RqJCwww.48pian.com

CSD16321Q5Cwww.
ti.
comSLPS242B–DECEMBER2009–REVISEDMAY2010DualCoolN-ChannelNexFETPowerMOSFETsCheckforSamples:CSD16321Q5C1FEATURESPRODUCTSUMMARY2DualCoolPackageSON5*6mmVDSDraintoSourceVoltage25VOptimizedforTwoSidedCoolingQgGateChargeTotal(4.
5V)14nCOptimizedfor5VGateDriveQgdGateChargeGatetoDrain2.
5nCUltralowQgandQgdVGS=3V2.
8mRDS(on)DraintoSourceOnResistanceVGS=4.
5V2.
1mLowThermalResistanceVGS=8V1.
9mAvalancheRatedVGS(th)ThresholdVoltage1.
1VPbFreeTerminalPlatingRoHSCompliantandHalogenFreeORDERINGINFORMATIONDevicePackageMediaQtyShipAPPLICATIONSSON5*6-mmPlastic13-InchTapeandCSD16321Q5C2500Point-of-LoadSynchronousBuckinPackageReelReelNetworking,TelecomandComputingSystemsOptimizedforSynchronousFETApplicationsABSOLUTEMAXIMUMRATINGSTA=25°CunlessotherwisestatedVALUEUNITDESCRIPTIONVDSDraintoSourceVoltage25VVGSGatetoSourceVoltage+10/–8VTheNexFETpowerMOSFEThasbeendesignedContinuousDrainCurrent,TC=25°C100AtominimizelossesinpowerconversionapplicationsIDandoptimizedfor5Vgatedriveapplications.
ContinuousDrainCurrent(1)31AIDMPulsedDrainCurrent,TA=25°C(2)200APDPowerDissipation(1)3.
1WTJ,OperatingJunctionandStorage–55to150°CTSTGTemperatureRangeAvalancheEnergy,singlepulseEAS218mJID=66A,L=0.
1mH,RG=25(1)TypicalRqJA=39°C/Won1-in2Cu(2-oz.
)ona0.
060"thickFR4PCB(2)Pulseduration≤300ms,dutycycle≤2%RDS(on)vsVGSGateCharge1Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet.
2DualCool,NexFETaretrademarksofTexasInstruments.
PRODUCTIONDATAinformationiscurrentasofpublicationdate.
Copyright2009–2010,TexasInstrumentsIncorporatedProductsconformtospecificationsperthetermsoftheTexasInstrumentsstandardwarranty.
Productionprocessingdoesnotnecessarilyincludetestingofallparameters.
CSD16321Q5CSLPS242B–DECEMBER2009–REVISEDMAY2010www.
ti.
comThesedeviceshavelimitedbuilt-inESDprotection.
TheleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoamduringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates.
ELECTRICALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERTESTCONDITIONSMINTYPMAXUNITStaticCharacteristicsBVDSSDraintoSourceVoltageVGS=0V,ID=250mA25VIDSSDraintoSourceLeakageVGS=0V,VDS=20V1mAIGSSGatetoSourceLeakageVDS=0V,VGS=+10/–8V100nAVGS(th)GatetoSourceThresholdVoltageVDS=VGS,ID=250mA0.
91.
11.
4VVGS=3V,ID=25A2.
83.
8mRDS(on)DraintoSourceOnResistanceVGS=4.
5V,ID=25A2.
12.
6mVGS=8.
0V,ID=25A1.
92.
4mgfsTransconductanceVDS=12.
5V,ID=25A150SDynamicCharacteristicsCissInputCapacitance23603100pFVGS=0V,VDS=12.
5V,CossOutputCapacitance17002200pFf=1MHzCrssReverseTransferCapacitance115150pFRGSeriesGateResistance1.
53QgGateChargeTotal(4.
5V)1419nCQgdGateCharge–GatetoDrain2.
5nCVDS=12.
5V,IDS=25AQgsGateCharge–GatetoSource4nCQg(th)GateChargeatVth2.
1nCQossOutputChargeVDS=13.
3V,VGS=0V36nCtd(on)TurnOnDelayTime9nstrRiseTime15nsVDS=12.
5V,VGS=4.
5V,IDS=25A,RG=2td(off)TurnOffDelayTime27nstfFallTime17nsDiodeCharacteristicsVSDDiodeForwardVoltageIDS=25A,VGS=0V0.
81VQrrReverseRecoveryCharge33nCVDD=13.
3V,IF=25A,di/dt=300A/mstrrReverseRecoveryTime32nsTHERMALCHARACTERISTICS(TA=25°Cunlessotherwisestated)PARAMETERMINTYPMAXUNITRqJCThermalResistanceJunctiontoCase(TopSource)(1)1.
2°C/WRqJCThermalResistanceJunctiontoCase(Bottomdrain)(1)1.
1°C/WRqJAThermalResistanceJunctiontoAmbient(1)(2)48°C/W(1)RqJCisdeterminedwiththedevicemountedona1-inch22-oz.
Cupadona1.
5*1.
5-inch0.
060-inchthickFR4board.
RqJCisspecifiedbydesign,whereasRqCAisdeterminedbytheuser'sboarddesign.
(2)DevicemountedonFR4materialwith1-inch2of2-oz.
Cu.
2SubmitDocumentationFeedbackCopyright2009–2010,TexasInstrumentsIncorporatedProductFolderLink(s):CSD16321Q5CCSD16321Q5Cwww.
ti.
comSLPS242B–DECEMBER2009–REVISEDMAY2010MaxRqJA=115°C/WMaxRqJA=48°C/Wwhenmountedonwhenmountedon1in2minimumpadareaofof2-oz.
Cu.
2-oz.
Cu.
TextandbrAddedforSpacingTextandbrAddedforSpacingTextandbrAddedforSpacingTextandbrAddedforSpacingTYPICALMOSFETCHARACTERISTICS(TA=25°Cunlessotherwisestated)Figure1.
TransientThermalImpedanceCopyright2009–2010,TexasInstrumentsIncorporatedSubmitDocumentationFeedback3ProductFolderLink(s):CSD16321Q5CCSD16321Q5CSLPS242B–DECEMBER2009–REVISEDMAY2010www.
ti.
comTYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure2.
SaturationCharacteristicsFigure3.
TransferCharacteristicsTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure4.
GateChargeFigure5.
CapacitanceTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure6.
ThresholdVoltagevs.
TemperatureFigure7.
OnResistancevs.
GateVoltage4SubmitDocumentationFeedbackCopyright2009–2010,TexasInstrumentsIncorporatedProductFolderLink(s):CSD16321Q5CCSD16321Q5Cwww.
ti.
comSLPS242B–DECEMBER2009–REVISEDMAY2010TYPICALMOSFETCHARACTERISTICS(continued)(TA=25°Cunlessotherwisestated)TEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure8.
OnResistancevs.
TemperatureFigure9.
TypicalDiodeForwardVoltageTEXTADDEDFORSPACINGTEXTADDEDFORSPACINGFigure10.
MaximumSafeOperatingAreaFigure11.
SinglePulseUnclampedInductiveSwitchingTEXTADDEDFORSPACINGFigure12.
MaximumDrainCurrentvs.
TemperatureCopyright2009–2010,TexasInstrumentsIncorporatedSubmitDocumentationFeedback5ProductFolderLink(s):CSD16321Q5CCSD16321Q5CSLPS242B–DECEMBER2009–REVISEDMAY2010www.
ti.
comMECHANICALDATAQ5CPackageDimensionsMILLIMETERSINCHESDIMMINMAXMINMAXA0.
9501.
0500.
0370.
039b0.
3600.
4600.
0140.
018c0.
1500.
2500.
0060.
010c10.
1500.
2500.
0060.
010D14.
9005.
1000.
1930.
201D24.
3204.
5200.
1700.
178E4.
9005.
1000.
1930.
201E15.
9006.
1000.
2320.
240E23.
9204.
120.
1540.
162e1.
27TYP0.
050L0.
5100.
7100.
0200.
028q––––K0.
760–0.
030–M3.
2603.
4600.
1280.
136M10.
5200.
7200.
0200.
028N2.
7202.
9200.
1070.
115N11.
2271.
4270.
0480.
0566SubmitDocumentationFeedbackCopyright2009–2010,TexasInstrumentsIncorporatedProductFolderLink(s):CSD16321Q5CCSD16321Q5Cwww.
ti.
comSLPS242B–DECEMBER2009–REVISEDMAY2010MILLIMETERSINCHESRecommendedPCBPatternDIMMINMAXMINMAXF16.
2056.
3050.
2440.
248F24.
464.
560.
1760.
18F34.
464.
560.
1760.
18F40.
650.
70.
0260.
028F50.
620.
670.
0240.
026F60.
630.
680.
0250.
027F70.
70.
80.
0280.
031F80.
650.
70.
0260.
028F90.
620.
670.
0240.
026F104.
950.
1930.
197F114.
464.
560.
1760.
18ForrecommendedcircuitlayoutforPCBdesigns,seeapplicationnoteSLPA005–ReducingRingingThroughPCBLayoutTechniques.
Q5CTapeandReelInformationNotes:1.
10-sprockethole-pitchcumulativetolerance±0.
22.
Cambernottoexceed1mmin100mm,noncumulativeover250mm3.
Material:blackstatic-dissipativepolystyrene4.
Alldimensionsareinmm,unlessotherwisespecified.
5.
A0andB0measuredonaplane0.
3mmabovethebottomofthepocket6.
MSL1260°C(IRandconvection)PbFreflowcompatibleCopyright2009–2010,TexasInstrumentsIncorporatedSubmitDocumentationFeedback7ProductFolderLink(s):CSD16321Q5CCSD16321Q5CSLPS242B–DECEMBER2009–REVISEDMAY2010www.
ti.
comREVISIONHISTORYChangesfromOriginal(December2009)toRevisionAPageChangedtheMechanicalDatadimensionstable.
AddeddimensionsforM,M1,NandN16ChangesfromRevisionA(January2010)toRevisionBPageChangedRDS(on)-VGS=3V,ID=25AMAXvalueFrom:3.
5To:3.
82DeletedthePackageMarkingInformationsection78SubmitDocumentationFeedbackCopyright2009–2010,TexasInstrumentsIncorporatedProductFolderLink(s):CSD16321Q5CTAPEANDREELINFORMATION*AlldimensionsarenominalDevicePackageTypePackageDrawingPinsSPQReelDiameter(mm)ReelWidthW1(mm)A0(mm)B0(mm)K0(mm)P1(mm)W(mm)Pin1QuadrantCSD16321Q5CVSON-CLIPDQU82500330.
012.
86.
55.
31.
48.
012.
0Q1PACKAGEMATERIALSINFORMATIONwww.
ti.
com15-Apr-2014PackMaterials-Page1*AlldimensionsarenominalDevicePackageTypePackageDrawingPinsSPQLength(mm)Width(mm)Height(mm)CSD16321Q5CVSON-CLIPDQU82500335.
0335.
032.
0PACKAGEMATERIALSINFORMATIONwww.
ti.
com15-Apr-2014PackMaterials-Page2IMPORTANTNOTICETexasInstrumentsIncorporatedanditssubsidiaries(TI)reservetherighttomakecorrections,enhancements,improvementsandotherchangestoitssemiconductorproductsandservicesperJESD46,latestissue,andtodiscontinueanyproductorserviceperJESD48,latestissue.
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TestingandotherqualitycontroltechniquesareusedtotheextentTIdeemsnecessarytosupportthiswarranty.
Exceptwheremandatedbyapplicablelaw,testingofallparametersofeachcomponentisnotnecessarilyperformed.
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