluesWeEnSemiconductorsBTA202X-600E3QHi-ComTriacBTA202X-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet7September20184/13003aac112012300.
40.
81.
21.
62IT(RMS)(A)Ptot(W)α=180°120°90°60°30°conductionangle(degrees)formfactora30609012018042.
82.
21.
91.
57αα=conductionanglea=formfactor=IT(RMS)/IT(AV)Fig.
3.
TotalpowerdissipationasafunctionofRMSon-statecurrent;maximumvalues003aac1131010210310-510-410-310-210-1tp(s)ITSM(A)(1)ITSMtITTj(init)=25°Cmaxtptp≤20ms(1)dIT/dtlimitFig.
4.
Non-repetitivepeakon-statecurrentasafunctionofpulsewidth;maximumvaluesWeEnSemiconductorsBTA202X-600E3QHi-ComTriacBTA202X-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet7September20185/13003aac110048121620110102103numberofcyclesITSM(A)ITSMtITTj(init)=25°Cmax1/ff=50HzFig.
5.
Non-repetitivepeakon-statecurrentasafunctionofthenumberofsinusoidalcurrentcycles;maximumvaluesWeEnSemiconductorsBTA202X-600E3QHi-ComTriacBTA202X-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet7September20186/138.
ThermalcharacteristicsTable5.
ThermalcharacteristicsSymbolParameterConditionsMinTypMaxUnitRth(j-h)thermalresistancefromjunctiontoheatsinkfullcycle;withheatsinkcompound;Fig.
6--5.
5K/WRth(j-a)thermalresistancefromjunctiontoambientfreeairinfreeair-55-K/W003aak516tp(s)10-511010-110-210-410-3110-110Zth(j-h)(K/W)10-2tpPtFig.
6.
Transientthermalimpedancefromjunctiontoheatsinkasafunctionofpulsewidth9.
IsolationcharacteristicsTable6.
IsolationcharacteristicsSymbolParameterConditionsMinTypMaxUnitVisol(RMS)RMSisolationvoltagefromallterminalstoexternalheatsink;sinusoidalwaveform;cleananddustfree;50Hz≤f≤60Hz;RH≤65%;Th=25°C--2500VCisolisolationcapacitancefrommainterminal2toexternalheatsink;f=1MHz-10-pFWeEnSemiconductorsBTA202X-600E3QHi-ComTriacBTA202X-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet7September20187/1310.
CharacteristicsTable7.
CharacteristicsSymbolParameterConditionsMinTypMaxUnitStaticcharacteristicsVD=12V;IT=0.
1A;T2+G+;Tj=25°C;Fig.
70.
5-10mAVD=12V;IT=0.
1A;T2+G-;Tj=25°C;Fig.
70.
5-10mAIGTgatetriggercurrentVD=12V;IT=0.
1A;T2-G-;Tj=25°C;Fig.
70.
5-10mAVD=12V;IG=0.
1A;T2+G+;Tj=25°C;Fig.
8--12mAVD=12V;IG=0.
1A;T2+G-;Tj=25°C;Fig.
8--20mAILlatchingcurrentVD=12V;IG=0.
1A;T2-G-;Tj=25°C;Fig.
8--12mAIHholdingcurrentVD=12V;Tj=25°C;Fig.
9--10mAVTon-statevoltageIT=3A;Tj=25°C;Fig.
10-1.
632VVD=12V;IT=0.
1A;Tj=25°C;Fig.
11-0.
71VVGTgatetriggervoltageVD=400V;IT=0.
1A;Tj=125°C;Fig.
110.
20.
3-VIDoff-statecurrentVD=600V;Tj=125°C-0.
10.
5mADynamiccharacteristicsdVD/dtrateofriseofoff-statevoltageVDM=402V;Tj=125°C;(VDM=67%ofVDRM);exponentialwaveform;RGT1(ext)=220Ω-500-V/sVD=400V;Tj=125°C;IT(RMS)=2A;dVcom/dt=20V/s;(snubberlesscondition);gateopencircuit2--A/msdIcom/dtrateofchangeofcommutatingcurrentVD=400V;Tj=125°C;IT(RMS)=2A;dVcom/dt=10V/s;gateopencircuit2.
3--A/msWeEnSemiconductorsBTA202X-600E3QHi-ComTriacBTA202X-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet7September20188/13IGTIGT(25°C)Tj(°C)-500150100501230003aaa959(1)(2)(3)(1)(2)(3)(1)T2-G-(2)T2+G-(3)T2+G+Fig.
7.
NormalizedgatetriggercurrentasafunctionofjunctiontemperatureTj(°C)-50150100050003aak5101230ILIL(25°C)Fig.
8.
NormalizedlatchingcurrentasafunctionofjunctiontemperatureTj(°C)-50150100050003aak5111230IHIH(25°C)Fig.
9.
Normalizedholdingcurrentasafunctionofjunctiontemperature003aac10801230123VT(V)IT(A)(1)(2)(3)Vo=0.
9V;Rs=0.
267(1)Tj=125°C;typicalvalues(2)Tj=125°C;maximumvalues(3)Tj=25°C;maximumvaluesFig.
10.
On-statecurrentasafunctionofon-statevoltageWeEnSemiconductorsBTA202X-600E3QHi-ComTriacBTA202X-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet7September20189/13Tj(°C)-50150100050003aak5120.
81.
21.
60.
4VGTVGT(25°C)Fig.
11.
NormalizedgatetriggervoltageasafunctionofjunctiontemperatureWeEnSemiconductorsBTA202X-600E3QHi-ComTriacBTA202X-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet7September201810/1311.
PackageoutlineFig.
12.
PackageoutlineTO-220F(SOT186A)WeEnSemiconductorsBTA202X-600E3QHi-ComTriacBTA202X-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet7September201811/1312.
LegalinformationDatasheetstatusDocumentstatus[1][2]Productstatus[3]DefinitionObjective[short]datasheetDevelopmentThisdocumentcontainsdatafromtheobjectivespecificationforproductdevelopment.
Preliminary[short]datasheetQualificationThisdocumentcontainsdatafromthepreliminaryspecification.
Product[short]datasheetProductionThisdocumentcontainstheproductspecification.
[1]Pleaseconsultthemostrecentlyissueddocumentbeforeinitiatingorcompletingadesign.
[2]Theterm'shortdatasheet'isexplainedinsection"Definitions".
[3]Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.
ThelatestproductstatusinformationisavailableontheInternetatURLhttp://www.
ween-semi.
com.
DefinitionsDraft—Thedocumentisadraftversiononly.
Thecontentisstillunderinternalreviewandsubjecttoformalapproval,whichmayresultinmodificationsoradditions.
WeEnSemiconductorsdoesnotgiveanyrepresentationsorwarrantiesastotheaccuracyorcompletenessofinformationincludedhereinandshallhavenoliabilityfortheconsequencesofuseofsuchinformation.
Shortdatasheet—Ashortdatasheetisanextractfromafulldatasheetwiththesameproducttypenumber(s)andtitle.
Ashortdatasheetisintendedforquickreferenceonlyandshouldnotbereliedupontocontaindetailedandfullinformation.
Fordetailedandfullinformationseetherelevantfulldatasheet,whichisavailableonrequestviathelocalWeEnSemiconductorssalesoffice.
Incaseofanyinconsistencyorconflictwiththeshortdatasheet,thefulldatasheetshallprevail.
Productspecification—TheinformationanddataprovidedinaProductdatasheetshalldefinethespecificationoftheproductasagreedbetweenWeEnSemiconductorsanditscustomer,unlessWeEnSemiconductorsandcustomerhaveexplicitlyagreedotherwiseinwriting.
Innoeventhowever,shallanagreementbevalidinwhichtheWeEnSemiconductorsproductisdeemedtoofferfunctionsandqualitiesbeyondthosedescribedintheProductdatasheet.
DisclaimersLimitedwarrantyandliability—Informationinthisdocumentisbelievedtobeaccurateandreliable.
However,WeEnSemiconductorsdoesnotgiveanyrepresentationsorwarranties,expressedorimplied,astotheaccuracyorcompletenessofsuchinformationandshallhavenoliabilityfortheconsequencesofuseofsuchinformation.
WeEnSemiconductorstakesnoresponsibilityforthecontentinthisdocumentifprovidedbyaninformationsourceoutsideofWeEnSemiconductors.
InnoeventshallWeEnSemiconductorsbeliableforanyindirect,incidental,punitive,specialorconsequentialdamages(including-withoutlimitation-lostprofits,lostsavings,businessinterruption,costsrelatedtotheremovalorreplacementofanyproductsorreworkcharges)whetherornotsuchdamagesarebasedontort(includingnegligence),warranty,breachofcontractoranyotherlegaltheory.
Notwithstandinganydamagesthatcustomermightincurforanyreasonwhatsoever,WeEnSemiconductors'aggregateandcumulativeliabilitytowardscustomerfortheproductsdescribedhereinshallbelimitedinaccordancewiththeTermsandconditionsofcommercialsaleofWeEnSemiconductors.
Righttomakechanges—WeEnSemiconductorsreservestherighttomakechangestoinformationpublishedinthisdocument,includingwithoutlimitationspecificationsandproductdescriptions,atanytimeandwithoutnotice.
Thisdocumentsupersedesandreplacesallinformationsuppliedpriortothepublicationhereof.
Suitabilityforuse—WeEnSemiconductorsproductsarenotdesigned,authorizedorwarrantedtobesuitableforuseinlifesupport,life-criticalorsafety-criticalsystemsorequipment,norinapplicationswherefailureormalfunctionofanWeEnSemiconductorsproductcanreasonablybeexpectedtoresultinpersonalinjury,deathorseverepropertyorenvironmentaldamage.
WeEnSemiconductorsanditssuppliersacceptnoliabilityforinclusionand/oruseofWeEnSemiconductorsproductsinsuchequipmentorapplicationsandthereforesuchinclusionand/oruseisatthecustomer'sownrisk.
Quickreferencedata—TheQuickreferencedataisanextractoftheproductdatagivenintheLimitingvaluesandCharacteristicssectionsofthisdocument,andassuchisnotcomplete,exhaustiveorlegallybinding.
Applications—Applicationsthataredescribedhereinforanyoftheseproductsareforillustrativepurposesonly.
WeEnSemiconductorsmakesnorepresentationorwarrantythatsuchapplicationswillbesuitableforthespecifiedusewithoutfurthertestingormodification.
CustomersareresponsibleforthedesignandoperationoftheirapplicationsandproductsusingWeEnSemiconductorsproducts,andWeEnSemiconductorsacceptsnoliabilityforanyassistancewithapplicationsorcustomerproductdesign.
Itiscustomer'ssoleresponsibilitytodeterminewhethertheWeEnSemiconductorsproductissuitableandfitforthecustomer'sapplicationsandproductsplanned,aswellasfortheplannedapplicationanduseofcustomer'sthirdpartycustomer(s).
Customersshouldprovideappropriatedesignandoperatingsafeguardstominimizetherisksassociatedwiththeirapplicationsandproducts.
WeEnSemiconductorsdoesnotacceptanyliabilityrelatedtoanydefault,damage,costsorproblemwhichisbasedonanyweaknessordefaultinthecustomer'sapplicationsorproducts,ortheapplicationorusebycustomer'sthirdpartycustomer(s).
Customerisresponsiblefordoingallnecessarytestingforthecustomer'sapplicationsandproductsusingWeEnSemiconductorsproductsinordertoavoidadefaultoftheapplicationsandtheproductsoroftheapplicationorusebycustomer'sthirdpartycustomer(s).
WeEndoesnotacceptanyliabilityinthisrespect.
Limitingvalues—Stressaboveoneormorelimitingvalues(asdefinedintheAbsoluteMaximumRatingsSystemofIEC60134)willcausepermanentdamagetothedevice.
Limitingvaluesarestressratingsonlyand(proper)operationofthedeviceattheseoranyotherconditionsabovethosegivenintheRecommendedoperatingconditionssection(ifpresent)ortheCharacteristicssectionsofthisdocumentisnotwarranted.
Constantorrepeatedexposuretolimitingvalueswillpermanentlyandirreversiblyaffectthequalityandreliabilityofthedevice.
Nooffertosellorlicense—Nothinginthisdocumentmaybeinterpretedorconstruedasanoffertosellproductsthatisopenforacceptanceorthegrant,conveyanceorimplicationofanylicenseunderanycopyrights,patentsorotherindustrialorintellectualpropertyrights.
Exportcontrol—Thisdocumentaswellastheitem(s)describedhereinmaybesubjecttoexportcontrolregulations.
Exportmightrequireapriorauthorizationfromcompetentauthorities.
Non-automotivequalifiedproducts—UnlessthisdatasheetexpresslystatesthatthisspecificWeEnSemiconductorsproductisautomotivequalified,theproductisnotsuitableforautomotiveuse.
Itisneitherqualifiednortestedinaccordancewithautomotivetestingorapplicationrequirements.
WeEnSemiconductorsacceptsnoliabilityforinclusionand/oruseofnon-automotivequalifiedproductsinautomotiveequipmentorapplications.
Intheeventthatcustomerusestheproductfordesign-inanduseinautomotiveapplicationstoautomotivespecificationsandstandards,customer(a)shallusetheproductwithoutWeEnSemiconductors'warrantyoftheproductforsuchautomotiveapplications,useandspecifications,and(b)whenevercustomerusestheproductforautomotiveapplicationsbeyondWeEnSemiconductors'specificationssuchuseshallbesolelyatcustomer'sownrisk,and(c)customerfullyindemnifiesWeEnSemiconductorsforanyliability,damagesorfailedproductclaimsresultingfromcustomerdesignanduseoftheproductforautomotiveapplicationsbeyondWeEnSemiconductors'standardwarrantyandWeEnSemiconductors'productspecifications.
WeEnSemiconductorsBTA202X-600E3QHi-ComTriacBTA202X-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet7September201812/13Translations—Anon-English(translated)versionofadocumentisforreferenceonly.
TheEnglishversionshallprevailincaseofanydiscrepancybetweenthetranslatedandEnglishversions.
TrademarksNotice:Allreferencedbrands,productnames,servicenamesandtrademarksarethepropertyoftheirrespectiveowners.
WeEnSemiconductorsBTA202X-600E3QHi-ComTriacBTA202X-600EAllinformationprovidedinthisdocumentissubjecttolegaldisclaimers.
WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedProductdatasheet7September201813/1313.
Contents1.
Generaldescription.
12.
Featuresandbenefits.
13.
Applications.
14.
Quickreferencedata.
15.
Pinninginformation.
26.
Orderinginformation.
27.
Limitingvalues.
38.
Thermalcharacteristics.
69.
Isolationcharacteristics.
610.
Characteristics.
711.
Packageoutline.
1012.
Legalinformation.
11WeEnSemiconductorsCo.
,Ltd.
2018.
AllrightsreservedFormoreinformation,pleasevisit:http://www.
ween-semi.
comForsalesofficeaddresses,pleasesendanemailto:salesaddresses@ween-semi.
comDateofrelease:7September2018MouserElectronicsAuthorizedDistributorClicktoViewPricing,Inventory,Delivery&LifecycleInformation:WeEnSemiconductors:BTA202X-600E,127
Vinahost - 越南VPS主机商月6美元 季付以上赠送时长最多半年
Vinahost，这个主机商还是第一次介绍到，翻看商家的介绍信息，是一家成立于2008年的老牌越南主机商，业务涵盖网站设计、域名、SSL证书、电子邮箱、虚拟主机、越南VPS、云计算、越南服务器出租以及设备托管等，机房主要在越南胡志明市的Viettle和VNPT数据中心，其中VNPT数据中心对于国内是三网直连，速度优。类似很多海外主机商一样，希望拓展自己的业务，必须要降价优惠或者增加机房迎合需求用户...
BuyVM新设立的迈阿密机房速度怎么样？简单的测评速度性能
BuyVM商家算是一家比较老牌的海外主机商，公司设立在加拿大，曾经是低价便宜VPS主机的代表，目前为止有提供纽约、拉斯维加斯、卢森堡机房，以及新增加的美国迈阿密机房。如果我们有需要选择BuyVM商家的机器需要注意的是注册信息的时候一定要规范，否则很容易出现欺诈订单，甚至你开通后都有可能被禁止账户，也是这个原因，曾经被很多人吐槽的。这里我们简单的对于BuyVM商家新增加的迈阿密机房进行简单的测评。如...
青果云（590元/年)，美国vps洛杉矶CN2 GIA主机测评 1核1G 10M
青果网络QG.NET定位为高效多云管理服务商，已拥有工信部颁发的全网云计算/CDN/IDC/ISP/IP-VPN等多项资质，是CNNIC/APNIC联盟的成员之一，2019年荣获国家高薪技术企业、福建省省级高新技术企业双项荣誉。那么青果网络作为国内主流的IDC厂商之一，那么其旗下美国洛杉矶CN2 GIA线路云服务器到底怎么样？官方网站：https://www.qg.net/CPU内存系统盘流量宽带...
bt封杀为你推荐
-
中国论坛大全有谁知道国内人气最高的论坛排行榜？硬盘人电脑对人有多大辐射？怎么升级ios6苹果iPhone6怎么升级系统商标注册查询官网怎么查商标有没有注册宕机宕机是什么意思ios系统ios是什么意思 ios系统是什么iphone6上市时间苹果6什么时候在中国大陆上市安全漏洞什么是安全漏洞攻击？？分词技术怎样做好百度分词技术和长尾词优化网站优化方案网站优化方案如何写？