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CSD16415Q5www.
ti.
com.
cnZHCS630–DECEMBER2011N通道NexFET功率金属氧化物半导体场效应晶体管(MOSFET)查询样品:CSD16415Q51特性产品概述2超低栅极电荷(Qg)和栅漏电荷(Qgd)VDS漏源极电压25V极低接通电阻Qg栅极电荷,总数(4.
5V)21nC低热阻性Qgd栅极电荷,栅漏5.
2nCVGS=4.
5V1.
5mΩ额定雪崩能量rDS(接通)漏源极接通电阻VGS=10V0.
99mΩ无铅端子电镀VGS(th)阀值电压1.
5V符合RoHS标准无卤素订购信息器件封装介质数量出货应用范围无引线小外形尺13英CSD16415Q5寸(SON)5mmx寸(33cm)卷2500卷带负载点同步降压转换器用于网络,电信和计算系统6mm塑料封装带为同步场效应晶体管(FET)应用进行了优化最大绝对额定值说明除非另外说明,否则TA=25°C数值单位此NexFET功率MOSFET已被设计成在功率转换应VDS漏源极电压25VVGS栅源极电压+16/-12V用中大大降低功率损失.
持续漏极电流,TC=25°C100AID顶视图持续漏极电流(1)38AIDM脉冲漏极电流,TA=25°C(2)200APD功率耗散(1)3.
2WTJ,运行结温和存储温度范围–55至150°CTSTG雪崩能量,单一脉冲EAS500mJID=100A,L=0.
1mH,RG=25Ω(1)RθJA=40°C/W,此条件是在1in2(6.
45cm2)Cu[2oz.
(厚度为0.
071mm)]的0.
060英寸厚度为(1.
52mm)FR4印刷电路板(PCB)上.
(2)脉冲持续时间≤300μs,占空比≤2%rDS(ON)对VGS栅极电荷1Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
2NexFETisatrademarkofTexasInstruments.
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
Copyright2011,TexasInstrumentsIncorporatedProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.
ProductionprocessingdoesnotEnglishDataSheet:SLPS259necessarilyincludetestingofallparameters.
CSD16415Q5ZHCS630–DECEMBER2011www.
ti.
com.
cnThesedeviceshavelimitedbuilt-inESDprotection.
TheleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoamduringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.
ELECTRICALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERTESTCONDITIONSMINTYPMAXUNITStaticCharacteristicsBVDSSDrain-to-sourcevoltageVGS=0V,ID=250μA25VIDSSDrain-to-sourceleakagecurrentVGS=0V,VDS=20V1μAIGSSGate-to-sourceleakagecurrentVDS=0V,VGS=–12Vto16V100nAVGS(th)Gate-to-sourcethresholdvoltageVDS=VGS,ID=250μA1.
21.
51.
9VVGS=4.
5V,ID=40A1.
51.
8mrDS(on)Drain-to-sourceon-resistanceVGS=10V,ID=40A0.
991.
15mgfsTransconductanceVDS=15V,ID=40A168SDynamicCharacteristicsCISSInputcapacitance31504100pFCOSSOutputcapacitanceVGS=0V,VDS=12.
5V,f=1MHz25303300pFCRSSReversetransfercapacitance175230pFRgSeriesgateresistance1.
22.
4QgGatechargetotal(4.
5V)2129nCQgdGatecharge,gate-to-drain5.
2nCVDS=12.
5V,ID=40AQgsGatecharge,gate-to-source8.
3nCQg(th)GatechargeatVth4.
8nCQOSSOutputchargeVDS=15V,VGS=0V55nCtd(on)Turnondelaytime16.
6nstrRisetime30nsVDS=12.
5V,VGS=4.
5V,ID=40ARG=2td(off)Turnoffdelaytime20nstfFalltime12.
7nsDiodeCharacteristicsVSDDiodeforwardvoltageIS=40A,VGS=0V0.
851VQrrReverserecoverychargeVDD=15V,IF=40A,di/dt=300A/μs72nCtrrReverserecoverytimeVDD=15V,IF=40A,di/dt=300A/μs45nsTHERMALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERMINTYPMAXUNITRθJCThermalresistance,junction-to-case(1)1.
1°C/WRθJAThermalresistance,junction-to-ambient(1)(2)50°C/W(1)RθJCisdeterminedwiththedevicemountedona1-inch(2.
54-cm)square,2-oz.
(0.
071-mmthick)Cupadona1.
5-inch*1.
5-inch(3.
81-cm*3.
81-cm),0.
060-inch(1.
52-mm)thickFR4board.
RθJCisspecifiedbydesign,whereasRθJAisdeterminedbytheuser'sboarddesign.
(2)DevicemountedonFR4materialwith1inch2(6.
45cm2)of2-oz.
(0.
071-mmthick)Cu.
2Copyright2011,TexasInstrumentsIncorporatedCSD16415Q5www.
ti.
com.
cnZHCS630–DECEMBER2011MaxRθJA=50°C/WMaxRθJA=121°C/Wwhenmountedon1whenmountedoninch2(6.
45cm2)ofminimumpadareaof2-oz.
(0.
071-mmthick)2-oz.
(0.
071-mmthick)Cu.
Cu.
TextandbrAddedforSpacingTextandbrAddedforSpacingTextandbrAddedforSpacingTextandbrAddedforSpacingTextandbrAddedforSpacingTYPICALMOSFETCHARACTERISTICS(TA=25°Cunlessotherwisestated)Figure1.
TransientThermalImpedanceCopyright2011,TexasInstrumentsIncorporated3CSD16415Q5ZHCS630–DECEMBER2011www.
ti.
com.
cnTYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure2.
SaturationCharacteristicsFigure3.
TransferCharacteristicsTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure4.
GateChargeFigure5.
CapacitanceTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure6.
ThresholdVoltagevs.
TemperatureFigure7.
On-Resistancevs.
GateVoltage4Copyright2011,TexasInstrumentsIncorporatedCSD16415Q5www.
ti.
com.
cnZHCS630–DECEMBER2011TYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure8.
On-Resistancevs.
TemperatureFigure9.
TypicalDiodeForwardVoltageTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure10.
MaximumSafeOperatingAreaFigure11.
Single-PulseUnclampedInductiveSwitchingTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure12.
MaximumDrainCurrentvs.
TemperatureCopyright2011,TexasInstrumentsIncorporated5CSD16415Q5ZHCS630–DECEMBER2011www.
ti.
com.
cnMECHANICALDATAQ5PackageDimensionsMILLIMETERSINCHESDIMMINMAXMINMAXA0.
9501.
0500.
0370.
039b0.
3600.
4600.
0140.
018c0.
1500.
2500.
0060.
010c10.
1500.
2500.
0060.
010D14.
9005.
1000.
1930.
201D24.
3204.
5200.
1700.
178E4.
9005.
1000.
1930.
201E15.
9006.
1000.
2320.
240E23.
9204.
120.
1540.
162e1.
27TYP0.
050K0.
7600.
030L0.
5100.
7100.
0200.
028θ0.
006Copyright2011,TexasInstrumentsIncorporatedCSD16415Q5www.
ti.
com.
cnZHCS630–DECEMBER2011MILLIMETERSINCHESDIMFigure13.
RecommendedPCBPatternMINMAXMINMAXF16.
2056.
3050.
2440.
248F24.
4604.
5600.
1760.
180F34.
4604.
5600.
1760.
180F40.
6500.
7000.
0260.
028F50.
6200.
6700.
0240.
026F60.
6300.
6800.
0250.
027F70.
7000.
8000.
0280.
031F80.
6500.
7000.
0260.
028F90.
6200.
6700.
0240.
026F104.
9005.
0000.
1930.
197F114.
4604.
5600.
1760.
180ForrecommendedcircuitlayoutforPCBdesigns,seeapplicationnoteSLPA005–ReducingRingingThroughPCBLayoutTechniques.
Q5TapeandReelInformationNotes:1.
10sprocketholepitchcumulativetolerance±0.
22.
Cambernottoexceed1mmIN100mm,noncumulativeover250mm3.
Material:blackstaticdissipativepolystyrene4.
Alldimensionsareinmm(unlessotherwisespecified)5.
A0andB0measuredonaplane0.
3mmabovethebottomofthepocket6.
MSL1260°C(IRandConvection)PbFReflowCompatibleCopyright2011,TexasInstrumentsIncorporated7PACKAGEOPTIONADDENDUMwww.
ti.
com10-Dec-2020Addendum-Page1PACKAGINGINFORMATIONOrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Leadfinish/Ballmaterial(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)SamplesCSD16415Q5ACTIVEVSON-CLIPDQH82500RoHS-Exempt&GreenSNLevel-1-260C-UNLIM-55to150CSD16415CSD16415Q5TACTIVEVSON-CLIPDQH8250RoHS-Exempt&GreenSNLevel-1-260C-UNLIM-55to150CSD16415(1)Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.
Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.
Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)RoHS:TIdefines"RoHS"tomeansemiconductorproductsthatarecompliantwiththecurrentEURoHSrequirementsforall10RoHSsubstances,includingtherequirementthatRoHSsubstancedonotexceed0.
1%byweightinhomogeneousmaterials.
Wheredesignedtobesolderedathightemperatures,"RoHS"productsaresuitableforuseinspecifiedlead-freeprocesses.
TImayreferencethesetypesofproductsas"Pb-Free".
RoHSExempt:TIdefines"RoHSExempt"tomeanproductsthatcontainleadbutarecompliantwithEURoHSpursuanttoaspecificEURoHSexemption.
Green:TIdefines"Green"tomeanthecontentofChlorine(Cl)andBromine(Br)basedflameretardantsmeetJS709Blowhalogenrequirementsof.
com.
cn/zh-cn/legal/termsofsale.
html)以及ti.
com.
cn上或随附TI产品提供的其他可适用条款的约束.
TI提供所述资源并不扩展或以其他方式更改TI针对TI产品所发布的可适用的担保范围或担保免责声明.
IMPORTANTNOTICE邮寄地址:上海市浦东新区世纪大道1568号中建大厦32楼,邮政编码:200122Copyright2020德州仪器半导体技术(上海)有限公司
ti.
com.
cnZHCS630–DECEMBER2011N通道NexFET功率金属氧化物半导体场效应晶体管(MOSFET)查询样品:CSD16415Q51特性产品概述2超低栅极电荷(Qg)和栅漏电荷(Qgd)VDS漏源极电压25V极低接通电阻Qg栅极电荷,总数(4.
5V)21nC低热阻性Qgd栅极电荷,栅漏5.
2nCVGS=4.
5V1.
5mΩ额定雪崩能量rDS(接通)漏源极接通电阻VGS=10V0.
99mΩ无铅端子电镀VGS(th)阀值电压1.
5V符合RoHS标准无卤素订购信息器件封装介质数量出货应用范围无引线小外形尺13英CSD16415Q5寸(SON)5mmx寸(33cm)卷2500卷带负载点同步降压转换器用于网络,电信和计算系统6mm塑料封装带为同步场效应晶体管(FET)应用进行了优化最大绝对额定值说明除非另外说明,否则TA=25°C数值单位此NexFET功率MOSFET已被设计成在功率转换应VDS漏源极电压25VVGS栅源极电压+16/-12V用中大大降低功率损失.
持续漏极电流,TC=25°C100AID顶视图持续漏极电流(1)38AIDM脉冲漏极电流,TA=25°C(2)200APD功率耗散(1)3.
2WTJ,运行结温和存储温度范围–55至150°CTSTG雪崩能量,单一脉冲EAS500mJID=100A,L=0.
1mH,RG=25Ω(1)RθJA=40°C/W,此条件是在1in2(6.
45cm2)Cu[2oz.
(厚度为0.
071mm)]的0.
060英寸厚度为(1.
52mm)FR4印刷电路板(PCB)上.
(2)脉冲持续时间≤300μs,占空比≤2%rDS(ON)对VGS栅极电荷1Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
2NexFETisatrademarkofTexasInstruments.
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
Copyright2011,TexasInstrumentsIncorporatedProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.
ProductionprocessingdoesnotEnglishDataSheet:SLPS259necessarilyincludetestingofallparameters.
CSD16415Q5ZHCS630–DECEMBER2011www.
ti.
com.
cnThesedeviceshavelimitedbuilt-inESDprotection.
TheleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoamduringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.
ELECTRICALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERTESTCONDITIONSMINTYPMAXUNITStaticCharacteristicsBVDSSDrain-to-sourcevoltageVGS=0V,ID=250μA25VIDSSDrain-to-sourceleakagecurrentVGS=0V,VDS=20V1μAIGSSGate-to-sourceleakagecurrentVDS=0V,VGS=–12Vto16V100nAVGS(th)Gate-to-sourcethresholdvoltageVDS=VGS,ID=250μA1.
21.
51.
9VVGS=4.
5V,ID=40A1.
51.
8mrDS(on)Drain-to-sourceon-resistanceVGS=10V,ID=40A0.
991.
15mgfsTransconductanceVDS=15V,ID=40A168SDynamicCharacteristicsCISSInputcapacitance31504100pFCOSSOutputcapacitanceVGS=0V,VDS=12.
5V,f=1MHz25303300pFCRSSReversetransfercapacitance175230pFRgSeriesgateresistance1.
22.
4QgGatechargetotal(4.
5V)2129nCQgdGatecharge,gate-to-drain5.
2nCVDS=12.
5V,ID=40AQgsGatecharge,gate-to-source8.
3nCQg(th)GatechargeatVth4.
8nCQOSSOutputchargeVDS=15V,VGS=0V55nCtd(on)Turnondelaytime16.
6nstrRisetime30nsVDS=12.
5V,VGS=4.
5V,ID=40ARG=2td(off)Turnoffdelaytime20nstfFalltime12.
7nsDiodeCharacteristicsVSDDiodeforwardvoltageIS=40A,VGS=0V0.
851VQrrReverserecoverychargeVDD=15V,IF=40A,di/dt=300A/μs72nCtrrReverserecoverytimeVDD=15V,IF=40A,di/dt=300A/μs45nsTHERMALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERMINTYPMAXUNITRθJCThermalresistance,junction-to-case(1)1.
1°C/WRθJAThermalresistance,junction-to-ambient(1)(2)50°C/W(1)RθJCisdeterminedwiththedevicemountedona1-inch(2.
54-cm)square,2-oz.
(0.
071-mmthick)Cupadona1.
5-inch*1.
5-inch(3.
81-cm*3.
81-cm),0.
060-inch(1.
52-mm)thickFR4board.
RθJCisspecifiedbydesign,whereasRθJAisdeterminedbytheuser'sboarddesign.
(2)DevicemountedonFR4materialwith1inch2(6.
45cm2)of2-oz.
(0.
071-mmthick)Cu.
2Copyright2011,TexasInstrumentsIncorporatedCSD16415Q5www.
ti.
com.
cnZHCS630–DECEMBER2011MaxRθJA=50°C/WMaxRθJA=121°C/Wwhenmountedon1whenmountedoninch2(6.
45cm2)ofminimumpadareaof2-oz.
(0.
071-mmthick)2-oz.
(0.
071-mmthick)Cu.
Cu.
TextandbrAddedforSpacingTextandbrAddedforSpacingTextandbrAddedforSpacingTextandbrAddedforSpacingTextandbrAddedforSpacingTYPICALMOSFETCHARACTERISTICS(TA=25°Cunlessotherwisestated)Figure1.
TransientThermalImpedanceCopyright2011,TexasInstrumentsIncorporated3CSD16415Q5ZHCS630–DECEMBER2011www.
ti.
com.
cnTYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure2.
SaturationCharacteristicsFigure3.
TransferCharacteristicsTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure4.
GateChargeFigure5.
CapacitanceTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure6.
ThresholdVoltagevs.
TemperatureFigure7.
On-Resistancevs.
GateVoltage4Copyright2011,TexasInstrumentsIncorporatedCSD16415Q5www.
ti.
com.
cnZHCS630–DECEMBER2011TYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure8.
On-Resistancevs.
TemperatureFigure9.
TypicalDiodeForwardVoltageTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure10.
MaximumSafeOperatingAreaFigure11.
Single-PulseUnclampedInductiveSwitchingTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure12.
MaximumDrainCurrentvs.
TemperatureCopyright2011,TexasInstrumentsIncorporated5CSD16415Q5ZHCS630–DECEMBER2011www.
ti.
com.
cnMECHANICALDATAQ5PackageDimensionsMILLIMETERSINCHESDIMMINMAXMINMAXA0.
9501.
0500.
0370.
039b0.
3600.
4600.
0140.
018c0.
1500.
2500.
0060.
010c10.
1500.
2500.
0060.
010D14.
9005.
1000.
1930.
201D24.
3204.
5200.
1700.
178E4.
9005.
1000.
1930.
201E15.
9006.
1000.
2320.
240E23.
9204.
120.
1540.
162e1.
27TYP0.
050K0.
7600.
030L0.
5100.
7100.
0200.
028θ0.
006Copyright2011,TexasInstrumentsIncorporatedCSD16415Q5www.
ti.
com.
cnZHCS630–DECEMBER2011MILLIMETERSINCHESDIMFigure13.
RecommendedPCBPatternMINMAXMINMAXF16.
2056.
3050.
2440.
248F24.
4604.
5600.
1760.
180F34.
4604.
5600.
1760.
180F40.
6500.
7000.
0260.
028F50.
6200.
6700.
0240.
026F60.
6300.
6800.
0250.
027F70.
7000.
8000.
0280.
031F80.
6500.
7000.
0260.
028F90.
6200.
6700.
0240.
026F104.
9005.
0000.
1930.
197F114.
4604.
5600.
1760.
180ForrecommendedcircuitlayoutforPCBdesigns,seeapplicationnoteSLPA005–ReducingRingingThroughPCBLayoutTechniques.
Q5TapeandReelInformationNotes:1.
10sprocketholepitchcumulativetolerance±0.
22.
Cambernottoexceed1mmIN100mm,noncumulativeover250mm3.
Material:blackstaticdissipativepolystyrene4.
Alldimensionsareinmm(unlessotherwisespecified)5.
A0andB0measuredonaplane0.
3mmabovethebottomofthepocket6.
MSL1260°C(IRandConvection)PbFReflowCompatibleCopyright2011,TexasInstrumentsIncorporated7PACKAGEOPTIONADDENDUMwww.
ti.
com10-Dec-2020Addendum-Page1PACKAGINGINFORMATIONOrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Leadfinish/Ballmaterial(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)SamplesCSD16415Q5ACTIVEVSON-CLIPDQH82500RoHS-Exempt&GreenSNLevel-1-260C-UNLIM-55to150CSD16415CSD16415Q5TACTIVEVSON-CLIPDQH8250RoHS-Exempt&GreenSNLevel-1-260C-UNLIM-55to150CSD16415(1)Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.
Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.
Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)RoHS:TIdefines"RoHS"tomeansemiconductorproductsthatarecompliantwiththecurrentEURoHSrequirementsforall10RoHSsubstances,includingtherequirementthatRoHSsubstancedonotexceed0.
1%byweightinhomogeneousmaterials.
Wheredesignedtobesolderedathightemperatures,"RoHS"productsaresuitableforuseinspecifiedlead-freeprocesses.
TImayreferencethesetypesofproductsas"Pb-Free".
RoHSExempt:TIdefines"RoHSExempt"tomeanproductsthatcontainleadbutarecompliantwithEURoHSpursuanttoaspecificEURoHSexemption.
Green:TIdefines"Green"tomeanthecontentofChlorine(Cl)andBromine(Br)basedflameretardantsmeetJS709Blowhalogenrequirementsof.
com.
cn/zh-cn/legal/termsofsale.
html)以及ti.
com.
cn上或随附TI产品提供的其他可适用条款的约束.
TI提供所述资源并不扩展或以其他方式更改TI针对TI产品所发布的可适用的担保范围或担保免责声明.
IMPORTANTNOTICE邮寄地址:上海市浦东新区世纪大道1568号中建大厦32楼,邮政编码:200122Copyright2020德州仪器半导体技术(上海)有限公司
RAKsmart秒杀服务器$30/月,洛杉矶/圣何塞/香港/日本站群特价
RAKsmart发布了9月份优惠促销活动，从9月1日~9月30日期间，爆款美国服务器每日限量抢购最低$30.62-$46/月起，洛杉矶/圣何塞/香港/日本站群大量补货特价销售，美国1-10Gbps大带宽不限流量服务器低价热卖等。RAKsmart是一家华人运营的国外主机商，提供的产品包括独立服务器租用和VPS等，可选数据中心包括美国加州圣何塞、洛杉矶、中国香港、韩国、日本、荷兰等国家和地区数据中心(...
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