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BF999Nov-08-20021SiliconN-ChannelMOSFETTriodeForhigh-frequencystagesupto300MHzpreferablyinFMapplications123VPS05161ESD:Electrostaticdischargesensitivedevice,observehandlingprecaution!
TypeMarkingPinConfigurationPackageBF999LBs1=G2=D3=SSOT23MaximumRatingsParameterSymbolValueUnitDrain-sourcevoltageVDS20VDraincurrentID30mAGate-sourcepeakcurrentIGSM10mATotalpowerdissipation,TS76°CPtot200mWStoragetemperatureTstg-55.
.
.
150°CChanneltemperatureTch150ThermalResistanceChannel-solderingpoint1)Rthchs370K/W1ForcalculationofRthJApleaserefertoApplicationNoteThermalResistanceBF999Nov-08-20022ElectricalCharacteristicsatTA=25°C,unlessotherwisespecified.
ParameterSymbolValuesUnitmin.
typ.
max.
DCcharacteristicsDrain-sourcebreakdownvoltageID=10A,-VGS=4VV(BR)DS20--VGate-sourcebreakdownvoltageIGS=10mA,VDS=0V(BR)GSS6.
5-12Gate-sourceleakagecurrentVGS=5V,VDS=0IGSS--50nADraincurrentVDS=10V,VGS=0IDSS5-18mAGate-sourcepinch-offvoltageVDS=10V,ID=20A-VGS(p)--2.
5VACcharacteristicsForwardtranconductanceVDS=10V,ID=10mAgfs1416-mSGateinputcapacitanceVDS=10V,ID=10mA,f=1MHzCgss-2.
5-pFReversetranfercapacitanceVDS=10V,ID=10mA,f=1MHzCdg-25-fFOutputcapacitanceVDS=10V,ID=10mA,f=1MHzCdss-1-pFPowergainVDS=10V,ID=10mA,f=200MHzGp-25-dBNoisefigureVDS=10V,ID=10mA,f=200MHzF-1-BF999Nov-08-20023OutputcharacteristicsID=f(VDS)00EHT07308BF999ΙDDSV20VGS=5101520mA2551015VV0.
6V0.
4V0.
2V0V-0.
2V-0.
4VV-0.
60.
8TotalpowerdissipationPtot=f(TS)020406080100120°C150TS050100150200mW300PtotGatetransconductancegfs=f(VGS)-10EHT07309BF999gfsGSV012V351015mS20DraincurrentID=f(VGS)-10EHT07310BF999GSVΙD102030mA01V2BF999Nov-08-20024GateinputcapacitanceCgss=f(VGS)-20EHT07311BF999CgssGSV-101V12pF3OutputcapacitanceCdss=f(VDS)00.
0EHT07312BF999CdssDSV51015V0.
51.
01.
5pF2.
0ReversetransfercapacitanceCdg=f(VDS)00EHT07313BF999CdgDSV51015V50100150fF200Gateinputadmittancey11s(common-source)00EHT07314BF999b11sg11s50100200300400500600700=800f123mS424681012mS14MHzMHzMHzMHzMHzMHzMHzMHzMHzBF999Nov-08-20025Gateforwardtransferadmittancey21s(common-source)4-15EHT07315BF999b21sg21s=800f68101214mS16-10-5mS070060050040030020010050MHzMHzMHzMHzMHzMHzMHzMHzMHzOutputadmittancey22s(common-source)00EHT07316BF999b22sg0.
10.
20.
30.
4mS0.
545mS22s50100200300400500600700=800321fMHzMHzMHzMHzMHzMHzMHzMHzMHzTestcircuitforpowergainandnoisefiguref=200MHzEHM07024DrInput6060Output15pF1nF1nFBB515270k270kVDSVtunVtunVG1S270kBB5151nF15pF1nF
TypeMarkingPinConfigurationPackageBF999LBs1=G2=D3=SSOT23MaximumRatingsParameterSymbolValueUnitDrain-sourcevoltageVDS20VDraincurrentID30mAGate-sourcepeakcurrentIGSM10mATotalpowerdissipation,TS76°CPtot200mWStoragetemperatureTstg-55.
.
.
150°CChanneltemperatureTch150ThermalResistanceChannel-solderingpoint1)Rthchs370K/W1ForcalculationofRthJApleaserefertoApplicationNoteThermalResistanceBF999Nov-08-20022ElectricalCharacteristicsatTA=25°C,unlessotherwisespecified.
ParameterSymbolValuesUnitmin.
typ.
max.
DCcharacteristicsDrain-sourcebreakdownvoltageID=10A,-VGS=4VV(BR)DS20--VGate-sourcebreakdownvoltageIGS=10mA,VDS=0V(BR)GSS6.
5-12Gate-sourceleakagecurrentVGS=5V,VDS=0IGSS--50nADraincurrentVDS=10V,VGS=0IDSS5-18mAGate-sourcepinch-offvoltageVDS=10V,ID=20A-VGS(p)--2.
5VACcharacteristicsForwardtranconductanceVDS=10V,ID=10mAgfs1416-mSGateinputcapacitanceVDS=10V,ID=10mA,f=1MHzCgss-2.
5-pFReversetranfercapacitanceVDS=10V,ID=10mA,f=1MHzCdg-25-fFOutputcapacitanceVDS=10V,ID=10mA,f=1MHzCdss-1-pFPowergainVDS=10V,ID=10mA,f=200MHzGp-25-dBNoisefigureVDS=10V,ID=10mA,f=200MHzF-1-BF999Nov-08-20023OutputcharacteristicsID=f(VDS)00EHT07308BF999ΙDDSV20VGS=5101520mA2551015VV0.
6V0.
4V0.
2V0V-0.
2V-0.
4VV-0.
60.
8TotalpowerdissipationPtot=f(TS)020406080100120°C150TS050100150200mW300PtotGatetransconductancegfs=f(VGS)-10EHT07309BF999gfsGSV012V351015mS20DraincurrentID=f(VGS)-10EHT07310BF999GSVΙD102030mA01V2BF999Nov-08-20024GateinputcapacitanceCgss=f(VGS)-20EHT07311BF999CgssGSV-101V12pF3OutputcapacitanceCdss=f(VDS)00.
0EHT07312BF999CdssDSV51015V0.
51.
01.
5pF2.
0ReversetransfercapacitanceCdg=f(VDS)00EHT07313BF999CdgDSV51015V50100150fF200Gateinputadmittancey11s(common-source)00EHT07314BF999b11sg11s50100200300400500600700=800f123mS424681012mS14MHzMHzMHzMHzMHzMHzMHzMHzMHzBF999Nov-08-20025Gateforwardtransferadmittancey21s(common-source)4-15EHT07315BF999b21sg21s=800f68101214mS16-10-5mS070060050040030020010050MHzMHzMHzMHzMHzMHzMHzMHzMHzOutputadmittancey22s(common-source)00EHT07316BF999b22sg0.
10.
20.
30.
4mS0.
545mS22s50100200300400500600700=800321fMHzMHzMHzMHzMHzMHzMHzMHzMHzTestcircuitforpowergainandnoisefiguref=200MHzEHM07024DrInput6060Output15pF1nF1nFBB515270k270kVDSVtunVtunVG1S270kBB5151nF15pF1nF
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