TEXTwww.8x5x.com

CSD17322Q5Awww.
ti.
comSLPS330–JUNE201130V,N-ChannelNexFETPowerMOSFETsCheckforSamples:CSD17322Q5A1FEATURESPRODUCTSUMMARY2Optimizedfor5VGateDriveVDSDraintoSourceVoltage30VUltralowQgandQgdQgGateChargeTotal(4.
5V)3.
6nCLowThermalResistanceQgdGateChargeGatetoDrain1.
1nCAvalancheRatedVGS=4.
5V10mRDS(on)DraintoSourceOnResistancePbFreeTerminalPlatingVGS=8V7.
3mRoHSCompliantVGS(th)ThresholdVoltage1.
6VHalogenFreeORDERINGINFORMATIONSON5-mm*6-mmPlasticPackageDevicePackageMediaQtyShipAPPLICATIONSSON5-mm*6-mm13-InchTapeandCSD17322Q5A2500PlasticPackageReelReelNotebookPointofLoadPoint-of-LoadSynchronousBuckinABSOLUTEMAXIMUMRATINGSNetworking,TelecomandComputingSystemsTA=25°CunlessotherwisestatedVALUEUNITVDSDraintoSourceVoltage30VDESCRIPTIONVGSGatetoSourceVoltage+10/–10VTheNexFETpowerMOSFEThasbeendesignedContinuousDrainCurrent,TC=25°C87Atominimizelossesinpowerconversionapplications,IDContinuousDrainCurrent(1)16Aandoptimizedfor5Vgatedriveapplications.
IDMPulsedDrainCurrent,TA=25°C(2)104APDPowerDissipation(1)3WFigure1.
TopViewTJ,OperatingJunctionandStorage–55to150°CTSTGTemperatureRangeAvalancheEnergy,singlepulseEAS54mJID=33A,L=0.
1mH,RG=25(1)TypicalRθJA=41°C/Wona1-inch2(6.
45-cm2),2-oz.
(0.
071-mmthick)Cupadona0.
06-inch(1.
52-mm)thickFR4PCB.
(2)Pulseduration≤300μs,dutycycle≤2%RDS(on)vsVGSGATECHARGE1Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
2NexFETisatrademarkofTexasInstruments.
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
Copyright2011,TexasInstrumentsIncorporatedProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.
Productionprocessingdoesnotnecessarilyincludetestingofallparameters.
CSD17322Q5ASLPS330–JUNE2011www.
ti.
comThesedeviceshavelimitedbuilt-inESDprotection.
TheleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoamduringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.
ELECTRICALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERTESTCONDITIONSMINTYPMAXUNITStaticCharacteristicsBVDSSDraintoSourceVoltageVGS=0V,ID=250μA30VIDSSDraintoSourceLeakageCurrentVGS=0V,VDS=24V1μAIGSSGatetoSourceLeakageCurrentVDS=0V,VGS=+10/–10V100nAVGS(th)GatetoSourceThresholdVoltageVDS=VGS,ID=250μA1.
11.
62.
0VVGS=4.
5V,ID=14A1012.
4mRDS(on)DraintoSourceOnResistanceVGS=8V,ID=14A7.
38.
8mgfsTransconductanceVDS=15V,ID=14A37SDynamicCharacteristicsCissInputCapacitance580695pFCossOutputCapacitanceVGS=0V,VDS=15V,f=1MHz390470pFCrssReverseTransferCapacitance3544pFRGSeriesGateResistance4.
7QgGateChargeTotal(4.
5V)3.
64.
3nCQgdGateChargeGatetoDrain1.
1nCVDS=15V,ID=14AQgsGateChargeGatetoSource1.
6nCQg(th)GateChargeatVth0.
9nCQossOutputChargeVDS=13V,VGS=0V8.
6nCtd(on)TurnOnDelayTime6.
7nstrRiseTime12nsVDS=15V,VGS=4.
5V,IDS=14A,RG=2td(off)TurnOffDelayTime10.
5nstfFallTime3.
7nsDiodeCharacteristicsVSDDiodeForwardVoltageISD=14A,VGS=0V0.
851VQrrReverseRecoveryCharge19.
6nCVDD=13V,IF=14A,di/dt=300A/μstrrReverseRecoveryTime17.
8nsTHERMALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERMINTYPMAXUNITRθJCThermalResistanceJunctiontoCase(1)1.
8°C/WRθJAThermalResistanceJunctiontoAmbient(1)(2)51°C/W(1)RθJCisdeterminedwiththedevicemountedona1-inch2(6.
45-cm2),2-oz.
(0.
071-mmthick)Cupadona1.
5-inch*1.
5-inch(3.
81-cm*3.
81-cm),0.
06-inch(1.
52-mm)thickFR4PCB.
RθJCisspecifiedbydesign,whereasRθJAisdeterminedbytheuser'sboarddesign.
(2)DevicemountedonFR4materialwith1-inch2(6.
45-cm2),2-oz.
(0.
071-mmthick)Cu.
2Copyright2011,TexasInstrumentsIncorporatedCSD17322Q5Awww.
ti.
comSLPS330–JUNE2011MaxRθJA=51°C/WMaxRθJA=125°C/Wwhenmountedonwhenmountedona1inch2(6.
45cm2)ofminimumpadareaof2-oz.
(0.
071-mmthick)2-oz.
(0.
071-mmthick)Cu.
Cu.
TYPICALMOSFETCHARACTERISTICS(TA=25°Cunlessotherwisestated)Figure2.
TransientThermalImpedanceCopyright2011,TexasInstrumentsIncorporated3CSD17322Q5ASLPS330–JUNE2011www.
ti.
comTYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure3.
SaturationCharacteristicsFigure4.
TransferCharacteristicsTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure5.
GateChargeFigure6.
CapacitanceTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure7.
ThresholdVoltagevs.
TemperatureFigure8.
On-StateResistancevs.
Gate-to-SourceVoltage4Copyright2011,TexasInstrumentsIncorporatedCSD17322Q5Awww.
ti.
comSLPS330–JUNE2011TYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure9.
NormalizedOn-StateResistancevs.
TemperatureFigure10.
TypicalDiodeForwardVoltageTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure11.
MaximumSafeOperatingAreaFigure12.
SinglePulseUnclampedInductiveSwitchingTEXTADDEDFORSPACINGFigure13.
MaximumDrainCurrentvs.
TemperatureCopyright2011,TexasInstrumentsIncorporated5CSD17322Q5ASLPS330–JUNE2011www.
ti.
comMECHANICALDATAQ5APackageDimensionsMILLIMETERSDIMMINNOMMAXA0.
901.
001.
10b0.
330.
410.
51c0.
200.
250.
34D14.
804.
905.
00D23.
613.
814.
02E5.
906.
006.
10E15.
705.
755.
80E23.
383.
583.
78e1.
171.
271.
37H0.
410.
560.
71K1.
10L0.
510.
610.
71L10.
060.
130.
20θ0°12°6Copyright2011,TexasInstrumentsIncorporatedCSD17322Q5Awww.
ti.
comSLPS330–JUNE2011MILLIMETERSINCHESDIMFigure14.
RecommendedPCBPatternMINMAXMINMAXF16.
2056.
3050.
2440.
248F24.
464.
560.
1760.
18F34.
464.
560.
1760.
18F40.
650.
70.
0260.
028F50.
620.
670.
0240.
026F60.
630.
680.
0250.
027F70.
70.
80.
0280.
031F80.
650.
70.
0260.
028F90.
620.
670.
0240.
026F104.
950.
1930.
197F114.
464.
560.
1760.
18ForrecommendedcircuitlayoutforPCBdesigns,seeapplicationnoteSLPA005–ReducingRingingThroughPCBLayoutTechniques.
Q5ATapeandReelInformationNotes:1.
10-sprockethole-pitchcumulativetolerance±0.
22.
Cambernottoexceed1mmin100mm,noncumulativeover250mm3.
Material:blackstatic-dissipativepolystyrene4.
Alldimensionsareinmm(unlessotherwisespecified)5.
A0andB0measuredonaplane0.
3mmabovethebottomofthepocketCopyright2011,TexasInstrumentsIncorporated7PACKAGEOPTIONADDENDUMwww.
ti.
com28-Aug-2014Addendum-Page1PACKAGINGINFORMATIONOrderableDeviceStatus(1)PackageTypePackageDrawingPinsPackageQtyEcoPlan(2)Lead/BallFinish(6)MSLPeakTemp(3)OpTemp(°C)DeviceMarking(4/5)SamplesCSD17322Q5AACTIVEVSONPDQJ82500Pb-Free(RoHSExempt)CUSNLevel-1-260C-UNLIM-55to150CSD17322(1)Themarketingstatusvaluesaredefinedasfollows:ACTIVE:Productdevicerecommendedfornewdesigns.
LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect.
NRND:Notrecommendedfornewdesigns.
Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartinanewdesign.
PREVIEW:Devicehasbeenannouncedbutisnotinproduction.
Samplesmayormaynotbeavailable.
OBSOLETE:TIhasdiscontinuedtheproductionofthedevice.
(2)EcoPlan-Theplannedeco-friendlyclassification:Pb-Free(RoHS),Pb-Free(RoHSExempt),orGreen(RoHS&noSb/Br)-pleasecheckhttp://www.
ti.
com/productcontentforthelatestavailabilityinformationandadditionalproductcontentdetails.
TBD:ThePb-Free/Greenconversionplanhasnotbeendefined.
Pb-Free(RoHS):TI'sterms"Lead-Free"or"Pb-Free"meansemiconductorproductsthatarecompatiblewiththecurrentRoHSrequirementsforall6substances,includingtherequirementthatleadnotexceed0.
1%byweightinhomogeneousmaterials.
Wheredesignedtobesolderedathightemperatures,TIPb-Freeproductsaresuitableforuseinspecifiedlead-freeprocesses.
Pb-Free(RoHSExempt):ThiscomponenthasaRoHSexemptionforeither1)lead-basedflip-chipsolderbumpsusedbetweenthedieandpackage,or2)lead-baseddieadhesiveusedbetweenthedieandleadframe.
ThecomponentisotherwiseconsideredPb-Free(RoHScompatible)asdefinedabove.
Green(RoHS&noSb/Br):TIdefines"Green"tomeanPb-Free(RoHScompatible),andfreeofBromine(Br)andAntimony(Sb)basedflameretardants(BrorSbdonotexceed0.
1%byweightinhomogeneousmaterial)(3)MSL,PeakTemp.
-TheMoistureSensitivityLevelratingaccordingtotheJEDECindustrystandardclassifications,andpeaksoldertemperature.
(4)Theremaybeadditionalmarking,whichrelatestothelogo,thelottracecodeinformation,ortheenvironmentalcategoryonthedevice.
(5)MultipleDeviceMarkingswillbeinsideparentheses.
OnlyoneDeviceMarkingcontainedinparenthesesandseparatedbya"~"willappearonadevice.
IfalineisindentedthenitisacontinuationofthepreviouslineandthetwocombinedrepresenttheentireDeviceMarkingforthatdevice.
(6)Lead/BallFinish-OrderableDevicesmayhavemultiplematerialfinishoptions.
Finishoptionsareseparatedbyaverticalruledline.
Lead/BallFinishvaluesmaywraptotwolinesifthefinishvalueexceedsthemaximumcolumnwidth.
ImportantInformationandDisclaimer:TheinformationprovidedonthispagerepresentsTI'sknowledgeandbeliefasofthedatethatitisprovided.
TIbasesitsknowledgeandbeliefoninformationprovidedbythirdparties,andmakesnorepresentationorwarrantyastotheaccuracyofsuchinformation.
Effortsareunderwaytobetterintegrateinformationfromthirdparties.
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InnoeventshallTI'sliabilityarisingoutofsuchinformationexceedthetotalpurchasepriceoftheTIpart(s)atissueinthisdocumentsoldbyTItoCustomeronanannualbasis.
PACKAGEOPTIONADDENDUMwww.
ti.
com28-Aug-2014Addendum-Page2IMPORTANTNOTICETexasInstrumentsIncorporatedanditssubsidiaries(TI)reservetherighttomakecorrections,enhancements,improvementsandotherchangestoitssemiconductorproductsandservicesperJESD46,latestissue,andtodiscontinueanyproductorserviceperJESD48,latestissue.
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