栅极.com.cn
.com.cn 时间:2021-05-25 阅读:(
)
CSD25402Q3Awww.
ti.
com.
cnZHCSBY6–DECEMBER201320VP通通道道NexFET功功率率金金属属氧氧化化物物半半导导体体场场效效应应晶晶体体管管(MOSFET)查查询询样样片片:CSD25402Q3A1特特性性产产品品概概述述2超超低低Qg和和QgdVDS漏源极电压-20V低低热热阻阻Qg栅极电荷总量(-4.
5V)7.
5nC低低RDS(on)Qgd栅极电荷漏极1.
1nCVGS=-1.
8V74mΩ无无铅铅且且无无卤卤素素RDS(on)漏源导通电阻VGS=-2.
5V13.
3mΩ符符合合RoHS环环保保标标准准VGS=-4.
5V7.
7mΩ小小外外形形尺尺寸寸无无引引线线(SON)3.
3mm*3.
3mm塑塑料料封封Vth阀值电压-0.
9V装装订订购购信信息息应应用用范范围围器器件件封封装装介介质质数数量量出出货货直直流流-直直流流转转换换器器SON3*3塑料封13英寸卷CSD25402Q3A2500卷带封装装带电电池池管管理理负负载载开开关关绝绝对对最最大大额额定定值值电电池池保保护护TA=25°C值值单单位位VDS漏源电压-20V说说明明VGS栅源电压+12或-12V这款-20V,7.
7mΩNexFET功率MOSFET被设计持续漏极电流,TC=25°C时测得-72A成最大限度地减少SON3*3封装内的功率转换负载ID持续漏极电流(受封装限制)-35A管理应用中的损耗,此封装类型针对器件的尺寸提供出持续漏极电流(1)-15AIDM脉冲漏极电流(2)-82A色的热性能.
PD功率耗散(1)2.
8W顶顶视视图图TJ,运行结温和储存温度范围-55至150°CTSTG(1)RθJA=55°C/W,这是在厚度为0.
060"的环氧树脂(FR4)印刷电路板(PCB)上的1英寸2铜过渡垫片(2盎司)上测得的典型值.
(2)脉宽≤300μs,占空比≤2%RDS(on)与与VGS间间的的关关系系栅栅极极电电荷荷1Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
2NexFETisatrademarkofTexasInstruments.
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
版权2013,TexasInstrumentsIncorporatedProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.
ProductionprocessingdoesnotEnglishDataSheet:SLPS454necessarilyincludetestingofallparameters.
CSD25402Q3AZHCSBY6–DECEMBER2013www.
ti.
com.
cnELECTRICALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERTESTCONDITIONSMINTYPMAXUNITStaticCharacteristicsBVDSSDrain-to-SourceVoltageVGS=0V,ID=–250μA–20VIDSSDrain-to-SourceLeakageCurrentVGS=0V,VDS=–16V–1μAIGSSGate-to-SourceLeakageCurrentVDS=0V,VGS=±12V–100nAVGS(th)Gate-to-SourceThresholdVoltageVDS=VGS,ID=–250μA–0.
65–0.
90–1.
15VVGS=–1.
8V,ID=–1A74300mRDS(on)Drain-to-SourceOnResistanceVGS=–2.
5V,ID=–10A13.
315.
9mVGS=–4.
5V,ID=–10A7.
78.
9mgfsTransconductanceVDS=–10V,ID=–10A59SDynamicCharacteristicsCISSInputCapacitance13801790pFVGS=0V,VDS=–10V,COSSOutputCapacitance763992pFf=1MHzCRSSReverseTransferCapacitance3951pFRGSeriesGateResistance3.
77.
4QgGateChargeTotal(4.
5V)7.
59.
7nCQgdGateChargeGatetoDrain1.
1nCVDS=–10V,ID=–10AQgsGateChargeGatetoSource2.
4nCQg(th)GateChargeatVth1.
0nCQOSSOutputChargeVDS=–10V,VGS=0V7.
6nCtd(on)TurnOnDelayTime10nstrRiseTime7nsVDS=–10V,VGS=–4.
5V,ID=–10A,RG=5td(off)TurnOffDelayTime25nstfFallTime12nsDiodeCharacteristicsVSDDiodeForwardVoltageIS=–10A,VGS=0V–0.
8–1VQrrReverseRecoveryCharge10.
3nCVDS=–8.
5V,IF=–10A,di/dt=200A/μstrrReverseRecoveryTime21nsTHERMALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERMINTYPMAXUNITRθJCThermalResistanceJunctiontoCase(1)2.
3°C/WRθJAThermalResistanceJunctiontoAmbient(1)(2)55°C/W(1)RθJCisdeterminedwiththedevicemountedona1-inch2(6.
45-cm2),2-oz.
(0.
071-mmthick)Cupadona1.
5-inch*1.
5-inch(3.
81-cm*3.
81-cm),0.
06-inch(1.
52-mm)thickFR4PCB.
RθJCisspecifiedbydesign,whereasRθJAisdeterminedbytheuser'sboarddesign.
(2)DevicemountedonFR4materialwith1-inch2(6.
45-cm2),2-oz.
(0.
071-mmthick)Cu.
2Copyright2013,TexasInstrumentsIncorporatedCSD25402Q3Awww.
ti.
com.
cnZHCSBY6–DECEMBER2013MaxRθJA=175°C/WMaxRθJA=55°C/Wwhenmountedonwhenmountedonminimumpadareaof1inch2of2oz.
Cu.
2oz.
Cu.
TYPICALMOSFETCHARACTERISTICS(TA=25°Cunlessotherwisestated)Figure1.
TransientThermalImpedanceCopyright2013,TexasInstrumentsIncorporated3CSD25402Q3AZHCSBY6–DECEMBER2013www.
ti.
com.
cnTYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure2.
SaturationCharacteristicsFigure3.
TransferCharacteristicsTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure4.
GateChargeFigure5.
CapacitanceTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure6.
ThresholdVoltagevs.
TemperatureFigure7.
On-StateResistancevs.
Gate-to-SourceVoltage4Copyright2013,TexasInstrumentsIncorporatedCSD25402Q3Awww.
ti.
com.
cnZHCSBY6–DECEMBER2013TYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure8.
NormalizedOn-StateResistancevs.
TemperatureFigure9.
TypicalDiodeForwardVoltageTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure10.
MaximumSafeOperatingAreaFigure11.
MaximumDrainCurrentvs.
TemperatureCopyright2013,TexasInstrumentsIncorporated5CSD25402Q3AZHCSBY6–DECEMBER2013www.
ti.
com.
cnMECHANICALDATAQ3APackageDimensions6Copyright2013,TexasInstrumentsIncorporatedCSD25402Q3Awww.
ti.
com.
cnZHCSBY6–DECEMBER2013Q3ARecommendedPCBPatternForrecommendedcircuitlayoutforPCBdesigns,seeapplicationnoteSLPA005–ReducingRingingThroughPCBLayoutTechniques.
Q3ARecommendedStencilPatternCopyright2013,TexasInstrumentsIncorporated7CSD25402Q3AZHCSBY6–DECEMBER2013www.
ti.
com.
cnQ3ATapeandReelInformationNotes:1.
10-sprockethole-pitchcumulativetolerance±0.
22.
Cambernottoexceed1mmin100mm,noncumulativeover250mm3.
Material:blackstatic-dissipativepolystyrene4.
Alldimensionsareinmm,unlessotherwisespecified5.
Thickness:0.
30±0.
05mm6.
MSL1260°C(IRandconvection)PbFreflowcompatible8Copyright2013,TexasInstrumentsIncorporatedPACKAGEOPTIONADDENDUMwww.
ti.
com10-Dec-2020Addendum-Page1PACKAGINGINFORMATIONOrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Leadfinish/Ballmaterial(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)SamplesCSD25402Q3AACTIVEVSONPDNH82500RoHS&GreenSNLevel-1-260C-UNLIM-55to15025402CSD25402Q3ATACTIVEVSONPDNH8250RoHS&GreenSNLevel-1-260C-UNLIM-55to15025402(1)Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.
Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.
Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)RoHS:TIdefines"RoHS"tomeansemiconductorproductsthatarecompliantwiththecurrentEURoHSrequirementsforall10RoHSsubstances,includingtherequirementthatRoHSsubstancedonotexceed0.
1%byweightinhomogeneousmaterials.
Wheredesignedtobesolderedathightemperatures,"RoHS"productsaresuitableforuseinspecifiedlead-freeprocesses.
TImayreferencethesetypesofproductsas"Pb-Free".
RoHSExempt:TIdefines"RoHSExempt"tomeanproductsthatcontainleadbutarecompliantwithEURoHSpursuanttoaspecificEURoHSexemption.
Green:TIdefines"Green"tomeanthecontentofChlorine(Cl)andBromine(Br)basedflameretardantsmeetJS709Blowhalogenrequirementsof.
com.
cn/zh-cn/legal/termsofsale.
html)以及ti.
com.
cn上或随附TI产品提供的其他可适用条款的约束.
TI提供所述资源并不扩展或以其他方式更改TI针对TI产品所发布的可适用的担保范围或担保免责声明.
IMPORTANTNOTICE邮寄地址:上海市浦东新区世纪大道1568号中建大厦32楼,邮政编码:200122Copyright2020德州仪器半导体技术(上海)有限公司
BlueHost 主机商在以前做外贸网站的时候还是经常会用到的,想必那时候有做外贸网站或者是选择海外主机的时候还是较多会用BlueHost主机商的。只不过这些年云服务器流行且性价比较高,于是大家可选择商家变多,但是BlueHost在外贸主机用户群中可选的还是比较多的。这次年中618活动大促来袭,毕竟BLUEHOST商家目前中文公司设立在上海,等后面有机会也过去看看。他们也会根据我们的国内年中促销发...
想必我们有一些朋友应该陆续收到国内和国外的域名注册商关于域名即将涨价的信息。大概的意思是说从9月1日开始,.COM域名会涨价一点点,大约需要单个9.99美元左右一个。其实对于大部分用户来说也没多大的影响,毕竟如今什么都涨价,域名涨一点点也不要紧。如果是域名较多的话,确实增加续费成本和注册成本。今天整理看到Dynadot有发布新的八月份域名优惠活动,.COM首年注册依然是仅需48元,本次优惠活动截止...
易探云服务器怎么样?易探云是国内一家云计算服务商家,致力香港云服务器、美国云服务器、国内外服务器租用及托管等互联网业务,目前主要地区为运作香港BGP、香港CN2、广东、北京、深圳等地区。目前,易探云推出的国内云服务器优惠活动,国内云服务器2核2G5M云服务器低至330元/年起;成都4核8G/200G硬盘/15M带宽,仅1888元/3年起!易探云便宜vps服务器配置推荐:易探云vps云主机,入门型云...
.com.cn为你推荐
徐州发布官方微信版本itunes万家增强收益债券型证券投资基金"2014年全国民营企业招聘会现场A区域企业信息",,,,支持ipad流量支付宝支持ipadCTios重庆宽带测速重庆联通宽带测速的网址是好多呢?ipad如何上网如何用手机流量在IPAD上上网
万网域名查询 php空间租用 日本vps 如何查询域名备案号 老左 vpsio 512au 免费个人博客 100x100头像 bgp双线 世界测速 傲盾官网 昆明蜗牛家 33456 vip域名 上海联通宽带测速 如何建立邮箱 江苏双线服务器 个人免费邮箱 万网空间 更多