nonvolatilexxx

PreliminarySpecification2009SiliconStorageTechnology,Inc.
S71309-04-0001/091TheSSTlogoandSuperFlashareregisteredtrademarksofSiliconStorageTechnology,Inc.
MPFisatrademarkofSiliconStorageTechnology,Inc.
Thesespecificationsaresubjecttochangewithoutnotice.
64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF6404FEATURES:Organizedas4Mx16SingleVoltageReadandWriteOperations–2.
7-3.
6VSuperiorReliability–Endurance:upto100,000Cyclesminimum–Greaterthan100yearsDataRetentionLowPowerConsumption(typicalvaluesat5MHz)–ActiveCurrent:4mA(typical)–StandbyCurrent:3A(typical)–AutoLowPowerMode:3A(typical)128-bitUniqueIDSecurity-IDFeature–256Word,userOne-Time-ProgrammableProtectionandSecurityFeatures–HardwareBootBlockProtection/WP#InputPin,Uniform(32KWord)andNon-Uniform(8KWord)optionsavailable–User-controlledindividualblock(32KWord)pro-tection,usingsoftwareonlymethods–PasswordprotectionHardwareResetPin(RST#)FastReadandPageReadAccessTimes:–90nsReadaccesstime–25nsPageReadaccesstimes-4-WordPageReadbufferLatchedAddressandDataFastEraseTimes:–Sector-EraseTime:18ms(typical)–Block-EraseTime:18ms(typical)–Chip-EraseTime:40ms(typical)Erase-Suspend/-ResumeCapabilitiesFastWordandWrite-BufferProgrammingTimes:–Word-ProgramTime:7s(typical)–WriteBufferProgrammingTime:1.
75s/Word(typical)-16-WordWriteBufferAutomaticWriteTiming–InternalVPPGenerationEnd-of-WriteDetection–ToggleBits–Data#Polling–RY/BY#OutputCMOSI/OCompatibilityJEDECStandard–FlashEEPROMPinoutsandcommandsetsCFICompliantPackagesAvailable–48-leadTSOP–48-ballTFBGAAllnon-Pb(lead-free)devicesareRoHScompliantPRODUCTDESCRIPTIONTheSST38VF6401,SST38VF6402,SST38VF6403,andSST38VF6404devicesare4Mx16CMOSAdvancedMulti-PurposeFlashPlus(AdvancedMPF+)manufacturedwithSSTproprietary,high-performanceCMOSSuper-Flashtechnology.
Thesplit-gatecelldesignandthick-oxidetunnelinginjectorattainbetterreliabilityandmanufacturabil-itycomparedwithalternateapproaches.
TheSST38VF6401/6402/6403/6404write(ProgramorErase)witha2.
7-3.
6Vpowersupply.
ThesedevicesconformtoJEDECstandardpinassignmentsforx16memories.
FeaturinghighperformanceWord-Program,theSST38VF6401/6402/6403/6404provideatypicalWord-Programtimeof7sec.
Forfasterword-programmingper-formance,theWrite-BufferProgrammingfeature,hasatyp-icalword-programtimeof1.
75sec.
ThesedevicesuseToggleBitorData#PollingtoindicateProgramoperationcompletion.
Inadditiontosingle-wordRead,AdvancedMPF+devicesprovideaPage-Readfeaturethatenablesafasterwordreadtimeof25ns,forwordsonthesamepage.
Toprotectagainstinadvertentwrite,theSST38VF6401/6402/6403/6404haveon-chiphardwareandSoftwareDataProtectionschemes.
Designed,manufactured,andtestedforawidespectrumofapplications,thesedevicesareavailablewithupto100,000cyclesminimumendur-ance.
Dataretentionisratedatgreaterthan100years.
TheSST38VF6401/6402/6403/6404aresuitedforapplica-tionsthatrequiretheconvenientandeconomicalupdatingofprogram,configuration,ordatamemory.
Forallsystemapplications,AdvancedMPF+significantlyimproveperfor-manceandreliability,whileloweringpowerconsumption.
ThesedevicesinherentlyuselessenergyduringEraseandProgramthanalternativeflashtechnologies.
Thetotalenergyconsumedisafunctionoftheappliedvoltage,cur-rent,andtimeofapplication.
Foranygivenvoltagerange,theSuperFlashtechnologyuseslesscurrenttoprogramandhasashortererasetime;therefore,thetotalenergyconsumedduringanyEraseorProgramoperationislessthanalternativeflashtechnologies.
SST38VF640x2.
7V64Mb(x16)MPF+memories2PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF64042009SiliconStorageTechnology,Inc.
S71309-04-0001/09Thesedevicesalsoimproveflexibilitywhileloweringthecostforprogram,data,andconfigurationstorageapplica-tions.
TheSuperFlashtechnologyprovidesfixedEraseandProgramtimes,independentofthenumberofErase/Pro-gramcyclesthathaveoccurred.
Therefore,thesystemsoft-wareorhardwaredoesnothavetobemodifiedorde-ratedasisnecessarywithalternativeflashtechnologies,whoseEraseandProgramtimesincreasewithaccumulatedErase/Programcycles.
TheSST38VF6401/6402/6403/6404alsoofferflexibledataprotectionfeatures.
Applicationsthatrequirememorypro-tectionfromprogramanderaseoperationscanusetheBootBlock,IndividualBlockProtection,andAdvancedPro-tectionfeatures.
Forapplicationsthatrequireapermanentsolution,theIrreversibleBlockLockingfeatureprovidespermanentprotectionformemoryblocks.
Tomeethigh-density,surfacemountrequirements,theSST38VF6401/6402/6403/6404devicesareofferedin48-leadTSOPand48-ballTFBGApackages.
SeeFigures2and3forpinassignmentsandTable7forpindescriptions.
DEVICEOPERATIONThememoryoperationsfunctionsofthesedevicesareiniti-atedusingcommandswrittentothedeviceusingstandardmicroprocessorWritesequences.
AcommandiswrittenbyassertingWE#lowwhilekeepingCE#low.
TheaddressbusislatchedonthefallingedgeofWE#orCE#,which-everoccurslast.
ThedatabusislatchedontherisingedgeofWE#orCE#,whicheveroccursfirst.
TheSST38VF6401/6402/6403/6404alsohavetheAutoLowPowermodewhichputsthedeviceinanear-standbymodeafterdatahasbeenaccessedwithavalidReadoperation.
ThisreducestheIDDactivereadcurrentfromtypically4mAtotypically3A.
TheAutoLowPowermodereducesthetypicalIDDactivereadcurrenttotherangeof2mA/MHzofReadcycletime.
ThedevicerequiresnoaccesstimetoexittheAutoLowPowermodeafteranyaddresstransitionorcontrolsignaltransitionusedtoinitiateanotherReadcycle.
ThedevicedoesnotenterAuto-LowPowermodeafterpower-upwithCE#heldsteadilylow,untilthefirstaddresstransitionorCE#isdrivenhigh.
ReadTheReadoperationoftheSST38VF6401/6402/6403/6404iscontrolledbyCE#andOE#,bothofwhichhavetobelowforthesystemtoobtaindatafromtheoutputs.
CE#isusedfordeviceselection.
WhenCE#ishigh,thechipisdeselectedandonlystandbypowerisconsumed.
OE#istheoutputcontrolandisusedtogatedatafromtheoutputpins.
ThedatabusisinhighimpedancestatewheneitherCE#orOE#ishigh.
RefertoFigure5,theReadcycletimingdiagram,forfurtherdetails.
PageReadThePageReadoperationutilizesanasynchronousmethodthatenablesthesystemtoreaddatafromtheSST38VF6401/6402/6403/6404atafasterrate.
Thisoper-ationallowsuserstoreadafour-wordpageofdataatanaveragespeedof41.
25nsperword.
InPageRead,theinitialwordreadfromthepagerequiresTACCtobevalid,whiletheremainingthreewordsinthepagerequireonlyTPACC.
Allfourwordsinthepagehavethesameaddressbits,A21-A2,whichareusedtoselectthepage.
AddressbitsA1andA0aretoggled,inanyorder,toreadthewordswithinthepage.
ThePageReadoperationoftheSST38VF6401/6402/6403/6404iscontrolledbyCE#andOE#.
BothCE#andOE#mustbelowforthesystemtoobtaindatafromtheoutputpins.
CE#controlsdeviceselection.
WhenCE#ishigh,thechipisdeselectedandonlystandbypoweriscon-sumed.
OE#istheoutputcontrolandisusedtogatedatafromtheoutputpins.
ThedatabusisinhighimpedancestatewheneitherCE#orOE#ishigh.
RefertoFigure6,thePageReadcycletimingdiagram,forfurtherdetails.
Word-ProgramOperationTheSST38VF6401/6402/6403/6404canbeprogrammedonaword-by-wordbasis.
Beforeprogramming,thesectorwherethewordexistsmustbefullyerased.
TheProgramoperationisaccomplishedinthreesteps.
Thefirststepisthethree-byteloadsequenceforSoftwareDataProtection.
Thesecondstepistoloadwordaddressandworddata.
DuringtheWord-Programoperation,theaddressesarelatchedonthefallingedgeofeitherCE#orWE#,whicheveroccurslast.
ThedataislatchedontherisingedgeofeitherCE#orWE#,whicheveroccursfirst.
ThethirdstepistheinternalProgramoperationwhichisinitiatedaftertherisingedgeofthefourthWE#orCE#,whicheveroccursfirst.
TheProgramoperation,onceinitiated,willbecompletedwithin10s.
SeeFigures7and8forWE#andCE#controlledProgramoperationtimingdiagramsandFigure24forflowcharts.
DuringtheProgramoperation,theonlyvalidreadsareData#Polling,ToggleBits,andRY/BY#.
DuringtheinternalProgramoperation,thehostisfreetoperformadditionaltasks.
AnycommandsissuedduringtheinternalProgramoperationareignored.
Duringthecommandsequence,WP#shouldbestaticallyheldhighorlow.
Whenprogrammingmorethanafewwords,SSTrecom-mendsWrite-BufferProgramming.
PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF640432009SiliconStorageTechnology,Inc.
S71309-04-0001/09Write-BufferProgrammingTheSST38VF6401/6402/6403/6404offerWrite-BufferProgramming,afeaturethatenablesfastereffectivewordprogramming.
Tousethisfeature,writeupto16wordswiththeWrite-to-Buffercommand,thenusetheProgramBuffer-to-FlashcommandtoprogramtheWrite-Buffertomemory.
TheWrite-to-Buffercommandconsistsofbetween5and20writecycles.
ThetotalnumberofwritecyclesintheWrite-to-Buffercommandsequenceisequaltothenumberofwordstobewrittentothebufferplusfour.
ThefirstthreecyclesinthecommandsequencetellthedevicethataWrite-to-Bufferoperationwillbegin.
Thefourthcycletellsthedevicethenumberofwordstobewrittenintothebufferandtheblockaddressofthesewords.
Specifically,thewritecycleconsistsofablockaddressandadatavaluecalledtheWordCount(WC),whichisthenumberofwordstobewrittentothebufferminusone.
IftheWCisgreaterthan15,themaximumbuffersizeminus1,thentheoperationaborts.
Forthefifthcycle,andallsubsequentcyclesoftheWrite-to-Buffercommand,thecommandsequenceconsistsoftheaddressesanddataofthewordstobewrittenintothebuffer.
AllofthesecyclesmusthavethesameA21-A4address,otherwisetheoperationaborts.
ThenumberofWritecyclesrequiredisequaltothenumberofwordstobewrittenintotheWrite-Buffer,whichisequaltoWCplusone.
ThecorrectnumberofWritecyclesmustbeissuedortheoperationwillabort.
EachWritecycledecrementstheWrite-Buffercounter,eveniftwoormoreoftheWritecycleshaveidenticaladdressvalues.
OnlythefinaldataloadedforeachbufferlocationisheldintheWrite-Buffer.
OncetheWrite-to-Buffercommandsequenceiscom-pleted,theProgramBuffer-to-FlashcommandshouldbeissuedtoprogramtheWrite-Buffercontentstothespeci-fiedblockinmemory.
Theblockaddress(i.
e.
A21-A15)inthiscommandmustmatchtheblockaddressinthe4thwritecycleoftheWrite-to-Buffercommandortheoperationaborts.
SeeTable11fordetailsonWrite-to-BufferandPro-gram-Buffer-to-Flashcommands.
Whileissuingthesecommandsequences,theWrite-BufferProgrammingAbortdetectionbit(DQ1)indicatesiftheoperationhasaborted.
Thereareseveralcasesinwhichthedevicecanabort:InthefourthwritecycleoftheWrite-to-Buffercom-mand,iftheWCisgreaterthan15,theoperationaborts.
InthefifthandallsubsequentcyclesoftheWrite-to-Buffercommand,iftheaddressvalues,A21-A4,arenotidentical,theoperationaborts.
IfthenumberofwritecyclesbetweenthefifthtothelastcycleoftheWrite-to-BuffercommandisgreaterthanWC+1,theoperationaborts.
AftercompletingtheWrite-to-Buffercommandsequence,issuinganycommandotherthanthePro-gramBuffer-to-Flashcommand,abortstheoperation.
Loadingablockaddress,i.
e.
A21-A15,intheProgramBuffer-to-FlashcommandthatdoesnotmatchtheblockaddressusedintheWrite-to-Buffercommandabortstheoperation.
IftheWrite-to-BufferorProgramBuffer-to-Flashoperationaborts,thenDQ1=1andthedeviceentersWrite-Buffer-Abortmode.
Toexecuteanotheroperation,aWrite-to-BufferAbort-ResetcommandmustbeissuedtoclearDQ1andreturnthedevicetostandardreadmode.
AftertheWrite-to-BufferandProgramBuffer-to-Flashcommandsaresuccessfullyissued,theprogrammingoperationcanbemonitoredusingData#Polling,ToggleBits,andRY/BY#.
Sector/Block-EraseOperationsTheSector-EraseandBlock-Eraseoperationsallowthesystemtoerasethedeviceonasector-by-sector,orblock-by-block,basis.
TheSST38VF6401/6402/6403/6404offerbothSector-EraseandBlock-Erasemodes.
TheSector-Erasearchitectureisbasedonasectorsizeof4KWords.
TheSector-Erasecommandcaneraseany4KWordsector(S0-S1023).
TheBlock-Erasearchitectureisbasedonblocksizeof32KWords.
InSST38VF6401andSST38VF6402devices,theBlock-Erasecommandcaneraseany32KWordBlock(B0-B127).
Forthenon-uniformbootblockdevices,SST38VF6403andSST38VF6404,theBlock-Erasecom-mandcaneraseany32KWordblockexcepttheblockthatcontainsthebootarea.
Inthebootarea,Block-ErasebehaveslikeSector-Erase,andonlyerasesa4KWordsec-tor.
FortheSST38VF6403device,aBlock-EraseexecutedontheBootBlock(B0),willresultinthedeviceerasinga4KWordsectorinB0locatedatA21-A12.
FortheSST38VF6404device,aBlock-EraseexecutedontheBootBlock(B127),willresultinthedeviceerasinga4KWordsectorinB127locatedatA21-A12.
TheSector-Eraseoperationisinitiatedbyexecutingasix-bytecommandsequencewithSector-Erasecommand(50H)andsectoraddress(SA)inthelastbuscycle.
TheBlock-Eraseoperationisinitiatedbyexecutingasix-bytecommandsequencewithBlock-Erasecommand(30H)andblockaddress(BA)inthelastbuscycle.
Thesectororblockaddressislatchedonthefallingedgeofthesixth4PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF64042009SiliconStorageTechnology,Inc.
S71309-04-0001/09WE#pulse,whilethecommand(50Hor30H)islatchedontherisingedgeofthesixthWE#pulse.
TheinternalEraseoperationbeginsafterthesixthWE#pulse.
TheEnd-of-EraseoperationcanbedeterminedusingeitherData#PollingorToggleBitmethods.
TheRY/BY#pincanalsobeusedtomonitortheeraseoperation.
Formoreinformation,seeFigures14and15fortimingwaveformsandFigure29fortheflowchart.
Anycommands,otherthanErase-Suspend,issuedduringtheSector-orBlock-Eraseoperationareignored.
AnyattempttoSector-orBlock-ErasememoryinsideablockprotectedbyVolatileBlockProtection,Non-VolatileBlockProtection,orWP#(low)willbeignored.
Duringthecom-mandsequence,WP#shouldbestaticallyheldhighorlow.
Erase-Suspend/Erase-ResumeCommandsTheErase-SuspendoperationtemporarilysuspendsaSec-tor-orBlock-EraseoperationthusallowingdatatobereadorprogrammedintoanysectororblockthatisnotengagedinanEraseoperation.
Theoperationisexecutedwithaone-bytecommandsequencewithErase-Suspendcommand(B0H).
Thedeviceautomaticallyentersreadmodewithin20s(max)aftertheErase-Suspendcommandhadbeenissued.
Validdatacanberead,usingaReadorPageReadoperation,fromanysectororblockthatisnotbeingerased.
ReadingatanaddresslocationwithinErase-SuspendedsectorsorblockswilloutputDQ2togglingandDQ6at'1'.
WhileinErase-Suspend,aWord-ProgramorWrite-BufferProgrammingoperationisallowedanywhereexceptthesectororblockselectedforErase-Suspend.
ToresumeasuspendedSector-EraseorBlock-Eraseoper-ation,thesystemmustissuetheErase-Resumecommand.
TheoperationisexecutedbyissuingonebytecommandsequencewithErase-Resumecommand(30H)atanyaddressinthelastBytesequence.
Whenaneraseoperationissuspended,orre-suspended,afterresumethecumulativetimeneededfortheeraseoperationtocompleteisgreaterthantheerasetimeofanon-suspendederaseoperation.
IftheholdtimefromErase-ResumetothenextErase-Suspendoperationislessthan200s,theaccumulativeerasetimecanbecomeverylongTherefore,afterissuinganErase-Resumecom-mand,thesystemmustwaitatleast200sbeforeissuinganotherErase-Suspendcommand.
TheErase-Resumecommandwillbeignoreduntilanyprogramoperationsiniti-atedduringErase-Suspendarecomplete.
BypassmodecanbeenteredwhileinErase-Suspend,butonlyBypassWord-Programisavailableforthosesectorsorblocksthatarenotsuspended.
BypassSector-Erase,BypassBlock-Erase,andBypassChip-Erase,Erase-Sus-pend,andErase-Resumearenotavailable.
InordertoresumeanEraseoperation,theBypassmodemustbeexitedbeforeissuingErase-Resume.
FormoreinformationaboutBypassmode,see"BypassMode"onpage7.
Chip-EraseOperationTheSST38VF6401/6402/6403/6404devicesprovideaChip-Eraseoperation,whicherasestheentirememoryarraytothe'1'state.
Thisoperationisusefulwhentheentiredevicemustbequicklyerased.
TheChip-Eraseoperationisinitiatedbyexecutingasix-bytecommandsequencewithChip-Erasecommand(10H)ataddress555Hinthelastbytesequence.
TheEraseoperationbeginswiththerisingedgeofthesixthWE#orCE#,whicheveroccursfirst.
DuringtheEraseoperation,theonlyvalidreadsareToggleBit,Data#Poll-ing,orRY/BY#.
SeeTable11forthecommandsequence,Figure13fortimingdiagram,andFigure29fortheflow-chart.
AnycommandsissuedduringtheChip-Eraseoper-ationareignored.
IfWP#islow,oranyVPBsorNVPBsareintheprotectstate,anyattempttoexecuteaChip-Eraseoperationisignored.
Duringthecommandsequence,WP#shouldbestaticallyheldhighorlow.
WriteOperationStatusDetectionTooptimizethesystemWritecycletime,theSST38VF6401/6402/6403/6404providetwosoftwaremeanstodetectthecompletionofaWrite(ProgramorErase)cycleThesoftwaredetectionincludestwostatusbits:Data#Polling(DQ7)andToggleBit(DQ6).
TheEnd-of-WritedetectionmodeisenabledaftertherisingedgeofWE#,whichinitiatestheinternalProgramorEraseopera-tion.
Theactualcompletionofthenonvolatilewriteisasyn-chronouswiththesystem.
Therefore,Data#PollingorToggleBitmaybebereadconcurrentwiththecompletionofthewritecycle.
Ifthisoccurs,thesystemmaypossiblygetanincorrectresultfromthestatusdetectionprocess.
Forexample,validdatamayappeartoconflictwitheitherDQ7orDQ6.
Topreventfalseresults,upondetectionoffailures,thesoftwareroutineshouldlooptoreadtheaccessedlocationanadditionaltwotimes.
Ifbothreadsarevalid,thenthedevicehascompletedtheWritecycle,otherwisethefailureisvalid.
FortheWrite-BufferProgrammingfeature,DQ1informstheuserifeithertheWrite-to-BufferorProgramBuffer-to-Flashoperationaborts.
Ifeitheroperationaborts,thenDQ1=1.
DQ1mustbeclearedto'0'byissuingtheWrite-to-BufferAbortResetcommand.
PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF640452009SiliconStorageTechnology,Inc.
S71309-04-0001/09TheSST38VF6401/6402/6403/6404alsoprovideaRY/BY#signal.
ThissignalindicatesthestatusofaProgramorEraseoperation.
IfaProgramorEraseoperationisattemptedonapro-tectedsectororblock,theoperationwillabort.
Afterthedeviceinitiatesanabort,thecorrespondingWriteOpera-tionStatusDetectionBitswillstayactiveforapproximately200ns(programorerase)beforethedevicereturnstoreadmode.
ForthestatusofthesebitsduringaWriteoperation,seeTable1.
Data#Polling(DQ7)WhentheSST38VF6401/6402/6403/6404areinaninter-nalProgramoperation,anyattempttoreadDQ7willpro-ducethecomplementoftruedata.
ForaProgramBuffer-to-Flashoperation,DQ7isthecomplementofthelastwordloadedintheWrite-BufferusingtheWrite-to-Buffercommand.
OncetheProgramoperationiscompleted,DQ7willproducevaliddata.
NotethateventhoughDQ7mayhavevaliddataimmediatelyfollowingthecompletionofaninternalWriteoperation,theremainingdataoutputsmaystillbeinvalid.
ValiddataontheentiredatabuswillappearinsubsequentsuccessiveReadcyclesafteranintervalof1s.
DuringaninternalEraseoperation,anyattempttoreadDQ7willproducea'0'.
OncetheinternalEraseoperationiscompleted,DQ7willproducea'1'.
TheData#PollingisvalidaftertherisingedgeoffourthWE#(orCE#)pulseforProgramoperation.
ForSector-,Block-orChip-Erase,theData#PollingisvalidaftertherisingedgeofsixthWE#(orCE#)pulse.
SeeFigure11forData#Pollingtimingdia-gramandFigure26foraflowchart.
ToggleBits(DQ6andDQ2)DuringtheinternalProgramorEraseoperation,anycon-secutiveattemptstoreadDQ6willproducealternating'1'sand'0's,i.
e.
,togglingbetween'1'and'0'.
WhentheinternalProgramorEraseoperationiscompleted,theDQ6bitwillstoptoggling,andthedeviceisthenreadyforthenextoperation.
ForSector-,Block-,orChip-Erase,thetogglebit(DQ6)isvalidaftertherisingedgeofsixthWE#(orCE#)pulse.
DQ6willbesetto'1'ifaReadoperationisattemptedonanErase-SuspendedSectororBlock.
IfProgramoper-ationisinitiatedinasector/blocknotselectedinErase-Sus-pendmode,DQ6willtoggle.
AnadditionalToggleBitisavailableonDQ2,whichcanbeusedinconjunctionwithDQ6tocheckwhetheraparticularsectororblockisbeingactivelyerasedorerase-sus-pended.
Table1showsdetailedbitstatusinformation.
TheToggleBit(DQ2)isvalidaftertherisingedgeofthelastWE#(orCE#)pulseofWriteoperation.
SeeFigure12forToggleBittimingdiagramandFigure26foraflowchart.
DQ1IfanoperationabortsduringaWrite-to-BufferorProgramBuffer-to-Flashoperation,DQ1issetto'1'.
ToresetDQ1to'0',issuetheWrite-to-BufferAbortResetcommandtoexittheabortstate.
Apower-off/power-oncycleoraHardwareReset(RST#=0)willalsoclearDQ1.
RY/BY#TheRY/BY#pincanbeusedtodeterminethestatusofaProgramorEraseoperation.
TheRY/BY#pinisvalidaftertherisingedgeofthefinalWE#pulseinthecommandsequence.
IfRY/BY#=0,thenthedeviceisactivelypro-grammingorerasing.
IfRY/BY#=1,thedeviceisinReadmode.
TheRY/BY#pinisanopendrainoutputpin.
ThismeansseveralRY/BY#canbetiedtogetherwithapull-upresistortoVDD.
.
TABLE1:WriteOperationStatusStatusDQ71DQ6DQ21DQ1RY/BY#2NormalOperationStandardProgramDQ7#ToggleNoToggle00StandardErase0ToggleToggleN/A0Erase-SuspendModeReadfromErase-SuspendedSector/Block1NotoggleToggleN/A1ReadfromNon-Erase-SuspendedSector/BlockDataDataDataData1ProgramDQ7#ToggleN/AN/A0ProgramBuffer-to-FlashBusyDQ7#3ToggleN/A00AbortDQ7#3ToggleN/A10T1.
013091.
DQ7andDQ2requireavalidaddresswhenreadingstatusinformation.
2.
RY/BY#isanopendrainpin.
RY/BY#ishighinReadmode,andReadinErase-Suspendmode.
3.
DuringaProgramBuffer-to-Flashoperation,thedatumontheDQ7pinisthecomplementofDQ7ofthelastwordloadedintheWrite-BufferusingtheWrite-to-Buffercommand.
6PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF64042009SiliconStorageTechnology,Inc.
S71309-04-0001/09DataProtectionTheSST38VF6401/6402/6403/6404providebothhard-wareandsoftwarefeaturestoprotectnonvolatiledatafrominadvertentwrites.
HardwareDataProtectionNoise/GlitchProtection:AWE#orCE#pulseoflessthan5nswillnotinitiateawritecycle.
VDDPowerUp/DownDetection:TheWriteoperationisinhibitedwhenVDDislessthan1.
5V.
WriteInhibitMode:ForcingOE#low,CE#high,orWE#highwillinhibittheWriteoperation.
Thispreventsinadvert-entwritesduringpower-uporpower-down.
HardwareBlockProtectionTheSST38VF6402andSST39VF6404devicessupporttophardwareblockprotection,whichprotectsthetopbootblockofthedevice.
ForSST38VF6402,thebootblockcon-sistsofthetop32KWordblock,andforSST39VF6404thebootblockconsistsofthetoptwo4KWordsectors(8KWordtotal).
TheSST38VF6401andSST38VF6403devicessupportbottomhardwareblockprotection,whichprotectsthebot-tombootblockofthedevice.
ForSST38VF6401,thebootblockconsistsofthebottom32KWordblock,andforSST39VF6403theBootBlockconsistsofthebottomtwo4KWordsectors(8KWordtotal).
ThebootblockaddressesaredescribedinTable2.
ProgramandEraseoperationsarepreventedontheBootBlockwhenWP#islow.
IfWP#isleftfloating,itisinternallyheldhighviaapull-upresistor.
WhenWP#ishigh,theBootBlockisunprotected,whichallowsProgramandEraseoperationsonthatarea.
HardwareReset(RST#)TheRST#pinprovidesahardwaremethodofresettingthedevicetoreadarraydata.
WhentheRST#pinisheldlowforatleastTRP,anyin-progressoperationwillterminateandreturntoReadmode.
WhennointernalProgram/Eraseoperationisinprogress,aminimumperiodofTRHRisrequiredafterRST#isdrivenhighbeforeavalidReadcantakeplace.
SeeFigure20formoreinformation.
TheinterruptedEraseorProgramoperationmustbere-ini-tiatedafterthedeviceresumesnormaloperationmodetoensuredataintegrity.
SoftwareDataProtection(SDP)TheSST38VF6401/6402/6403/6404devicesimplementtheJEDECapprovedSoftwareDataProtection(SDP)schemeforalldataalterationoperations,suchasProgramandErase.
ThesedevicesareshippedwiththeSoftwareDataProtectionpermanentlyenabled.
SeeTable11forthespecificsoftwarecommandcodes.
AllProgramoperationsrequiretheinclusionofthethree-bytesequence.
Thethree-byteloadsequenceisusedtoinitiatetheProgramoperation,providingoptimalprotectionfrominadvertentWriteoperations.
SDPforEraseopera-tionsissimilartoProgram,butasix-byteloadsequenceisrequiredforEraseoperations.
DuringSDPcommandsequence,invalidcommandswillabortthedevicetoreadmodewithinTRC.
ThecontentsofDQ15-DQ8canbeVILorVIH,butnoothervalue,duringanySDPcommandsequence.
TheSST38VF6401/6402/6403/6404devicesprovideBypassMode,whichallowsforreducedProgramandErasecommandsequencelengths.
Inthismode,theSDPportionofProgramandErasecommandsequencesareomitted.
See"BypassMode"onpage7forfurtherdetails.
CommonFlashMemoryInterface(CFI)TheSST38VF6401/6402/6403/6404containCommonFlashMemoryInterface(CFI)informationthatdescribesthecharacteristicsofthedevice.
InordertoentertheCFIQuerymode,thesystemcaneitherwriteaone-bytesequenceusingastandardCFIQueryEntrycommand,orathree-byesequenceusingtheSSTCFIQueryEntrycommand.
AcomparisonofthesetwocommandsisshowninTable11.
OncethedeviceenterstheCFIQuerymode,thesystemcanreadCFIdataattheaddressesgiveninTables13through16.
ThesystemmustwritetheCFIExitcommandtoreturntoReadmode.
NotethattheCFIExitcommandisignoredduringaninternalProgramorEraseoperation.
SeeTable11forsoftwarecommandcodes,Figures17and18fortimingwaveform,andFigures27and28forflowcharts.
TABLE2:BootBlockAddressRangesProductSizeAddressRangeBottomBootUniformSST38VF640132KW000000H-007FFFHTopBootUniformSST38VF640232KW3F8000H-3FFFFFHBottomBootNon-UniformSST38VF64038KW000000H-001FFFHTopBootNon-UniformSST38VF64048KW3FE000H-3FFFFFHT2.
01309PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF640472009SiliconStorageTechnology,Inc.
S71309-04-0001/09ProductIdentificationTheProductIdentificationmodeidentifiesthedevicesastheSST38VF6401,SST38VF6402,SST38VF6403,orSST38VF6404,andthemanufacturerasSST.
SeeTable3forspecificaddressanddatainformation.
ProductIdentifi-cationmodeisaccessedthroughsoftwareoperations.
ThesoftwareProductIdentificationoperationsidentifythepart,andcanbeusefulwhenusingmultiplemanufacturersinthesamesocket.
Fordetails,seeTable11forsoftwareoperation,Figure16forthesoftwareIDEntryandReadtimingdiagram,andFigure27forthesoftwareIDEntrycommandsequenceflowchart.
WhileinProductIdentificationmode,theReadBlockPro-tectionStatuscommanddeterminesifablockispro-tected.
Thestatusreturnedindicatesiftheblockhasbeenprotected,butdoesnotdifferentiatebetweenVolatileBlockProtectionandNon-VolatileBlockProtection.
SeeTable11forfurtherdetails.
TheRead-IrreversibleBlock-LockStatuscommandindi-catesiftheIrreversibleBlockCommandhasbeenissued.
IfDQ0=0,thentheIrreversibleLockcommandhasbeenpreviouslyissued.
InordertoreturntothestandardReadmode,thesoftwareProductIdentificationmodemustbeexited.
TheexitisaccomplishedbyissuingthesoftwareIDExitcommandsequence,whichreturnsthedevicetotheReadmode.
SeeTable11forsoftwarecommandcodes,Figure18fortimingwaveform,andFigures27and28forflowcharts.
SecurityIDTheSST38VF6401/6402/6403/6404devicesofferaSecu-rityIDfeature.
TheSecureIDspaceisdividedintotwoseg-ments—onefactoryprogrammed128bitsegmentandoneuserprogrammable256wordsegment.
SeeTable4foraddressinformation.
ThefirstsegmentisprogrammedandlockedatSSTandcontainsa128bitUniqueIDwhichuniquelyidentifiesthedevice.
Theusersegmentisleftun-programmedforthecustomertoprogramasdesired.
TheusersegmentoftheSecurityIDcanbeprogrammedinseveralways.
Forsmallerdatasets,usetheSecurityIDWord-Programcommandforword-programming.
Topro-gramlargersetsofdatamorequickly,usetheSECIDEntrycommandtoentertheSecureIDspace.
OnceintheSecureIDspace,usetheWrite-BufferProgrammingorBypassModefeature.
NotethattheWord-Programmingcommandcanalsobeusedwhileinthismode.
Todetectend-of-writefortheSECID,readthetogglebits.
DonotuseData#PollingtodetectendofWrite.
Oncetheprogrammingiscomplete,locktheSecIDbyissuingtheUserSecIDProgramLock-Outcommandorbyprogram-mingbit'0'inthePSRwiththePSRProgramcommand.
LockingtheSecIDdisablesanycorruptionofthisspace.
NotethatregardlessofwhetherornottheSecIDislocked,theSecIDsegmentscannotbeerased.
TheSecureIDspacecanbequeriedbyexecutingathree-bytecommandsequencewithEnterSecIDcommand(88H)ataddress555Hinthelastbytesequence.
Toexitthismode,theExitSecIDcommandshouldbeexecuted.
RefertoTable11forsoftwarecommandsandFigures27and28forflowcharts.
BypassModeBypassmodeshortensthetimeneededtoissueprogramanderasecommandsbyreducingthesecommandstotwowritecycleseach.
AfterusingtheBypassEntrycommandtoentertheBypassmode,onlytheBypassWord-Program,BypassSectorErase,BypassBlockErase,BypassChipErase,Erase-Suspend,andErase-Resumecommandsareavailable.
TheBypassExitcommandexitsBypassmode.
SeeTable11forfurtherdetails.
EnteringBypassModewhilealreadyinErase-Suspendlim-itstheavailablecommands.
See"Erase-Suspend/Erase-ResumeCommands"onpage4formoreinformation.
TABLE3:ProductIdentificationAddressDataManufacturer'sID0000HBFHDeviceIDSST38VF64010001H536BSST38VF64020001H536ASST38VF64030001H536DSST38VF64040001H536CT3.
01309TABLE4:AddressRangeforSecIDSizeAddressSSTUniqueID128bits000H–007HUser256W100H–1FFHT4.
113098PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF64042009SiliconStorageTechnology,Inc.
S71309-04-0001/09ProtectionSettingsRegister(PSR)TheProtectionSettingsRegister(PSR)isauser-program-mableregisterthatallowsforfurthercustomizationoftheSST38VF6401/6402/6403/6404protectionfeatures.
The16-bitPSRprovidesfourOneTimeProgrammable(OTP)bitsforusers,eachofwhichcanbeprogrammedindividu-ally.
However,onceanOTPbitisprogrammedto'0',thevaluecannotbechangedbacktoa'1'.
Theother12bitsofthePSRarereserved.
SeeTable5forthedefinitionofall16-bitsofthePSR.
NotethatDQ4,DQ2,DQ1,DQ0donothavetobepro-grammedatthesametime.
Inaddition,DQ2andDQ1can-notbothbeprogrammedto'0'.
ThevalidcombinationsofstatesofDQ2andDQ1areshowninTable6.
ThePSRcanbeaccessedbyissuingthePSREntrycom-mand.
UserscanthenusethePSRProgramandPSRReadcommands.
ThePSRExitcommandmustbeissuedtoleavethismode.
SeeTable11forfurtherdetails.
IndividualBlockProtectionTheSST38VF6401/6402/6403/6404providetwomethodsforIndividualBlockprotection:VolatileBlockProtectionandNon-VolatileBlockProtection.
Datainprotectedblockscannotbealtered.
VolatileBlockProtectionTheVolatileBlockProtectionfeatureprovidesafastermethodthanNon-VolatileProtectiontoprotectandunpro-tect32KWordblocks.
Eachblockhasit'sownVolatilePro-tectionBit(VPB).
IntheSST38VF6401/2,the32KWordbootblockalsohasaVPB.
IntheSST38VF6403/4devices,eachofthetwo4KWordsectorsinthe8KWordbootareahasit'sownVPB.
AfterusingtheVolatileBlockProtectionModeEntrycom-mandtoentertheVolatileBlockProtectionmode,individualVPBscanbesetorresetwithVPBSet/Clear,orbereadwithVPBStatusRead.
IftheVPBis'0',thentheblockisprotectedfromProgramandErase.
IftheVPBis'1',thentheblockisunprotected.
TheVolatileBlockProtectionExitcommandmustbeissuedtoexitVolatileBlockProtectionmode.
SeeTable11forfurtherdetailsonthecommandsandFigure31foraflowchart.
Ifthedeviceexperiencesahardwareresetorapowercycle,alltheVPBsreturntotheirdefaultstateasdeter-minedbyuser-programmablebitDQ4inthePSR.
IfDQ4is'0',thenallVPBsdefaultto'0'(protected).
IfDQ4is'1',thenallVPBsdefaultto'1'(unprotected).
Non-VolatileBlockProtectionTheNon-VolatileBlockProtectionfeatureprovidesprotec-tiontoindividualblocksusingNon-VolatileProtectionBits(NVPBs).
Eachblockhasit'sownNon-VolatileProtectionBit.
IntheSST38VF6401/2,the32KWordbootblockalsohasait'sownNVPB.
IntheSST38VF6403/4,each4KWordsectorinthe8KWordbootareahasit'sownNVPB.
AllNVPBscomefromthefactorysetto'1',theunprotectedstate.
UsetheNon-VolatileBlockProtectionModeEntrycom-mandtoentertheNon-VolatileBlockProtectionmode.
Onceinthismode,theNVPBProgramcommandcanbeusedtoprotectindividualblocksbysettingindividualNVPBsto'0'.
ThetimeneededtoprogramanNVPBistwotimesTBP,whichisamaximumof20s.
TheNVPBStatusReadcommandcanbeusedtochecktheprotectionstateofanindividualNVPB.
TochangeanNVPBto'1',theunprotectedstate,theNVPBmustbeerasedusingNVPBsErasecommand.
ThiscommanderasesallNVPBsto'1'.
NVPBProgramTABLE5:PSRBitDefinitionsBitDefaultfromFactoryDefinitionDQ15-DQ5FFFhReservedDQ41VPBpower-up/hardwareresetstate0=allprotected1=allunprotectedDQ31ReservedDQ21Passwordmode0=Passwordonlymode1=Pass-ThroughmodeDQ11Pass-Throughmode0=Pass-Throughonlymode1=Pass-ThroughmodeDQ01SECIDLockOutBit0=locked1=unlockedT5.
01309TABLE6:ValidDQ2andDQ1CombinationsCombinationDefinitionDQ2,DQ1=11Pass-Throughmode(factorydefault)DQ2,DQ1=10Pass-ThroughonlymodeDQ2,DQ1=01PasswordonlymodeDQ2,DQ1=00NotAllowedT6.
01309PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF640492009SiliconStorageTechnology,Inc.
S71309-04-0001/09shouldbeusedtosettheNVPBsofanyblocksthataretobeprotectedbeforeexitingtheNon-VolatileBlockProtec-tionmode.
SeeTable11andFigure32forfurtherdetails.
Uponapowercycleorhardwarereset,theNVPBsretaintheirstates.
MemoryareasthatareprotectedusingNon-VolatileBlockProtectionremainprotected.
TheNVPBPro-gramandNVPBsErasecommandsarepermanentlydis-abledoncetheIrreversibleBlockLockcommandisissued.
See"IrreversibleBlockLocking"onpage10forfurtherinformation.
AdvancedProtectionTheSST38VF6401/6402/6403/6404provideAdvancedProtectionfeaturesthatallowuserstoimplementcondi-tionalaccesstotheNVPBs.
Specifically,AdvancedProtec-tionusestheGlobalLockBittoprotecttheNVPBs.
IftheGlobalLockbitis'0'thenalltheNVPBsstatesarefrozenandcannotbemodifiedinanymode.
IftheGlobalLockbitis'1',thenalltheNVPBscanbemodifiedinNon-VolatileBlockProtectionmode.
AfterusingtheGlobalLockofNVPBsEntrycommandtoentertheGlobalLockofNVPBsmode,theGlobalLockBitcanbeactivatedbyissuingaSetGlobalLockBitcommand,whichsetstheGlobalLockBitto'0'.
TheGlobalLockbitcannotbesetto'1'withthiscom-mand.
ThestatusofthebitcanbereadwiththeGlobalLockBitStatuscommand.
UsetheGlobalLockofNVPBsExitcommandtoexitGlobalLockofNVPBsmode.
SeeTable11andFigure33forfurtherdetails.
ThestepsusedtochangetheGlobalLockBitfrom'0'to'1,'toallowaccesstotheNVPBs,dependonwhetherthedevicehasbeensettousePass-ThroughorPasswordmode.
WhenusingAdvancedProtection,selecteitherPass-ThroughonlymodeorPasswordonlymodebypro-grammingtheDQ2andDQ1bitsinthePSR.
AlthoughthefactorydefaultisPass-Throughmode(DQ2=1,DQ1=1),theusershouldexplicitlychoseeitherPass-Throughonlymode(DQ2=1,DQ1=0),orPasswordonlymode(DQ2=0,DQ1=1).
KeepingtheSST38VF6401/6402/6403/6404inthefactorydefaultPass-ThroughmodeleavesthedeviceopentounauthorizedchangesofDQ2andDQ1inthePSR.
See"ProtectionSettingsRegister(PSR)"onpage8.
formoreinformationaboutthePSR.
Pass-ThroughMode(DQ2,DQ1=1,0)ThePass-ThroughModeallowstheGlobalLockBitstatetobeclearedto'1'byapower-downpower-upsequenceorahardwarereset(RST#pin=0).
NopasswordisrequiredinPass-Throughmode.
TosettheGlobalLockBitto'0',usetheSetGlobalLockBitcommandwhileintheGlobalLockofNVPBsmode.
SelectthePass-ThroughonlymodebyprogrammingPSRbitDQ2=1andDQ1=0.
PasswordMode(DQ2,DQ1=0,1)InthePasswordMode,theGlobalLockBitissetto'0'bytheSetGlobalLockBitcommand,apower-downpower-upsequence,orahardwarereset(RST#pin=0).
SelectthePasswordonlymodebyprogrammingPSRbitDQ2=0andDQ1=1.
NotethatwhenthePSRProgramcommandisissuedinPasswordmode,theGlobalLockbitisauto-maticallysetto'0'.
IncontrasttothePass-ThroughMode,inthePasswordmode,theonlywaytocleartheGlobalLockBitto'1'istosubmitthecorrect64-bitpasswordusingtheSubmitPass-wordcommandinPasswordCommandsMode.
Thewordsofthepasswordcanbesubmittedinanyorderaslongaseach16bitsectionofthepasswordismatchedwithitscor-rectaddress.
Aftertheentire64bitpasswordissubmitted,thedevicetakesapproximately2stoverifythepassword.
AsubsequentSubmitPasswordcommandcannotbeissueduntilthisverificationtimehaselapsed.
The64-bitpasswordmustbechosenbytheuserbeforeprogrammingtheDQ2andDQ1OTPbitsofthePSRtochoosePasswordMode.
Thedefault64bitpasswordonthedevicefromthefactoryisFFFFFFFFFFFFFFFFh.
EnterthePasswordCommandsmodebyissuingthePass-wordCommandsEntrycommand.
Then,usethePass-wordProgramcommandtoprogramthedesiredpassword.
UsecautionwhenprogrammingthepasswordbecausethereisnomethodtoresetthepasswordtoFFFFFFFFFFFFFFFFh.
Onceapasswordbithasbeensetto'0',itcannotbechangedbackto'1'.
SeeTable11forfur-therdetailsaboutPassword-relatedcommands.
ThepasswordcanbereadusingthePasswordReadcom-mandtoverifythedesiredpasswordhasbeenpro-grammed.
SSTrecommendstestingthepasswordbeforepermanentlychoosingPasswordMode.
Totestthepassword,dothefollowing:1.
EntertheGlobalLockofNVPBsmode.
2.
SettheGlobalLockBitto'0',andverifythevalue.
3.
ExittheGlobalLockofNVPBsmode.
4.
EnterthePasswordCommandsmode.
5.
Submitthe64-bitpasswordwiththeSubmitPass-wordcommand.
6.
Wait2sforthedevicetoverifythepassword.
7.
ExitthePasswordCommandsmode.
8.
Re-entertheGlobalLockofNVPBsmode10PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF64042009SiliconStorageTechnology,Inc.
S71309-04-0001/099.
ReadtheGlobalLockBitwiththeGlobalLockBitStatusReadcommand.
TheGlobalLockbitshouldnowbe'1'.
Afterverifyingthepassword,programtheDQ2andDQ1OTPbitsofthePSRtoexplicitlychoosePasswordmode.
OncethePasswordmodehasbeenselected,thePass-wordReadandPasswordProgramcommandsareperma-nentlydisabled.
Thereisnolongeranymethodforreadingormodifyingthepassword.
Inaddition,SSTisunabletoreadormodifythepassword.
IfaPasswordReadcom-mandisissuedwhileinPasswordmode,thedatapre-sentedforeachwordofthepasswordisFFFFh.
IfthePasswordModeisnotexplicitlychoseninthePSR,thenthepasswordcanstillbereadandmodified.
There-fore,SSTstronglyrecommendsthatusersexplicitlychoosePasswordModeinthePSR.
IrreversibleBlockLockingTheSST38VF6401/6402/6403/6404providesIrreversibleBlockLocking,afeaturethatallowsuserstocustomizethesizeofRead-OnlyMemory(ROM)onthedeviceandpro-videsmoreflexibilitythanOne-TimeProgrammable(OTP)memory.
ApplyingIrreversibleBlockLockingturnsuser-selectedmemoryareasintoROMbypermanentlydisablingPro-gramandEraseoperationstothesechosenareas.
AnyareathatbecomesROMcannotbechangedbacktoFlash.
Anymemoryblocksinthemainmemory,includingbootblocks,canbeirreversiblylocked.
Innon-uniformbootblockdevices(SST38VF6403andSST38VF6404)each4KWsectorinthebootareacanbeirreversiblylocked.
Ifdesired,allblocksinthemainmemorycanbeirreversiblylocked.
TouseIrreversibleBlockLockingdothefollowing:1.
GlobalLockBitshouldbe'1'.
TheIrreversibleBlockLockcommandisdisabledwhenGlobalLockBitis'0'.
2.
EntertheNon-VolatileBlockProtectionmode.
3.
UsetheNVPBProgramcommandtoprotectonlytheblocksthataretobechangedintoROM.
4.
ExittheNon-VolatileBlockProtectionmode.
5.
IssuetheIrreversibleBlockLockcommand(seeTable11fordetails).
TheIrreversibleBlockLockcommandcanonlybeusedonce.
Issuingthecommandafterthefirsttimehasnoeffectonthedevice.
Important:OncetheIrreversibleBlockLockcommandisused,thestateoftheNVPBscannolongerbechangedoroverridden.
Therefore,thefollowingfeaturesnolongerhaveanyeffectonthedevice:GlobalLockofNVPBsfeaturePasswordfeatureNVPBProgramcommandNVPBErasecommandDQ2andDQ1ofPSRInaddition,WP#hasnoeffectonanymemoryinthebootblockareathathasbeenirreversiblylocked.
ToverifywhethertheIrreversibleBlockLockcommandhasalreadybeenissued,entertheProductIDmodeandreadaddress5FEH.
IfDQ0=0,thenIrreversibleBlockLockhasalreadybeenexecuted.
Whenusingthisfeaturetodeter-mineifaspecificblockisROM,usetheNVPBStatusRead.
PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF6404112009SiliconStorageTechnology,Inc.
S71309-04-0001/09FUNCTIONALBLOCKDIAGRAMFIGURE1:FunctionalBlockDiagramY-DecoderI/OBuffersandDataLatches1309B1.
1AddressBuffer&LatchesX-DecoderDQ15-DQ0MemoryAddressOE#CE#WE#SuperFlashMemoryControlLogicWP#RESET#RY/BY#12PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF64042009SiliconStorageTechnology,Inc.
S71309-04-0001/09PINASSIGNMENTSFIGURE2:PinAssignmentsfor48-leadTSOPFIGURE3:Pinassignmentsfor48-ballTFBGAA15A14A13A12A11A10A9A8A19A20WE#RST#A21WP#RY/BY#A18A17A7A6A5A4A3A2A1123456789101112131415161718192021222324A16NCVSSDQ15DQ7DQ14DQ6DQ13DQ5DQ12DQ4VDDDQ11DQ3DQ10DQ2DQ9DQ1DQ8DQ0OE#VSSCE#A0484746454443424140393837363534333231302928272625130948-tsopP1.
0StandardPinoutTopViewDieUp130948-tfbgaP1.
0ABCDEFGH654321TOPVIEW(ballsfacingdown)A13A9WE#RY/BY#A7A3A12A8RST#WP#A17A4A14A10A21A18A6A2A15A11A19A20A5A1A16DQ7DQ5DQ2DQ0A0NCDQ14DQ12DQ10DQ8CE#DQ15DQ13VDDDQ11DQ9OE#VSSDQ6DQ4DQ3DQ1VSSPreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF6404132009SiliconStorageTechnology,Inc.
S71309-04-0001/09TABLE7:PinDescriptionSymbolPinNameFunctionsAMS1-A0AddressInputsToprovidememoryaddresses.
DuringSector-EraseAMS-A12addresslineswillselectthesector.
DuringBlock-EraseAMS-A15addresslineswillselecttheblock.
DQ15-DQ0DataInput/outputTooutputdataduringReadcyclesandreceiveinputdataduringWritecycles.
DataisinternallylatchedduringaWritecycle.
Theoutputsareintri-statewhenOE#orCE#ishigh.
WP#WriteProtectToprotectthetop/bottombootblockfromErase/Programoperationwhengrounded.
RY/BY#Ready/BusyToindicatewhenthedeviceisactivelyprogrammingorerasing.
RST#ResetToresetandreturnthedevicetoReadmode.
CE#ChipEnableToactivatethedevicewhenCE#islow.
OE#OutputEnableTogatethedataoutputbuffers.
WE#WriteEnableTocontroltheWriteoperations.
VDDPowerSupplyToprovidepowersupplyvoltage:2.
7-3.
6VVSSGroundNCNoConnectionUnconnectedpins.
T7.
013091.
AMS=MostsignificantaddressAMS=A21forSST38VF6401/6402/6403/640414PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF64042009SiliconStorageTechnology,Inc.
S71309-04-0001/09MEMORYMAPSTABLE8:SST38VF6401andSST38VF6402MemoryMapsSST38VF6401Block1,21.
Eachblock,B0-B127is32KWord.
2.
Eachblockconsistsofeightsectors.
Sectors33.
Eachsector,S0-S1023is4KWord.
AddressA21-A1244.
X=0or1.
BlockAddress(BA)=A21-A15;SectorAddress(SA)=A21-A12VPB55.
EachblockhasanassociatedVPBandNVPB.
NVPB5WP#66.
BlockB0isthebootblock.
B06S0-S70000000XXXYESYESYESB1S8-S150000001XXXYESYESNOB2S16-S230000010XXXYESYESNOB3S24-S310000011XXXYESYESNOB4S32-S390000100XXXYESYESNOB5S40-S470000101XXXYESYESNOB6S48-S550000110XXXYESYESNOB7S56-S630000111XXXYESYESNOB8-B119followthesamepatternB120S960-S9671111000XXXYESYESNOB121S968-S9751111001XXXYESYESNOB122S976-S9831111010XXXYESYESNOB123S984-S9911111011XXXYESYESNOB124S992-S9991111100XXXYESYESNOB125S1000-S10071111101XXXYESYESNOB126S1008-S10151111110XXXYESYESNOB127S1016-S10231111111XXXYESYESNOSST38VF6402Block1,2Sectors3AddressA21-A124VPB5NVPB5WP#77.
BlockB127isthebootblock.
B0S0-S70000000XXXYESYESNOB1S8-S150000001XXXYESYESNOB2S16-S230000010XXXYESYESNOB3S24-S310000011XXXYESYESNOB4S32-S390000100XXXYESYESNOB5S40-S470000101XXXYESYESNOB6S48-S550000110XXXYESYESNOB7S56-S630000111XXXYESYESNOB8-B119followthesamepatternB120S960-S9671111000XXXYESYESNOB121S968-S9751111001XXXYESYESNOB122S976-S9831111010XXXYESYESNOB123S984-S9911111011XXXYESYESNOB124S992-S9991111100XXXYESYESNOB125S1000-S10071111101XXXYESYESNOB126S1008-S10151111110XXXYESYESNOB1277S1016-S10231111111XXXYESYESYEST8.
01309PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF6404152009SiliconStorageTechnology,Inc.
S71309-04-0001/09TABLE9:SST38VF6403andSST38VF6404MemoryMaps(1of2)SST38VF6403Block1,2Sectors3AddressA21-A124VPB5NVPB5WP#6B05,6S00000000000YESYESYESS10000000001YESYESYESS20000000010YESYESNOS30000000011YESYESNOS40000000100YESYESNOS50000000101YESYESNOS60000000110YESYESNOS70000000111YESYESNOB1S8-S150000001XXXYESYESNOB2S16-S230000010XXXYESYESNOB3S24-S310000011XXXYESYESNOB4S32-S390000100XXXYESYESNOB5S40-S470000101XXXYESYESNOB6S48-S550000110XXXYESYESNOB7S56-S630000111XXXYESYESNOB8-B119followthesamepatternB120S960-S9671111000XXXYESYESNOB121S968-S9751111001XXXYESYESNOB122S976-S9831111010XXXYESYESNOB123S984-S9911111011XXXYESYESNOB124S992-S9991111100XXXYESYESNOB125S1000-S10071111101XXXYESYESNOB126S1008-S10151111110XXXYESYESNOB127S1016-S10231111111XXXYESYESNOSST38VF6404Block1,2Sectors3AddressA21-A124VPB5NVPB5WP#7B0S0-S70000000XXXYESYESNOB1S8-S150000001XXXYESYESNOB2S16-S230000010XXXYESYESNOB3S24-S310000011XXXYESYESNOB4S32-S390000100XXXYESYESNOB5S40-S470000101XXXYESYESNOB6S48-S550000110XXXYESYESNOB7S56-S630000111XXXYESYESNOB8-B119followthesamepatternB120S960-S9671111000XXXYESYESNOB121S968-S9751111001XXXYESYESNOB122S976-S9831111010XXXYESYESNOB123S984-S9911111011XXXYESYESNOB124S992-S9991111100XXXYESYESNOB125S1000-S10071111101XXXYESYESNOB126S1008-S10151111110XXXYESYESNO16PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF64042009SiliconStorageTechnology,Inc.
S71309-04-0001/09Block1,2Sectors3AddressA21-A124VPB5NVPB5WP#7B1275,7S10161111111000YESYESNOS10171111111001YESYESNOS10181111111010YESYESNOS10191111111011YESYESNOS10201111111100YESYESNOS10211111111101YESYESNOS10221111111110YESYESYESS10231111111111YESYESYEST9.
013091.
Eachblock,B0-B127is32KWord.
2.
Eachblockconsistsofeightsectors.
3.
Eachsector,S0-S1023is4KWord.
4.
X=0or1.
BlockAddress(BA)=A21-A15;SectorAddress(SA)=A21-A125.
EachblockhasanassociatedVPBandNVPB,exceptforsomeblocksinSST39VF6403andSST39VF6404.
InSST39VF6403,BlockB0doesnothaveasingleVPBorNVPBforall32KWords.
Instead,eachsector(4KWord)inBlockB0hasitsownVPBandNVPB.
InSST39VF6404,BlockB127doesnothaveasingleVPBorNVPBforall32KWords.
Instead,eachsector(4KWord)inBlockB127hasitsownVPBandNVPB.
6.
The8KWordbootblockconsistsofS0andS1inBlockB0.
7.
The8KWordbootblockconsistsofS1022andS1023inBlockB127.
TABLE9:SST38VF6403andSST38VF6404MemoryMaps(Continued)(2of2)PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF6404172009SiliconStorageTechnology,Inc.
S71309-04-0001/09OPERATIONSTABLE10:OperationModesSelectionModeCE#OE#WE#RST#WP#DQAddressReadVILVILVIHHXDOUTAINProgramVILVIHVILHVIL/VIH11.
WP#canbeVILwhenprogrammingorerasingoutsideofthebootblock.
WP#mustbeVIHwhenprogrammingorerasinginsidethebootblockarea.
DINAINEraseVILVIHVILHVIL/VIH1X22.
XcanbeVILorVIH,butnoothervalue.
Sectororblockaddress,XXHforChip-EraseStandbyVIHXXVIHXHighZXWriteInhibitXVILXXXHighZ/DOUTXProductIdentificationXXVIHHXHighZ/DOUTXResetXXXLXHighZXSoftwareModeVILVIHVILHXSeeTable11SeeTable11T10.
0130918PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF64042009SiliconStorageTechnology,Inc.
S71309-04-0001/09TABLE11:SoftwareCommandSequence(1of3)CommandSequence1stBusCycle2ndBusCycle3rdBusCycle4thBusCycle5thBusCycle6thBusCycle7thBusCycleAddr1Data2Addr1Data2Addr1Data2Addr1Data2Addr1Data2Addr1Data2Addr1Data2Read3WADataPageRead3WA0Data0WA1Data1WA2Data2WA3Data3Word-Program555HAAH2AAH55H555HA0HWADataWrite-BufferProgrammingWrite-to-Buffer4555HAAH2AAH55HBA25HBAWCWAXDataWAXDataWAXDataProgramBuffer-to-FlashBAX29HWrite-to-BufferAbort-Reset555HAAH2AAH55H555HF0HBypassMode5BypassModeEntry555HAAH2AAH55H555H20HBypassWord-ProgramXXXHA0HWADataBypassSectorEraseXXXH80HSA50HBypassBlockEraseXXXH80HBA30HBypassChipEraseXXXH80H555H10HBypassModeExitXXXH90HXXXH00HEraseRelatedSector-Erase555HAAH2AAH55H555H80H555HAAH2AAH55HSAX50HBlock-Erase6555HAAH2AAH55H555H80H555HAAH2AAH55HBAx30HChip-Erase555HAAH2AAH55H555H80H555HAAH2AAH55H555H10HEraseSuspendXXXHB0HEraseResumeXXXH30HSecurityIDSECIDEntry7555HAAH2AAH55H555H88HSECIDRead3,8WAXDataSECIDExit555HAAH2AAH55H555H90HXXH00HSoftwareIDExit/CFIExit/SECIDExit9555HAAH2AAH55H555HF0HSoftwareIDExit/CFIExit/SECIDExit9XXHF0HUserSecurityIDWord-Pro-gram10555HAAH2AAH55H555HA5HWAXDataUserSecurityIDProgramLock-Out555HAAH2AAH55H555H85HXXH0000HPreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF6404192009SiliconStorageTechnology,Inc.
S71309-04-0001/09ProductIdentificationSoftwareIDEntry11555HAAH2AAH55H555H90HManufacturerID3,12X00BFHDeviceID3,12X01DataReadBlockProtectionStatus3BAX0213Data14ReadIrrevers-ibleBlockLockStatus35FEHData15ReadGlobalLockBitStatus39FFHData16SoftwareIDExit/CFIExit/SECIDExit9555HAAH2AAH55H555HF0HSoftwareIDExit/CFIExit/SECIDExit9XXHF0HVolatileBlockProtectionVolatileBlockProtectionModeEntry555HAAH2AAH55H555HE0HVolatileProtec-tionBit(VPB)Set/ClearXXHA0HBAX17Data18VPBStatusRead3BAXData18VolatileBlockProtectionModeExitXXH90HXXH00HNon-VolatileBlockProtectionNon-VolatileBlockProtec-tionModeEntry555HAAH2AAH55H555HC0HNon-VolatileProtectBit(NVPB)ProgramXXHA0HBAX1700HNon-VolatileProtectBits(NVPB)Erase19XXH80H00H30HNVPBStatusRead3BAX17Data18Non-VolatileBlockProtec-tionModeExitXXH90HXXH00HTABLE11:SoftwareCommandSequence(Continued)(2of3)CommandSequence1stBusCycle2ndBusCycle3rdBusCycle4thBusCycle5thBusCycle6thBusCycle7thBusCycleAddr1Data2Addr1Data2Addr1Data2Addr1Data2Addr1Data2Addr1Data2Addr1Data220PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF64042009SiliconStorageTechnology,Inc.
S71309-04-0001/09GlobalLockofNVPBsGlobalLockofNVPBsEntry555HAAH2AAH55H555H50HSetGlobalLockBitXXHA0HXXH00HGlobalLockBitStatusRead3XXXHData16GlobalLockofNVPBsExitXXH90HXXH00HPasswordCommandsPasswordCom-mandsModeEntry555HAAH2AAH55H555H60HPasswordPro-gram20XXHA0HPWAXPWDxPasswordRead3PWAXPWDXSubmitPass-word2100H25H00H03H00HPWD001HPWD102HPWD203HPWD300H29HPasswordCom-mandsModeExitXXH90HXXH00HProgramandSettingsRegister(PSR)PSREntry555HAAH2AAH55H555H40HPSRProgram22XXHA0HXXXHDataPSRRead3XXHDataPSRExitXXH90HXXH00HCFICFIQueryEntry2355H98HSSTCFIQueryEntry23555HAAH2AAH55H555H98HSoftwareIDExit/CFIExit/SECIDExit9555HAAH2AAH55H555HF0HSoftwareIDExit/CFIExit/SECIDExit9XXHF0HIrreversibleBlockLockIrreversibleBlockLock24555HAAH2AAH55H555H87HXXH00HT11.
013091.
AddressformatA10-A0(Hex).
AddressesA11-A21canbeVILorVIH,butnoothervalue,fortheSST38VF6401/6402/6403/6404com-mandsequence.
2.
DQ15-DQ8canbeVILorVIH,butnoothervalue,forcommandsequence3.
AllreadcommandsareinBoldItalics.
4.
Totalnumberofcyclesinthiscommandsequencedependsonthenumberofwordstobewrittentothebuffer.
AdditionalwordsarewrittenbyrepeatingWriteCycle5.
Address(WAX)valuesforWriteCycle6andlatermusthavethesameA21-A4valuesasWAXinWriteCycle5.
WC=WordCount.
ThevalueofWCisthenumberofwordstobewrittenintothebuffer,minus1.
MaximumWCvalueis15(i.
e.
FHex)5.
Erase-SuspendandErase-ResumecommandsarealsoavailableinBypassMode.
TABLE11:SoftwareCommandSequence(Continued)(3of3)CommandSequence1stBusCycle2ndBusCycle3rdBusCycle4thBusCycle5thBusCycle6thBusCycle7thBusCycleAddr1Data2Addr1Data2Addr1Data2Addr1Data2Addr1Data2Addr1Data2Addr1Data2PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF6404212009SiliconStorageTechnology,Inc.
S71309-04-0001/09Note:Table11usesthefollowingabbreviations:X=Don'tcare(VILorVIH,butnoothervalue.
SAX=SectorAddress;usesAMS-A12addresslinesBAX=BlockAddress;usesAMS-A15addresslinesWA=WordAddressWC=WordCountPWAX=PasswordAddress;PWAX=PWA0,PWA1,PWA2orPWA3;A1andA0areusedtoselecteach16-bitportionofthepasswordPWDX=PasswordData;PWDX=PSWD0,PWD1,PWD2,orPWD3AMS=MostsignificantAddress6.
ForSST39VF6403,Sector-EraseorBlock-ErasecanbeusedtoerasesectorsS1016-S1023.
UseaddressSAx.
BlockErasecan-notbeusedtoeraseall32kWofBlockB127.
ForSST39VF6404,Sector-EraseorBlock-ErasecanbeusedtoerasesectorsS0-S7.
UseaddressSAx.
BlockErasecannotbeusedtoeraseall32kWofBlockB0.
7.
OnceinSECIDmode,theWord-Program,Write-BufferProgramming,andBypassWord-ProgramfeaturescanbeusedtoprogramtheSECIDarea.
8.
SSTUniqueIDisreadwithA3=0(Addressrange=000000Hto000007H),UserportionofSECIDisreadwithA8=1(Addressrange=000100Hto0001FFH).
Lock-outStatusisreadwithA7-A0=FFH.
Unlocked:DQ3=1/Locked:DQ3=0.
LockstatuscanalsobecheckedbyreadingBit'0'inthePSR.
9.
BothSoftwareIDExitoperationsareequivalent10.
Ifbitsarenotlocked,thentheuser-programmableportionoftheSecIDcanbeprogrammedoverthepreviouslyunprogrammedbits(Data=1)usingtheSecIDmodeagain(bitsprogrammed'0'cannotbereversedto'1').
ValidWord-Addressesfortheuser-program-mableportionoftheSecIDarefrom000100H-0001FFH.
11.
ThedevicedoesnotremaininSoftwareProductIDModeifpowereddown.
12.
WithAMS-A1=0;SSTManufacturerID=00BFH,isreadwithA0=0,SST38VF6401DeviceID=536B,isreadwithA0=1,SST38VF6402DeviceID=536A,isreadwithA0=1,SST38VF6403DeviceID=536D,isreadywithA0=1,SST38VF6404DeviceID=536C,isreadwithA0=1.
13.
BAX02:AMS-A15=BlockAddress;A14-A8=xxxxxx;A7-A0=0214.
Data=00Hunprotectedblock;Data=01Hprotectedblock.
15.
DQ0=0meanstheIrreversibleBlockLockcommandhasbeenpreviouslyused.
DQ0=1meanstheIrreversibleBlockLockcom-mandhasnotyetbeenused.
16.
DQ0=0meansthattheGlobalLockBitislocked.
DQ0=1meansthattheGlobalLockBitisunlocked.
17.
ForNon-UniformBootBlockdevices(i.
e.
8KWordsize),inthebootarea,useSAX=SectorAddress(sectorsize=4KWord).
18.
DQ0=0meansprotected;DQ0=1meansunprotected19.
ErasesallNVPBsto'1'(unprotected)20.
Entiretwo-buscyclesequencemustbeenteredforeachportionofthepassword.
21.
Entirepasswordsequencerequiredforvalidation.
Thewordorderdoesn'tmatteraslongastheAddressandDatapairmatch.
22.
Reservedregisterbits(DQ15-DQ5andDQ3)mustbe'1'duringprogram.
23.
CFIQueryEntryandSSTCFIQueryEntryareequivalent.
BothallowaccesstothesameCFItables.
24.
GlobalLockBitmustbe'1'beforeexecutingthiscommand.
22PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF64042009SiliconStorageTechnology,Inc.
S71309-04-0001/09TABLE12:ProtectionPriorityforMainArrayNVPB1VPB1ProtectionStateofBlockprotectXprotectedXprotectprotectedunprotectunprotectunprotectedT12.
013091.
X=protectorunprotectTABLE13:CFIQueryIdentificationString1forSST38VF6401/6402/6403/64041.
RefertoCFIpublication100formoredetails.
AddressDataDescription10H0051HQueryUniqueASCIIstring"QRY"11H0052H12H0059H13H0002HPrimaryOEMcommandset14H0000H15H0040HAddressforPrimaryExtendedTable16H0000H17H0000HAlternateOEMcommandset(00H=noneexists)18H0000H19H0000HAddressforAlternateOEMExtendedTable(00H=noneexits)1AH0000HT13.
01309PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF6404232009SiliconStorageTechnology,Inc.
S71309-04-0001/09TABLE14:SystemInterfaceInformationforSST38VF6401/6402/6403/6404AddressDataDescription1BH0027HVDDMin(Program/Erase)DQ7-DQ4:Volts,DQ3-DQ0:100millivolts1CH0036HVDDMax(Program/Erase)DQ7-DQ4:Volts,DQ3-DQ0:100millivolts1DH0000HVPPmin.
(00H=noVPPpin)1EH0000HVPPmax.
(00H=noVPPpin)1FH0003HTypicaltimeoutforWord-Program2Ns(23=8s)20H0003HTypicaltimeoutformin.
sizebufferprogram2Ns(00H=notsupported)21H0004HTypicaltimeoutforindividualSector/Block-Erase2Nms(24=16ms)22H0005HTypicaltimeoutforChip-Erase2Nms(25=32ms)23H0001HMaximumtimeoutforWord-Program2Ntimestypical(21x23=16s)24H0003HMaximumtimeoutforbufferprogram2Ntimestypical25H0001HMaximumtimeoutforindividualSector/Block-Erase2Ntimestypical(21x24=32ms)26H0001HMaximumtimeoutforChip-Erase2Ntimestypical(21x25=64ms)T14.
01309TABLE15:DeviceGeometryInformationforSST38VF6401/6402/6403/6404AddressDataDescription27H0017HDevicesize=2NBytes(17H=23;223=8MByte)28H0001HFlashDeviceInterfacedescription;0001H=x16-onlyasynchronousinterface29H0000H2AH0005HMaximumnumberofbytesinmulti-bytewrite=2N(00H=notsupported)2BH0000H2CH0002HNumberofEraseSector/Blocksizessupportedbydevice2DH00FFHSectorInformation(y+1=Numberofsectors;zx256B=sectorsize)2EH0003Hy=2047+1=2048sectors(03FFH=1023)2FH0000H30H0001Hz=32x256Bytes=8KBytes/sector(0100H=32)31H007FHBlockInformation(y+1=Numberofblocks;zx256B=blocksize)32H0000Hy=127+1=128blocks(007FH=127)33H0000H34H0001Hz=256x256Bytes=64KBytes/block(0100H=256)T15.
1130924PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF64042009SiliconStorageTechnology,Inc.
S71309-04-0001/09TABLE16:PrimaryVendor-SpecificExtendedInformationforSST38VF6401/6402/6403/6404AddressDataDescription40H0050H41H0052HQuery-uniqueASCIIstring"PRI"42H0049H43HFFFFHReserved44HFFFFHReserved45H0000HReserved46H0002HEraseSuspend0=Notsupported,1=OnlyreadduringEraseSuspend,2=ReadandProgramduringEraseSuspend.
47H0001HIndividualBlockProtection0=Notsupported,1=Supported48H0000HReserved49H0008HProtection0008H=Advanced4AH0000HSimultaneousOperation00=Notsupported4BH0000HBurstMode00=Notsupported4CH0001HPageMode00=Notsupported,01=4Wordpage.
4DH0000HAccelerationSupplyMinimum00=Notsupported4EH0000HAccelerationSupplyMaximum00=Notsupported4FH00XXHTop/BottomBootBlock02H=8KWordBottomBoot03H=8KWordTopBoot04H=Uniform(32KWord)BottomBoot05H=Uniform(32KWord)TopBoot50H0000HProgramSuspend00H=NotSupported,01H=SupportedT16.
11309PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF6404252009SiliconStorageTechnology,Inc.
S71309-04-0001/09AbsoluteMaximumStressRatings(Appliedconditionsgreaterthanthoselistedunder"AbsoluteMaximumStressRatings"maycausepermanentdamagetothedevice.
Thisisastressratingonlyandfunctionaloperationofthedeviceattheseconditionsorconditionsgreaterthanthosedefinedintheoperationalsectionsofthisdatasheetisnotimplied.
Exposuretoabsolutemaximumstressratingconditionsmayaffectdevicereliability.
)TemperatureUnderBias55°Cto+125°CStorageTemperature65°Cto+150°CD.
C.
VoltageonAnyPintoGroundPotential0.
5VtoVDD+0.
5VTransientVoltage(100sVDDmin0VVIHTRHR>50nsPreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF6404272009SiliconStorageTechnology,Inc.
S71309-04-0001/09DCCharacteristicsTABLE18:DCOperatingCharacteristicsVDD=2.
7-3.
6V1SymbolParameterLimitsTestConditionsMinMaxUnitsIDDPowerSupplyCurrentAddressinput=VILT/VIHT2,VDD=VDDMaxRead318mACE#=VIL,OE#=WE#=VIHatf=5MHzIntra-PageRead@5MHz2.
5mACE#=VIL,OE#=WE#=VIHIntra-PageRead@40MHz20mACE#=VIL,OE#=WE#=VIHProgramandErase35mACE#=WE#=VIL,OE#=VIHProgram-Write-Buffer-to-Flash50mACE#=WE#=VIL,OE#=VIHISBStandbyVDDCurrent30ACE#=VIHC,VDD=VDDMaxIALPAutoLowPower20ACE#=VILC,VDD=VDDMaxAllinputs=VSSorVDD,WE#=VIHCILIInputLeakageCurrent1AVIN=GNDtoVDD,VDD=VDDMaxILIWInputLeakageCurrentonWP#pinandRST#10AWP#=GNDtoVDDorRST#=GNDtoVDDILOOutputLeakageCurrent10AVOUT=GNDtoVDD,VDD=VDDMaxVILInputLowVoltage0.
8VVDD=VDDMinVILCInputLowVoltage(CMOS)0.
3VVDD=VDDMaxVIHInputHighVoltage0.
7VDDVVDD=VDDMaxVIHCInputHighVoltage(CMOS)VDD-0.
3VVDD=VDDMaxVOLOutputLowVoltage0.
2VIOL=100A,VDD=VDDMinVOHOutputHighVoltageVDD-0.
2VIOH=-100A,VDD=VDDMinT18.
013091.
TypicalconditionsfortheActiveCurrentshownonthefrontpageofthedatasheetareaveragevaluesat25°C(roomtemperature),andVDD=3V.
Not100%tested.
2.
SeeFigure273.
TheIDDcurrentlistedistypicallylessthan2mA/MHz,withOE#atVIH.
TypicalVDDis3V.
TABLE19:Capacitance(TA=25°C,f=1Mhz,otherpinsopen)ParameterDescriptionTestConditionMaximumCI/O11.
Thisparameterismeasuredonlyforinitialqualificationandafteradesignorprocesschangethatcouldaffectthisparameter.
I/OPinCapacitanceVI/O=0V12pFCIN1InputCapacitanceVIN=0V6pFT19.
01309TABLE20:ReliabilityCharacteristicsSymbolParameterMinimumSpecificationUnitsTestMethodNEND1,21.
Thisparameterismeasuredonlyforinitialqualificationandafteradesignorprocesschangethatcouldaffectthisparameter.
2.
NENDenduranceratingisqualifiedas10,000cyclesminimumforSST38VF640x-90-4xand100,000cyclesminimumperblockforSST38VF640x-90-5x.
Endurance100,000CyclesJEDECStandardA117TDR1DataRetention100YearsJEDECStandardA103ILTH1LatchUp100+IDDmAJEDECStandard78T20.
0130928PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF64042009SiliconStorageTechnology,Inc.
S71309-04-0001/09ACCHARACTERISTICSTABLE21:ReadCycleTimingParametersVDD=2.
7-3.
6VSymbolParameterMinMaxUnitsTRCReadCycleTime90nsTCEChipEnableAccessTime90nsTAAAddressAccessTime90nsTPACCPageAccessTime25nsTOEOutputEnableAccessTime25nsTCLZ11.
Thisparameterismeasuredonlyforinitialqualificationandafteradesignorprocesschangethatcouldaffectthisparameter.
CE#LowtoActiveOutput0nsTOLZ1OE#LowtoActiveOutput0nsTCHZ1CE#HightoHigh-ZOutput20nsTOHZ1OE#HightoHigh-ZOutput20nsTOH1OutputHoldfromAddressChange0nsTRP1RST#PulseWidth500nsTRHR1RST#HighbeforeRead50nsTRYE1,22.
ThisparameterappliestoSector-Erase,Block-Erase,andProgramoperations.
ThisparameterdoesnotapplytoChip-Eraseoperations.
RST#PinLowtoReadMode20sTRY1RST#PinLowtoReadMode–notduringProgramorErasealgorithms.
500nsTRPD1RST#InputLowtoStandbymode20sTRB1RY/BY#OutputhightoCE#/OE#pinLow0nsT21.
01309PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF6404292009SiliconStorageTechnology,Inc.
S71309-04-0001/09TABLE22:Program/EraseCycleTimingParametersSymbolParameterMinMaxUnitsTBPWord-ProgramTime10sTWBP1ProgramBuffer-to-FlashTime40sTASAddressSetupTime0nsTAHAddressHoldTime30nsTCSWE#andCE#SetupTime0nsTCHWE#andCE#HoldTime0nsTOESOE#HighSetupTime0nsTOEHOE#HighHoldTime10nsTCPCE#PulseWidth40nsTWPWE#PulseWidth40nsTWPH2WE#PulseWidthHigh30nsTCPH2CE#PulseWidthHigh30nsTDSDataSetupTime30nsTDH2DataHoldTime0nsTIDA2SoftwareID,VolatileProtect,Non-VolatileProtect,GlobalLockBit,Pass-wordmode,LockBit,BypassEntry,andExitTimes150nsTSESector-Erase25msTBEBlock-Erase25msTSCEChip-Erase50msTBUSYCE#HighorWE#HightoRY/BY#Low90nsT22.
013091.
Effectiveprogrammingtimeis2.
5sperwordif16-wordsareprogrammedduringthisoperation.
2.
Thisparameterismeasuredonlyforinitialqualificationandafteradesignorprocesschangethatcouldaffectthisparameter.
30PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF64042009SiliconStorageTechnology,Inc.
S71309-04-0001/09FIGURE5:ReadCycleTimingDiagramFIGURE6:PageReadTimingDiagram1309F03.
1ADDRESSAMS-0DQ15-0WE#OE#CE#DATAVALIDDATAVALIDRY/BY#HIGH-ZVIHHIGH-ZTCHZTOHZTOLZTCLZTOHTOETCETRCTAATRBNote:AMS=MostsignificantaddressAMS=A21forSST38VF6401/6402/6403/6404ADDRESSAMS-2A1-A0DQ15-0CE#OE#AxAxAxDATAVALIDSamePageRY/BY#DATAVALIDDATAVALIDAxTAATPACCTPACCTPACC1309F24.
3DATAVALIDNote:AMS=MostsignificantaddressAMS=A21forSST38VF6401/6402/6403/6404AX=either00,01,10or11PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF6404312009SiliconStorageTechnology,Inc.
S71309-04-0001/09FIGURE7:WE#ControlledProgramCycleTimingDiagramFIGURE8:CE#ControlledProgramCycleTimingDiagramTDHTWPHTDSTWPTAHTASTCHTCSTBUSY1309F04.
1ADDRESSAMS-0DQ15-0CE#SW0SW1SW25552AA555ADDRXXAAXX55XXA0DATAINTERNALPROGRAMOPERATIONSTARTSWORD(ADDR/DATA)OE#WE#TBPRY/BY#Note:AMS=MostsignificantaddressAMS=A21forSST38VF6401/6402/6403/6404WP#mustbeheldinproperlogicstate(VILorVIH)1spriortoand1safterthecommandsequence.
XcanbeVILorVIH,butnoothervalue.
TDHTCPHTDSTCPTAHTASTCHTCSTBUSY1309F05.
1ADDRESSAMS-0DQ15-0WE#SW0SW1SW25552AA555ADDRXXAAXX55XXA0DATAINTERNALPROGRAMOPERATIONSTARTSWORD(ADDR/DATA)OE#CE#TBPRY/BY#Note:AMS=MostsignificantaddressAMS=A21forSST38VF6401/6402/6403/6404WP#mustbeheldinproperlogicstate(VILorVIH)1spriortoand1safterthecommandsequence.
XcanbeVILorVIH,butnoothervalue.
32PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF64042009SiliconStorageTechnology,Inc.
S71309-04-0001/09FIGURE9:WE#ControlledWrite-BufferCycleTimingDiagramFIGURE10:WE#ControlledProgram-Write-Buffer-to-FlashCycleTimingDiagram1309F34.
2ADDRESSAMS-0DQ15-0WE#SW0SW1SW2SW3SW4SWn5552AAWAXBABADATADATAnXX55XXAAXX25WCWAXOE#CE#RY/BY#FILLWRITEBUFFERWITHDATATWPNote:BA=BlockAddressWAx=WordAddressWC=WordCountDATAn=nthDataXcanbeVILorVIH,butnoothervalue.
1309F35.
1ADDRESSAMS-0DQ15-0WE#BA29HOE#CE#TBusyRY/BY#TDHTASTWBPTWPNote:BA=BlockAddressPreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF6404332009SiliconStorageTechnology,Inc.
S71309-04-0001/09FIGURE11:Data#PollingTimingDiagramFIGURE12:ToggleBitsTimingDiagram1309F06.
1ADDRESSAMS-0DQ7DATADATA#DATA#DATAWE#OE#CE#TOEHTOETCETOESNote:AMS=MostsignificantaddressAMS=A21forSST38VF6401/6402/6403/64041309F07.
0ADDRESSAMS-0DQ6andDQ2WE#OE#CE#TOETOEHTCETOESTWOREADCYCLESWITHSAMEOUTPUTSNote:AMS=MostsignificantaddressAMS=A21forSST38VF6401/6402/6403/640434PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF64042009SiliconStorageTechnology,Inc.
S71309-04-0001/09FIGURE13:WE#ControlledChip-EraseTimingDiagramFIGURE14:WE#ControlledBlock-EraseTimingDiagram1309F08.
1ADDRESSAMS-0DQ15-0WE#SW0SW1SW2SW3SW4SW55552AA2AA555555XX55XX10XX55XXAAXX80XXAA555OE#CE#RY/BY#TWPSIX-BYTECODEFORCHIP-ERASETSCETBUSYNote:ThisdevicealsosupportsCE#controlledChip-EraseoperationTheWE#andCE#signalsareinterchangeableaslongasminimumtimingsaremet.
(SeeTable22)AMS=MostsignificantaddressAMS=A21forSST38VF6401/6402/6403/6404WP#mustbeheldinproperlogicstate(VILorVIH)1spriortoand1safterthecommandsequence.
XcanbeVILorVIH,butnoothervalue.
1309F09.
1ADDRESSAMS-0DQ15-0WE#SW0SW1SW2SW3SW4SW55552AA2AA555555XX55XX30XX55XXAAXX80XXAABAXOE#CE#TBusyRY/BY#TBESIX-BYTECODEFORBLOCK-ERASETWPNote:ThisdevicealsosupportsCE#controlledBlock-EraseoperationTheWE#andCE#signalsareinterchangeableaslongasminimumtimingsaremet.
(SeeTable22)BAX=BlockAddressAMS=MostsignificantaddressAMS=A21forSST38VF6401/6402/6403/6404WP#mustbeheldinproperlogicstate(VILorVIH)1spriortoand1safterthecommandsequence.
XcanbeVILorVIH,butnoothervalue.
PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF6404352009SiliconStorageTechnology,Inc.
S71309-04-0001/09FIGURE15:WE#ControlledSector-EraseTimingDiagram1309F10.
1ADDRESSAMS-0DQ15-0WE#SW0SW1SW2SW3SW4SW55552AA2AA555555XX55XX50XX55XXAAXX80XXAASAXOE#CE#SIX-BYTECODEFORSECTOR-ERASETSERY/BY#TBUSYTWPNote:ThisdevicealsosupportsCE#controlledSector-EraseoperationTheWE#andCE#signalsareinterchangeableaslongasminimumtimingsaremet.
(SeeTable22)SAX=SectorAddressAMS=MostsignificantaddressAMS=A21forSST38VF6401/6402/6403/6404WP#mustbeheldinproperlogicstate(VILorVIH)1spriortoand1safterthecommandsequence.
XcanbeVILorVIH,butnoothervalue.
36PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF64042009SiliconStorageTechnology,Inc.
S71309-04-0001/09FIGURE16:SoftwareIDEntryandReadFIGURE17:CFIQueryEntryandRead1309F11.
0ADDRESSAMS-0TIDADQ15-0WE#SW0SW1SW25552AA55500000001OE#CE#Three-ByteSequenceforSoftwareIDEntryTWPTWPHTAA00BFDeviceIDXX55XXAAXX90Note:DeviceID=536BforSST38VF6401,536AforSST38VF6402,536DforSST38VF6403,536CforSST38VF6404AMS=MostsignificantaddressAMS=A21forSST38VF6401/6402/6403/6404WP#mustbeheldinproperlogicstate(VILorVIH)1spriortoand1safterthecommandsequence.
XcanbeVILorVIH,butnoothervalue.
1309F12.
2ADDRESSAMS-0TIDADQ15-0WE#55HOE#CE#TWPTAA98HNote:WP#mustbeheldinproperlogicstate(VILorVIH)1spriortoand1safterthecommandsequence.
AMS=MostsignificantaddressAMS=A21forSST38VF6401/6402/6403/6404XcanbeVILorVIH,butnoothervalue.
PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF6404372009SiliconStorageTechnology,Inc.
S71309-04-0001/09FIGURE18:SoftwareIDExit/CFIExitFIGURE19:SecIDEntry1309F13.
0ADDRESSAMS-0DQ15-0TIDATWPTWHPWE#SW0SW1SW25552AA555THREE-BYTESEQUENCEFORSOFTWAREIDEXITANDRESETOE#CE#XXAAXX55XXF0Note:WP#mustbeheldinproperlogicstate(VILorVIH)1spriortoand1safterthecommandsequence.
AMS=MostsignificantaddressAMS=A21forSST38VF6401/6402/6403/6404XcanbeVILorVIH,butnoothervalue.
1309F14.
1ADDRESSAMS-0TIDADQ15-0WE#SW0SW1SW25552AA555OE#CE#THREE-BYTESEQUENCEFORSECIDENTRYTWPTWPHTAAXX55XXAAXX88Note:AMS=MostsignificantaddressAMS=A21forSST38VF6401/6402/6403/6404WP#mustbeheldinproperlogicstate(VILorVIH)1spriortoand1safterthecommandsequence.
XcanbeVILorVIH,butnoothervalue.
38PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF64042009SiliconStorageTechnology,Inc.
S71309-04-0001/09FIGURE20:RST#TimingDiagram(Whennointernaloperationisinprogress)FIGURE21:RST#TimingDiagram(DuringProgramorEraseoperation)FIGURE22:ACInput/OutputReferenceWaveforms1309F15.
2RST#CE#/OE#TRPTRHRTRYRY/BY#1309F16.
2RST#CE#/OE#TRPTRYERY/BY#TRB1309F17.
0REFERENCEPOINTSOUTPUTINPUTVITVIHTVILTVOTACtestinputsaredrivenatVIHT(0.
9VDD)foralogic"1"andVILT(0.
1VDD)foralogic"0".
MeasurementreferencepointsforinputsandoutputsareVIT(0.
5VDD)andVOT(0.
5VDD).
Inputriseandfalltimes(10%90%)areXXXHWaitTIDAReturntonormaloperationReturntonormaloperationNote:XcanbeVILorVIH,butnoothervalue.
PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF6404452009SiliconStorageTechnology,Inc.
S71309-04-0001/09FIGURE29:EraseCommandSequence1309F23.
0Loaddata:XXAAHAddress:555HChip-EraseCommandSequenceLoaddata:XX55HAddress:2AAHLoaddata:XX80HAddress:555HLoaddata:XX55HAddress:2AAHLoaddata:XX10HAddress:555HLoaddata:XXAAHAddress:555HWaitTSCEChiperasedtoFFFFHLoaddata:XXAAHAddress:555HSector-EraseCommandSequenceLoaddata:XX55HAddress:2AAHLoaddata:XX80HAddress:555HLoaddata:XX55HAddress:2AAHLoaddata:XX50HAddress:SAXLoaddata:XXAAHAddress:555HWaitTSESectorerasedtoFFFFHLoaddata:XXAAHAddress:555HBlock-EraseCommandSequenceLoaddata:XX55HAddress:2AAHLoaddata:XX80HAddress:555HLoaddata:XX55HAddress:2AAHLoaddata:XX30HAddress:BAXLoaddata:XXAAHAddress:555HWaitTBEBlockerasedtoFFFFHNote:XcanbeVILorVIH,butnoothervalue.
BA=BlockAddressSA=SectorAddress46PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF64042009SiliconStorageTechnology,Inc.
S71309-04-0001/09FIGURE30:EraseSuspend/Resume1309F27.
0StartEraseOperationLoaddata:XXB0HAddress:XXXHWaitTime(20smax)EraseSuspendActiveExecutevalidoperationswhileinEraseSuspendmodeLoaddata:XX30HAddress:XXXHResumeEraseOperationNote:XcanbeVILorVIH,butnoothervalue.
PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF6404472009SiliconStorageTechnology,Inc.
S71309-04-0001/09FIGURE31:VolatileBlockProtection1309F28.
3Loaddata:XXAAHAddress:555HLoaddata:XX55HAddress:2AAHLoaddata:XXE0HAddress:555HWaitTIDALoaddata:XXA0HAddress:555HLoaddata:DataAddress:BALoaddata:XX90HAddress:XXXHLoaddata:XX00HAddress:XXXHReaddata:DataAddress:BAMoreBlockstoprotect/unprotectorReadstatusYesNoReadProtectStatusProtect/UnprotectNote:Data=00H(unprotect);Data=01H(protect).
BA=BlockAddressXcanbeVILorVIH,butnoothervalue.
48PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF64042009SiliconStorageTechnology,Inc.
S71309-04-0001/09FIGURE32:Non-VolatileBlockProtectModeProgram(ProtectBlock)Loaddata:XXAAHAddress:555HLoaddata:XX55HAddress:2AAHLoaddata:XXC0HAddress:555HWaitTIDALoaddata:XX80HAddress:XXHReaddata:DataAddress:BALoaddata:XXA0HAddress:XXHLoaddata:XX30HAddress:00HWaitforendofProgram,Erase,orReadLoaddata:XX90HAddress:XXHLoaddata:XX00HAddress:XXHLoaddata:XX00HAddress:BAMoretoProgram,Erase,orReadEraseReadProtectStatusYesNo1309F30.
1Program,EraseorReadNote:Data=00H(unprotect);Data=01H(protect).
XcanbeVILorVIH,butnoothervalue.
ProgrammingNVPBrequires2xTBP,whichresultsina20smaximumprogrammingtimePreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF6404492009SiliconStorageTechnology,Inc.
S71309-04-0001/09FIGURE33:GlobalLockofNVPBsSetLoaddata:XXAAHAddress:555HLoaddata:XX55HAddress:2AAHLoaddata:XX50HAddress:555HWaitTIDAReaddata:StatusDataAddress:XXXHLoaddata:XXA0HAddress:XXHLoaddata:XX90HAddress:XXHLoaddata:XX00HAddress:XXHLoaddata:XX00HAddress:XXHReadStatus1309F31.
0Note:StatusData:DQ0=0(locked);DQ0=1(unlocked).
XcanbeVILorVIH,butnoothervalue.
50PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF64042009SiliconStorageTechnology,Inc.
S71309-04-0001/09FIGURE34:PasswordOperations(Program,Read,Submit)ProgramLoaddata:XXAAHAddress:555HLoaddata:XX55HAddress:2AAHLoaddata:XX60HAddress:555HWaitTIDAReaddata:StatusDataAddress:PWAXLoaddata:XXA0HAddress:XXHLoaddata:XX90HAddress:XXHLoaddata:XX00HAddress:XXHLoaddata:PWDXAddress:PWAXRead1309F32.
0MoretoProgramorReadYesNoLoaddata:XXAAHAddress:555HLoaddata:XX55HAddress:2AAHLoaddata:XX60HAddress:555HLoaddata:XX25HAddress:00HLoaddata:XX03HAddress:00HLoaddata:PWD0Address:PWA0Loaddata:XX29HAddress:00HWait2sWaitTIDALoaddata:PWD1Address:PWA1Loaddata:PWD2Address:PWA2Loaddata:PWD3Address:PWA3Loaddata:XX90HAddress:XXHLoaddata:XX00HAddress:XXHExitPasswordCommandModeSubmitPasswordProgram/ReadPasswordNote:ThePWDXandPWAXdataandaddresspairscanbesubmittedinanyorder.
PWDX=PWD0,PWD1,PWD2,PWD3PWAX=PWA0,PWA1,PWA2,PWA3XcanbeVILorVIH,butnoothervalue.
PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF6404512009SiliconStorageTechnology,Inc.
S71309-04-0001/09FIGURE35:IrreversibleBlockLockinMainArrayLoaddata:AAHAddress:555HLoaddata:55HAddress:2AAHLoaddata:87HAddress:555HLoaddata:00HAddress:XXH1309F33.
0Note:GlobalLockBitmustbe'1'beforeexecutingthiscommand.
XcanbeVILorVIH,butnoothervalue.
52PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF64042009SiliconStorageTechnology,Inc.
S71309-04-0001/09PRODUCTORDERINGINFORMATIONEnvironmentalAttributeE1=non-PbPackageModifierK=48ballsorleadsPackageTypeE=TSOP(type1,dieup,12mmx20mm)B3=TFBGA(6mmx8mm,0.
8mmpitch)TemperatureRangeC=Commercial=0°Cto+70°CI=Industrial=-40°Cto+85°CMinimumEndurance4=10,000cycles5=100,000cyclesReadAccessSpeed90=90nsHardwareBlockProtection1=BottomBoot-BlockUniform(32Kword)2=TopBoot-BlockUniform(32Kword)3=BottomBoot-BlockNon-Uniform(8Kword)4=TopBoot-BlockNon-Uniform(8Kword)DeviceDensity640=64MbitVoltageV=2.
7-3.
6VProductSeries38=AdvancedMulti-PurposeFlashPlus1.
Environmentalsuffix"E"denotesnon-Pbsolder.
SSTnon-Pbsolderdevicesare"RoHSCompliant".
SST38VF6401-90-5C-EKEXXXXXXXX-XX-XX-XXXXPreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF6404532009SiliconStorageTechnology,Inc.
S71309-04-0001/09ValidCombinationsValidCombinationsforSST38VF6401ValidCombinationsforSST38VF6402ValidCombinationsforSST38VF6403ValidCombinationsforSST38VF6404Note:Validcombinationsarethoseproductsinmassproductionorwillbeinmassproduction.
ConsultyourSSTsalesrepresentativetoconfirmavailabilityofvalidcombinationsandtodetermineavailabilityofnewcombinations.
SST38VF6401-90-4C-EKESST38VF6401-90-4C-B3KESST38VF6401-90-5C-EKESST38VF6401-90-5C-B3KESST38VF6401-90-4I-EKESST38VF6401-90-4I-B3KESST38VF6401-90-5I-EKESST38VF6401-90-5I-B3KESST38VF6402-90-4C-EKESST38VF6402-90-4C-B3KESST38VF6402-90-5C-EKESST38VF6402-90-5C-B3KESST38VF6402-90-4I-EKESST38VF6402-90-4I-B3KESST38VF6402-90-5I-EKESST38VF6402-90-5I-B3KESST38VF6403-90-4C-EKESST38VF6403-90-4C-B3KESST38VF6403-90-5C-EKESST38VF6403-90-5C-B3KESST38VF6403-90-4I-EKESST38VF6403-90-4I-B3KESST38VF6403-90-5I-EKESST38VF6403-90-5I-B3KESST38VF6404-90-4C-EKESST38VF6404-90-4C-B3KESST38VF6404-90-5C-EKESST38VF6404-90-5C-B3KESST38VF6404-90-4I-EKESST38VF6404-90-4I-B3KESST38VF6404-90-5I-EKESST38VF6404-90-5I-B3KE54PreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF64042009SiliconStorageTechnology,Inc.
S71309-04-0001/09PACKAGINGDIAGRAMSFIGURE36:48-leadThinSmallOutlinePackage(TSOP)12mmx20mmSSTPackageCode:EKE1.
050.
950.
700.
5018.
5018.
3020.
2019.
800.
700.
5012.
2011.
800.
270.
170.
150.
0548-tsop-EK-8Note:1.
ComplieswithJEDECpublication95MO-142DDdimensions,althoughsomedimensionsmaybemorestringent.
2.
Alllineardimensionsareinmillimeters(max/min).
3.
Coplanarity:0.
1mm4.
Maximumallowablemoldflashis0.
15mmatthepackageends,and0.
25mmbetweenleads.
1.
20max.
1mm0-5DETAILPin#1Identifier0.
50BSCPreliminarySpecification64Mbit(x16)AdvancedMulti-PurposeFlashPlusSST38VF6401/SST38VF6402/SST38VF6403/SST38VF6404552009SiliconStorageTechnology,Inc.
S71309-04-0001/09FIGURE37:48-ballThin-profile,Fine-pitchBallGridArray(TFBGA)6mmx8mmSSTPackageCode:B3KETABLE23:RevisionHistoryNumberDescriptionDate00InitialreleaseMar200701RemovedProgramSuspend/Resumeonpage3Updated"Erase-Suspend/Erase-ResumeCommands"onpage4Updated"Non-VolatileBlockProtection"onpage8Updated"PasswordMode(DQ2,DQ1=0,1)"onpage9Updated"Power-UpSpecifications"onpage26AddedanotetoFigure32onpage48Updated"ValidCombinations"onpage53Sep200702ModifiedFeaturesandProductDescriptiononpage1Dec200703RevisedendurancestatementinFeatures,ProductDescriptionandfootnoteofTable20Updated"ValidCombinations"onpage53Changeddocumentstatusto"PreliminarySpecification"Aug200804Changed1Vper100sto1Vper100msinPowerUpSpecificationonpage26Jan2009A1CORNERHGFEDCBAABCDEFGHBOTTOMVIEWTOPVIEWSIDEVIEW654321654321SEATINGPLANE0.
35±0.
051.
10±0.
100.
126.
00±0.
200.
45±0.
05(48X)A1CORNER8.
00±0.
200.
804.
000.
805.
6048-tfbga-B3K-6x8-450mic-4Note:1.
ComplieswithJEDECPublication95,MO-210,variant'AB-1',althoughsomedimensionsmaybemorestringent.
2.
Alllineardimensionsareinmillimeters.
3.
Coplanarity:0.
12mm4.
Ballopeningsizeis0.
38mm(±0.
05mm)1mmSiliconStorageTechnology,Inc.
1171SonoraCourtSunnyvale,CA94086Telephone408-735-9110Fax408-735-9036www.
SuperFlash.
comorwww.
sst.
com