APPLICATION4444mp.com

2015MicrochipTechnologyInc.
DS20005404A-page1DN2450FeaturesHigh-inputimpedanceLow-inputcapacitanceFastswitchingspeedsLowon-resistanceFreefromsecondarybreakdownLowinputandoutputleakagesApplicationsNormally-onswitchesBatteryoperatedsystemsVoltagetocurrentconvertersConstantcurrentsourcesCurrentandvoltagelimitersDescriptionThislowthreshold,depletion-mode,normally-on,tran-sistorutilizesanadvancedverticalDiffusionMetalOxideSemiconductor(DMOS)structureandawellprovensilicon-gatemanufacturingprocess.
Thiscom-binationproducesadevicewiththepower-handlingcapabilitiesofbipolartransistors,plusthehigh-inputimpedanceandpositive-temperaturecoefficientinher-entinMetal-OxideSemiconductor(MOS)devices.
CharacteristicofallMOSstructures,thisdeviceisfreefromthermalrunawayandthermally-inducedsecond-arybreakdown.
VerticalDMOSField-EffectTransistors(FETs)areide-allysuitedtoawiderangeofswitchingandamplifyingapplicationswhereaverylowthresholdvoltage,highbreakdownvoltage,highinputimpedance,lowinputcapacitance,andfastswitchingspeedsaredesired.
N-Channel,Depletion-Mode,VerticalDMOSFETDN2450DS20005404A-page22015MicrochipTechnologyInc.
PackageTypeTO-252(D-PAK)SeeTable2-1forpininformationTO-243AA(SOT-89)GATESOURCEDRAINDRAINGATESOURCEDRAIN2015MicrochipTechnologyInc.
DS20005404A-page3DN24501.
0ELECTRICALCHARACTERISTICSABSOLUTEMAXIMUMRATINGSDrain-to-sourcevoltage.
BVDSXDrain-to-gatevoltage.
BVDGXGate-to-sourcevoltage.
20VOperatingandstoragetemperature.
55°Cto+150°CMaximumjunctiontemperature.
150°C1.
1ELECTRICALSPECIFICATIONSNote1:AllDCparametersare100%testedat25°Cunlessotherwisestated.
Pulsetest:300spulse,2%dutycycle.
2:Specificationisobtainedbycharacterizationandisnot100%tested.
Notice:Stressesabovethoselistedunder"MaximumRatings"maycausepermanentdamagetothedevice.
Thisisastressratingonlyandfunctionaloperationofthedeviceatthoseoranyotherconditionsabovethoseindicatedintheoperationallistingsofthisspecificationisnotimplied.
Exposuretomaximumratingconditionsforextendedperiodsmayaffectdevicereliability.
TABLE1-1:DCANDACCHARACTERISTICSElectricalSpecifications:Unlessotherwisespecified,forallspecificationsTA=TJ=+25°CSymbolParameterMinTypMaxUnitsConditionsDCParameters(Note1,unlessotherwisestated)BVDSXDrain-to-sourcebreakdownvoltage500––VVGS=-5.
0V,ID=100AVGS(OFF)Gate-to-sourceoffvoltage-1.
5–-3.
5VVDS=25V,ID=10AVGS(OFF)ChangeinVGS(OFF)withtemperature––-4.
5mV/°CVDS=25V,ID=10A(Note2)IGSSGatebodyleakage––100nAVGS=±20V,VDS=0VID(OFF)Drain-to-sourceleakagecurrent––1.
0AVDS=BVDSX,VGS=-10V––1.
0mAVDS=0.
8BVDSX,VGS=-10V,TA=125°C(Note2)IDSSSaturateddrain-to-sourcecurrent700––mAVGS=0V,VDS=25VRDS(ON)Staticdrain-to-sourceon-stateresistance–7.
010VGS=0V,ID=300mARDS(ON)ChangeinRDS(ON)withtemperature––1.
1%/°CVGS=0V,ID=300mA(Note2)ACParameters(Note2)GFSForwardtransconductance500––mmhoVDS=10V,ID=300mACISSInputcapacitance–150200pFVGS=-10V,VDS=25V,f=1MHzCOSSCommonsourceoutputcapaci-tance–4055CRSSReversetransfercapacitance–1525td(ON)Turn-ondelaytime––15nsVDD=25V,ID=300mA,RGEN=25,trRisetime––20td(OFF)Turn-offdelaytime––15tfFalltime––15DiodeParametersVSDDiodeforwardvoltagedrop––1.
8VVGS=-5.
0V,ISD=300mA(Note1)trrReverserecoverytime–800–nsVGS=-5.
0V,ISD=300mA(Note2)DN2450DS20005404A-page42015MicrochipTechnologyInc.
2.
0PINDESCRIPTIONThelocationsofthepinsarelistedinPackageType.
TABLE1-2:TYPICALTHERMALRESISTANCEPackageθjaTO-252(D-PAK)81°C/WTO-243AA(SOT-89)133°C/WTABLE1-3:THERMALCHARACTERISTICSPackageID1continuous(mA)1.
IDcontinuousislimitedbymaxratedTjIDpulsed(mA)PowerDissipation@TA=25°C(W)IDR1(mA)IDRM(mA)TO-252(D-PAK)35010002.
522.
MountedonFR4board,25mmx25mmx1.
57mm3501000TO-243AA(SOT-89)2309001.
62230900TABLE2-1:PINDESCRIPTIONPin#TO-252Pin#TO-243AAFunction11GATE33SOURCE2,42,4DRAIN2015MicrochipTechnologyInc.
DS20005404A-page5DN24503.
0APPLICATIONINFORMATIONFigureshowstheswitchingwaveformandtestcircuitforDN2450.
FIGURE3-1:SwitchingWaveformsandTestCircuit90%10%90%90%10%10%PulseGeneratorVDDRLOUTPUTD.
U.
T.
t(ON)td(ON)t(OFF)td(OFF)trINPUTINPUTOUTPUT0VVDDRGEN0V-10VtfProductSummaryBVDSX/BVDGX(V)RDS(ON)(max)()IDSS(min)(mA)50010700DN2450DS20005404A-page62015MicrochipTechnologyInc.
4.
0PACKAGINGINFORMATION4.
1PackageMarkingInformationLegend:XX.
.
.
XProductCodeorCustomer-specificinformationYYearcode(lastdigitofcalendaryear)YYYearcode(last2digitsofcalendaryear)WWWeekcode(weekofJanuary1isweek'01')NNNAlphanumerictraceabilitycodePb-freeJEDECdesignatorforMatteTin(Sn)*ThispackageisPb-free.
ThePb-freeJEDECdesignator()canbefoundontheouterpackagingforthispackage.
Note:IntheeventthefullMicrochippartnumbercannotbemarkedononeline,itwillbecarriedovertothenextline,thuslimitingthenumberofavailablecharactersforproductcodeorcustomer-specificinformation.
Packagemayornotincludethecorporatelogo.
3e3e3-leadTO-243AA*(SOT-89)ExampleXXXYYWWNNNDN4E517343TO-252(D-PAK)ExampleYYWWNNNXXXXXXXXXe315173432450DNe32015MicrochipTechnologyInc.
DS20005404A-page7DN24503-LeadTO-243AA(SOT-89)PackageOutline(N8)SymbolAbb1CDD1EE1ee1HLDimensions(mm)MIN1.
400.
440.
360.
354.
401.
622.
292.
001.
50BSC3.
00BSC3.
940.
73NOMMAX1.
600.
560.
480.
444.
601.
832.
602.
294.
251.
20JEDECRegistrationTO-243,VariationAA,IssueC,July1986.
ThisdimensiondiffersfromtheJEDECdrawingDrawingsnottoscale.
bb1DD1EHE1CA123ee1TopViewSideViewLNote:Forthemostcurrentpackagedrawings,seetheMicrochipPackagingSpecificationatwww.
microchip.
com/packaging.
Note:Forthemostcurrentpackagedrawings,seetheMicrochipPackagingSpecificationatwww.
microchip.
com/packaging.
DN2450DS20005404A-page82015MicrochipTechnologyInc.
Note:Forthemostcurrentpackagedrawings,seetheMicrochipPackagingSpecificationatwww.
microchip.
com/packaging.
2015MicrochipTechnologyInc.
DS20005404A-page9DN2450APPENDIXA:REVISIONHISTORYRevisionA(July2015)UpdatefiletonewformatDN2450DS20005404A-page102015MicrochipTechnologyInc.
PRODUCTIDENTIFICATIONSYSTEMToorderorobtaininformation,e.
g.
,onpricingordelivery,refertothefactoryorthelistedsalesoffice.
Device:DN2450=N-Channel,Depletion-Mode,verticalDMOSFETPackage:K4=TO-252(D-PAK)N8=TO-243AA(SOT-89)EnvironmentalG=Lead(Pb)-free/ROHS-compliantpackageMediaType:(blank)=2000/ReelExamples:a)DN2450K4-GTO-252package,2000/reelb)DN2450N8-GTO-243AApackage,2000/reelPARTNO.
XDeviceXEnvironmentalXXPackageOptionsMedia--Type2015MicrochipTechnologyInc.
DS20005404A-page11DN2450Informationcontainedinthispublicationregardingdeviceapplicationsandthelikeisprovidedonlyforyourconvenienceandmaybesupersededbyupdates.
Itisyourresponsibilitytoensurethatyourapplicationmeetswithyourspecifications.
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Microchipdisclaimsallliabilityarisingfromthisinformationanditsuse.
UseofMicrochipdevicesinlifesupportand/orsafetyapplicationsisentirelyatthebuyer'srisk,andthebuyeragreestodefend,indemnifyandholdharmlessMicrochipfromanyandalldamages,claims,suits,orexpensesresultingfromsuchuse.
Nolicensesareconveyed,implicitlyorotherwise,underanyMicrochipintellectualpropertyrightsunlessotherwisestated.
TrademarksTheMicrochipnameandlogo,theMicrochiplogo,dsPIC,FlashFlex,flexPWR,JukeBlox,KEELOQ,KEELOQlogo,Kleer,LANCheck,MediaLB,MOST,MOSTlogo,MPLAB,OptoLyzer,PIC,PICSTART,PIC32logo,RightTouch,SpyNIC,SST,SSTLogo,SuperFlashandUNI/OareregisteredtrademarksofMicrochipTechnologyIncorporatedintheU.
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Analog-for-the-DigitalAge,BodyCom,chipKIT,chipKITlogo,CodeGuard,dsPICDEM,dsPICDEM.
net,ECAN,In-CircuitSerialProgramming,ICSP,Inter-ChipConnectivity,KleerNet,KleerNetlogo,MiWi,MPASM,MPF,MPLABCertifiedlogo,MPLIB,MPLINK,MultiTRAK,NetDetach,OmniscientCodeGeneration,PICDEM,PICDEM.
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SiliconStorageTechnologyisaregisteredtrademarkofMicrochipTechnologyInc.
inothercountries.
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KG,asubsidiaryofMicrochipTechnologyInc.
,inothercountries.
Allothertrademarksmentionedhereinarepropertyoftheirrespectivecompanies.
2015,MicrochipTechnologyIncorporated,PrintedintheU.
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,AllRightsReserved.
ISBN:978-1-63277-585-6NotethefollowingdetailsofthecodeprotectionfeatureonMicrochipdevices:MicrochipproductsmeetthespecificationcontainedintheirparticularMicrochipDataSheet.
Microchipbelievesthatitsfamilyofproductsisoneofthemostsecurefamiliesofitskindonthemarkettoday,whenusedintheintendedmannerandundernormalconditions.
Therearedishonestandpossiblyillegalmethodsusedtobreachthecodeprotectionfeature.
Allofthesemethods,toourknowledge,requireusingtheMicrochipproductsinamanneroutsidetheoperatingspecificationscontainedinMicrochip'sDataSheets.
Mostlikely,thepersondoingsoisengagedintheftofintellectualproperty.
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NeitherMicrochipnoranyothersemiconductormanufacturercanguaranteethesecurityoftheircode.
Codeprotectiondoesnotmeanthatweareguaranteeingtheproductas"unbreakable.
"Codeprotectionisconstantlyevolving.
WeatMicrochiparecommittedtocontinuouslyimprovingthecodeprotectionfeaturesofourproducts.
AttemptstobreakMicrochip'scodeprotectionfeaturemaybeaviolationoftheDigitalMillenniumCopyrightAct.
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MicrochipreceivedISO/TS-16949:2009certificationforitsworldwideheadquarters,designandwaferfabricationfacilitiesinChandlerandTempe,Arizona;Gresham,OregonanddesigncentersinCaliforniaandIndia.
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QUALITYMANAGEMENTSYSTEMCERTIFIEDBYDNV==ISO/TS16949==DS20005404A-page122015MicrochipTechnologyInc.
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