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AnIMPORTANTNOTICEattheendofthisdatasheetaddressesavailability,warranty,changes,useinsafety-criticalapplications,intellectualpropertymattersandotherimportantdisclaimers.
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EnglishDataSheet:SLIS180TLC6C5912ZHCSF22–MAY2016TLC6C591212通通道道移移位位寄寄存存器器LED驱驱动动器器11特特性性13V至5.
5V宽VCC范围40V最大额定输出12路功率双扩散金属氧化物半导体(DMOS)晶体管输出:50mA持续电流(VCC=5V)或者200mA脉宽调制(PWM)电流(单脉冲持续时间短于1ms且平均电流低于50mAr)热关断保护针对多级的增强型级联所有寄存器由单一输入清零低功耗缓慢开关时间(t和tf),非常有助于减少电磁干扰(EMI)20引脚薄型小外形尺寸(TSSOP)-PW封装2应应用用电器显示面板电梯显示面板PLC功能指示器七段显示器3说说明明TLC6C5912是一款单片、中等电压、低电流功率12位移位寄存器,专为负载功率要求相对适中的系统(例如LED)而设计.
此器件包含一个12位串入、并出移位寄存器,此寄存器为一个12位D类存储寄存器提供数据.
移位和存储寄存器之间的数据传输分别在移位寄存器时钟(SRCK)和寄存器时钟(RCK)的上升边沿上发生.
当移位寄存器清零(CLR)为高电平时,存储寄存器将数据传输到输出缓冲器.
一个CLR上的低电平将器件中的所有寄存器清零.
将输出使能(G)保持为高电平将把输出缓冲器中的所有数据保存为低电平,并且所有漏极输出关闭.
保持G为低电平将使得来自存储寄存器中的数据对于输出缓冲器不可见.
该器件包含一个12位串入并出移位寄存器.
该寄存器为一个12位D类存储寄存器提供数据.
移位寄存器和存储寄存器各自具备独立时钟.
输出为低侧、漏极开路DMOS晶体管输出:额定输出为40V及50mA持续灌电流或者200mAPWM电流(VCC=5V时,单脉冲持续时间短于1ms且平均电流低于50mA).
该器件内置热关断保护,在人体模型和200V机器模型测试中可提供高达2000V的静电放电(ESD)保护.
TLC6C5912的额定工作环境温度范围为-40°C至105°C.
器器件件信信息息(1)器器件件型型号号封封装装封封装装尺尺寸寸((标标称称值值))TLC6C5912薄型小外形尺寸封装(TSSOP)(20)6.
50mmx4.
40mm(1)要了解所有可用封装,请见数据表末尾的可订购产品附录.
典典型型应应用用电电路路原原理理图图2TLC6C5912ZHCSF22–MAY2016www.
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cnCopyright2016,TexasInstrumentsIncorporated目目录录1特特性性.
12应应用用.
13说说明明.
14修修订订历历史史记记录录25PinConfigurationandFunctions.
36Specifications.
46.
1AbsoluteMaximumRatings46.
2ESDRatings.
46.
3RecommendedOperatingConditions.
46.
4ThermalInformation.
56.
5ElectricalCharacteristics.
56.
6SwitchingCharacteristics.
56.
7TypicalCharacteristics.
77ParameterMeasurementInformation98DetailedDescription108.
1Overview108.
2FunctionalBlockDiagram108.
3FeatureDescription.
108.
4DeviceFunctionalModes.
119ApplicationandImplementation129.
1ApplicationInformation.
129.
2TypicalApplication1210PowerSupplyRecommendations1511Layout.
1511.
1LayoutGuidelines1511.
2LayoutExample1512器器件件和和文文档档支支持持1612.
1社区资源.
1612.
2商标.
1612.
3静电放电警告.
1612.
4Glossary.
1613机机械械、、封封装装和和可可订订购购信信息息.
164修修订订历历史史记记录录注:之前版本的页码可能与当前版本有所不同.
日日期期修修订订版版本本注注2016年5月*最初发布版本3TLC6C5912www.
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cnZHCSF22–MAY2016Copyright2016,TexasInstrumentsIncorporated5PinConfigurationandFunctionsPWPackage20-PinTSSOPTopViewPinFunctionsPINI/ODESCRIPTIONNAMENO.
CLR9IShiftregisterclear,active-low:CLRisthesignalusedtoclearalltheregisters.
ThestorageregistertransfersdatatotheoutputbufferwhenshiftregisterclearCLRishigh.
DrivingCLRislowclearsalltheregistersinthedevice.
DRAIN03OOpen-drainoutput:DRAIN0toDRAIN11aretheLEDcurrent-sinkchannels.
ThesepinsconnecttotheLEDcathodes,andtheycansurviveupto40-VLEDsupplyvoltage.
DRAIN14ODRAIN25ODRAIN36ODRAIN47ODRAIN58ODRAIN613ODRAIN714ODRAIN815ODRAIN916ODRAIN1017ODRAIN1118OG10IOutputenable,active-low:GistheLEDchannelenableanddisableinputpin.
HavingGlowenablesalldrainchannelsaccordingtotheoutput-latchregistercontent.
Whenhigh,allchannelsareoff.
GND20—Powerground:GNDisthegroundreferencepinforthedevice.
ThispinmustconnecttothegroundplaneonthePCB.
RCK12IRegisterclock:RCKisthestorageregisterclock.
ThedataineachshiftregisterstagetransferstothestorageregisterattherisingedgeofRCK.
DatainthestorageregisterappearsattheoutputwhenevertheoutputenableGinputsignalishigh.
SERIN2ISerial-datainput:SERINistheserialdatainput.
DataonSERINloadsintotheinternalregisteroneachrisingedgeofSRCK.
4TLC6C5912ZHCSF22–MAY2016www.
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cnCopyright2016,TexasInstrumentsIncorporatedPinFunctions(continued)PINI/ODESCRIPTIONNAMENO.
SEROUT11OSerial-dataoutput:SEROUTistheserialdataoutputofthe12bitserialshiftregister.
Thepurposeofthispinistocascadeseveraldevicesontheserialbus.
ByconnectingtheSEROUTpintotheSERINinputofthenextdeviceontheserialbustocascade,thedatatransferstothenextdeviceonthefallingedgeofSRCK.
Thiscanimprovethecascadeapplicationreliability,asitcanavoidtheissuethattheseconddevicereceivesSRCKanddatainputatthesamerisingedgeofSRCK.
SRCK19IShift-registerclock:SRCKistheserialclockinput.
OneachrisingSRCKedge,datatransfersfromSERINtotheinternalserialshiftregisters.
VCC1IPowersupply:VCCisthepowersupplypinvoltageforthedevice.
TIrecommendsaddinga0.
1μFceramiccapacitorclosetothepin.
(1)StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.
Thesearestressratingsonly,whichdonotimplyfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunderRecommendedOperatingConditions.
Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.
6Specifications6.
1AbsoluteMaximumRatingsoveroperatingfree-airtemperaturerange(unlessotherwisenoted)(1)MINMAXUNITVCCLogicsupplyvoltage8VVILogicinput-voltage–0.
38VVDSPowerDMOSdrain-to-sourcevoltage42VContinuoustotaldissipationSeeThermalInformationOperatingambienttemperature(Top)105°CTJOperatingjunctiontemperature–40125°CTstgStoragetemperature–55165°C(1)JEDECdocumentJEP155statesthat500-VHBMallowssafemanufacturingwithastandardESDcontrolprocess.
(2)JEDECdocumentJEP157statesthat250-VCDMallowssafemanufacturingwithastandardESDcontrolprocess.
6.
2ESDRatingsVALUEUNITV(ESD)ElectrostaticdischargeHuman-bodymodel(HBM),perANSI/ESDA/JEDECJS-001(1)±2000VCharged-devicemodel(CDM),perJEDECspecificationJESD22-C101(2)±7506.
3RecommendedOperatingConditionsMINMAXUNITVCCSupplyvoltage35.
5VVIHHigh-levelinputvoltage2.
4VVILLow-levelinputvoltage0.
7VtsuSetuptime,SERINhighbeforeSRCK↑15nsthHoldtime,SERINhighafterSRCK↑15nstwPulseduration40nsTAOperatingambienttemperature–40105°C5TLC6C5912www.
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cnZHCSF22–MAY2016Copyright2016,TexasInstrumentsIncorporated(1)Formoreinformationabouttraditionalandnewthermalmetrics,seetheSemiconductorandICPackageThermalMetricsapplicationreport,SPRA953.
6.
4ThermalInformationTHERMALMETRIC(1)TLC6C5912UNITPW(TSSOP)20PINSRθJAJunction-to-ambientthermalresistance114.
8°C/WRθJC(top)Junction-to-case(top)thermalresistance44.
1°C/WRθJBJunction-to-boardthermalresistance61.
3°C/WψJTJunction-to-topcharacterizationparameter4.
7°C/WψJBJunction-to-boardcharacterizationparameter60.
8°C/W6.
5ElectricalCharacteristicsVCC=5V,TA=25°C(unlessotherwisenoted)PARAMETERTESTCONDITIONSMINTYPMAXUNITDRAIN0toDRAIN11,drain-to-sourcevoltage40VVOHHigh-leveloutputvoltage,SEROUTIOH=–20μAVCC=5V4.
94.
99VIOH=–4mA4.
54.
69VOLLow-leveloutputvoltage,SEROUTIOH=20μAVCC=5V0.
0010.
01VIOH=4mA0.
250.
4IIHHigh-levelinputcurrentVCC=5V,VI=VCC0.
2μAIILLow-levelinputcurrentVCC=5V,VI=0–0.
2μAICCLogicsupplycurrentVCC=5V,NoclocksignalAlloutputsoff0.
11μAAlloutputson130170ICC(FRQ)LogicsupplycurrentatfrequencyfSRCK=5MHz,CL=30pF,alloutputson300AIDSXOff-statedraincurrentVDS=30V,VCC=5V0.
1μAVDS=30V,TC=125°C,VCC=5V0.
150.
3rDS(on)Staticdrain-sourceon-stateresistanceID=20mA,VCC=5V,TA=25°C,singlechannelON67.
48.
6ΩID=20mA,VCC=5V,TA=25°C,allchannelsON6.
78.
99.
6ID=20mA,VCC=3.
3V,TA=25°C,singlechannelON7.
99.
311.
2ID=20mA,VCC=3.
3V,TA=25°C,allchannelsON8.
710.
612.
3ID=20mA,VCC=5V,TA=105°C,singlechannelON9.
111.
212.
9ID=20mA,VCC=5V,TA=105°C,allchannelsON10.
31314.
5ID=20mA,VCC=3.
3V,TA=105°C,singlechannelON11.
613.
716.
4ID=20mA,VCC=3.
3V,TA=105°C,allchannelsON12.
815.
618.
2TSHUTDOWNThermalshutdowntrippoint150175200°CtHYSHysteresis15°C6.
6SwitchingCharacteristicsVCC=5V,TA=25°CPARAMETERTESTCONDITIONSMINTYPMAXUNITtPLHPropagationdelaytime,low-to-high-leveloutputfromGCL=30pF,ID=48mA210nstPHLPropagationdelaytime,high-to-low-leveloutputfromG75nstrRisetime,drainoutput250nstfFalltime,drainoutput200nstpdPropagationdelaytime,SRCK↓toSEROUTCL=30pF,ID=48mA35nstorSEROUTrisetime(10%to90%)CL=30pF20nstofSEROUTfalltime(90%to10%)CL=30pF20ns6TLC6C5912ZHCSF22–MAY2016www.
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cnCopyright2016,TexasInstrumentsIncorporatedSwitchingCharacteristics(continued)VCC=5V,TA=25°CPARAMETERTESTCONDITIONSMINTYPMAXUNITf(SRCK)SerialclockfrequencyCL=30pF,ID=20mA10MHztSRCK_WHSRCKpulseduration,high30nstSRCK_WLSRCKpulseduration,low30nsFigure1.
SERINtoSEROUTWaveformFigure1showstheSERINtoSEROUTwaveform.
Theoutputsignalappearsonthefallingedgeoftheshiftregisterclock(SRCK)becausethereisaphaseinverteratSEROUT(seeFigure2).
Asaresult,ittakessevenandahalfperiodsofSRCKfordatatotransferfromSERINtoSEROUT.
Figure2.
SwitchingTimesandVoltageWaveformsFigure2showstheswitchingtimesandvoltagewaveforms.
TestsforalltheseparameterstookplaceusingthetestcircuitshowninFigure12.
7TLC6C5912www.
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cnZHCSF22–MAY2016Copyright2016,TexasInstrumentsIncorporated6.
7TypicalCharacteristicsConditionsforFigure5andFigure6:Singlechannelon;conditionsforFigure7,Figure8,andFigure9:Allchannelson.
VCC=5VFigure3.
SupplyCurrentvsFrequencyVCCFigure4.
SupplyCurrentvsSupplyVoltageVCC=5VFigure5.
Drain-to-SourceOn-StateResistancevsDrainCurrent(SingleChannelOn)VCC=3.
3VFigure6.
Drain-to-SourceOn-StateResistancevsDrainCurrent(SingleChannelOn)VCC=5VFigure7.
Drain-to-SourceOn-StateResistancevsDrainCurrent(AllChannelsOn)VCC=3.
3VFigure8.
Drain-to-SourceOn-StateResistancevsDrainCurrent(AllChannelsOn)8TLC6C5912ZHCSF22–MAY2016www.
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cnCopyright2016,TexasInstrumentsIncorporatedTypicalCharacteristics(continued)ConditionsforFigure5andFigure6:Singlechannelon;conditionsforFigure7,Figure8,andFigure9:Allchannelson.
I(ds)=20mAFigure9.
Drain-to-SourceOn-StateResistancevsSupplyVoltageFigure10.
SwitchingTimevsAmbientTemperature9TLC6C5912www.
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cnZHCSF22–MAY2016Copyright2016,TexasInstrumentsIncorporated7ParameterMeasurementInformationA.
CLincludesprobeandjigcapacitance.
Figure11.
Resistive-LoadTestCircuitFigure12.
VoltageWaveformsFigure11andFigure12showtheresistive-loadtestcircuitandvoltagewaveforms.
OnecanseefromFigure12thatwithGheldlowandCLRheldhigh,thestatusofeachdrainchangesontherisingedgeoftheregisterclock,indicatingthetransferofdatatotheoutputbuffersatthattime.
10TLC6C5912ZHCSF22–MAY2016www.
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cnCopyright2016,TexasInstrumentsIncorporated8DetailedDescription8.
1OverviewTheTLC6C5912deviceisamonolithic,medium-voltage,lowcurrent12-bitshiftregisterdesignedtodriverelativelymoderateloadpowersuchLEDs.
Thedevicecontainsa12-bitserial-in,parallel-outshiftregisterthatfeedsa12-bitD-typestorageregister.
Thermalshutdownprotectionisalsobuilt-intothedevice.
8.
2FunctionalBlockDiagram8.
3FeatureDescription8.
3.
1ThermalShutdownThedeviceimplementsaninternalthermalshutdowntoprotectitselfifthejunctiontemperatureexceeds175°C(typical).
Thethermalshutdownforcesthedevicetohaveanopenstatewhenthejunctiontemperatureexceedsthethermaltripthreshold.
Oncethejunctiontemperaturedecreasestolessthan160°C(typical),thedevicebeginstooperateagain.
11TLC6C5912www.
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cnZHCSF22–MAY2016Copyright2016,TexasInstrumentsIncorporatedFeatureDescription(continued)8.
3.
2Serial-InInterfaceTheTLC6C598devicecontainsan8-bitserial-in,paralleloutshiftregisterthatfeedsan8-bitD-typestorageregister.
Datatransferthroughboththeshiftandstorageregistersontherisingedgeoftheshiftregisterclock(SRCK)andtheregisterclock(RCK),respectively.
Thestoragetransfersdatatotheoutputbufferwhenshiftregisterclear(CLR)ishigh.
8.
3.
3ClearRegisterAlogiclowonCLRclearsallregistersinthedevice.
TIsuggestsclearingthedeviceduringpoweruporinitialization.
8.
3.
4CascadeThroughSEROUTByconnectingtheSEROUTpintotheSERINinputofthenextdeviceontheserialbustocascade,thedatatransferstothenextdeviceonthefallingedgeofSRCK.
Thiscanimprovethecascadeapplicationreliability,asitcanavoidthattheseconddevicereceivesSRCKanddatainputatthesamerisingedgeofSRCK.
8.
3.
5OutputControlHoldingtheoutputenable(G)highholdsalldataintheoutputbufferslow,andalldrainoutputsareoff.
HoldingGlowmakesdatafromthestorageregistertransparenttotheoutputbuffers.
Whendataintheoutputbuffersislow,theDMOStransistoroutputsareoff.
Whendataishigh,theDMOStransistoroutputsarecapableofsink-current.
ThispinalsobeusedforglobalPWMdimming.
8.
4DeviceFunctionalModes8.
4.
1OperationWithVCC<3VThisdeviceworksnormallyduring3V≤VCC≤5.
5V,whenoperationvoltageislowerthan3V.
Thebehaviorofdevicecannotbeensured,includingcommunicationinterfaceandcurrentcapability.
8.
4.
2OperationWith5.
5V≤VCC≤8VThedeviceworksnormallyduringthisvoltagerange,butreliabilityissuesmayoccurswhilethedeviceworksforalongtimeinthisvoltagerange.
12TLC6C5912ZHCSF22–MAY2016www.
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cnCopyright2016,TexasInstrumentsIncorporated9ApplicationandImplementationNOTEInformationinthefollowingapplicationssectionsisnotpartoftheTIcomponentspecification,andTIdoesnotwarrantitsaccuracyorcompleteness.
TI'scustomersareresponsiblefordeterminingsuitabilityofcomponentsfortheirpurposes.
Customersshouldvalidateandtesttheirdesignimplementationtoconfirmsystemfunctionality.
9.
1ApplicationInformationTheTLC6C5912deviceisaserial-in,parallel-out,powerlogic8-bitshiftregisterwithlow-sideopen-drainDMOSoutputratingof40Vand50-mAcontinuoussink-currentcapabilitieswhenVCC=5V.
Thedeviceisdesignedtodriveresistiveloadsandisparticularlywell-suitedasaninterfacebetweenamicrocontrollerandLEDsorlamps.
Thedevicealsoprovidesupto2000VofESDprotectionwhentestedusingthehumanbodymodeland200Vwhenusingthemachinemodel.
9.
2TypicalApplicationFigure13showsatypicalcascadeapplicationcircuitwithtwoTLC6C5912chipsconfiguredtocascadetopology.
TheMCUgeneratesalltheinputsignals.
13TLC6C5912www.
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cnZHCSF22–MAY2016Copyright2016,TexasInstrumentsIncorporatedTypicalApplication(continued)Figure13.
TypicalApplicationCircuit9.
2.
1DesignRequirementsTable1liststheparametersforthisdesignexample.
Table1.
DesignParametersDESIGNPARAMETEREXAMPLEVALUEVbattery9Vto40VVCC_13.
3VI(D0),I(D1),I(D2),I(D3),I(D4),I(D5),I(D6),I(D7),I(D8),I(D9),I(D10),I(D11)30mAVCC_25VI(D12),I(D13),I(D14),I(D15),I(D16),I(D17),I(D18),I(D19),I(D20),I(D21),I(D122),I(D23)50mA14TLC6C5912ZHCSF22–MAY2016www.
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cnCopyright2016,TexasInstrumentsIncorporated9.
2.
2DetailedDesignProcedureTobeginthedesignprocess,thedesignermustdecideonafewparameters:Vsupply:LEDsupplyvoltageVDx:LEDforwardvoltageI:LEDcurrentAfterdeterminingtheparameters,calculatetheresistorinserieswithLEDusingEquation1.
Rx=(Vsupply–VDx)/I(1)9.
2.
3ApplicationCurveFigure14.
TLC6C5912ApplicationWaveform15TLC6C5912www.
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cnZHCSF22–MAY2016版权2016,TexasInstrumentsIncorporated10PowerSupplyRecommendationsTheTLC6C5912deviceisdesignedtooperatefromaninputvoltagesupplyrangefrom3Vto5.
5V.
Thisinputsupplyshouldbewellregulated.
TIrecommendsplacingtheceramicbypasscapacitorsneartheVCCpin.
11Layout11.
1LayoutGuidelinesTherearenospeciallayoutrequirementforthedigitalsignalpins.
Theonlyrequirementisplacingtheceramicbypasscapacitorsnearthecorrespondingpin.
MaximizethecoppercoverageonthePCBtoincreasethethermalconductivityoftheboard.
Themajorheat-flowpathfromthepackagetotheambientisthroughthecooperonthePCB.
MaximizingthecoppercoverageisextremelyimportantwhenthedesigndoesnotincludeheatsinksattachedtothePCBontheothersideofthepackage.
Addasmanythermalviasaspossibledirectlyunderthepackagegroundpadtooptimizethethermalconductivityoftheboard.
Allthermalviasshouldbeeitherplatedshutorpluggedandcappedonbothsidesoftheboardtopreventsoldervoids.
Toensurereliabilityandperformance,thesoldercoverageshouldbeatleast85%.
11.
2LayoutExampleFigure15.
LayoutRecommendation16TLC6C5912ZHCSF22–MAY2016www.
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cn版权2016,TexasInstrumentsIncorporated12器器件件和和文文档档支支持持12.
1社社区区资资源源ThefollowinglinksconnecttoTIcommunityresources.
Linkedcontentsareprovided"ASIS"bytherespectivecontributors.
TheydonotconstituteTIspecificationsanddonotnecessarilyreflectTI'sviews;seeTI'sTermsofUse.
TIE2EOnlineCommunityTI'sEngineer-to-Engineer(E2E)Community.
Createdtofostercollaborationamongengineers.
Ate2e.
ti.
com,youcanaskquestions,shareknowledge,exploreideasandhelpsolveproblemswithfellowengineers.
DesignSupportTI'sDesignSupportQuicklyfindhelpfulE2Eforumsalongwithdesignsupporttoolsandcontactinformationfortechnicalsupport.
12.
2商商标标E2EisatrademarkofTexasInstruments.
Allothertrademarksarethepropertyoftheirrespectiveowners.
12.
3静静电电放放电电警警告告这些装置包含有限的内置ESD保护.
存储或装卸时,应将导线一起截短或将装置放置于导电泡棉中,以防止MOS门极遭受静电损伤.
12.
4GlossarySLYZ022—TIGlossary.
Thisglossarylistsandexplainsterms,acronyms,anddefinitions.
13机机械械、、封封装装和和可可订订购购信信息息以下页中包括机械、封装和可订购信息.
这些信息是针对指定器件提供的最新数据.
本数据随时可能发生变更并且不对本文档进行修订,恕不另行通知.
要获得这份数据表的浏览器版本,请查阅左侧的导航窗格.
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客户声明并同意,他们具备制定与实施安全措施所需的全部专业技术和知识,可预见故障的危险后果、监测故障及其后果、降低有可能造成人身伤害的故障的发生机率并采取适当的补救措施.
客户将全额赔偿因在此类安全关键应用中使用任何TI组件而对TI及其代理造成的任何损失.
在某些场合中,为了推进安全相关应用有可能对TI组件进行特别的促销.
TI的目标是利用此类组件帮助客户设计和创立其特有的可满足适用的功能安全性标准和要求的终端产品解决方案.
尽管如此,此类组件仍然服从这些条款.
TI组件未获得用于FDAClassIII(或类似的生命攸关医疗设备)的授权许可,除非各方授权官员已经达成了专门管控此类使用的特别协议.
只有那些TI特别注明属于军用等级或"增强型塑料"的TI组件才是设计或专门用于军事/航空应用或环境的.
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(2)RoHS:TIdefines"RoHS"tomeansemiconductorproductsthatarecompliantwiththecurrentEURoHSrequirementsforall10RoHSsubstances,includingtherequirementthatRoHSsubstancedonotexceed0.
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TImayreferencethesetypesofproductsas"Pb-Free".
RoHSExempt:TIdefines"RoHSExempt"tomeanproductsthatcontainleadbutarecompliantwithEURoHSpursuanttoaspecificEURoHSexemption.
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(3)MSL,PeakTemp.
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IMPORTANTNOTICE邮寄地址:上海市浦东新区世纪大道1568号中建大厦32楼,邮政编码:200122Copyright2020德州仪器半导体技术(上海)有限公司