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VESD03A1B-HD1www.
vishay.
comVishaySemiconductorsRev.
2.
2,20-Sep-20191DocumentNumber:81851Fortechnicalquestions,contact:ESDprotection@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000ESDProtectionDiodeinLLP1006-2LMARKING(exampleonly)Bar=cathodemarkingX=datecodeY=typecode(seetablebelow)ADDITIONALRESOURCESFEATURESUltracompactLLP1006-2LpackageLowpackageheight3.
5ASolderingcanbecheckedbystandardvisioninspection.
NoX-raynecessaryPinplatingNiPdAu(e4)nowhiskergrowthe4-preciousmetal(e.
g.
Ag,Au,NiPd,NiPdAu)(noSn)PATENT(S):www.
vishay.
com/patentsMaterialcategorization:fordefinitionsofcompliancepleaseseewww.
vishay.
com/doc99912PATENT(S):www.
vishay.
com/patentsThisVishayproductisprotectedbyoneormoreUnitedStatesandinternationalpatents.
20855208562121121XY333DDD3D3DModelsModelsORDERINGINFORMATIONDEVICENAMEORDERINGCODETAPEDUNITSPERREEL(8mmTAPEon7"REEL)MINIMUMORDERQUANTITYVESD03A1B-HD1VESD03A1B-HD1-GS088k8kPACKAGEDATADEVICENAMEPACKAGENAMETYPECODEWEIGHTMOLDINGCOMPOUNDFLAMMABILITYRATINGMOISTURESENSITIVITYLEVELSOLDERINGCONDITIONSVESD03A1B-HD1LLP1006-2LJ0.
72mgUL94V-0MSLlevel1(accordingJ-STD-020)Peaktemperaturemax.
260°CABSOLUTEMAXIMUMRATINGSVESD03A1B-HD1PARAMETERTESTCONDITIONSSYMBOLVALUEUNITPeakpulsecurrentAcc.
IEC61000-4-5;tP=8/20μs;singleshotIPPM3.
5APeakpulsepowerAcc.
IEC61000-4-5;tP=8/20μs;singleshotPPP31WESDimmunityContactdischargeacc.
IEC61000-4-2;10pulsesVESD±30kVAirdischargeacc.
IEC61000-4-2;10pulses±30kVOperatingtemperatureJunctiontemperatureTJ-40to+125°CStoragetemperatureTstg-55to+150°CVESD03A1B-HD1www.
vishay.
comVishaySemiconductorsRev.
2.
2,20-Sep-20192DocumentNumber:81851Fortechnicalquestions,contact:ESDprotection@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000BiAs-MODE(bidirectionalasymmetricalprotectionmode)WiththeVESD03A1B-HD1onesignal-ordata-lines(L1)canbeprotectedagainstvoltagetransients.
Withpin1connectedtogroundandpin2connectedtoasignal-ordata-linewhichhastobeprotected.
Aslongasthevoltagelevelonthedata-orsignal-lineisbetween0V(groundlevel)andthespecifiedmaximumreverseworkingvoltage(VRWM)theprotectiondiodebetweendatalineandgroundoffersahighisolationtothegroundline.
Theprotectiondevicebehaveslikeanopenswitch.
Assoonasanypositivetransientvoltagesignalexceedsthebreakthroughvoltageleveloftheprotectiondiode,thediodebecomesconductiveandshortsthetransientcurrenttoground.
Nowtheprotectiondevicebehaveslikeaclosedswitch.
Theclampingvoltage(VC)isdefinedbythebreakthroughvoltage(VBR)levelplusthevoltagedropattheseriesimpedance(resistanceandinductance)oftheprotectiondevice.
Anynegativetransientsignalwillbeclampedaccordingly.
Thenegativetransientcurrentisflowingintheforwarddirectionoftheprotectiondiode.
Thelowforwardvoltage(VF)clampsthenegativetransientclosetothegroundlevel.
DuetothedifferentclampinglevelsinforwardandreversedirectiontheVESD03A1B-HD1clampingbehaviorisbidirectionalandasymmetrical(BiAs).
ELECTRICALCHARACTERISTICSVESD03A1B-HD1(Tamb=25°C,unlessotherwisespecified)PARAMETERTESTCONDITIONS/REMARKSSYMBOLMIN.
TYP.
MAX.
UNITProtectionpathsNumberoflineswhichcanbeprotectedNchannel--1linesReversestand-offvoltageMax.
reverseworkingvoltageVRWM--3.
3VReversevoltageAtIR=0.
5μAVR3.
3--VReversecurrentAtVR=3.
5VIR-0.
040.
5μAReversebreakdownvoltageAtIR=1mAVBR566.
6VReverseclampingvoltageAtIPP=1AVC-6.
27.
5VAtIPP=IPPM=3.
5AVC-7.
69VForwardclampingvoltageAtIPP=0.
2AVF-0.
91.
2VAtIPP=1AVF-1.
25-VAtIPP=IPPM=3.
5AVF-1.
8-VCapacitanceAtVR=0V;f=1MHzCD-2528pFAtVR=2.
5V;f=1MHzCD-15-pFL12092521GroundBiAsVESD03A1B-HD1www.
vishay.
comVishaySemiconductorsRev.
2.
2,20-Sep-20193DocumentNumber:81851Fortechnicalquestions,contact:ESDprotection@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000TYPICALCHARACTERISTICS(Tamb=25°C,unlessotherwisespecified)Fig.
1-ESDDischargeCurrentWaveFormacc.
IEC61000-4-2(330/150pF)Fig.
2-8/20μsPeakPulseCurrentWaveFormacc.
IEC61000-4-5Fig.
3-TypicalCapacitanceCDvs.
ReverseVoltageVRFig.
4-TypicalForwardCurrentIFvs.
ForwardVoltageVFFig.
5-TypicalReverseVoltageVRvs.
ReverseCurrentIRFig.
6-TypicalPeakClampingVoltageVCvs.
PeakPulseCurrentIPP10100100010000020406080100120-100102030405060708090100AxisTitle1stline2ndline2ndlineIESD(%)t(ns)2ndlineRisetime=0.
7nsto1ns53272055710100100010000020406080100010203040AxisTitle1stline2ndline2ndlineIPPM(%)t(s)2ndline20sto50%8sto100%205480510152025300123456VR(V)CD(pF)21114f=1MHz0.
0010.
010.
11101000.
50.
60.
70.
80.
91.
0VF(V)IF(mA)21115012345670.
010.
1110100100010000IR(A)VR(V)21116-4-2024681001234IPP(A)VC(V)21117VCPositivesurgeNegativesurgeMeasuredacc.
IEC61000-4-5(8/20s-waveform)VESD03A1B-HD1www.
vishay.
comVishaySemiconductorsRev.
2.
2,20-Sep-20194DocumentNumber:81851Fortechnicalquestions,contact:ESDprotection@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000Fig.
7-TypicalClampingPerformanceat+8kVContactDischarge(acc.
IEC61000-4-2)Fig.
8-TypicalClampingPerformanceat-8kVContactDischarge(acc.
IEC61000-4-2)Fig.
9-TypicalPeakClampingVoltageatESDContactDischarge(acc.
IEC61000-4-2)-20-100102030405060-100102030405060708090Acc.
IEC61000-4-2+8kVcontactdischarget(ns)VC-ESD(V)21118-60-50-40-30-20-10010203040-100102030405060708090Acc.
IEC61000-4-2-8kVcontactdischarget(ns)VC-ESD(V)21119-250-200-150-100-5005010015020025005101520253035VESD(kV)VC-ESD(V)21120Acc.
IEC61000-4-2contactdischargeVC-ESDPositivedischargeNegativedischargeVESD03A1B-HD1www.
vishay.
comVishaySemiconductorsRev.
2.
2,20-Sep-20195DocumentNumber:81851Fortechnicalquestions,contact:ESDprotection@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000PACKAGEDIMENSIONSinmillimeters(inches):LLP1006-2L0.
3[0.
012]0.
2[0.
008]0.
45[0.
018]0.
35[0.
014]0.
65[0.
026]0.
55[0.
022]1.
05[0.
041]0.
95[0.
037]Footprintrecommendation:1[0.
039]SolderresistmaskSolderpadDocumentno.
:S8-V-3906.
04-005(4)Rev.
7-Date:11.
May2016208120.
05[0.
002]0.
5[0.
020]0.
55[0.
022]0.
45[0.
018]0.
4[0.
016]0.
33[0.
013]0.
6[0.
024]0.
5[0.
020]0.
25[0.
010]0.
15[0.
006]0.
05[0.
002]0[0.
000]0.
2[0.
008]0.
125[0.
005]ref.
Orientationidentification0.
25[0.
010]PadDesignPatented:US9.
018.
537B2)P(LLP1006-2XTopviewPadlayout-viewfromtopseenatbottomsideUnreelingdirectionOrientationidentificationS8-V-3906.
04-017(4)02.
05.
201722965LegalDisclaimerNoticewww.
vishay.
comVishayRevision:01-Jan-20211DocumentNumber:91000DisclaimerALLPRODUCT,PRODUCTSPECIFICATIONSANDDATAARESUBJECTTOCHANGEWITHOUTNOTICETOIMPROVERELIABILITY,FUNCTIONORDESIGNOROTHERWISE.
VishayIntertechnology,Inc.
,itsaffiliates,agents,andemployees,andallpersonsactingonitsortheirbehalf(collectively,"Vishay"),disclaimanyandallliabilityforanyerrors,inaccuraciesorincompletenesscontainedinanydatasheetorinanyotherdisclosurerelatingtoanyproduct.
Vishaymakesnowarranty,representationorguaranteeregardingthesuitabilityoftheproductsforanyparticularpurposeorthecontinuingproductionofanyproduct.
Tothemaximumextentpermittedbyapplicablelaw,Vishaydisclaims(i)anyandallliabilityarisingoutoftheapplicationoruseofanyproduct,(ii)anyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages,and(iii)anyandallimpliedwarranties,includingwarrantiesoffitnessforparticularpurpose,non-infringementandmerchantability.
StatementsregardingthesuitabilityofproductsforcertaintypesofapplicationsarebasedonVishay'sknowledgeoftypicalrequirementsthatareoftenplacedonVishayproductsingenericapplications.
Suchstatementsarenotbindingstatementsaboutthesuitabilityofproductsforaparticularapplication.
Itisthecustomer'sresponsibilitytovalidatethataparticularproductwiththepropertiesdescribedintheproductspecificationissuitableforuseinaparticularapplication.
Parametersprovidedindatasheetsand/orspecificationsmayvaryindifferentapplicationsandperformancemayvaryovertime.
Alloperatingparameters,includingtypicalparameters,mustbevalidatedforeachcustomerapplicationbythecustomer'stechnicalexperts.
ProductspecificationsdonotexpandorotherwisemodifyVishay'stermsandconditionsofpurchase,includingbutnotlimitedtothewarrantyexpressedtherein.
Exceptasexpresslyindicatedinwriting,Vishayproductsarenotdesignedforuseinmedical,life-saving,orlife-sustainingapplicationsorforanyotherapplicationinwhichthefailureoftheVishayproductcouldresultinpersonalinjuryordeath.
CustomersusingorsellingVishayproductsnotexpresslyindicatedforuseinsuchapplicationsdosoattheirownrisk.
PleasecontactauthorizedVishaypersonneltoobtainwrittentermsandconditionsregardingproductsdesignedforsuchapplications.
Nolicense,expressorimplied,byestoppelorotherwise,toanyintellectualpropertyrightsisgrantedbythisdocumentorbyanyconductofVishay.
Productnamesandmarkingsnotedhereinmaybetrademarksoftheirrespectiveowners.
2021VISHAYINTERTECHNOLOGY,INC.
ALLRIGHTSRESERVED
vishay.
comVishaySemiconductorsRev.
2.
2,20-Sep-20191DocumentNumber:81851Fortechnicalquestions,contact:ESDprotection@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000ESDProtectionDiodeinLLP1006-2LMARKING(exampleonly)Bar=cathodemarkingX=datecodeY=typecode(seetablebelow)ADDITIONALRESOURCESFEATURESUltracompactLLP1006-2LpackageLowpackageheight3.
5ASolderingcanbecheckedbystandardvisioninspection.
NoX-raynecessaryPinplatingNiPdAu(e4)nowhiskergrowthe4-preciousmetal(e.
g.
Ag,Au,NiPd,NiPdAu)(noSn)PATENT(S):www.
vishay.
com/patentsMaterialcategorization:fordefinitionsofcompliancepleaseseewww.
vishay.
com/doc99912PATENT(S):www.
vishay.
com/patentsThisVishayproductisprotectedbyoneormoreUnitedStatesandinternationalpatents.
20855208562121121XY333DDD3D3DModelsModelsORDERINGINFORMATIONDEVICENAMEORDERINGCODETAPEDUNITSPERREEL(8mmTAPEon7"REEL)MINIMUMORDERQUANTITYVESD03A1B-HD1VESD03A1B-HD1-GS088k8kPACKAGEDATADEVICENAMEPACKAGENAMETYPECODEWEIGHTMOLDINGCOMPOUNDFLAMMABILITYRATINGMOISTURESENSITIVITYLEVELSOLDERINGCONDITIONSVESD03A1B-HD1LLP1006-2LJ0.
72mgUL94V-0MSLlevel1(accordingJ-STD-020)Peaktemperaturemax.
260°CABSOLUTEMAXIMUMRATINGSVESD03A1B-HD1PARAMETERTESTCONDITIONSSYMBOLVALUEUNITPeakpulsecurrentAcc.
IEC61000-4-5;tP=8/20μs;singleshotIPPM3.
5APeakpulsepowerAcc.
IEC61000-4-5;tP=8/20μs;singleshotPPP31WESDimmunityContactdischargeacc.
IEC61000-4-2;10pulsesVESD±30kVAirdischargeacc.
IEC61000-4-2;10pulses±30kVOperatingtemperatureJunctiontemperatureTJ-40to+125°CStoragetemperatureTstg-55to+150°CVESD03A1B-HD1www.
vishay.
comVishaySemiconductorsRev.
2.
2,20-Sep-20192DocumentNumber:81851Fortechnicalquestions,contact:ESDprotection@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000BiAs-MODE(bidirectionalasymmetricalprotectionmode)WiththeVESD03A1B-HD1onesignal-ordata-lines(L1)canbeprotectedagainstvoltagetransients.
Withpin1connectedtogroundandpin2connectedtoasignal-ordata-linewhichhastobeprotected.
Aslongasthevoltagelevelonthedata-orsignal-lineisbetween0V(groundlevel)andthespecifiedmaximumreverseworkingvoltage(VRWM)theprotectiondiodebetweendatalineandgroundoffersahighisolationtothegroundline.
Theprotectiondevicebehaveslikeanopenswitch.
Assoonasanypositivetransientvoltagesignalexceedsthebreakthroughvoltageleveloftheprotectiondiode,thediodebecomesconductiveandshortsthetransientcurrenttoground.
Nowtheprotectiondevicebehaveslikeaclosedswitch.
Theclampingvoltage(VC)isdefinedbythebreakthroughvoltage(VBR)levelplusthevoltagedropattheseriesimpedance(resistanceandinductance)oftheprotectiondevice.
Anynegativetransientsignalwillbeclampedaccordingly.
Thenegativetransientcurrentisflowingintheforwarddirectionoftheprotectiondiode.
Thelowforwardvoltage(VF)clampsthenegativetransientclosetothegroundlevel.
DuetothedifferentclampinglevelsinforwardandreversedirectiontheVESD03A1B-HD1clampingbehaviorisbidirectionalandasymmetrical(BiAs).
ELECTRICALCHARACTERISTICSVESD03A1B-HD1(Tamb=25°C,unlessotherwisespecified)PARAMETERTESTCONDITIONS/REMARKSSYMBOLMIN.
TYP.
MAX.
UNITProtectionpathsNumberoflineswhichcanbeprotectedNchannel--1linesReversestand-offvoltageMax.
reverseworkingvoltageVRWM--3.
3VReversevoltageAtIR=0.
5μAVR3.
3--VReversecurrentAtVR=3.
5VIR-0.
040.
5μAReversebreakdownvoltageAtIR=1mAVBR566.
6VReverseclampingvoltageAtIPP=1AVC-6.
27.
5VAtIPP=IPPM=3.
5AVC-7.
69VForwardclampingvoltageAtIPP=0.
2AVF-0.
91.
2VAtIPP=1AVF-1.
25-VAtIPP=IPPM=3.
5AVF-1.
8-VCapacitanceAtVR=0V;f=1MHzCD-2528pFAtVR=2.
5V;f=1MHzCD-15-pFL12092521GroundBiAsVESD03A1B-HD1www.
vishay.
comVishaySemiconductorsRev.
2.
2,20-Sep-20193DocumentNumber:81851Fortechnicalquestions,contact:ESDprotection@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000TYPICALCHARACTERISTICS(Tamb=25°C,unlessotherwisespecified)Fig.
1-ESDDischargeCurrentWaveFormacc.
IEC61000-4-2(330/150pF)Fig.
2-8/20μsPeakPulseCurrentWaveFormacc.
IEC61000-4-5Fig.
3-TypicalCapacitanceCDvs.
ReverseVoltageVRFig.
4-TypicalForwardCurrentIFvs.
ForwardVoltageVFFig.
5-TypicalReverseVoltageVRvs.
ReverseCurrentIRFig.
6-TypicalPeakClampingVoltageVCvs.
PeakPulseCurrentIPP10100100010000020406080100120-100102030405060708090100AxisTitle1stline2ndline2ndlineIESD(%)t(ns)2ndlineRisetime=0.
7nsto1ns53272055710100100010000020406080100010203040AxisTitle1stline2ndline2ndlineIPPM(%)t(s)2ndline20sto50%8sto100%205480510152025300123456VR(V)CD(pF)21114f=1MHz0.
0010.
010.
11101000.
50.
60.
70.
80.
91.
0VF(V)IF(mA)21115012345670.
010.
1110100100010000IR(A)VR(V)21116-4-2024681001234IPP(A)VC(V)21117VCPositivesurgeNegativesurgeMeasuredacc.
IEC61000-4-5(8/20s-waveform)VESD03A1B-HD1www.
vishay.
comVishaySemiconductorsRev.
2.
2,20-Sep-20194DocumentNumber:81851Fortechnicalquestions,contact:ESDprotection@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000Fig.
7-TypicalClampingPerformanceat+8kVContactDischarge(acc.
IEC61000-4-2)Fig.
8-TypicalClampingPerformanceat-8kVContactDischarge(acc.
IEC61000-4-2)Fig.
9-TypicalPeakClampingVoltageatESDContactDischarge(acc.
IEC61000-4-2)-20-100102030405060-100102030405060708090Acc.
IEC61000-4-2+8kVcontactdischarget(ns)VC-ESD(V)21118-60-50-40-30-20-10010203040-100102030405060708090Acc.
IEC61000-4-2-8kVcontactdischarget(ns)VC-ESD(V)21119-250-200-150-100-5005010015020025005101520253035VESD(kV)VC-ESD(V)21120Acc.
IEC61000-4-2contactdischargeVC-ESDPositivedischargeNegativedischargeVESD03A1B-HD1www.
vishay.
comVishaySemiconductorsRev.
2.
2,20-Sep-20195DocumentNumber:81851Fortechnicalquestions,contact:ESDprotection@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000PACKAGEDIMENSIONSinmillimeters(inches):LLP1006-2L0.
3[0.
012]0.
2[0.
008]0.
45[0.
018]0.
35[0.
014]0.
65[0.
026]0.
55[0.
022]1.
05[0.
041]0.
95[0.
037]Footprintrecommendation:1[0.
039]SolderresistmaskSolderpadDocumentno.
:S8-V-3906.
04-005(4)Rev.
7-Date:11.
May2016208120.
05[0.
002]0.
5[0.
020]0.
55[0.
022]0.
45[0.
018]0.
4[0.
016]0.
33[0.
013]0.
6[0.
024]0.
5[0.
020]0.
25[0.
010]0.
15[0.
006]0.
05[0.
002]0[0.
000]0.
2[0.
008]0.
125[0.
005]ref.
Orientationidentification0.
25[0.
010]PadDesignPatented:US9.
018.
537B2)P(LLP1006-2XTopviewPadlayout-viewfromtopseenatbottomsideUnreelingdirectionOrientationidentificationS8-V-3906.
04-017(4)02.
05.
201722965LegalDisclaimerNoticewww.
vishay.
comVishayRevision:01-Jan-20211DocumentNumber:91000DisclaimerALLPRODUCT,PRODUCTSPECIFICATIONSANDDATAARESUBJECTTOCHANGEWITHOUTNOTICETOIMPROVERELIABILITY,FUNCTIONORDESIGNOROTHERWISE.
VishayIntertechnology,Inc.
,itsaffiliates,agents,andemployees,andallpersonsactingonitsortheirbehalf(collectively,"Vishay"),disclaimanyandallliabilityforanyerrors,inaccuraciesorincompletenesscontainedinanydatasheetorinanyotherdisclosurerelatingtoanyproduct.
Vishaymakesnowarranty,representationorguaranteeregardingthesuitabilityoftheproductsforanyparticularpurposeorthecontinuingproductionofanyproduct.
Tothemaximumextentpermittedbyapplicablelaw,Vishaydisclaims(i)anyandallliabilityarisingoutoftheapplicationoruseofanyproduct,(ii)anyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages,and(iii)anyandallimpliedwarranties,includingwarrantiesoffitnessforparticularpurpose,non-infringementandmerchantability.
StatementsregardingthesuitabilityofproductsforcertaintypesofapplicationsarebasedonVishay'sknowledgeoftypicalrequirementsthatareoftenplacedonVishayproductsingenericapplications.
Suchstatementsarenotbindingstatementsaboutthesuitabilityofproductsforaparticularapplication.
Itisthecustomer'sresponsibilitytovalidatethataparticularproductwiththepropertiesdescribedintheproductspecificationissuitableforuseinaparticularapplication.
Parametersprovidedindatasheetsand/orspecificationsmayvaryindifferentapplicationsandperformancemayvaryovertime.
Alloperatingparameters,includingtypicalparameters,mustbevalidatedforeachcustomerapplicationbythecustomer'stechnicalexperts.
ProductspecificationsdonotexpandorotherwisemodifyVishay'stermsandconditionsofpurchase,includingbutnotlimitedtothewarrantyexpressedtherein.
Exceptasexpresslyindicatedinwriting,Vishayproductsarenotdesignedforuseinmedical,life-saving,orlife-sustainingapplicationsorforanyotherapplicationinwhichthefailureoftheVishayproductcouldresultinpersonalinjuryordeath.
CustomersusingorsellingVishayproductsnotexpresslyindicatedforuseinsuchapplicationsdosoattheirownrisk.
PleasecontactauthorizedVishaypersonneltoobtainwrittentermsandconditionsregardingproductsdesignedforsuchapplications.
Nolicense,expressorimplied,byestoppelorotherwise,toanyintellectualpropertyrightsisgrantedbythisdocumentorbyanyconductofVishay.
Productnamesandmarkingsnotedhereinmaybetrademarksoftheirrespectiveowners.
2021VISHAYINTERTECHNOLOGY,INC.
ALLRIGHTSRESERVED
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digital-vm怎么样？digital-vm在今年1月份就新增了日本、新加坡独立服务器业务，但是不知为何，期间终止了销售日本服务器和新加坡服务器，今天无意中在webhostingtalk论坛看到Digital-VM在发日本和新加坡独立服务器销售信息。服务器硬件是 Supermicro、采用最新一代 Intel CPU、DDR4 RAM 和 Enterprise Samsung SSD内存，默认...
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