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IMPORTANTNOTICEDearcustomer,AsfromOctober1st,2006PhilipsSemiconductorshasanewtradename-NXPSemiconductors,whichwillbeusedinfuturedatasheetstogetherwithnewcontactdetails.
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Thankyouforyourcooperationandunderstanding,NXPSemiconductorsBFG10;BFG10/XNPN2GHzRFpowertransistorRev.
05—22November2007ProductdatasheetNXPSemiconductorsProductspecicationNPN2GHzRFpowertransistorBFG10;BFG10/XFEATURESHighpowergainHighefficiencySmallsizediscretepoweramplifier1.
9GHzoperatingareaGoldmetallizationensuresexcellentreliability.
APPLICATIONSCommonemitterclass-ABoperationinhand-heldradioequipmentat1.
9GHz.
DESCRIPTIONNPNsiliconplanarepitaxialtransistorencapsulatedinplastic,4-pindual-emitterSOT143package.
PINNINGPINDESCRIPTIONBFG10(seeFig.
1)1collector2base3emitter4emitterBFG10/X(seeFig.
1)1collector2emitter3base4emitterFig.
1SOT143.
handbook,2columnsTopviewMSB0141234MARKINGTYPENUMBERCODEBFG10%MSBFG10/X%MTQUICKREFERENCEDATARFperformanceatTamb=25°Cinacommon-emittertestcircuit(seeFig.
7).
LIMITINGVALUESInaccordancewiththeAbsoluteMaximumRatingSystem(IEC134).
Note1.
Tsisthetemperatureatthesolderingpointofthecollectorpin.
MODEOFOPERATIONf(GHz)VCE(V)PL(mW)Gp(dB)ηc(%)Pulsed,class-AB,dutycycle:5>50typ.
7typ.
60Pulsed,class-ABoperation.
VCE=3.
6V;VBE=0.
65V;f=1.
9GHz;dutycycle<1:8.
CircuitoptimizedforPL=200mW.
Fig.
4Powergainandefficiencyasfunctionsofloadpower;typicalvalues.
handbook,halfpage05001002MLC820468100020406080100200300400GpGp(dB)P(mW)Lc(%)ηcηFig.
5Loadpowerasafunctionofdrivepower;typicalvalues.
Pulsed,class-ABoperation.
VCE=3.
6V;VBE=0.
65V;f=1.
9GHz;dutycycle<1:8.
CircuitoptimizedforPL=200mW.
handbook,halfpage0501001505000400MLC821300200100PL(mW)P(mW)DNXPSemiconductorsProductspecicationNPN2GHzRFpowertransistorBFG10;BFG10/XSPICEparametersfortheBFG10crystalNote1.
Theseparametershavenotbeenextracted,thedefaultvaluesareshown.
SEQUENCENo.
PARAMETERVALUEUNIT1IS2.
714fA2BF102.
83NF0.
9984VAF28.
12V5IKF6.
009A6ISE403.
2pA7NE2.
9378BR31.
019NR0.
99910VAR2.
889V11IKR0.
284A12ISC1.
487fA13NC1.
10014RB3.
50015IRB1.
000A16RBM3.
50017RE0.
21718RC0.
19619(1)XTB0.
00020(1)EG1.
110eV21(1)XTI3.
00022CJE5.
125pF23VJE0.
600V24MJE0.
36725TF12.
07ps26XTF99.
4027VTF7.
220V28ITF3.
950A29PTF0.
000deg30CJC2.
327pF31VJC0.
668V32MJC0.
39833XCJC0.
16034(1)TR0.
000ns35(1)CJS0.
000F36(1)VJS750.
0mV37(1)MJS0.
00038FC0.
652Listofcomponents(seeFig.
6)DESIGNATIONVALUEUNITCbe84fFCcb17fFCce191fFL10.
12nHL20.
21nHL30.
06nHLB0.
95nHLE0.
40nHQLB=50;QLE=50;QLB,E(f)=QLB,E√(f/fc);fc=scalingfrequency=100MHz.
Fig.
6PackageequivalentcircuitSOT143.
handbook,halfpageMBC964BECB'C'E'LBLEL3L1L2CcbCbeceCNXPSemiconductorsProductspecicationNPN2GHzRFpowertransistorBFG10;BFG10/XTestcircuitinformationhandbook,fullpagewidthMLC822,,,,,L9C11C1L8L2L3L5L4L1C10C14,C15,C16C12C13C2,C3,C4,C5C6,C7,C8R1T1R2L10Vbias50input50outputC9DUT,,,,,,L6,,,,,,L7VSFig.
7Common-emittertestcircuitforclass-ABoperationat1.
9GHz.
NXPSemiconductorsProductspecicationNPN2GHzRFpowertransistorBFG10;BFG10/XListofcomponentsusedintestcircuit(seeFig.
7)Notes1.
AmericanTechnicalCeramics(ATC)capacitor,type100Aorothercapacitorofthesamequality.
2.
Thestriplinesareona132inchdoublecopper-cladprinted-circuitboardwithPTFEfibre-glassdielectric(εr=6).
COMPONENTDESCRIPTIONVALUEDIMENSIONSCATALOGUENo.
C1,C9,C10,C11multilayerceramicchipcapacitor;note124pFC2,C3,C4,C5,C6,C7multilayerceramicchipcapacitor;note10.
86pFC8multilayerceramicchipcapacitor;note11.
1pFC12,C13electrolyticcapacitor470F;10V222203134471C14,C15,C16multilayerceramicchipcapacitor;note110nFL1stripline;note2length28.
5mmwidth0.
93mmL2stripline;note2length2.
3mmwidth0.
93mmL3stripline;note2length3.
1mmwidth0.
93mmL4stripline;note2length3.
3mmwidth0.
93mmL5stripline;note2length16.
3mmwidth0.
93mmL6stripline;note2length10mmwidth0.
93mmL7stripline;note2length4.
4mmwidth0.
4mmL8stripline;note2length19.
3mmwidth0.
93mmL9stripline;note2length19.
7mmwidth0.
4mmL10microchokeT1BD228R1metallmresistor20;0.
4W232215710209R2metallmresistor530;0.
4W232215715301NXPSemiconductorsProductspecicationNPN2GHzRFpowertransistorBFG10;BFG10/XFig.
8Printed-circuitboardandcomponentlay-outforcommon-emittertestcircuitinFig.
7.
Dimensionsinmm.
Thecomponentsaresituatedononesideofthecopper-cladPTFEmicrofibre-glassboard,theothersideisnotetchedandservesasagroundplane.
Earthconnectionsfromthecomponentsidetothegroundplanearemadebythroughmetallization.
handbook,fullpagewidthMLC823CollectorBaseCollectorBase7060C1C2C3C5C6C7C8R2L1L2L3C9C10C11C12R1T1C13VC14C15C16C4L4L5L6L7L8L10L9biasVSNXPSemiconductorsProductspecicationNPN2GHzRFpowertransistorBFG10;BFG10/XPACKAGEOUTLINEFig.
9SOT143.
Dimensionsinmm.
handbook,fullpagewidthMBC84510maxo10maxo30maxo1.
1max0.
750.
600.
1500.
0900.
1max432M0.
1AB00.
10.
48TOPVIEW1.
41.
22.
5max3.
02.
8M0.
2ABAB1.
9100.
10.
881.
7NXPSemiconductorsBFG10;BFG10/XNPN2GHzRFpowertransistorLegalinformationDatasheetstatus[1]Pleaseconsultthemostrecentlyissueddocumentbeforeinitiatingorcompletingadesign.
[2]Theterm'shortdatasheet'isexplainedinsection"Denitions".
[3]Theproductstatusofdevice(s)describedinthisdocumentmayhavechangedsincethisdocumentwaspublishedandmaydifferincaseofmultipledevices.
ThelatestproductstatusinformationisavailableontheInternetatURLhttp://www.
nxp.
com.
DenitionsDraft—Thedocumentisadraftversiononly.
Thecontentisstillunderinternalreviewandsubjecttoformalapproval,whichmayresultinmodicationsoradditions.
NXPSemiconductorsdoesnotgiveanyrepresentationsorwarrantiesastotheaccuracyorcompletenessofinformationincludedhereinandshallhavenoliabilityfortheconsequencesofuseofsuchinformation.
Shortdatasheet—Ashortdatasheetisanextractfromafulldatasheetwiththesameproducttypenumber(s)andtitle.
Ashortdatasheetisintendedforquickreferenceonlyandshouldnotbereliedupontocontaindetailedandfullinformation.
Fordetailedandfullinformationseetherelevantfulldatasheet,whichisavailableonrequestviathelocalNXPSemiconductorssalesofce.
Incaseofanyinconsistencyorconictwiththeshortdatasheet,thefulldatasheetshallprevail.
DisclaimersGeneral—Informationinthisdocumentisbelievedtobeaccurateandreliable.
However,NXPSemiconductorsdoesnotgiveanyrepresentationsorwarranties,expressedorimplied,astotheaccuracyorcompletenessofsuchinformationandshallhavenoliabilityfortheconsequencesofuseofsuchinformation.
Righttomakechanges—NXPSemiconductorsreservestherighttomakechangestoinformationpublishedinthisdocument,includingwithoutlimitationspecicationsandproductdescriptions,atanytimeandwithoutnotice.
Thisdocumentsupersedesandreplacesallinformationsuppliedpriortothepublicationhereof.
Suitabilityforuse—NXPSemiconductorsproductsarenotdesigned,authorizedorwarrantedtobesuitableforuseinmedical,military,aircraft,spaceorlifesupportequipment,norinapplicationswherefailureormalfunctionofanNXPSemiconductorsproductcanreasonablybeexpectedtoresultinpersonalinjury,deathorseverepropertyorenvironmentaldamage.
NXPSemiconductorsacceptsnoliabilityforinclusionand/oruseofNXPSemiconductorsproductsinsuchequipmentorapplicationsandthereforesuchinclusionand/oruseisatthecustomer'sownrisk.
Applications—Applicationsthataredescribedhereinforanyoftheseproductsareforillustrativepurposesonly.
NXPSemiconductorsmakesnorepresentationorwarrantythatsuchapplicationswillbesuitableforthespeciedusewithoutfurthertestingormodication.
Limitingvalues—Stressaboveoneormorelimitingvalues(asdenedintheAbsoluteMaximumRatingsSystemofIEC60134)maycausepermanentdamagetothedevice.
LimitingvaluesarestressratingsonlyandoperationofthedeviceattheseoranyotherconditionsabovethosegivenintheCharacteristicssectionsofthisdocumentisnotimplied.
Exposuretolimitingvaluesforextendedperiodsmayaffectdevicereliability.
Termsandconditionsofsale—NXPSemiconductorsproductsaresoldsubjecttothegeneraltermsandconditionsofcommercialsale,aspublishedathttp://www.
nxp.
com/prole/terms,includingthosepertainingtowarranty,intellectualpropertyrightsinfringementandlimitationofliability,unlessexplicitlyotherwiseagreedtoinwritingbyNXPSemiconductors.
Incaseofanyinconsistencyorconictbetweeninformationinthisdocumentandsuchtermsandconditions,thelatterwillprevail.
Nooffertosellorlicense—Nothinginthisdocumentmaybeinterpretedorconstruedasanoffertosellproductsthatisopenforacceptanceorthegrant,conveyanceorimplicationofanylicenseunderanycopyrights,patentsorotherindustrialorintellectualpropertyrights.
TrademarksNotice:Allreferencedbrands,productnames,servicenamesandtrademarksarethepropertyoftheirrespectiveowners.
ContactinformationForadditionalinformation,pleasevisit:http://www.
nxp.
comForsalesofceaddresses,sendanemailto:salesaddresses@nxp.
comDocumentstatus[1][2]Productstatus[3]DenitionObjective[short]datasheetDevelopmentThisdocumentcontainsdatafromtheobjectivespecicationforproductdevelopment.
Preliminary[short]datasheetQualicationThisdocumentcontainsdatafromthepreliminaryspecication.
Product[short]datasheetProductionThisdocumentcontainstheproductspecication.
NXPSemiconductorsBFG10;BFG10/XNPN2GHzRFpowertransistorNXPB.
V.
2007.
Allrightsreserved.
Formoreinformation,pleasevisit:http://www.
nxp.
comForsalesofficeaddresses,pleasesendanemailto:salesaddresses@nxp.
comDateofrelease:22November2007Documentidentifier:BFG10X_N_5Pleasebeawarethatimportantnoticesconcerningthisdocumentandtheproduct(s)describedherein,havebeenincludedinsection'Legalinformation'.
RevisionhistoryRevisionhistoryDocumentIDReleasedateDatasheetstatusChangenoticeSupersedesBFG10X_N_520071122Productdatasheet-BFG10X_4Modications:Markingtableonpage2;changedcodeBFG10X_419950831Productspecication-BFG10X_3BFG10X_319950307--BFG10X_2BFG10X_2---BFG10X_1BFG10X_1----