outputps半透明
ps半透明 时间:2021-02-22 阅读:()
Themarkshowsmajorrevisedpoints.
Therevisedpointscanbeeasilysearchedbycopyingan""inthePDFfileandspecifyingitinthe"Findwhat:"field.
1.
Anode2.
Cathode3.
Emitter4.
CollectorPINCONNECTION(TopView)1243DESCRIPTIONThePS2562-1isopticallycoupledisolatorscontainingaGaAslightemittingdiodeandanNPNsilicondarlingtonconnectedphototransistor.
ThePS2562-1isinaplasticDIP(DualIn-linePackage)andthePS2562L-1isleadbendingtype(Gull-wing)forsurfacemount.
ThePS2562L1-1isleadbendingtypeforlongcreepagedistance.
ThePS2562L2-1isleadbendingtypeforlongcreepagedistance(Gull-wing)forsurfacemount.
FEATURESHighisolationvoltage(BV=5000Vr.
m.
s.
)Highcurrenttransferratio(CTR=2000%TYP.
)High-speedswitching(tr,tf=100μsTYP.
)Orderingnumberoftapeproduct:PS2562L-1-F3:2000pcs/reel:PS2562L2-1-E3:1000pcs/reelSafetystandardsULapproved:No.
E72422CSAapproved:No.
CA101391(CA5A,CAN/CSA-C22.
260065,60950)BSIapproved:No.
7112/7420SEMKOapproved:No.
903238NEMKOapproved:No.
P09210868DEMKOapproved:No.
314999FIMKOapproved:No.
FI25119DINEN60747-5-2(VDE0884Part2)approved:No.
40008862(option)APPLICATIONSPowersupplyTelephone/FAX.
FA/OAequipmentProgrammablelogiccontrollerDATASHEETTheinformationinthisdocumentissubjecttochangewithoutnotice.
Beforeusingthisdocument,pleaseconfirmthatthisisthelatestversion.
HIGHISOLATIONVOLTAGEDARLINGTONTRANSISTORTYPEMULTIPHOTOCOUPLERSERIESNEPOCSeriesDocumentNo.
PN10235EJ04V0DS(4thedition)DatePublishedNovember2009NSPrintedinJapanPHOTOCOUPLERPS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1PACKAGEDIMENSIONS(UNIT:mm)DIPTypeLongCreepageDistancePS2562-13.
5±0.
34.
15±0.
43.
2±0.
42.
541.
25±0.
150.
50±0.
100.
25M4.
6±0.
356.
5±0.
50to15°7.
620.
25+0.
1–0.
051243PS2562L1-10to15°0.
25+0.
1–0.
0510.
162.
540.
25M0.
50±0.
11.
25±0.
153.
85±0.
43.
15±0.
353.
5±0.
36.
5±0.
54.
6±0.
351243LeadBendingType(Gull-Wing)LongCreepageDistance(Gull-Wing)PS2562L-10.
25M4.
6±0.
356.
5±0.
53.
5±0.
32.
541.
25±0.
150.
9±0.
259.
60±0.
40.
25+0.
1–0.
050.
1+0.
1–0.
051243PS2562L2-10.
25M2.
541.
25±0.
153.
5±0.
36.
5±0.
54.
6±0.
3511.
8+0.
2–0.
50.
25+0.
1–0.
050.
25±0.
20.
9±0.
2510.
1612430.
150.
25PHOTOCOUPLERCONSTRUCTIONParameterUnit(MIN.
)AirDistance7mmOuterCreepageDistance7mmInnerCreepageDistance4mmIsolationThickness0.
4mmDataSheetPN10235EJ04V0DS2PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1MARKINGEXAMPLE2562MJ931JAssemblyLotWeekAssembledYearAssembled(Last1Digit)In-houseCodeCTRRankCodeNo.
1pinMarkPackageNewPKGMadeinJapanMJ931DataSheetPN10235EJ04V0DS3PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1ORDERINGINFORMATIONPartNumberOrderNumberSolderPlatingSpecificationPackingStyleSafetyStandardApprovalApplicationPartNumber*1PS2562-1PS2562-1-APb-FreeMagazinecase100pcsStandardproductsPS2562-1PS2562L-1PS2562L-1-A(UL,CSA,BSI,PS2562L1-1PS2562L1-1-ASEMKO,NEMKO,PS2562L2-1PS2562L2-1-ADEMKO,FIMKOPS2562L-1-F3PS2562L-1-F3-AEmbossedTape2000pcs/reelapproved)PS2562L2-1-E3PS2562L2-1-E3-AEmbossedTape1000pcs/reelPS2562-1-VPS2562-1-V-AMagazinecase100pcsDINEN60747-5-2PS2562L-1-VPS2562L-1-V-A(VDE0884Part2)PS2562L1-1-VPS2562L1-1-V-AapprovedproductsPS2562L2-1-VPS2562L2-1-V-A(option)PS2562L-1-V-F3PS2562L-1-V-F3-AEmbossedTape2000pcs/reelPS2562L2-1-V-E3PS2562L2-1-V-E3-AEmbossedTape1000pcs/reel*1FortheapplicationoftheSafetyStandard,followingpartnumbershouldbeused.
DataSheetPN10235EJ04V0DS4PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1ABSOLUTEMAXIMUMRATINGS(TA=25°C,unlessotherwisespecified)ParameterSymbolRatingsUnitDiodeReverseVoltageVR6VForwardCurrent(DC)IF80mAPowerDissipationDeratingΔPD/°C1.
5mW/°CPowerDissipationPD150mWPeakForwardCurrent*1IFP1ATransistorCollectortoEmitterVoltageVCEO40VEmittertoCollectorVoltageVECO6VCollectorCurrentIC200mAPowerDissipationDeratingΔPC/°C2.
0mW/°CPowerDissipationPC200mWIsolationVoltage*2BV5000Vr.
m.
s.
OperatingAmbientTemperatureTA–55to+100°CStorageTemperatureTstg–55to+150°C*1PW=100μs,DutyCycle=1%*2ACvoltagefor1minuteatTA=25°C,RH=60%betweeninputandoutput.
Pins1-2shortedtogether,3-4shortedtogether.
DataSheetPN10235EJ04V0DS5PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1ELECTRICALCHARACTERISTICS(TA=25°C)ParameterSymbolConditionsMIN.
TYP.
MAX.
UnitDiodeForwardVoltageVFIF=10mA1.
171.
4VReverseCurrentIRVR=5V5μATerminalCapacitanceCtV=0V,f=1.
0MHz50pFTransistorCollectortoEmitterDarkCurrentICEOVCE=40V,IF=0mA400nACoupledCurrentTransferRatio(IC/IF)*1CTRIF=1mA,VCE=2VDC2002000%CollectorSaturationVoltageVCE(sat)IF=1mA,IC=2mA1.
0VIsolationResistanceRI-OVI-O=1.
0kVDC1011ΩIsolationCapacitanceCI-OV=0V,f=1.
0MHz0.
5pFRiseTime*2trVCC=10V,IC=10mA,RL=100Ω100μsFallTime*2tf100*1CTRrankK:2000to(%)L:700to3400(%)M:200to1000(%)*2TestcircuitforswitchingtimeVCCVOUTRL=100Ω50ΩIFPulseInputPW=1msDutyCycle=1/10DataSheetPN10235EJ04V0DS6PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1TYPICALCHARACTERISTICS(TA=25°C,unlessotherwisespecified)1501005002550751001251500.
50.
11510501000.
70.
80.
91.
01.
11.
21.
31.
41.
50204060801001201401602468105mA2mA1mAIF=0.
5mA101100100010000–50–2502550751000.
20.
51510200500.
41000.
60.
81.
01.
21.
41.
65mA2mA1mA0.
5mAIF=0.
1mA0.
2mA1.
5mW/°C0°C–25°C–55°CVCE=2V5V10V24V40V+60°C+25°CTA=+100°CDiodePowerDissipationPD(mW)TransistorPowerDissipationPC(mW)AmbientTemperatureTA(°C)ForwardCurrentIF(mA)ForwardVoltageVF(V)CollectorCurrentIC(mA)CollectortoEmitterVoltageVCE(V)CollectortoEmitterDarkCurrentICEO(nA)CollectorSaturationVoltageVCE(sat)(V)AmbientTemperatureTA(°C)AmbientTemperatureTA(°C)DIODEPOWERDISSIPATIONvs.
AMBIENTTEMPERATURETRANSISTORPOWERDISSIPATIONvs.
AMBIENTTEMPERATUREFORWARDCURRENTvs.
FORWARDVOLTAGECOLLECTORCURRENTvs.
COLLECTORTOEMITTERVOLTAGECOLLECTORTOEMITTERDARKCURRENTvs.
AMBIENTTEMPERATURECOLLECTORCURRENTvs.
COLLECTORSATURATIONVOLTAGECollectorCurrentIC(mA)1501005002550751001251502mW/°C200RemarkThegraphsindicatenominalcharacteristics.
DataSheetPN10235EJ04V0DS7PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-11.
4251.
21.
00.
80.
60.
40.
2–500–255075100800001000200030004000500060007000VCE=2V0.
10.
51510301000500100501052100505001k5kVCC=5V,IC=2mA,CTR=2280%tf500501k3001010010005000100005k10k50k5100.
20.
5122050100200IF=1mA,VCE=2V–20–15–10–50150020002500300005001000VCE=2V5010010500RL=100ΩVCC=5V,IF=1mA,CTR=2280%tdts30500100ktftstrtdtrNormalizedto1.
0atTA=25°C,IF=1mA,VCE=2VForwardCurrentIF(mA)AmbientTemperatureTA(°C)LoadResistanceRL(Ω)Frequencyf(kHz)NormalizedCurrentTransferRatioCTRCurrentTransferRatioCTR(%)NormalizedGainGVLoadResistanceRL(Ω)SwitchingTimet(s)μNORMALIZEDCURRENTTRANSFERRATIOvs.
AMBIENTTEMPERATURECURRENTTRANSFERRATIOvs.
FORWARDCURRENTSWITCHINGTIMEvs.
LOADRESISTANCESWITCHINGTIMEvs.
LOADRESISTANCEFREQUENCYRESPONSESwitchingTimet(s)μForwardCurrentIF(A)CurrentTransferRatioCTR(%)CURRENTTRANSFERRATIOvs.
FORWARDCURRENTμSampleABCDSampleABCDRemarkThegraphsindicatenominalcharacteristics.
DataSheetPN10235EJ04V0DS8PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1101021031041051060.
600.
20.
40.
81.
01.
2TA=25°CTA=60°CTime(Hr)CTR(RelativeValue)LONGTERMCTRDEGRADATIONIF=1mARemarkThegraphindicatesnominalcharacteristics.
DataSheetPN10235EJ04V0DS9PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1TAPINGSPECIFICATIONS(UNIT:mm)TapeDirectionPS2562L-1-F3OutlineandDimensions(Tape)1.
55±0.
12.
0±0.
14.
0±0.
11.
75±0.
14.
5MAX.
4.
0±0.
10.
45.
3±0.
18.
0±0.
17.
5±0.
116.
0±0.
310.
3±0.
11.
5+0.
1–0OutlineandDimensions(Reel)Packing:2000pcs/reel2.
0±0.
5R1.
013.
0±0.
2φ21.
0±0.
8φ330±2.
0100±1.
02.
0±0.
5φφ15.
9to19.
4Outeredgeofflang21.
5±1.
017.
5±1.
0DataSheetPN10235EJ04V0DS10PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1TapeDirectionPS2562L2-1-E3OutlineandDimensions(Tape)2.
05±0.
12.
0±0.
14.
0±0.
11.
55±0.
11.
75±0.
14.
4±0.
212.
35±0.
150.
3811.
5±0.
124.
0±0.
36.
6±0.
212.
0±0.
1OutlineandDimensions(Reel)Packing:1000pcs/reel2.
0±0.
5R1.
013.
0±0.
2φ21.
0±0.
8φ330±2.
0φ100±1.
0φ2.
0±0.
529.
5±1.
025.
5±1.
023.
9to27.
4OuteredgeofflangeDataSheetPN10235EJ04V0DS11PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1NOTESONHANDLING1.
Recommendedsolderingconditions(1)InfraredreflowsolderingPeakreflowtemperature260°Corbelow(packagesurfacetemperature)Timeofpeakreflowtemperature10secondsorlessTimeoftemperaturehigherthan220°C60secondsorlessTimetopreheattemperaturefrom120to180°C120±30sNumberofreflowsThreeFluxRosinfluxcontainingsmallamountofchlorine(Thefluxwithamaximumchlorinecontentof0.
2Wt%isrecommended.
)120±30s(preheating)220°C180°CPackageSurfaceTemperatureT(°C)Time(s)RecommendedTemperatureProfileofInfraredReflow(heating)to10sto60s260°CMAX.
120°C(2)WavesolderingTemperature260°Corbelow(moltensoldertemperature)Time10secondsorlessPreheatingconditions120°Corbelow(packagesurfacetemperature)NumberoftimesOne(Allowedtobedippedinsolderincludingplasticmoldportion.
)FluxRosinfluxcontainingsmallamountofchlorine(Thefluxwithamaximumchlorinecontentof0.
2Wt%isrecommended.
)(3)SolderingbysolderingironPeaktemperature(leadparttemperature)350°CorbelowTime(eachpins)3secondsorlessFluxRosinfluxcontainingsmallamountofchlorine(Thefluxwithamaximumchlorinecontentof0.
2Wt%isrecommended.
)(a)Solderingofleadsshouldbemadeatthepoint1.
5to2.
0mmfromtherootofthelead.
(b)Pleasebesurethatthetemperatureofthepackagewouldnotbeheatedover100°C.
DataSheetPN10235EJ04V0DS12PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1(4)CautionsFluxesAvoidremovingtheresidualfluxwithfreon-basedandchlorine-basedcleaningsolvent.
2.
CautionsregardingnoiseBeawarethatwhenvoltageisappliedsuddenlybetweenthephotocoupler'sinputandoutputorbetweencollector-emittersatstartup,theoutputtransistormayentertheonstate,evenifthevoltageiswithintheabsolutemaximumratings.
3.
Measurementconditionsofcurrenttransferratios(CTR),whichdifferaccordingtophotocouplerCheckthesettingvaluesbeforeuse,sincetheforwardcurrentconditionsatCTRmeasurementdifferaccordingtoproduct.
Whenusingproductsotherthanatthespecifiedforwardcurrent,thecharacteristicscurvesmaydifferfromthestandardcurvesduetoCTRvaluevariationsorthelike.
Therefore,checkthecharacteristicsundertheactualoperatingconditionsandthoroughlytakevariationsorthelikeintoconsiderationbeforeuse.
USAGECAUTIONS1.
Protectagainststaticelectricitywhenhandling.
2.
Avoidstorageatahightemperatureandhighhumidity.
DataSheetPN10235EJ04V0DS13PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1SPECIFICATIONOFVDEMARKSLICENSEDOCUMENTParameterSymbolSpeckUnitClimatictestclass(IEC60068-1/DINEN60068-1)55/100/21DielectricstrengthmaximumoperatingisolationvoltageTestvoltage(partialdischargetestprocedureafortypetestandrandomtest)Upr=1.
5*UIORM,PdDataSheetPN10235EJ04V0DS14PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1CautionGaAsProductsThisproductusesgalliumarsenide(GaAs).
GaAsvaporandpowderarehazardoustohumanhealthifinhaledoringested,sopleaseobservethefollowingpoints.
Followrelatedlawsandordinanceswhendisposingoftheproduct.
Iftherearenoapplicablelawsand/orordinances,disposeoftheproductasrecommendedbelow.
1.
Commissionadisposalcompanyableto(withalicenseto)collect,transportanddisposeofmaterialsthatcontainarsenicandothersuchindustrialwastematerials.
2.
Excludetheproductfromgeneralindustrialwasteandhouseholdgarbage,andensurethattheproductiscontrolled(asindustrialwastesubjecttospecialcontrol)upuntilfinaldisposal.
Donotburn,destroy,cut,crush,orchemicallydissolvetheproduct.
Donotlicktheproductorinanywayallowittoenterthemouth.
PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1NOTICE1.
Descriptionsofcircuits,softwareandotherrelatedinformationinthisdocumentareprovidedonlytoillustratetheoperationofsemiconductorproductsandapplicationexamples.
Youarefullyresponsiblefortheincorporationofthesecircuits,software,andinformationinthedesignofyourequipment.
CaliforniaEasternLaboratoriesandRenesasElectronicsassumesnoresponsibilityforanylossesincurredbyyouorthirdpartiesarisingfromtheuseofthesecircuits,software,orinformation.
2.
CaliforniaEasternLaboratorieshasusedreasonablecareinpreparingtheinformationincludedinthisdocument,butCaliforniaEasternLaboratoriesdoesnotwarrantthatsuchinformationiserrorfree.
CaliforniaEasternLaboratoriesandRenesasElectronicsassumesnoliabilitywhatsoeverforanydamagesincurredbyyouresultingfromerrorsinoromissionsfromtheinformationincludedherein.
3.
CaliforniaEasternLaboratoriesandRenesasElectronicsdonotassumeanyliabilityforinfringementofpatents,copyrights,orotherintellectualpropertyrightsofthirdpartiesbyorarisingfromtheuseofRenesasElectronicsproductsortechnicalinformationdescribedinthisdocument.
Nolicense,express,impliedorotherwise,isgrantedherebyunderanypatents,copyrightsorotherintellectualpropertyrightsofCaliforniaEasternLaboratoriesorRenesasElectronicsorothers.
4.
Youshouldnotalter,modify,copy,orotherwisemisappropriateanyRenesasElectronicsproduct,whetherinwholeorinpart.
CaliforniaEasternLaboratoriesandRenesasElectronicsassumenoresponsibilityforanylossesincurredbyyouorthirdpartiesarisingfromsuchalteration,modification,copyorotherwisemisappropriationofRenesasElectronicsproduct.
5.
RenesasElectronicsproductsareclassifiedaccordingtothefollowingtwoqualitygrades:"Standard"and"HighQuality".
TherecommendedapplicationsforeachRenesasElectronicsproductdependsontheproduct'squalitygrade,asindicatedbelow.
"Standard":Computers;officeequipment;communicationsequipment;testandmeasurementequipment;audioandvisualequipment;homeelectronicappliances;machinetools;personalelectronicequipment;andindustrialrobotsetc.
"HighQuality":Transportationequipment(automobiles,trains,ships,etc.
);trafficcontrolsystems;anti-disastersystems;anti-crimesystems;andsafetyequipmentetc.
RenesasElectronicsproductsareneitherintendednorauthorizedforuseinproductsorsystemsthatmayposeadirectthreattohumanlifeorbodilyinjury(artificiallifesupportdevicesorsystems,surgicalimplantationsetc.
),ormaycauseseriouspropertydamages(nuclearreactorcontrolsystems,militaryequipmentetc.
).
YoumustcheckthequalitygradeofeachRenesasElectronicsproductbeforeusingitinaparticularapplication.
YoumaynotuseanyRenesasElectronicsproductforanyapplicationforwhichitisnotintended.
CaliforniaEasternLaboratoriesandRenesasElectronicsshallnotbeinanywayliableforanydamagesorlossesincurredbyyouorthirdpartiesarisingfromtheuseofanyRenesasElectronicsproductforwhichtheproductisnotintendedbyCaliforniaEasternLaboratoriesorRenesasElectronics.
6.
YoushouldusetheRenesasElectronicsproductsdescribedinthisdocumentwithintherangespecifiedbyCaliforniaEasternLaboratories,especiallywithrespecttothemaximumrating,operatingsupplyvoltagerange,movementpowervoltagerange,heatradiationcharacteristics,installationandotherproductcharacteristics.
CaliforniaEasternLaboratoriesshallhavenoliabilityformalfunctionsordamagesarisingoutoftheuseofRenesasElectronicsproductsbeyondsuchspecifiedranges.
7.
AlthoughRenesasElectronicsendeavorstoimprovethequalityandreliabilityofitsproducts,semiconductorproductshavespecificcharacteristicssuchastheoccurrenceoffailureatacertainrateandmalfunctionsundercertainuseconditions.
Further,RenesasElectronicsproductsarenotsubjecttoradiationresistancedesign.
Pleasebesuretoimplementsafetymeasurestoguardthemagainstthepossibilityofphysicalinjury,andinjuryordamagecausedbyfireintheeventofthefailureofaRenesasElectronicsproduct,suchassafetydesignforhardwareandsoftwareincludingbutnotlimitedtoredundancy,firecontrolandmalfunctionprevention,appropriatetreatmentforagingdegradationoranyotherappropriatemeasures.
Becausetheevaluationofmicrocomputersoftwarealoneisverydifficult,pleaseevaluatethesafetyofthefinalproductsorsystemsmanufacturedbyyou.
8.
PleasecontactaCaliforniaEasternLaboratoriessalesofficefordetailsastoenvironmentalmatterssuchastheenvironmentalcompatibilityofeachRenesasElectronicsproduct.
PleaseuseRenesasElectronicsproductsincompliancewithallapplicablelawsandregulationsthatregulatetheinclusionoruseofcontrolledsubstances,includingwithoutlimitation,theEURoHSDirective.
CaliforniaEasternLaboratoriesandRenesasElectronicsassumenoliabilityfordamagesorlossesoccurringasaresultofyournoncompliancewithapplicablelawsandregulations.
9.
RenesasElectronicsproductsandtechnologymaynotbeusedfororincorporatedintoanyproductsorsystemswhosemanufacture,use,orsaleisprohibitedunderanyapplicabledomesticorforeignlawsorregulations.
YoushouldnotuseRenesasElectronicsproductsortechnologydescribedinthisdocumentforanypurposerelatingtomilitaryapplicationsorusebythemilitary,includingbutnotlimitedtothedevelopmentofweaponsofmassdestruction.
WhenexportingtheRenesasElectronicsproductsortechnologydescribedinthisdocument,youshouldcomplywiththeapplicableexportcontrollawsandregulationsandfollowtheproceduresrequiredbysuchlawsandregulations.
10.
ItistheresponsibilityofthebuyerordistributorofCaliforniaEasternLaboratories,whodistributes,disposesof,orotherwiseplacestheRenesasElectronicsproductwithathirdparty,tonotifysuchthirdpartyinadvanceofthecontentsandconditionssetforthinthisdocument,CaliforniaEasternLaboratoriesandRenesasElectronicsassumenoresponsibilityforanylossesincurredbyyouorthirdpartiesasaresultofunauthorizeduseofRenesasElectronicsproducts.
11.
Thisdocumentmaynotbereproducedorduplicatedinanyform,inwholeorinpart,withoutpriorwrittenconsentofCaliforniaEasternLaboratories.
12.
PleasecontactaCaliforniaEasternLaboratoriessalesofficeifyouhaveanyquestionsregardingtheinformationcontainedinthisdocumentorRenesasElectronicsproducts,orifyouhaveanyotherinquiries.
NOTE1:"RenesasElectronics"asusedinthisdocumentmeansRenesasElectronicsCorporationandalsoincludesitsmajority-ownedsubsidiaries.
NOTE2:"RenesasElectronicsproduct(s)"meansanyproductdevelopedormanufacturedbyorforRenesasElectronics.
NOTE3:Productsandproductinformationaresubjecttochangewithoutnotice.
CELHeadquarters4590PatrickHenryDrive,SantaClara,CA95054Phone(408)919-2500www.
cel.
comForacompletelistofsalesoffices,representativesanddistributors,Pleasevisitourwebsite:www.
cel.
com/contactusMouserElectronicsAuthorizedDistributorClicktoViewPricing,Inventory,Delivery&LifecycleInformation:CEL:PS2562L-1-APS2562-1-APS2562-1-L-APS2562-1-V-APS2562L-1-F3-APS2562L2-1-K-APS2562L2-1-APS2562L1-1-K-A
Therevisedpointscanbeeasilysearchedbycopyingan""inthePDFfileandspecifyingitinthe"Findwhat:"field.
1.
Anode2.
Cathode3.
Emitter4.
CollectorPINCONNECTION(TopView)1243DESCRIPTIONThePS2562-1isopticallycoupledisolatorscontainingaGaAslightemittingdiodeandanNPNsilicondarlingtonconnectedphototransistor.
ThePS2562-1isinaplasticDIP(DualIn-linePackage)andthePS2562L-1isleadbendingtype(Gull-wing)forsurfacemount.
ThePS2562L1-1isleadbendingtypeforlongcreepagedistance.
ThePS2562L2-1isleadbendingtypeforlongcreepagedistance(Gull-wing)forsurfacemount.
FEATURESHighisolationvoltage(BV=5000Vr.
m.
s.
)Highcurrenttransferratio(CTR=2000%TYP.
)High-speedswitching(tr,tf=100μsTYP.
)Orderingnumberoftapeproduct:PS2562L-1-F3:2000pcs/reel:PS2562L2-1-E3:1000pcs/reelSafetystandardsULapproved:No.
E72422CSAapproved:No.
CA101391(CA5A,CAN/CSA-C22.
260065,60950)BSIapproved:No.
7112/7420SEMKOapproved:No.
903238NEMKOapproved:No.
P09210868DEMKOapproved:No.
314999FIMKOapproved:No.
FI25119DINEN60747-5-2(VDE0884Part2)approved:No.
40008862(option)APPLICATIONSPowersupplyTelephone/FAX.
FA/OAequipmentProgrammablelogiccontrollerDATASHEETTheinformationinthisdocumentissubjecttochangewithoutnotice.
Beforeusingthisdocument,pleaseconfirmthatthisisthelatestversion.
HIGHISOLATIONVOLTAGEDARLINGTONTRANSISTORTYPEMULTIPHOTOCOUPLERSERIESNEPOCSeriesDocumentNo.
PN10235EJ04V0DS(4thedition)DatePublishedNovember2009NSPrintedinJapanPHOTOCOUPLERPS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1PACKAGEDIMENSIONS(UNIT:mm)DIPTypeLongCreepageDistancePS2562-13.
5±0.
34.
15±0.
43.
2±0.
42.
541.
25±0.
150.
50±0.
100.
25M4.
6±0.
356.
5±0.
50to15°7.
620.
25+0.
1–0.
051243PS2562L1-10to15°0.
25+0.
1–0.
0510.
162.
540.
25M0.
50±0.
11.
25±0.
153.
85±0.
43.
15±0.
353.
5±0.
36.
5±0.
54.
6±0.
351243LeadBendingType(Gull-Wing)LongCreepageDistance(Gull-Wing)PS2562L-10.
25M4.
6±0.
356.
5±0.
53.
5±0.
32.
541.
25±0.
150.
9±0.
259.
60±0.
40.
25+0.
1–0.
050.
1+0.
1–0.
051243PS2562L2-10.
25M2.
541.
25±0.
153.
5±0.
36.
5±0.
54.
6±0.
3511.
8+0.
2–0.
50.
25+0.
1–0.
050.
25±0.
20.
9±0.
2510.
1612430.
150.
25PHOTOCOUPLERCONSTRUCTIONParameterUnit(MIN.
)AirDistance7mmOuterCreepageDistance7mmInnerCreepageDistance4mmIsolationThickness0.
4mmDataSheetPN10235EJ04V0DS2PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1MARKINGEXAMPLE2562MJ931JAssemblyLotWeekAssembledYearAssembled(Last1Digit)In-houseCodeCTRRankCodeNo.
1pinMarkPackageNewPKGMadeinJapanMJ931DataSheetPN10235EJ04V0DS3PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1ORDERINGINFORMATIONPartNumberOrderNumberSolderPlatingSpecificationPackingStyleSafetyStandardApprovalApplicationPartNumber*1PS2562-1PS2562-1-APb-FreeMagazinecase100pcsStandardproductsPS2562-1PS2562L-1PS2562L-1-A(UL,CSA,BSI,PS2562L1-1PS2562L1-1-ASEMKO,NEMKO,PS2562L2-1PS2562L2-1-ADEMKO,FIMKOPS2562L-1-F3PS2562L-1-F3-AEmbossedTape2000pcs/reelapproved)PS2562L2-1-E3PS2562L2-1-E3-AEmbossedTape1000pcs/reelPS2562-1-VPS2562-1-V-AMagazinecase100pcsDINEN60747-5-2PS2562L-1-VPS2562L-1-V-A(VDE0884Part2)PS2562L1-1-VPS2562L1-1-V-AapprovedproductsPS2562L2-1-VPS2562L2-1-V-A(option)PS2562L-1-V-F3PS2562L-1-V-F3-AEmbossedTape2000pcs/reelPS2562L2-1-V-E3PS2562L2-1-V-E3-AEmbossedTape1000pcs/reel*1FortheapplicationoftheSafetyStandard,followingpartnumbershouldbeused.
DataSheetPN10235EJ04V0DS4PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1ABSOLUTEMAXIMUMRATINGS(TA=25°C,unlessotherwisespecified)ParameterSymbolRatingsUnitDiodeReverseVoltageVR6VForwardCurrent(DC)IF80mAPowerDissipationDeratingΔPD/°C1.
5mW/°CPowerDissipationPD150mWPeakForwardCurrent*1IFP1ATransistorCollectortoEmitterVoltageVCEO40VEmittertoCollectorVoltageVECO6VCollectorCurrentIC200mAPowerDissipationDeratingΔPC/°C2.
0mW/°CPowerDissipationPC200mWIsolationVoltage*2BV5000Vr.
m.
s.
OperatingAmbientTemperatureTA–55to+100°CStorageTemperatureTstg–55to+150°C*1PW=100μs,DutyCycle=1%*2ACvoltagefor1minuteatTA=25°C,RH=60%betweeninputandoutput.
Pins1-2shortedtogether,3-4shortedtogether.
DataSheetPN10235EJ04V0DS5PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1ELECTRICALCHARACTERISTICS(TA=25°C)ParameterSymbolConditionsMIN.
TYP.
MAX.
UnitDiodeForwardVoltageVFIF=10mA1.
171.
4VReverseCurrentIRVR=5V5μATerminalCapacitanceCtV=0V,f=1.
0MHz50pFTransistorCollectortoEmitterDarkCurrentICEOVCE=40V,IF=0mA400nACoupledCurrentTransferRatio(IC/IF)*1CTRIF=1mA,VCE=2VDC2002000%CollectorSaturationVoltageVCE(sat)IF=1mA,IC=2mA1.
0VIsolationResistanceRI-OVI-O=1.
0kVDC1011ΩIsolationCapacitanceCI-OV=0V,f=1.
0MHz0.
5pFRiseTime*2trVCC=10V,IC=10mA,RL=100Ω100μsFallTime*2tf100*1CTRrankK:2000to(%)L:700to3400(%)M:200to1000(%)*2TestcircuitforswitchingtimeVCCVOUTRL=100Ω50ΩIFPulseInputPW=1msDutyCycle=1/10DataSheetPN10235EJ04V0DS6PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1TYPICALCHARACTERISTICS(TA=25°C,unlessotherwisespecified)1501005002550751001251500.
50.
11510501000.
70.
80.
91.
01.
11.
21.
31.
41.
50204060801001201401602468105mA2mA1mAIF=0.
5mA101100100010000–50–2502550751000.
20.
51510200500.
41000.
60.
81.
01.
21.
41.
65mA2mA1mA0.
5mAIF=0.
1mA0.
2mA1.
5mW/°C0°C–25°C–55°CVCE=2V5V10V24V40V+60°C+25°CTA=+100°CDiodePowerDissipationPD(mW)TransistorPowerDissipationPC(mW)AmbientTemperatureTA(°C)ForwardCurrentIF(mA)ForwardVoltageVF(V)CollectorCurrentIC(mA)CollectortoEmitterVoltageVCE(V)CollectortoEmitterDarkCurrentICEO(nA)CollectorSaturationVoltageVCE(sat)(V)AmbientTemperatureTA(°C)AmbientTemperatureTA(°C)DIODEPOWERDISSIPATIONvs.
AMBIENTTEMPERATURETRANSISTORPOWERDISSIPATIONvs.
AMBIENTTEMPERATUREFORWARDCURRENTvs.
FORWARDVOLTAGECOLLECTORCURRENTvs.
COLLECTORTOEMITTERVOLTAGECOLLECTORTOEMITTERDARKCURRENTvs.
AMBIENTTEMPERATURECOLLECTORCURRENTvs.
COLLECTORSATURATIONVOLTAGECollectorCurrentIC(mA)1501005002550751001251502mW/°C200RemarkThegraphsindicatenominalcharacteristics.
DataSheetPN10235EJ04V0DS7PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-11.
4251.
21.
00.
80.
60.
40.
2–500–255075100800001000200030004000500060007000VCE=2V0.
10.
51510301000500100501052100505001k5kVCC=5V,IC=2mA,CTR=2280%tf500501k3001010010005000100005k10k50k5100.
20.
5122050100200IF=1mA,VCE=2V–20–15–10–50150020002500300005001000VCE=2V5010010500RL=100ΩVCC=5V,IF=1mA,CTR=2280%tdts30500100ktftstrtdtrNormalizedto1.
0atTA=25°C,IF=1mA,VCE=2VForwardCurrentIF(mA)AmbientTemperatureTA(°C)LoadResistanceRL(Ω)Frequencyf(kHz)NormalizedCurrentTransferRatioCTRCurrentTransferRatioCTR(%)NormalizedGainGVLoadResistanceRL(Ω)SwitchingTimet(s)μNORMALIZEDCURRENTTRANSFERRATIOvs.
AMBIENTTEMPERATURECURRENTTRANSFERRATIOvs.
FORWARDCURRENTSWITCHINGTIMEvs.
LOADRESISTANCESWITCHINGTIMEvs.
LOADRESISTANCEFREQUENCYRESPONSESwitchingTimet(s)μForwardCurrentIF(A)CurrentTransferRatioCTR(%)CURRENTTRANSFERRATIOvs.
FORWARDCURRENTμSampleABCDSampleABCDRemarkThegraphsindicatenominalcharacteristics.
DataSheetPN10235EJ04V0DS8PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1101021031041051060.
600.
20.
40.
81.
01.
2TA=25°CTA=60°CTime(Hr)CTR(RelativeValue)LONGTERMCTRDEGRADATIONIF=1mARemarkThegraphindicatesnominalcharacteristics.
DataSheetPN10235EJ04V0DS9PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1TAPINGSPECIFICATIONS(UNIT:mm)TapeDirectionPS2562L-1-F3OutlineandDimensions(Tape)1.
55±0.
12.
0±0.
14.
0±0.
11.
75±0.
14.
5MAX.
4.
0±0.
10.
45.
3±0.
18.
0±0.
17.
5±0.
116.
0±0.
310.
3±0.
11.
5+0.
1–0OutlineandDimensions(Reel)Packing:2000pcs/reel2.
0±0.
5R1.
013.
0±0.
2φ21.
0±0.
8φ330±2.
0100±1.
02.
0±0.
5φφ15.
9to19.
4Outeredgeofflang21.
5±1.
017.
5±1.
0DataSheetPN10235EJ04V0DS10PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1TapeDirectionPS2562L2-1-E3OutlineandDimensions(Tape)2.
05±0.
12.
0±0.
14.
0±0.
11.
55±0.
11.
75±0.
14.
4±0.
212.
35±0.
150.
3811.
5±0.
124.
0±0.
36.
6±0.
212.
0±0.
1OutlineandDimensions(Reel)Packing:1000pcs/reel2.
0±0.
5R1.
013.
0±0.
2φ21.
0±0.
8φ330±2.
0φ100±1.
0φ2.
0±0.
529.
5±1.
025.
5±1.
023.
9to27.
4OuteredgeofflangeDataSheetPN10235EJ04V0DS11PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1NOTESONHANDLING1.
Recommendedsolderingconditions(1)InfraredreflowsolderingPeakreflowtemperature260°Corbelow(packagesurfacetemperature)Timeofpeakreflowtemperature10secondsorlessTimeoftemperaturehigherthan220°C60secondsorlessTimetopreheattemperaturefrom120to180°C120±30sNumberofreflowsThreeFluxRosinfluxcontainingsmallamountofchlorine(Thefluxwithamaximumchlorinecontentof0.
2Wt%isrecommended.
)120±30s(preheating)220°C180°CPackageSurfaceTemperatureT(°C)Time(s)RecommendedTemperatureProfileofInfraredReflow(heating)to10sto60s260°CMAX.
120°C(2)WavesolderingTemperature260°Corbelow(moltensoldertemperature)Time10secondsorlessPreheatingconditions120°Corbelow(packagesurfacetemperature)NumberoftimesOne(Allowedtobedippedinsolderincludingplasticmoldportion.
)FluxRosinfluxcontainingsmallamountofchlorine(Thefluxwithamaximumchlorinecontentof0.
2Wt%isrecommended.
)(3)SolderingbysolderingironPeaktemperature(leadparttemperature)350°CorbelowTime(eachpins)3secondsorlessFluxRosinfluxcontainingsmallamountofchlorine(Thefluxwithamaximumchlorinecontentof0.
2Wt%isrecommended.
)(a)Solderingofleadsshouldbemadeatthepoint1.
5to2.
0mmfromtherootofthelead.
(b)Pleasebesurethatthetemperatureofthepackagewouldnotbeheatedover100°C.
DataSheetPN10235EJ04V0DS12PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1(4)CautionsFluxesAvoidremovingtheresidualfluxwithfreon-basedandchlorine-basedcleaningsolvent.
2.
CautionsregardingnoiseBeawarethatwhenvoltageisappliedsuddenlybetweenthephotocoupler'sinputandoutputorbetweencollector-emittersatstartup,theoutputtransistormayentertheonstate,evenifthevoltageiswithintheabsolutemaximumratings.
3.
Measurementconditionsofcurrenttransferratios(CTR),whichdifferaccordingtophotocouplerCheckthesettingvaluesbeforeuse,sincetheforwardcurrentconditionsatCTRmeasurementdifferaccordingtoproduct.
Whenusingproductsotherthanatthespecifiedforwardcurrent,thecharacteristicscurvesmaydifferfromthestandardcurvesduetoCTRvaluevariationsorthelike.
Therefore,checkthecharacteristicsundertheactualoperatingconditionsandthoroughlytakevariationsorthelikeintoconsiderationbeforeuse.
USAGECAUTIONS1.
Protectagainststaticelectricitywhenhandling.
2.
Avoidstorageatahightemperatureandhighhumidity.
DataSheetPN10235EJ04V0DS13PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1SPECIFICATIONOFVDEMARKSLICENSEDOCUMENTParameterSymbolSpeckUnitClimatictestclass(IEC60068-1/DINEN60068-1)55/100/21DielectricstrengthmaximumoperatingisolationvoltageTestvoltage(partialdischargetestprocedureafortypetestandrandomtest)Upr=1.
5*UIORM,PdDataSheetPN10235EJ04V0DS14PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1CautionGaAsProductsThisproductusesgalliumarsenide(GaAs).
GaAsvaporandpowderarehazardoustohumanhealthifinhaledoringested,sopleaseobservethefollowingpoints.
Followrelatedlawsandordinanceswhendisposingoftheproduct.
Iftherearenoapplicablelawsand/orordinances,disposeoftheproductasrecommendedbelow.
1.
Commissionadisposalcompanyableto(withalicenseto)collect,transportanddisposeofmaterialsthatcontainarsenicandothersuchindustrialwastematerials.
2.
Excludetheproductfromgeneralindustrialwasteandhouseholdgarbage,andensurethattheproductiscontrolled(asindustrialwastesubjecttospecialcontrol)upuntilfinaldisposal.
Donotburn,destroy,cut,crush,orchemicallydissolvetheproduct.
Donotlicktheproductorinanywayallowittoenterthemouth.
PS2562-1,PS2562L-1,PS2562L1-1,PS2562L2-1NOTICE1.
Descriptionsofcircuits,softwareandotherrelatedinformationinthisdocumentareprovidedonlytoillustratetheoperationofsemiconductorproductsandapplicationexamples.
Youarefullyresponsiblefortheincorporationofthesecircuits,software,andinformationinthedesignofyourequipment.
CaliforniaEasternLaboratoriesandRenesasElectronicsassumesnoresponsibilityforanylossesincurredbyyouorthirdpartiesarisingfromtheuseofthesecircuits,software,orinformation.
2.
CaliforniaEasternLaboratorieshasusedreasonablecareinpreparingtheinformationincludedinthisdocument,butCaliforniaEasternLaboratoriesdoesnotwarrantthatsuchinformationiserrorfree.
CaliforniaEasternLaboratoriesandRenesasElectronicsassumesnoliabilitywhatsoeverforanydamagesincurredbyyouresultingfromerrorsinoromissionsfromtheinformationincludedherein.
3.
CaliforniaEasternLaboratoriesandRenesasElectronicsdonotassumeanyliabilityforinfringementofpatents,copyrights,orotherintellectualpropertyrightsofthirdpartiesbyorarisingfromtheuseofRenesasElectronicsproductsortechnicalinformationdescribedinthisdocument.
Nolicense,express,impliedorotherwise,isgrantedherebyunderanypatents,copyrightsorotherintellectualpropertyrightsofCaliforniaEasternLaboratoriesorRenesasElectronicsorothers.
4.
Youshouldnotalter,modify,copy,orotherwisemisappropriateanyRenesasElectronicsproduct,whetherinwholeorinpart.
CaliforniaEasternLaboratoriesandRenesasElectronicsassumenoresponsibilityforanylossesincurredbyyouorthirdpartiesarisingfromsuchalteration,modification,copyorotherwisemisappropriationofRenesasElectronicsproduct.
5.
RenesasElectronicsproductsareclassifiedaccordingtothefollowingtwoqualitygrades:"Standard"and"HighQuality".
TherecommendedapplicationsforeachRenesasElectronicsproductdependsontheproduct'squalitygrade,asindicatedbelow.
"Standard":Computers;officeequipment;communicationsequipment;testandmeasurementequipment;audioandvisualequipment;homeelectronicappliances;machinetools;personalelectronicequipment;andindustrialrobotsetc.
"HighQuality":Transportationequipment(automobiles,trains,ships,etc.
);trafficcontrolsystems;anti-disastersystems;anti-crimesystems;andsafetyequipmentetc.
RenesasElectronicsproductsareneitherintendednorauthorizedforuseinproductsorsystemsthatmayposeadirectthreattohumanlifeorbodilyinjury(artificiallifesupportdevicesorsystems,surgicalimplantationsetc.
),ormaycauseseriouspropertydamages(nuclearreactorcontrolsystems,militaryequipmentetc.
).
YoumustcheckthequalitygradeofeachRenesasElectronicsproductbeforeusingitinaparticularapplication.
YoumaynotuseanyRenesasElectronicsproductforanyapplicationforwhichitisnotintended.
CaliforniaEasternLaboratoriesandRenesasElectronicsshallnotbeinanywayliableforanydamagesorlossesincurredbyyouorthirdpartiesarisingfromtheuseofanyRenesasElectronicsproductforwhichtheproductisnotintendedbyCaliforniaEasternLaboratoriesorRenesasElectronics.
6.
YoushouldusetheRenesasElectronicsproductsdescribedinthisdocumentwithintherangespecifiedbyCaliforniaEasternLaboratories,especiallywithrespecttothemaximumrating,operatingsupplyvoltagerange,movementpowervoltagerange,heatradiationcharacteristics,installationandotherproductcharacteristics.
CaliforniaEasternLaboratoriesshallhavenoliabilityformalfunctionsordamagesarisingoutoftheuseofRenesasElectronicsproductsbeyondsuchspecifiedranges.
7.
AlthoughRenesasElectronicsendeavorstoimprovethequalityandreliabilityofitsproducts,semiconductorproductshavespecificcharacteristicssuchastheoccurrenceoffailureatacertainrateandmalfunctionsundercertainuseconditions.
Further,RenesasElectronicsproductsarenotsubjecttoradiationresistancedesign.
Pleasebesuretoimplementsafetymeasurestoguardthemagainstthepossibilityofphysicalinjury,andinjuryordamagecausedbyfireintheeventofthefailureofaRenesasElectronicsproduct,suchassafetydesignforhardwareandsoftwareincludingbutnotlimitedtoredundancy,firecontrolandmalfunctionprevention,appropriatetreatmentforagingdegradationoranyotherappropriatemeasures.
Becausetheevaluationofmicrocomputersoftwarealoneisverydifficult,pleaseevaluatethesafetyofthefinalproductsorsystemsmanufacturedbyyou.
8.
PleasecontactaCaliforniaEasternLaboratoriessalesofficefordetailsastoenvironmentalmatterssuchastheenvironmentalcompatibilityofeachRenesasElectronicsproduct.
PleaseuseRenesasElectronicsproductsincompliancewithallapplicablelawsandregulationsthatregulatetheinclusionoruseofcontrolledsubstances,includingwithoutlimitation,theEURoHSDirective.
CaliforniaEasternLaboratoriesandRenesasElectronicsassumenoliabilityfordamagesorlossesoccurringasaresultofyournoncompliancewithapplicablelawsandregulations.
9.
RenesasElectronicsproductsandtechnologymaynotbeusedfororincorporatedintoanyproductsorsystemswhosemanufacture,use,orsaleisprohibitedunderanyapplicabledomesticorforeignlawsorregulations.
YoushouldnotuseRenesasElectronicsproductsortechnologydescribedinthisdocumentforanypurposerelatingtomilitaryapplicationsorusebythemilitary,includingbutnotlimitedtothedevelopmentofweaponsofmassdestruction.
WhenexportingtheRenesasElectronicsproductsortechnologydescribedinthisdocument,youshouldcomplywiththeapplicableexportcontrollawsandregulationsandfollowtheproceduresrequiredbysuchlawsandregulations.
10.
ItistheresponsibilityofthebuyerordistributorofCaliforniaEasternLaboratories,whodistributes,disposesof,orotherwiseplacestheRenesasElectronicsproductwithathirdparty,tonotifysuchthirdpartyinadvanceofthecontentsandconditionssetforthinthisdocument,CaliforniaEasternLaboratoriesandRenesasElectronicsassumenoresponsibilityforanylossesincurredbyyouorthirdpartiesasaresultofunauthorizeduseofRenesasElectronicsproducts.
11.
Thisdocumentmaynotbereproducedorduplicatedinanyform,inwholeorinpart,withoutpriorwrittenconsentofCaliforniaEasternLaboratories.
12.
PleasecontactaCaliforniaEasternLaboratoriessalesofficeifyouhaveanyquestionsregardingtheinformationcontainedinthisdocumentorRenesasElectronicsproducts,orifyouhaveanyotherinquiries.
NOTE1:"RenesasElectronics"asusedinthisdocumentmeansRenesasElectronicsCorporationandalsoincludesitsmajority-ownedsubsidiaries.
NOTE2:"RenesasElectronicsproduct(s)"meansanyproductdevelopedormanufacturedbyorforRenesasElectronics.
NOTE3:Productsandproductinformationaresubjecttochangewithoutnotice.
CELHeadquarters4590PatrickHenryDrive,SantaClara,CA95054Phone(408)919-2500www.
cel.
comForacompletelistofsalesoffices,representativesanddistributors,Pleasevisitourwebsite:www.
cel.
com/contactusMouserElectronicsAuthorizedDistributorClicktoViewPricing,Inventory,Delivery&LifecycleInformation:CEL:PS2562L-1-APS2562-1-APS2562-1-L-APS2562-1-V-APS2562L-1-F3-APS2562L2-1-K-APS2562L2-1-APS2562L1-1-K-A
ShockHosting日本机房VPS测试点评
这个月11号ShockHosting发了个新上日本东京机房的邮件，并且表示其他机房可以申请转移到日本，刚好赵容手里有个美国的也没数据就发工单申请新开了一个，这里做个简单的测试，方便大家参考。ShockHosting成立于2013年，目前提供的VPS主机可以选择11个数据中心，包括美国洛杉矶、芝加哥、达拉斯、杰克逊维尔、新泽西、澳大利亚、新加坡、日本、荷兰和英国等。官方网站：https://shoc...
Pia云服务香港月20元游戏提供香港CN2云服务器
Pia云商家在前面有介绍过一次，根据市面上的信息是2018的开办的国人商家，原名叫哔哔云，目前整合到了魔方云平台。这个云服务商家主要销售云服务器VPS主机业务和服务，云服务器采用KVM虚拟架构 。目前涉及的机房有美国洛杉矶、中国香港和深圳地区。洛杉矶为crea机房，三网回程CN2 GIA，自带20G防御。中国香港机房的线路也是CN2直连大陆，比较适合建站或者有游戏业务需求的用户群。在这篇文章中，简...
UCloud年度大促活动可选香港云服务器低至年134元
由于行业需求和自媒体的倾向问题，对于我们个人站长建站的方向还是有一些需要改变的。传统的个人网站建站内容方向可能会因为自媒体的分流导致个人网站很多行业不再成为流量的主导。于是我们很多个人网站都在想办法进行重新更换行业，包括前几天也有和网友在考虑是不是换个其他行业做做。这不有重新注册域名重新更换。鉴于快速上手的考虑还是采用香港服务器，这不腾讯云和阿里云早已不是新账户，考虑到新注册UCLOUD账户还算比...
ps半透明为你推荐
-
免费制作qq空间怎么样免费做qq空间手游运营手册游戏发展国主机开发怎么做 怎么开发主机暴风影音怎么截图怎么截取暴风影音图片51自学网站网上自学网站有哪些？最好是免费的，我想学习网页设计中国论坛大全安徽论坛都有哪些？bluestacks安卓模拟器BlueStacks如何安装使用？网站联盟网站联盟的运作流程镜像文件是什么系统镜像是什么二层交换机什么是三层交换机?什么是二层叫交换机?有什么区别?云挂机有免费的云挂机软件吗？