Tstgykt
ykt 178zx com cn 时间:2021-03-01 阅读:()
SUMMARYV(BR)DSS=-60V;RDS(ON)=0.
125ID=-3.
0ADESCRIPTIONThisnewgenerationoftrenchMOSFETsfromZetexutilizesauniquestructurethatcombinesthebenefitsoflowon-resistancewithfastswitchingspeed.
Thismakesthemidealforhighefficiency,lowvoltage,powermanagementapplications.
FEATURESLowon-resistanceFastswitchingspeedLowthresholdLowgatedriveSOT23-6packageAPPLICATIONSDC-DCConvertersPowermanagementfunctionsDisconnectswitchesMotorcontrolDEVICEMARKING617ZXMP6A17E6PROVISIONALISSUEB-MARCH2005ADVANCEINFORMATION160VP-CHANNELENHANCEMENTMODEMOSFETDEVICEREELSIZETAPEWIDTHQUANTITYPERREELZXMP6A17E6TA7"8mm3000unitsZXMP6A17E6TC13"8mm10000unitsORDERINGINFORMATIONTopViewPINOUTSOT23-6ZXMP6A17E6PROVISIONALISSUEB-MARCH20052ADVANCEINFORMATIONPARAMETERSYMBOLVALUEUNITJunctiontoAmbient(a)RθJA113°C/WJunctiontoAmbient(b)RθJA73°C/WNOTES(a)Foradevicesurfacemountedon25mmx25mmFR4PCBwithhighcoverageofsinglesided1ozcopper,instillairconditions(b)ForadevicesurfacemountedonFR4PCBmeasuredattр5secs.
(c)Repetitiverating25mmx25mmFR4PCB,D=0.
02,pulsewidth300s-pulsewidthlimitedbymaximumjunctiontemperature.
RefertoTransientThermalImpedancegraph.
THERMALRESISTANCEPARAMETERSYMBOLLIMITUNITDrain-SourceVoltageVDSS-60VGateSourceVoltageVGS20VContinuousDrainCurrentVGS=10V;TA=25°C(b)VGS=10V;TA=70°C(b)VGS=10V;TA=25°C(a)ID-3.
0-2.
4-2.
3APulsedDrainCurrent(c)IDM-13.
6AContinuousSourceCurrent(BodyDiode)(b)IS-2.
5APulsedSourceCurrent(BodyDiode)(c)ISM-13.
6APowerDissipationatTA=25°C(a)LinearDeratingFactorPD1.
18.
8WmW/°CPowerDissipationatTA=25°C(b)LinearDeratingFactorPD1.
713.
6WmW/°COperatingandStorageTemperatureRangeTj:Tstg-55to+150°CABSOLUTEMAXIMUMRATINGSZXMP6A17E6PROVISIONALISSUEB-MARCH20053ADVANCEINFORMATION11010010m100m11002550751001251500.
00.
20.
40.
60.
81.
01.
21001m10m100m1101001k0204060801001001m10m100m1101001k110100100us100ms1sRDS(ON)Limited1msP-channelSafeOperatingAreaSinglePulse,Tamb=25°CDC10ms-IDDrainCurrent(A)-VDSDrain-SourceVoltage(V)DeratingCurveMaxPowerDissipation(W)Temperature(°C)D=0.
2D=0.
5D=0.
1TransientThermalImpedanceSinglePulseD=0.
05ThermalResistance(°C/W)PulseWidth(s)SinglePulseTamb=25°CPulsePowerDissipationMaximumPower(W)PulseWidth(s)CHARACTERISTICSZXMP6A17E6PROVISIONALISSUEB-MARCH2005ADVANCEINFORMATION4PARAMETERSYMBOLMIN.
TYP.
MAX.
UNITCONDITIONSSTATICDrain-SourceBreakdownVoltageV(BR)DSS-60VID=-250A,VGS=0VZeroGateVoltageDrainCurrentIDSS-1.
0AVDS=-60V,VGS=0VGate-BodyLeakageIGSS100nAVGS=20V,VDS=0VGate-SourceThresholdVoltageVGS(th)-1.
0VID=-250A,VDS=VGSStaticDrain-SourceOn-StateResistance(1)RDS(on)0.
1250.
190VGS=-10V,ID=-2.
3AVGS=-4.
5V,ID=-1.
9AForwardTransconductance(1)(3)gfs4.
9SVDS=-15V,ID=-2.
3ADYNAMIC(3)InputCapacitanceCiss670pFVDS=-30V,VGS=0V,f=1MHzOutputCapacitanceCoss46.
7pFReverseTransferCapacitanceCrss28pFSWITCHING(2)(3)Turn-OnDelayTimetd(on)2.
4nsVDD=-30V,ID=-1ARG6.
0,VGS=-10VRiseTimetr3.
5nsTurn-OffDelayTimetd(off)30.
0nsFallTimetf7.
4nsGateChargeQg7.
3nCVDS=-30V,VGS=-5V,ID=-2.
3ATotalGateChargeQg15.
1nCVDS=-30V,VGS=-10V,ID=-2.
3AGate-SourceChargeQgs1.
8nCGate-DrainChargeQgd1.
9nCSOURCE-DRAINDIODEDiodeForwardVoltage(1)VSD-0.
85-0.
95VTJ=25°C,IS=-2A,VGS=0VReverseRecoveryTime(3)trr26.
4nsTJ=25°C,IF=-1.
7A,di/dt=100A/sReverseRecoveryCharge(3)Qrr32.
7nCELECTRICALCHARACTERISTICS(atTA=25°Cunlessotherwisestated)NOTES:(1)Measuredunderpulsedconditions.
Width=300s.
Dutycycle≤2%.
(2)Switchingcharacteristicsareindependentofoperatingjunctiontemperature.
(3)Fordesignaidonly,notsubjecttoproductiontesting.
ZXMP6A17E6PROVISIONALISSUEB-MARCH20055ADVANCEINFORMATION0.
11100.
010.
11100.
11100.
010.
1110123450.
1110-500501001500.
40.
60.
81.
01.
21.
41.
61.
82.
00.
11100.
11100.
00.
20.
40.
60.
81.
01.
21.
40.
010.
111010V2V3.
5V-VGS2.
5V4.
5V3VOutputCharacteristicsT=25°C-VGS-IDDrainCurrent(A)-VDSDrain-SourceVoltage(V)1.
5V3.
5V3V2V4.
5V10V2.
5VOutputCharacteristicsT=150°C-IDDrainCurrent(A)-VDSDrain-SourceVoltage(V)TypicalTransferCharacteristics-VDS=10VT=25°CT=150°C-IDDrainCurrent(A)-VGSGate-SourceVoltage(V)NormalisedCurvesvTemperatureRDS(on)VGS=-10VID=-0.
9AVGS(th)VGS=VDSID=-250uANormalisedRDS(on)andVGS(th)TjJunctionTemperature(°C)4.
5V10V3V2V3.
5V2.
5VOn-ResistancevDrainCurrentT=25°C-VGSRDS(on)Drain-SourceOn-Resistance()-IDDrainCurrent(A)T=150°CT=25°CSource-DrainDiodeForwardVoltage-VSDSource-DrainVoltage(V)-ISDReverseDrainCurrent(A)TYPICALCHARACTERISTICSZXMP6A17E6PROVISIONALISSUEB-MARCH20056ADVANCEINFORMATION0.
111001002003004005006007008009001000CRSSCOSSCISSVGS=0Vf=1MHzCCapacitance(pF)-VDS-Drain-SourceVoltage(V)02468101214160246810ID=-2.
2AVDS=-30VGate-SourceVoltagevGateChargeCapacitancevDrain-SourceVoltageQ-Charge(nC)-VGSGate-SourceVoltage(V)TYPICALCHARACTERISTICSZXMP6A17E6PROVISIONALISSUEB-MARCH20057EuropeZetexGmbHStreitfeldstrae19D-81673MünchenGermanyTelefon:(49)894549490Fax:(49)8945494949europe.
sales@zetex.
comAmericasZetexInc700VeteransMemorialHwyHauppauge,NY11788USATelephone:(1)6313602222Fax:(1)6313608222usa.
sales@zetex.
comAsiaPacificZetex(Asia)Ltd3701-04MetroplazaTower1HingFongRoad,KwaiFongHongKongTelephone:(852)26100611Fax:(852)24250494asia.
sales@zetex.
comCorporateHeadquartersZetexSemiconductorsplcZetexTechnologyPark,ChaddertonOldham,OL99LLUnitedKingdomTelephone(44)1616224444Fax:(44)1616224446hq@zetex.
comTheseofficesaresupportedbyagentsanddistributorsinmajorcountriesworld-wide.
Thispublicationisissuedtoprovideoutlineinformationonlywhich(unlessagreedbytheCompanyinwriting)maynotbeused,appliedorreproducedforanypurposeorformpartofanyorderorcontractorberegardedasarepresentationrelatingtotheproductsorservicesconcerned.
TheCompanyreservestherighttoalterwithoutnoticethespecification,design,priceorconditionsofsupplyofanyproductorservice.
Forthelatestproductinformation,logontowww.
zetex.
comZetexSemiconductorsplc2005ADVANCEINFORMATIONDIMMillimetersInchesDIMMillimetersInchesMinMaxMinMaxMinMaxMinMaxA0.
901.
450.
350.
057E2.
603.
000.
1020.
118A10.
000.
1500.
006E11.
501.
750.
0590.
069A20.
901.
300.
0350.
051L0.
100.
600.
0040.
002b0.
350.
500.
0140.
019e0.
95REF0.
037REFC0.
090.
200.
00350.
008e11.
90REF0.
074REFD2.
803.
000.
1100.
118L0°10°0°10°PACKAGEDIMENSIONSCONTROLLINGDIMENSIONSINMILLIMETERSAPPROXCONVERSIONSINCHES.
PACKAGEOUTLINEPADLAYOUTDETAILS
125ID=-3.
0ADESCRIPTIONThisnewgenerationoftrenchMOSFETsfromZetexutilizesauniquestructurethatcombinesthebenefitsoflowon-resistancewithfastswitchingspeed.
Thismakesthemidealforhighefficiency,lowvoltage,powermanagementapplications.
FEATURESLowon-resistanceFastswitchingspeedLowthresholdLowgatedriveSOT23-6packageAPPLICATIONSDC-DCConvertersPowermanagementfunctionsDisconnectswitchesMotorcontrolDEVICEMARKING617ZXMP6A17E6PROVISIONALISSUEB-MARCH2005ADVANCEINFORMATION160VP-CHANNELENHANCEMENTMODEMOSFETDEVICEREELSIZETAPEWIDTHQUANTITYPERREELZXMP6A17E6TA7"8mm3000unitsZXMP6A17E6TC13"8mm10000unitsORDERINGINFORMATIONTopViewPINOUTSOT23-6ZXMP6A17E6PROVISIONALISSUEB-MARCH20052ADVANCEINFORMATIONPARAMETERSYMBOLVALUEUNITJunctiontoAmbient(a)RθJA113°C/WJunctiontoAmbient(b)RθJA73°C/WNOTES(a)Foradevicesurfacemountedon25mmx25mmFR4PCBwithhighcoverageofsinglesided1ozcopper,instillairconditions(b)ForadevicesurfacemountedonFR4PCBmeasuredattр5secs.
(c)Repetitiverating25mmx25mmFR4PCB,D=0.
02,pulsewidth300s-pulsewidthlimitedbymaximumjunctiontemperature.
RefertoTransientThermalImpedancegraph.
THERMALRESISTANCEPARAMETERSYMBOLLIMITUNITDrain-SourceVoltageVDSS-60VGateSourceVoltageVGS20VContinuousDrainCurrentVGS=10V;TA=25°C(b)VGS=10V;TA=70°C(b)VGS=10V;TA=25°C(a)ID-3.
0-2.
4-2.
3APulsedDrainCurrent(c)IDM-13.
6AContinuousSourceCurrent(BodyDiode)(b)IS-2.
5APulsedSourceCurrent(BodyDiode)(c)ISM-13.
6APowerDissipationatTA=25°C(a)LinearDeratingFactorPD1.
18.
8WmW/°CPowerDissipationatTA=25°C(b)LinearDeratingFactorPD1.
713.
6WmW/°COperatingandStorageTemperatureRangeTj:Tstg-55to+150°CABSOLUTEMAXIMUMRATINGSZXMP6A17E6PROVISIONALISSUEB-MARCH20053ADVANCEINFORMATION11010010m100m11002550751001251500.
00.
20.
40.
60.
81.
01.
21001m10m100m1101001k0204060801001001m10m100m1101001k110100100us100ms1sRDS(ON)Limited1msP-channelSafeOperatingAreaSinglePulse,Tamb=25°CDC10ms-IDDrainCurrent(A)-VDSDrain-SourceVoltage(V)DeratingCurveMaxPowerDissipation(W)Temperature(°C)D=0.
2D=0.
5D=0.
1TransientThermalImpedanceSinglePulseD=0.
05ThermalResistance(°C/W)PulseWidth(s)SinglePulseTamb=25°CPulsePowerDissipationMaximumPower(W)PulseWidth(s)CHARACTERISTICSZXMP6A17E6PROVISIONALISSUEB-MARCH2005ADVANCEINFORMATION4PARAMETERSYMBOLMIN.
TYP.
MAX.
UNITCONDITIONSSTATICDrain-SourceBreakdownVoltageV(BR)DSS-60VID=-250A,VGS=0VZeroGateVoltageDrainCurrentIDSS-1.
0AVDS=-60V,VGS=0VGate-BodyLeakageIGSS100nAVGS=20V,VDS=0VGate-SourceThresholdVoltageVGS(th)-1.
0VID=-250A,VDS=VGSStaticDrain-SourceOn-StateResistance(1)RDS(on)0.
1250.
190VGS=-10V,ID=-2.
3AVGS=-4.
5V,ID=-1.
9AForwardTransconductance(1)(3)gfs4.
9SVDS=-15V,ID=-2.
3ADYNAMIC(3)InputCapacitanceCiss670pFVDS=-30V,VGS=0V,f=1MHzOutputCapacitanceCoss46.
7pFReverseTransferCapacitanceCrss28pFSWITCHING(2)(3)Turn-OnDelayTimetd(on)2.
4nsVDD=-30V,ID=-1ARG6.
0,VGS=-10VRiseTimetr3.
5nsTurn-OffDelayTimetd(off)30.
0nsFallTimetf7.
4nsGateChargeQg7.
3nCVDS=-30V,VGS=-5V,ID=-2.
3ATotalGateChargeQg15.
1nCVDS=-30V,VGS=-10V,ID=-2.
3AGate-SourceChargeQgs1.
8nCGate-DrainChargeQgd1.
9nCSOURCE-DRAINDIODEDiodeForwardVoltage(1)VSD-0.
85-0.
95VTJ=25°C,IS=-2A,VGS=0VReverseRecoveryTime(3)trr26.
4nsTJ=25°C,IF=-1.
7A,di/dt=100A/sReverseRecoveryCharge(3)Qrr32.
7nCELECTRICALCHARACTERISTICS(atTA=25°Cunlessotherwisestated)NOTES:(1)Measuredunderpulsedconditions.
Width=300s.
Dutycycle≤2%.
(2)Switchingcharacteristicsareindependentofoperatingjunctiontemperature.
(3)Fordesignaidonly,notsubjecttoproductiontesting.
ZXMP6A17E6PROVISIONALISSUEB-MARCH20055ADVANCEINFORMATION0.
11100.
010.
11100.
11100.
010.
1110123450.
1110-500501001500.
40.
60.
81.
01.
21.
41.
61.
82.
00.
11100.
11100.
00.
20.
40.
60.
81.
01.
21.
40.
010.
111010V2V3.
5V-VGS2.
5V4.
5V3VOutputCharacteristicsT=25°C-VGS-IDDrainCurrent(A)-VDSDrain-SourceVoltage(V)1.
5V3.
5V3V2V4.
5V10V2.
5VOutputCharacteristicsT=150°C-IDDrainCurrent(A)-VDSDrain-SourceVoltage(V)TypicalTransferCharacteristics-VDS=10VT=25°CT=150°C-IDDrainCurrent(A)-VGSGate-SourceVoltage(V)NormalisedCurvesvTemperatureRDS(on)VGS=-10VID=-0.
9AVGS(th)VGS=VDSID=-250uANormalisedRDS(on)andVGS(th)TjJunctionTemperature(°C)4.
5V10V3V2V3.
5V2.
5VOn-ResistancevDrainCurrentT=25°C-VGSRDS(on)Drain-SourceOn-Resistance()-IDDrainCurrent(A)T=150°CT=25°CSource-DrainDiodeForwardVoltage-VSDSource-DrainVoltage(V)-ISDReverseDrainCurrent(A)TYPICALCHARACTERISTICSZXMP6A17E6PROVISIONALISSUEB-MARCH20056ADVANCEINFORMATION0.
111001002003004005006007008009001000CRSSCOSSCISSVGS=0Vf=1MHzCCapacitance(pF)-VDS-Drain-SourceVoltage(V)02468101214160246810ID=-2.
2AVDS=-30VGate-SourceVoltagevGateChargeCapacitancevDrain-SourceVoltageQ-Charge(nC)-VGSGate-SourceVoltage(V)TYPICALCHARACTERISTICSZXMP6A17E6PROVISIONALISSUEB-MARCH20057EuropeZetexGmbHStreitfeldstrae19D-81673MünchenGermanyTelefon:(49)894549490Fax:(49)8945494949europe.
sales@zetex.
comAmericasZetexInc700VeteransMemorialHwyHauppauge,NY11788USATelephone:(1)6313602222Fax:(1)6313608222usa.
sales@zetex.
comAsiaPacificZetex(Asia)Ltd3701-04MetroplazaTower1HingFongRoad,KwaiFongHongKongTelephone:(852)26100611Fax:(852)24250494asia.
sales@zetex.
comCorporateHeadquartersZetexSemiconductorsplcZetexTechnologyPark,ChaddertonOldham,OL99LLUnitedKingdomTelephone(44)1616224444Fax:(44)1616224446hq@zetex.
comTheseofficesaresupportedbyagentsanddistributorsinmajorcountriesworld-wide.
Thispublicationisissuedtoprovideoutlineinformationonlywhich(unlessagreedbytheCompanyinwriting)maynotbeused,appliedorreproducedforanypurposeorformpartofanyorderorcontractorberegardedasarepresentationrelatingtotheproductsorservicesconcerned.
TheCompanyreservestherighttoalterwithoutnoticethespecification,design,priceorconditionsofsupplyofanyproductorservice.
Forthelatestproductinformation,logontowww.
zetex.
comZetexSemiconductorsplc2005ADVANCEINFORMATIONDIMMillimetersInchesDIMMillimetersInchesMinMaxMinMaxMinMaxMinMaxA0.
901.
450.
350.
057E2.
603.
000.
1020.
118A10.
000.
1500.
006E11.
501.
750.
0590.
069A20.
901.
300.
0350.
051L0.
100.
600.
0040.
002b0.
350.
500.
0140.
019e0.
95REF0.
037REFC0.
090.
200.
00350.
008e11.
90REF0.
074REFD2.
803.
000.
1100.
118L0°10°0°10°PACKAGEDIMENSIONSCONTROLLINGDIMENSIONSINMILLIMETERSAPPROXCONVERSIONSINCHES.
PACKAGEOUTLINEPADLAYOUTDETAILS
- Tstgykt相关文档
- 公司ykt
- 北京市ykt
- 合金ykt
- placeboykt
- 4.8ykt
- maximumykt
青果网络-618阿里云，腾讯云特惠优惠折上折！
官方网站：点击访问青果云官方网站活动方案：—————————–活动规则—————————1、选购活动产品并下单（先不要支付）2、联系我司在线客服修改价格或领取赠送时间3、确认价格已按活动政策修改正确后，支付订单，到此产品开设成功4、本活动产品可以升级，升级所需费用按产品原价计算若发生退款，按资源实际使用情况折算为产品原价再退还剩余余额！ 美国洛杉矶CN2_GIACPU内存系统盘流量宽带i...
IntoVPS：按小时计费KVM月费5美元起($0.0075/小时),6个机房可选
IntoVPS是成立于2004年的Hosterion SRL旗下于2009年推出的无管理型VPS主机品牌，商家提供基于OpenStack构建的VPS产品，支持小时计费是他的一大特色，VPS可选数据中心包括美国弗里蒙特、达拉斯、英国伦敦、荷兰和罗马尼亚等6个地区机房。商家VPS主机基于KVM架构，最低每小时0.0075美元起($5/月)。下面列出几款VPS主机配置信息。CPU：1core内存：2GB...
青果网络618：洛杉矶CN2 GIA/东京CN2套餐年付199元起,国内高防独服套餐66折
青果网络怎么样？青果网络隶属于泉州市青果网络科技有限公司，青果网络商家成立于2015年4月1日，拥有工信部颁发的全网IDC/ISP/IP-VPN资质，是国内为数不多具有IDC/ISP双资质的综合型云计算服务商。青果网络是APNIC和CNNIC地址分配联盟成员，泉州市互联网协会会员单位，信誉非常有保障。目前，青果网络商家正式开启了618云特惠活动，针对国内外机房都有相应的优惠。点击进入：青果网络官方...
ykt 178zx com cn为你推荐
-
discuznt请问谁有Discuz!NT的QQ群？印章制作刻章需要什么证件吴晓波频道买粉看吴晓波频道的心得网站运营网络运营主管的主要工作职责是什么？神雕侠侣礼包大全神雕侠侣手游版四重大礼包怎么得到啊？ios7固件下载iphone自动下载IOS7固件版本怎么删除怎么点亮qq空间图标QQ空间的图标怎么点亮保护气球什么气球可以骑？淘宝网页显示不正常淘宝网页不能正常显示ejb开发什么是ejb?