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APT75DL120HJAPT75DL120HJ–Rev1Otober,2012www.
microsemi.
com1-4AbsolutemaximumratingsSymbolParameterMaxratingsUnitVRMaximumDCreverseVoltageVRRMMaximumPeakRepetitiveReverseVoltage1200VIF(AV)MaximumAverageForwardCurrentDutycycle=50%TC=80°C75IFRMMaximumrepetitiveforwardcurrentlimitedbyTJmax8.
3msTJ=45°C150ATheseDevicesaresensitivetoElectrostaticDischarge.
ProperHandlingProceduresShouldBeFollowed.
SeeapplicationnoteAPT0502onwww.
microsemi.
comVRRM=1200VIF=75A@Tc=80°CApplicationSwitchmodepowersuppliesrectifierInductionheatingWeldingequipmentHighspeedrectifiersFeaturesUltrafastrecoverytimesSoftrecoverycharacteristicsHighblockingvoltageHighcurrentLowleakagecurrentVerylowstrayinductanceHighlevelofintegrationISOTOPPackage(SOT-227)BenefitsOutstandingperformanceathighfrequencyoperationLowlossesLownoiseswitchingDirectmountingtoheatsink(isolatedpackage)LowjunctiontocasethermalresistanceRoHSCompliantISOTOPFastDiodeFullBridgePowerModule~~-+APT75DL120HJAPT75DL120HJ–Rev1Otober,2012www.
microsemi.
com2-4Allratings@Tj=25°CunlessotherwisespecifiedElectricalCharacteristicsSymbolCharacteristicTestConditionsMinTypMaxUnitTj=25°C1.
62.
1VFDiodeForwardVoltageIF=75ATj=125°C1.
6VTj=25°C250IRMMaximumReverseLeakageCurrentVR=1200VTj=125°C500ADynamicCharacteristicsSymbolCharacteristicTestConditionsMinTypMaxUnitTj=25°C170trrReverseRecoveryTimeTj=125°C280nsTj=25°C7QrrReverseRecoveryChargeTj=125°C14CTj=25°C3ErrReverseRecoveryEnergyIF=75AVR=600Vdi/dt=2000A/sTj=125°C5.
5mJThermalandpackagecharacteristicsSymbolCharacteristicMinTypMaxUnitRthJCJunctiontoCaseThermalresistance0.
58RthJAJunctiontoAmbient20°C/WVISOLRMSIsolationVoltage,anyterminaltocaset=1min,50/60Hz2500VTJ,TSTGStorageTemperatureRange-55150TLMaxLeadTempforSoldering:0.
063"fromcasefor10sec300°CTorqueMountingtorque(Mounting=8-32or4mmMachineandterminals=4mmMachine)1.
5N.
mWtPackageWeight29.
2gSOT-227(ISOTOP)PackageOutline31.
5(1.
240)31.
7(1.
248)DimensionsinMillimetersand(Inches)7.
8(.
307)8.
2(.
322)30.
1(1.
185)30.
3(1.
193)38.
0(1.
496)38.
2(1.
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9(.
587)15.
1(.
594)11.
8(.
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2(.
480)8.
9(.
350)9.
6(.
378)HexNutM4(4places)0.
75(.
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85(.
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6(.
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8(.
504)25.
2(0.
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4(1.
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95(.
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14(.
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0(.
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0(.
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2(.
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1(.
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8(.
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9(.
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3(.
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6(.
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57(.
180)APT75DL120HJAPT75DL120HJ–Rev1Otober,2012www.
microsemi.
com3-4TypicalPerformanceCurveEnergylossesvsCollectorCurrent02.
557.
50255075100125150IF(A)Err(mJ)VCE=600VVGE=-15VTJ=125°CForwardCharacteristicofdiodeTJ=25°CTJ=125°CTJ=125°C025507510012515000.
40.
81.
21.
622.
4VF(V)IF(A)maximumEffectiveTransientThermalImpedance,JunctiontoCasevsPulseDuration0.
90.
70.
50.
30.
10.
05SinglePulse00.
10.
20.
30.
40.
50.
60.
000010.
00010.
0010.
010.
1110rectangularPulseDuration(Seconds)ThermalImpedance(°C/W)ISOTOPisaregisteredtrademarkofSTMicroelectronicsNVAPT75DL120HJAPT75DL120HJ–Rev1Otober,2012www.
microsemi.
com4-4DISCLAIMERTheinformationcontainedinthedocument(unlessitispubliclyavailableontheWebwithoutaccessrestrictions)isPROPRIETARYANDCONFIDENTIALinformationofMicrosemiandcannotbecopied,published,uploaded,posted,transmitted,distributedordisclosedorusedwithouttheexpressdulysignedwrittenconsentofMicrosemi.
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