switchwww

VESD12A1C-HD1www.
vishay.
comVishaySemiconductorsRev.
1.
3,18-Jun-131DocumentNumber:81799Fortechnicalquestions,contact:ESDprotection@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000ESD-ProtectionDiodeinLLP1006-2LMARKING(exampleonly)Bar=cathodemarkingX=datecodeY=typecode(seetablebelow)FEATURESUltracompactLLP1006-2LpackageLowpackageheight4ASolderingcanbecheckedbystandardvisioninspection.
NoX-raynecessaryPinplatingNiPdAu(e4)nowhiskergrowthMaterialcategorization:Fordefinitionsofcompliancepleaseseewww.
vishay.
com/doc9991220855208562121121XYORDERINGINFORMATIONDEVICENAMEORDERINGCODETAPEDUNITSPERREEL(8mmTAPEON7"REEL)MINIMUMORDERQUANTITYVESD12A1C-HD1VESD12A1C-HD1-GS0880008000PACKAGEDATADEVICENAMEPACKAGENAMETYPECODEWEIGHTMOLDINGCOMPOUNDFLAMMABILITYRATINGMOISTURESENSITIVITYLEVELSOLDERINGCONDITIONSVESD12A1C-HD1LLP1006-2LG0.
72mgUL94V-0MSLlevel1(accordingJ-STD-020)260°C/10satterminalsABSOLUTEMAXIMUMRATINGSVESD12A1C-HD1PARAMETERTESTCONDITIONSSYMBOLVALUEUNITPeakpulsecurrentacc.
IEC61000-4-5;tp=8/20μs;singleshotIPPM4APeakpulsepoweracc.
IEC61000-4-5;tp=8/20μs;singleshotPPP92WESDimmunityContactdischarge,acc.
IEC61000-4-2;10pulsesVESD±30kVAirdischarge,acc.
IEC61000-4-2;10pulsesVESD±30kVOperatingtemperatureJunctiontemperatureTJ-40to+125°CStoragetemperatureTSTG-55to+150°CVESD12A1C-HD1www.
vishay.
comVishaySemiconductorsRev.
1.
3,18-Jun-132DocumentNumber:81799Fortechnicalquestions,contact:ESDprotection@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000BiAs-MODE(Bidirectionalasymmetricalprotectionmode)WiththeVESD12A1C-HD1onesignal-ordata-lines(L1)canbeprotectedagainstvoltagetransients.
Withpin1connectedtogroundandpin2connectedtoasignal-ordata-linewhichhastobeprotected.
Aslongasthevoltagelevelonthedata-orsignal-lineisbetween0V(groundlevel)andthespecifiedmaximumreverseworkingvoltage(VRWM)theprotectiondiodebetweendatalineandgroundoffersahighisolationtothegroundline.
Theprotectiondevicebehaveslikeanopenswitch.
Assoonasanypositivetransientvoltagesignalexceedsthebreakthroughvoltageleveloftheprotectiondiode,thediodebecomesconductiveandshortsthetransientcurrenttoground.
Nowtheprotectiondevicebehaveslikeaclosedswitch.
Theclampingvoltage(VC)isdefinedbythebreakthroughvoltage(VBR)levelplusthevoltagedropattheseriesimpedance(resistanceandinductance)oftheprotectiondevice.
Anynegativetransientsignalwillbeclampedaccordingly.
Thenegativetransientcurrentisflowingintheforwarddirectionoftheprotectiondiode.
Thelowforwardvoltage(VF)clampsthenegativetransientclosetothegroundlevel.
DuetothedifferentclampinglevelsinforwardandreversedirectiontheVESD12A1C-HD1clampingbehaviourisbidirectionalandasymmetrical(BiAs).
ELECTRICALCHARACTERISTICSVESD12A1C-HD1BiAsmode(betweenpin1andpin2)(Tamb=25°C,unlessotherwisespecified)PARAMETERTESTCONDITIONS/REMARKSSYMBOLMIN.
TYP.
MAX.
UNITProtectionpathsNumberoflineswhichcanbeprotectedNchannel--1linesReversestand-offvoltageMax.
reverseworkingvoltageVRWM--12VReversevoltageatIR=0.
1μAVR12--VReversecurrentatVRWM=12VIR-www.
vishay.
comVishaySemiconductorsRev.
1.
3,18-Jun-133DocumentNumber:81799Fortechnicalquestions,contact:ESDprotection@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000TYPICALCHARACTERISTICS(Tamb=25°C,unlessotherwisespecified)Fig.
1-8/20μsPeakPulseCurrentWaveForm(acc.
IEC61000-4-5)Fig.
2-ESDDischargeCurrentWaveFormacc.
IEC61000-4-2(330/150pF)Fig.
3-TypicalCapacitanceCDvs.
ReverseVoltageVRFig.
4-TypicalForwardCurrentIFvs.
ForwardVoltageVFFig.
5-TypicalReverseVoltageVRvs.
ReverseCurrentIRFig.
6-TypicalClampingVoltagevs.
PeakPulseCurrentIPP0%20%40%60%80%100%010203040Time(s)IPPM20sto50%8sto100%205480%20%40%60%80%100%120%-100102030405060708090100Time(ns)DischargeCurrentIESDRisetime=0.
7nsto1ns53%27%20557051015202530350123456789101112f=1MHz20678VR(V)CD(pF)0.
0010.
010.
11101000.
50.
60.
70.
80.
920679VF(V)IF(mA)02468101214160.
010.
111010010001000020680IR(A)VR(V)05101520250ReverseForward20681IPP(A)VF/VC(V)Measuredacc.
IEC61000-4-5(8/20s-waveform)12345VESD12A1C-HD1www.
vishay.
comVishaySemiconductorsRev.
1.
3,18-Jun-134DocumentNumber:81799Fortechnicalquestions,contact:ESDprotection@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000Fig.
7-TypicalClampingPerformanceat+8kVContactDischarge(acc.
IEC61000-4-2)Fig.
8-TypicalClampingPerformanceat-8kVContactDischarge(acc.
IEC61000-4-2)Fig.
9-TypicalClampingVoltageat±ESDContactDischargeFig.
10-(acc.
IEC61000-4-2)-20-100102030405060-100102030405060708090Acc.
IEC61000-4-2+8kVcontactdischargeReverse20683t(ns)VC-ESD(V)-50-40-30-20-1001020-10010203040506070809020682t(ns)VC-ESD(V)Acc.
IEC61000-4-2-8kVcontactdischargeForward-150-100-5005010015020005101520Acc.
IEC61000-4-2contactdischargeVC-ESDPositivedischarge(pin2topin1)Negativedischarge(pin1topin2)20684VC-ESD(V)VESD(kV)VESD12A1C-HD1www.
vishay.
comVishaySemiconductorsRev.
1.
3,18-Jun-135DocumentNumber:81799Fortechnicalquestions,contact:ESDprotection@vishay.
comTHISDOCUMENTISSUBJECTTOCHANGEWITHOUTNOTICE.
THEPRODUCTSDESCRIBEDHEREINANDTHISDOCUMENTARESUBJECTTOSPECIFICDISCLAIMERS,SETFORTHATwww.
vishay.
com/doc91000PACKAGEDIMENSIONSinmillimeters(inches):LLP1006-2L20812Documentno.
:S8-V-3906.
04-005(4)Rev.
5-Date:21April2010Created-Date:13.
July.
2007Footprintrecommendation:solderresistmasksolderpad0.
55[0.
022]0.
45[0.
018]0.
25[0.
010]0.
15[0.
006]0.
45[0.
018]0.
35[0.
014]0.
3[0.
012]0.
2[0.
008]0.
4[0.
016]0.
33[0.
013]1.
05[0.
041]0.
95[0.
037]soldermaskopening±0.
03measuredmiddleofthepackage0.
05[0.
002]0[0.
000]0.
125[0.
005]Ref.
0.
65[0.
026]0.
55[0.
022]0.
05[0.
002]0.
25[0.
010]0.
5[0.
020]1[0.
039]0.
5[0.
020]0.
6[0.
024]0.
2[0.
008]OrientationIdenticationLegalDisclaimerNoticewww.
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