pointsmartvps
smartvps 时间:2021-01-03 阅读:(
)
ProductSummaryDrainsourcevoltageVDS42VOn-stateresistanceRDS(on)50mWNominalloadcurrentID(Nom)3AClampingenergyEAS500mJVPS051631234Application·Allkindsofresistive,inductiveandcapacitiveloadsinswitchingorlinearapplications·Ccompatiblepowerswitchfor12VDCapplications·ReplaceselectromechanicalrelaysanddiscretecircuitsGeneralDescriptionNchannelverticalpowerFETinSmartSIPMOStechnology.
Fullyprotectedbyembeddedprotectionfunctions.
Gate-DrivingUnitESDOverloadProtectionOver-temperatureProtectionShortcircuitProtectionOvervoltage-ProtectionCurrentLimitationMVbbInSourceDrainHITFETPin1Pin2and4(TAB)Pin3Completeproductspectrumandadditionalinformationhttp://www.
infineon.
com/hitfetFeatures·LogicLevelInput·InputProtection(ESD)·ThermalshutdownwithautorestartGreenproduct(RoHScompliant)·Overloadprotection·Shortcircuitprotection·Overvoltageprotection·Currentlimitation·AnalogdrivingpossibleDatasheet1Rev.
1.
3,2008-04-14SmartLowSidePowerSwitchHITFETBSP78MaximumRatingsatTj=25°C,unlessotherwisespecifiedParameterSymbolValueUnitDrainsourcevoltageVDS42VSupplyvoltageforfullshortcircuitprotectionVbb(SC)42Continuousinputvoltage1)VIN-0.
22).
.
.
+10Continuousinputcurrent2)-0.
2VVIN10VVIN10VIINselflimited|IIN|2mAOperatingtemperatureTj-40.
.
.
+150°CStoragetemperatureTstg-55.
.
.
+150Powerdissipation5)TC=85°CPtot3.
8WUnclampedsinglepulseinductiveenergy2)EAS500mJLoaddumpprotectionVLoadDump2)3)=VA+VSVIN=0and10V,td=400ms,RI=2W,RL=4.
5W,VA=13.
5VVLD53.
5VVESD2kVThermalresistancejunction-ambient:@min.
footprint@6cm2coolingarea4)RthJA12572K/Wjunction-solderingpoint:RthJS17K/W1ForinputvoltagesbeyondtheselimitsIINhastobelimited.
2notsubjecttoproductiontest,specifiedbydesign3VLoaddumpissetupwithouttheDUTconnectedtothegeneratorperISO7637-1andDIN408394Deviceon50mm*50mm*1.
5mmepoxyPCBFR4with6cm2(onelayer,70mthick)copperareafordrainconnection.
PCBmountedverticalwithoutblownair.
5notsubjecttoproductiontest,calculatedbyRthJAandRds(on)Electrostaticdischargevoltage2)(HumanBodyModel)accordingtoJedecnormEIA/JESD22-A114-B,Section4Datasheet2Rev.
1.
3,2008-04-14SmartLowSidePowerSwitchHITFETBSP78ElectricalCharacteristicsParameterSymbolValuesUnitatTj=25°C,unlessotherwisespecifiedmin.
typ.
max.
CharacteristicsDrainsourceclampvoltageTj=-40.
.
.
+150,ID=10mAVDS(AZ)42-55VOff-statedraincurrentTj=-40.
.
.
+85°C,VDS=32V,VIN=0VTj=150°CIDSS--1.
55815AInputthresholdvoltageID=1.
4mA,Tj=25°CID=1.
4mA,Tj=150°CVIN(th)1.
30.
81.
7-2.
2-VOnstateinputcurrentIIN(on)-1030AOn-stateresistanceVIN=5V,ID=3A,Tj=25°CVIN=5V,ID=3A,Tj=150°CRDS(on)--457560100mWOn-stateresistanceVIN=10V,ID=3A,Tj=25°CVIN=10V,ID=3A,Tj=150°CRDS(on)--35655090Nominalloadcurrent5)VDS=0.
5V,Tj2.
5V)1)VIN=10V,VDS=12V,tm=200sID(lim)1824301Deviceswitchedonintoexistingshortcircuit(seediagramDeterminationofID(lim)).
Ifthedeviceisinonconditandashortcircuitoccurs,thesevaluesmightbeexceededformax.
50s.
5notsubjecttoproductiontest,calculatedbyRthJAandRds(on)Datasheet3Rev.
1.
3,2008-04-14SmartLowSidePowerSwitchHITFETBSP78ElectricalCharacteristicsParameterSymbolValuesUnitatTj=25°C,unlessotherwisespecifiedmin.
typ.
max.
DynamicCharacteristicsTurn-ontimeVINto90%ID:RL=4.
7W,VIN=0to10V,Vbb=12Vton-60100sTurn-offtimeVINto10%ID:RL=4.
7W,VIN=10to0V,Vbb=12Vtoff-60100Slewrateon70to50%Vbb:RL=4.
7W,VIN=0to10V,Vbb=12V-dVDS/dton-0.
31.
5V/sSlewrateoff50to70%Vbb:RL=4.
7W,VIN=10to0V,Vbb=12VdVDS/dtoff-0.
71.
5ProtectionFunctions1)ThermaloverloadtriptemperatureTjt150175-°CThermalhysteresis2)DTjt-10-KInputcurrentprotectionmodeTj=150°CIIN(Prot)-130300AUnclampedsinglepulseinductiveenergy2)ID=3A,Tj=25°C,Vbb=12VEAS500--mJInverseDiodeInversediodeforwardvoltageIF=15A,tm=250s,VIN=0V,tP=300sVSD-11.
5V1IntegratedprotectionfunctionsaredesignedtopreventICdestructionunderfaultconditionsdescribedinthedatasheet.
Faultconditionsareconsideredas"outside"normaloperatingrange.
Protectionfunctionsarenotdesignedforcontinuousrepetitiveoperation.
2notsubjecttoproductiontest,specifiedbydesignDatasheet4Rev.
1.
3,2008-04-14SmartLowSidePowerSwitchHITFETBSP78BlockdiagramInductiveandovervoltageoutputclampTermsHITFETINDVINIDVDS1IINSVbbRL23HITFETVZDSShortcircuitbehaviourInputcircuit(ESDprotection)GateDriveSource/GroundInputVINIINIDSTjDatasheet5Rev.
1.
3,2008-04-14SmartLowSidePowerSwitchHITFETBSP781MaximumallowablepowerdissipationPtot=f(TS)resp.
Ptot=f(TA)@RthJA=72K/W-75-50-250255075100°C150TS;TA012345678W10Ptot6cm2max.
2On-stateresistanceRON=f(Tj);ID=3A;VIN=10V-50-250255075100125°C175Tj01020304050607080mW100RDS(on)typ.
max.
3On-stateresistanceRON=f(Tj);ID=3A;VIN=5V-50-250255075100125°C175Tj0102030405060708090mW110RDS(on)typ.
max.
4Typ.
inputthresholdvoltageVIN(th)=f(Tj);ID=0.
7mA;VDS=12V-50-250255075100°C150Tj00.
20.
40.
60.
811.
21.
41.
6V2VGS(th)Datasheet6Rev.
1.
3,2008-04-14SmartLowSidePowerSwitchHITFETBSP785Typ.
transfercharacteristicsID=f(VIN);VDS=12V;TJstart=25°C012345678V10VIN05101520A30ID6Typ.
shortcircuitcurrentID(lim)=f(Tj);VDS=12VParameter:VIN-50-250255075100125°C175Tj05101520A30ID5VVin=10V7Typ.
outputcharacteristicsID=f(VDS);TJstart=25°CParameter:VIN01234V6VDS0510152025A35IDVin=3V4V5V6V10V7V8Off-statedraincurrentIDSS=f(Tj)-40-1510356085110135°C185Tj024681012A16IDSStyp.
max.
Datasheet7Rev.
1.
3,2008-04-14SmartLowSidePowerSwitchHITFETBSP789Typ.
overloadcurrentID(lim)=f(t),Vbb=12V,noheatsinkParameter:Tjstart00.
511.
522.
53ms4t051015202530A40ID(lim)-40°C25°C85°C150°C10Typ.
transientthermalimpedanceZthJA=f(tp)@6cm2coolingareaParameter:D=tp/T10-710-610-510-410-310-210-1100101103stp-310-210-110010110210K/WZthJASinglepulse0.
010.
020.
050.
10.
2D=0.
511DeterminationofID(lim)ID(lim)=f(t);tm=200sParameter:TJstart00.
10.
20.
30.
4ms0.
6t051015202530A40ID(lim)-40°C25°C85°C150°CDatasheet8Rev.
1.
3,2008-04-14SmartLowSidePowerSwitchHITFETBSP78Datasheet9Rev.
1.
3,2008-04-14SmartLowSidePowerSwitchHITFETBSP78PackageOutlines1PackageOutlinesGPS0556012334±0.
1±0.
040.
5MIN.
0.
280.
1MAX.
15MAX.
6.
5±0.
2A4.
62.
30.
7±0.
10.
25MA1.
6±0.
17±0.
3B0.
25M±0.
23.
5B0.
.
.
10Figure1PG-SOT223-4(PlasticGreenSmallOutlineTransistorPackage)GreenProduct(RoHScompliant)Tomeettheworld-widecustomerrequirementsforenvironmentallyfriendlyproductsandtobecompliantwithgovernmentregulationsthedeviceisavailableasagreenproduct.
GreenproductsareRoHS-Compliant(i.
ePb-freefinishonleadsandsuitableforPb-freesolderingaccordingtoIPC/JEDECJ-STD-020).
Pleasespecifythepackageneeded(e.
g.
greenpackage)whenplacinganorderYoucanfindallofourpackages,sortsofpackingandothersinourInfineonInternetPage"Products":http://www.
infineon.
com/products.
DimensionsinmmDatasheet10Rev.
1.
3,2008-04-14SmartLowSidePowerSwitchHITFETBSP78RevisionHistory2RevisionHistoryVersionDateChangesRev.
1.
32008-04-14PackageinformationupdatedtoSOT223-4Rev.
1.
22007-02-15releasedautomotivegreenversionPackageparameter(humidityandclimatic)removedinMaximumratingsAECiconaddedRoHSiconaddedGreenproduct(RoHS-compliant)addedtothefeaturelistPackageinformationupdatedtogreenGreenexplanationaddedRev.
1.
12004-03-05releasedproductionversionEdition2008-04-14PublishedbyInfineonTechnologiesAG81726Munich,GermanyInfineonTechnologiesAG2008.
AllRightsReserved.
LegalDisclaimerTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics("Beschaffenheitsgarantie").
Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
InformationForfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineonTechnologiesOffice(www.
infineon.
com).
WarningsDuetotechnicalrequirementscomponentsmaycontaindangeroussubstances.
ForinformationonthetypesinquestionpleasecontactyournearestInfineonTechnologiesOffice.
InfineonTechnologiesComponentsmayonlybeusedinlife-supportdevicesorsystemswiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-supportdeviceorsystem,ortoaffectthesafetyoreffectivenessofthatdeviceorsystem.
Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbody,ortosupportand/ormaintainandsustainand/orprotecthumanlife.
Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
buyvm的第四个数据中心上线了,位于美国东南沿海的迈阿密市。迈阿密的VPS依旧和buyvm其他机房的一样,KVM虚拟,Ryzen 9 3900x、DDR4、NVMe、1Gbps带宽、不限流量。目前还没有看见buyvm上架迈阿密的block storage,估计不久也会有的。 官方网站:https://my.frantech.ca/cart.php?gid=48 加密货币、信用卡、PayPal、...
RAKsmart发布了新年钜惠活动,即日起到2月28日,商家每天推出限量服务器秒杀,美国服务器每月30美元起,新上了韩国服务器、GPU服务器、香港/日本/美国常规+站群服务器、1-10Gbps不限流量大带宽服务器等大量库存;VPS主机全场提供7折优惠码,同时针对部分特惠套餐无码直购每月仅1.99美元,支持使用PayPal或者支付宝等方式付款,有中英文网页及客服支持。爆款秒杀10台/天可选精品网/大...
部落曾经在去年分享过一次Boomer.host的信息,商家自述始于2018年,提供基于OpenVZ架构的VPS主机,配置不高价格较低。最近,主机商又在LET发了几款特价年付主机促销,最低每年仅4.95美元起,有独立IPv4+IPv6,开设在德克萨斯州休斯顿机房。下面列出几款VPS主机配置信息。CPU:1core内存:512MB硬盘:5G SSD流量:500GB/500Mbps架构:KVMIP/面板...
smartvps为你推荐
域名空间什么是空间 什么是域名com域名空间域名和空间是什么意思ip代理地址ip代理是什么?php虚拟空间怎样修改php虚拟空间单个文件上传大小限制php虚拟空间虚拟空间怎么修改php.ini配置免费网站空间免费网站空间哪个好北京网站空间网站空间哪里的好,免备案虚拟主机哪家免备案虚拟主机好,而且便宜点的?windows虚拟主机在windows上怎么安装虚拟机西安虚拟主机西安云主机/云主机与vps有哪些区别
虚拟主机申请 贝锐花生壳域名 ion 免费主机 webhosting 账号泄露 英文站群 国外在线代理 godaddy域名证书 免费mysql 135邮箱 阿里校园 tna官网 qq对话框 qq云端 如何用qq邮箱发邮件 idc查询 申请网页 超级服务器 华为云服务登录 更多